IHW30N90R_08 [INFINEON]
Reverse Conducting IGBT with monolithic body diode; 逆导IGBT与单片体二极管型号: | IHW30N90R_08 |
厂家: | Infineon |
描述: | Reverse Conducting IGBT with monolithic body diode |
文件: | 总12页 (文件大小:299K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IHW30N90R
q
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features:
C
•
•
1.5V typical saturation voltage of IGBT
Trench and Fieldstop technology for 900 V applications offers :
- very tight parameter distribution
G
E
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
•
•
•
•
Low EMI
Qualified according to JEDEC1 for target applications
Application specific optimisation of inverse diode
Pb-free lead plating; RoHS compliant
PG-TO-247-3
Applications:
•
•
Microwave Oven
Soft Switching Applications for ZCS
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IHW30N90R
900V
30A
1.5V
H30R90
PG-TO-247-3
175°C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
VCE
IC
900
V
A
60
30
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE ≤ 900V, Tj ≤ 175°C
Diode forward current
ICpuls
90
90
-
IF
60
30
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
IFpuls
VGE
90
±20
V
Transient Gate-emitter voltage (tp < 5 ms)
±25
Ptot
Tj
454
W
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
-40...+175
-55...+175
260
°C
°C
Tstg
-
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1 J-STD-020 and JESD-022
1
Rev. 2.2 Nov 08
Power Semiconductors
IHW30N90R
q
Soft Switching Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC
RthJCD
RthJA
0.33
0.33
40
K/W
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=0.5mA
900
-
-
V
Collector-emitter saturation voltage
VCE(sat) VGE = 15V, IC=30A
Tj=25°C
-
-
-
1.5
1.6
1.7
1.7
-
-
Tj=150°C
Tj=175°C
Diode forward voltage
VF
VGE=0V, IF=30A
Tj=25°C
-
-
-
1.4
1.4
1.6
-
-
Tj=150°C
1.45
Tj=175°C
Gate-emitter threshold voltage
VGE(th)
ICES
5.1
5.8
6.4
IC=700μA,VCE=VGE
Zero gate voltage collector current
VCE=900V,
μA
VGE=0V
Tj=25°C
Tj=150°C
-
-
-
-
-
-
5
2500
600
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
nA
2
Rev. 2.2 Nov 08
Power Semiconductors
IHW30N90R
q
Soft Switching Series
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
-
-
-
-
2889
83
-
-
-
-
pF
V
GE=0V,
Output capacitance
Reverse transfer capacitance
Gate charge
Coss
Crss
f=1MHz
79
QGate
VCC=720V, IC=30A
200
nC
nH
V
GE=15V
Internal emitter inductance
LE
-
13
-
measured 5mm (0.197 in.) from case
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
Max.
IGBT Characteristic
Turn-off delay time
Fall time
td(off)
tf
-
-
-
-
-
511
24
-
-
-
-
-
Tj=25°C
CC=600V,
IC=30A,
GE=0/15V,
RG= 15Ω
V
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
-
mJ
V
1.46
1.46
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-off delay time
Fall time
td(off)
tf
-
-
-
-
-
594
46
-
-
-
-
-
-
Tj=175°C
CC=600V,
IC=30A,
GE=0/15V,
V
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
mJ
V
2.1
2.1
RG= 15Ω
3
Rev. 2.2 Nov 08
Power Semiconductors
IHW30N90R
q
Soft Switching Series
tp=1µs
10µs
20µs
50µs
80A
60A
40A
20A
0A
TC=80°C
10A
TC=110°C
200µs
1ms
Ic
1A
DC
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency for triangular
current (Eon = 0, hard turn-off)
Figure 2. IGBT Safe operating area
(D = 0, TC = 25°C,
Tj ≤175°C;VGE=15V)
(Tj ≤ 175°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 15Ω)
400W
350W
300W
250W
200W
150W
100W
50W
50A
40A
30A
20A
10A
0A
0W
25°C
75°C
125°C
25°C
50°C
75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
Figure 4. Collector current as a function of
case temperature
(Tj ≤ 175°C)
(VGE ≥ 15V, Tj ≤ 175°C)
4
Rev. 2.2 Nov 08
Power Semiconductors
IHW30N90R
q
Soft Switching Series
80A
70A
60A
50A
40A
30A
20A
10A
0A
80A
70A
60A
50A
40A
30A
20A
10A
0A
VGE=20V
VGE=20V
15V
15V
13V
11V
9V
13V
11V
9V
7V
7V
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
Figure 6. Typical output characteristic
(Tj = 25°C)
(Tj = 175°C)
IC=60A
60A
50A
40A
30A
2.0V
1.5V
1.0V
0.5V
0.0V
IC=30A
IC=15A
TJ=175°C
20A
25°C
10A
0A
0V
2V
4V
6V
8V
50°C
100°C
150°C
VGE, GATE-EMITTER VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
Figure 8. Typical collector-emitter
(VCE=20V)
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.2 Nov 08
Power Semiconductors
IHW30N90R
q
Soft Switching Series
1000ns
1000ns
td(off)
td(off)
100ns
tf
100ns
tf
10ns
0A
10A
20A
30A
40A
50A
20Ω
30Ω
40Ω
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
VCE=600V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
1000ns
7V
6V
5V
4V
3V
2V
td(off)
max.
typ.
