IHW40N65R6 [INFINEON]
IGBT RC Soft Switching;
| 型号： | IHW40N65R6 |
| 厂家： | 
Infineon |
| 描述： | IGBT RC Soft Switching 双极性晶体管 |
| 文件： | 总16页 (文件大小：1795K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IHW40N65R6
Reverse-Conducting IGBT
Reverse-Conducting IGBT with monolithic body diode
Features
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
• Easy parallel switching capability due to positive temperature coefficient in VCEsat
• High ruggedness and stable temperature behavior
• Low EMI
• Pb-free lead plating; RoHS compliant
• Powerful monolithic reverse-conducting diode with low forward voltage
• Very low VCEsat and low Eoff
• Very tight parameter distribution
Potential applications
• Induction Cooking
G
C
E
• Microwave Ovens
Product validation
• Product Validation: Qualified for industrial applications according to the relevant tests of
JEDEC47/20/22
Description
C
G
Type
Package
Marking
IHW40N65R6
PG-TO247-3
H40ER6
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 1.20
2021-03-22
IHW40N65R6
Reverse-Conducting IGBT
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
1
2
3
4
5
6
Datasheet
2
Revision 1.20
2021-03-22
IHW40N65R6
Reverse-Conducting IGBT
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
13.0
Unit
Internal emitter inductance
measured 5mm. (0.197in)
from case
LE
nH
Storage temperature
Soldering temperature
Tstg
-55
150
260
°C
°C
wave soldering 1.6mm (0.063in.) from case
for 10s
Mounting torque , M3 screw
Maximum of mounting
process: 3
M
0.6
40
Nm
Thermal resistance,
junction-ambient
Rth(j-a)
K/W
2
IGBT
Table 2
Maximum rated values
Symbol Note or test condition
VCE Tvj ≥ 25 °C
Parameter
Values
650
83
Unit
Collector-emitter voltage
V
A
DC collector current, limited
by Tvjmax
IC
TC = 25 °C
TC = 100 °C
54
Pulsed collector current, tp
limited by Tvjmax
ICpuls
120
A
Turn-off safe operating area
VCE ≤ 650 V, tP ≤ 1 µs, Tvj ≤ 175 °C
tp = 10 µs, D < 0.010
120
20
A
V
V
Gate-emitter voltage
VGE
VGE
Transient gate-emitter
voltage
30
Power dissipation
Ptot
TC = 25 °C
210
105
W
TC = 100 °C
Table 3
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Collector-emitter breakdown VBRCES IC = 0.2 mA, VGE = 0 V
650
V
V
voltage
Collector-emitter saturation
voltage
VCE sat IC = 40.0 A, VGE = 15 V
Tvj = 25 °C
1.29
1.50
1.60
Tvj = 175 °C
Datasheet
3
Revision 1.20
2021-03-22
IHW40N65R6
Reverse-Conducting IGBT
2 IGBT
Table 3
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Gate-emitter threshold
voltage
VGEth
ICES
IC = 0.40 mA, VCE = VGE
VCE = 650 V, VGE = 0 V
3.20
4.00
4.80
V
Zero gate voltage collector
current
Tvj = 25 °C
40
µA
Tvj = 175 °C
1000
Gate-emitter leakage current
Transconductance
IGES
gfs
VCE = 0 V, VGE = 20 V
IC = 40.0 A, VCE = 20 V
100
nA
S
97.0
4029
42
Input capacitance
Cies
Coes
Cres
QG
VCE = 25 V, VGE = 0 V, f = 100 kHz
VCE = 25 V, VGE = 0 V, f = 100 kHz
VCE = 25 V, VGE = 0 V, f = 100 kHz
IC = 40.0 A, VGE = 15 V, VCE = 520 V
pF
pF
pF
nC
ns
Output capacitance
Reverse transfer capacitance
Gate charge
16
159
17
Turn-on delay time
tdon
VCE = 400 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω,
Lσ = 70 nH, Cσ = 30 pF
Tvj = 25 °C,
IC = 40.0 A
Tvj = 175 °C,
IC = 40.0 A
17
19
Rise time (inductive load)
Turn-off delay time
Fall time (inductive load)
Turn-on energy
tr
tdoff
tf
VCE = 400 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω,
Lσ = 70 nH, Cσ = 30 pF
Tvj = 25 °C,
IC = 40.0 A
ns
ns
Tvj = 175 °C,
IC = 40.0 A
19
VCE = 400 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω,
Lσ = 70 nH, Cσ = 30 pF
Tvj = 25 °C,
IC = 40.0 A
211
236
15
Tvj = 175 °C,
IC = 40.0 A
VCE = 400 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω,
Lσ = 70 nH, Cσ = 30 pF
Tvj = 25 °C,
IC = 40.0 A
ns
Tvj = 175 °C,
IC = 40.0 A
20
Eon
VCE = 400 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω,
Lσ = 70 nH, Cσ = 30 pF
Tvj = 25 °C,
IC = 40.0 A
1.10
1.27
0.42
0.61
mJ
mJ
Tvj = 175 °C,
IC = 40.0 A
Turn-off energy
Eoff
VCE = 400 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω,
Lσ = 70 nH, Cσ = 30 pF
Tvj = 25 °C,
IC = 40.0 A
Tvj = 175 °C,
IC = 40.0 A
Datasheet
4
Revision 1.20
2021-03-22
IHW40N65R6
Reverse-Conducting IGBT
3 Diode
Table 3
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
1.52
Unit
Total switching energy
Ets
VCE = 400 V, VGE = 15 V,
RGon = 10.0 Ω,
Tvj = 25 °C,
IC = 40.0 A
mJ
RGoff = 10.0 Ω,
Tvj = 175 °C,
IC = 40.0 A
1.88
0.11
0.22
Lσ = 70 nH, Cσ = 30 pF
Sof turn-off energy
Eoff
VCE = 162 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω, Cr = 30 nF,
Lσ = 70 nH, Cσ = 30 pF
Tvj = 25 °C,
IC = 40.0 A
mJ
Tvj = 175 °C,
IC = 40.0 A
IGBT thermal resistance,
junction-case
Rthjc
Tvj
0.71 K/W
Operating junction
temperature
-40
175
°C
3
Diode
Table 4
Maximum rated values
Symbol Note or test condition
VRRM Tvj ≥ 25 °C
Parameter
Values
Unit
Repetitive peak reverse
voltage
650
V
Diode forward current,
limited by Tvjmax
IF
TC = 25 °C
35
21
A
TC = 100 °C
Diode pulsed current,
limited by Tvjmax
IFpuls
Ptot
120
A
Power dissipation
TC = 25 °C
54
27
W
TC = 100 °C
Table 5
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
V
Min. Typ. Max.
Diode forward voltage
Reverse leakage current
VF
IR
IF = 40.0 A
VR = 650 V
Tvj = 25 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 175 °C
1.50
1.66
1.90
40
µA
1000
Datasheet
5
Revision 1.20
2021-03-22
IHW40N65R6
Reverse-Conducting IGBT
3 Diode
Table 5
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
99
Unit
Diode reverse recovery time
trr
Qrr
Irrm
VR = 400 V
VR = 400 V
VR = 400 V
Tvj = 25 °C,
ns
IF = 40.0 A,
-diF/dt = 1000 A/µs
Tvj = 175 °C,
IF = 40.0 A,
-diF/dt = 1000 A/µs
133
2.16
3.77
35.0
46.0
-926
-901
Diode reverse recovery
charge
Tvj = 25 °C,
IF = 40.0 A,
-diF/dt = 1000 A/µs
µC
Tvj = 175 °C,
IF = 40.0 A,
-diF/dt = 1000 A/µs
Diode peak reverse recovery
current
Tvj = 25 °C,
IF = 40.0 A,
-diF/dt = 1000 A/µs
A
Tvj = 175 °C,
IF = 40.0 A,
-diF/dt = 1000 A/µs
Diode peak rate off fall of
reverse recovery current
dIrr/dt VR = 400 V
Tvj = 25 °C,
IF = 40.0 A,
-diF/dt = 1000 A/µs
A/µs
Tvj = 175 °C,
IF = 40.0 A,
-diF/dt = 1000 A/µs
Diode thermal resistance,
junction-case
Rthjc
Tvj
2.77 K/W
175 °C
Operating junction
temperature
-40
Datasheet
6
Revision 1.20
2021-03-22
IHW40N65R6
Reverse-Conducting IGBT
4 Characteristics diagrams
4
Characteristics diagrams
Power dissipation as a function of case temperature, Collector current as a function of case temperature,
IGBT
IGBT
Ptot = f(Tc)
IC = f(Tc)
Tvj≤175 °C
Tvj≤175 °C, VGE = 15 V
210
180
150
120
90
90
80
70
60
50
40
30
20
10
0
60
30
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Typical output characteristic, IGBT
IC = f(VCE
Typical output characteristic, IGBT
IC = f(VCE
)
)
Tvj = 25 °C
Tvj = 175 °C
120
120
100
80
60
40
20
0
100
80
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Datasheet
7
Revision 1.20
2021-03-22
IHW40N65R6
Reverse-Conducting IGBT
4 Characteristics diagrams
Typical transfer characteristic, IGBT
Typical collector-emitter saturation voltage as a
function of junction temperature, IGBT
VCEsat = f(Tvj)
IC = f(VGE
)
VCE = 20 V
VGE = 15 V
120
2.00
1.75
1.50
1.25
1.00
0.75
0.50
100
80
60
40
20
0
25
50
75
100
125
150
175
2
3
4
5
6
7
8
Typical switching times as a function of collector