100ns
tf
min.
25°C
50°C
75°C
100°C 125°C 150°C
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.7mA)
VGE=0/15V, IC=30A, RG=15Ω,
Dynamic test circuit in Figure E)
6
Rev. 2.2 Nov 08
Power Semiconductors
IHW30N90R
q
Soft Switching Series
4.0mJ
3.0mJ
2.0mJ
1.0mJ
0.0mJ
3.0mJ
2.0mJ
1.0mJ
0.0mJ
Eoff
Eoff
20Ω
30Ω
40Ω
0A
10A
20A
30A
40A
50A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=175°C,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
VCE=600V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
Eoff
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
25°C
50°C
75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=30A, RG=15Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.2 Nov 08
Power Semiconductors
IHW30N90R
q
Soft Switching Series
Ciss
1nF
100pF
10pF
180V
10V
5V
720V
Coss
Crss
0V
0nC
50nC
100nC 150nC 200nC 250nC
0V
10V
20V
QGE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical gate charge
Figure 17. Typical capacitance as a function
of collector-emitter voltage
(IC=30 A)
(VGE=0V, f = 1 MHz)
D=0.5
D=0.5
10-1K/W
0.2
10-1K/W
0.2
R , ( K / W )
τ , ( s )
1.10*10-1
1.43*10-2
8.67*10-4
1.09*10-4
R2
0.1
0.1
R , ( K / W )
0.0842
0.1202
0.0877
0.0385
τ , ( s )
6.67*10-2
9.59*10-3
7.33*10-4
8.56*10-5
R2
0.0395
0.1559
0.1075
0.0275
0.05
0.02
0.05
0.02
0.01
R1
R1
0.01
single pulse
10-2K/W
10-2K/W
C1=τ1/R1 C2=τ2/R2
single pulse
C1=τ1/R1 C2=τ2/R2
10µs
100µs
1ms
10ms
100ms
10µs
100µs
1ms
10ms
100ms
tP, PULSE WIDTH
tP, PULSE WIDTH
Figure 18. IGBT transient thermal
resistance
(D = tp / T)
Figure 19. Typical Diode transient thermal
impedance as a function of pulse width
(D=tP/T)
8
Rev. 2.2 Nov 08
Power Semiconductors
IHW30N90R
q
Soft Switching Series
IF=60A
50A
40A
30A
20A
10A
0A
2.0V
1.5V
1.0V
0.5V
0.0V
30A
15A
TJ=25°C
175°C
0.0V
0.5V
1.0V
1.5V
2.0V
50°C
100°C
150°C
VF, FORWARD VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 20. Typical diode forward current as
a function of forward voltage
Figure 21. Typical diode forward voltage
as a function of junction temperature
9
Rev. 2.2 Nov 08
Power Semiconductors
IHW30N90R
q
Soft Switching Series
PG-TO247-3
M
M
MIN
4.90
2.27
1.85
1.07
1.90
1.90
2.87
2.87
0.55
20.82
16.25
1.05
15.70
13.10
3.68
1.68
MAX
5.16
2.53
2.11
MIN
MAX
0.203
0.099
0.083
0.052
0.095
0.085
0.133
0.123
0.027
0.831
0.695
0.053
0.631
0.557
0.201
0.102
0.193
0.089
0.073
0.042
0.075
0.075
0.113
0.113
0.022
0.820
0.640
0.041
0.618
0.516
0.145
0.066
Z8B00003327
0
1.33
2.41
2.16
3.38
3.13
0.68
21.10
17.65
1.35
16.03
14.15
5.10
2.60
5
0
5
7.5mm
5.44
3
0.214
3
19.80
4.17
3.50
5.49
6.04
20.31
4.47
3.70
6.00
6.30
0.780
0.164
0.138
0.216
0.238
0.799
0.176
0.146
0.236
0.248
17-12-2007
03
10
Rev. 2.2 Nov 08
Power Semiconductors
IHW30N90R
q
Soft Switching Series
i,v
t
=t +t
S F
di /dt
r r
F
Q
=Q +Q
r r
S
F
t
r r
I
t
t
F
S
F
t
Q
10% I
r r m
Q
S
F
I
r r m
di /dt
V
r r
r r m
R
90% I
Figure C. Definition of diodes
switching characteristics
τ1
τ2
τn
r1
r 2
r n
T (t)
j
p(t)
r 2
r1
rn
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
11
Rev. 2.2 Nov 08
Power Semiconductors
IHW30N90R
q
Soft Switching Series
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
12
Rev. 2.2 Nov 08
Power Semiconductors
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