current, IGBT
Typical switching times as a function of gate resistor,
IGBT
t = f(IC)
t = f(RG)
RGoff = 10.0 Ω, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RGon
10.0 Ω
=
IC = 40.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V
1000
100
10
1000
100
10
1
1
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
80
Datasheet
8
Revision 1.20
2021-03-22
IHW40N65R6
Reverse-Conducting IGBT
4 Characteristics diagrams
Typical switching times as a function of junction
temperature, IGBT
Gate-emitter threshold voltage as a function of
junction temperature, IGBT
t = f(Tvj)
VGEth = f(Tvj)
IC = 40.0 A, RGoff = 10.0 Ω, VCE = 400 V, VGE = 0/15 V, RGon
10.0 Ω
=
IC = 0.40 mA
1000
100
10
6
5
4
3
2
1
0
1
25
50
75
100
125
150
175
25
50
75
100
125
150
Typical switching energy losses as a function of
collector current, IGBT
Typical switching energy losses as a function of gate
resistor, IGBT
E = f(IC)
E = f(RG)
RGoff = 10.0 Ω, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RGon
10.0 Ω
=
IC = 40.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V
9
8
7
6
5
4
3
2
1
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
80
Datasheet
9
Revision 1.20
2021-03-22
IHW40N65R6
Reverse-Conducting IGBT
4 Characteristics diagrams
Typical switching energy losses as a function of
junction temperature, IGBT
Typical softsꢀwichwng iurntoff energy loss as a
function of collector current, IGBT
E = f(Tvj)
E = f(IC)
IC = 40.0 A, RGoff = 10.0 Ω, VCE = 400 V, VGE = 0/15 V, RGon
10.0 Ω
=
RGoff = 10.0 Ω, Tvj = 175 °C, VGE = 0/15 V
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
Typical gate charge, IGBT
Typical capacitance as a function of collector-emitter
voltage, IGBT
VGE = f(QGE
)
C = f(VCE
)
IC = 40.0 A
f = 100 kHz, VGE = 0 V
16
14
12
10
8
10000
1000
100
10
6
4
2
0
0
1
20
40
60
80
100 120 140 160
0
5
10
15
20
25
30
Datasheet
10
Revision 1.20
2021-03-22
IHW40N65R6
Reverse-Conducting IGBT
4 Characteristics diagrams
IGBT transient thermal resistance, IGBT
Zth = f(tp)
D = tp/T
Diode transient thermal impedance as a function of
pulse width, Diode
Zth = f(tp)
D = tp/T
1
0.1
1
0.1
0.01
0.01
0.001
0.0001
0.001
1E-7
1E-6
1E-5 0.0001 0.001
0.01
0.1
1E-7
1E-6
1E-5 0.0001 0.001
0.01
0.1
Typical reverse recovery time as a function of diode
current slope, Diode
Typical reverse recovery charge as a function of diode
current slope, Diode
trr = f(diF/dt)
Qrr = f(diF/dt)
VR = 400 V, IF = 40.0 A
VR = 400 V, IF = 40.0 A
300
250
200
150
100
50
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.0
500 600 700 800 900 1000 1100 1200 1300
500 600 700 800 900 1000 1100 1200 1300
Datasheet
11
Revision 1.20
2021-03-22
IHW40N65R6
Reverse-Conducting IGBT
4 Characteristics diagrams
Typical reverse recovery current as a function of diode Typical diode peak rate of fall of reverse recovery
current slope, Diode
Irr = f(diF/dt)
current as a function of diode current slope, Diode
dIrr/dt = f(diF/dt)
VR = 400 V, IF = 40.0 A
IF = 40.0 A, VR = 400 V
60
50
40
30
20
10
0
-200
-400
-600
-800
-1000
-1200
-1400
500 600 700 800 900 1000 1100 1200 1300
500 600 700 800 900 1000 1100 1200 1300
Typical diode forward current as a function of forward Typical diode forward voltage as a function of
voltage, Diode
junction temperature, Diode
IF = f(VF)
VF = f(Tvj)
120
100
80
60
40
20
0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Datasheet
12
Revision 1.20
2021-03-22
IHW40N65R6
Reverse-Conducting IGBT
5 Package outlines
5
Package outlines
Package Drawing PG-TO247-3
MILLIMETERS
MAX.
DIMENSIONS
MIN.
4.70
2.20
1.50
1.00
1.60
2.57
0.38
20.70
13.08
0.51
15.50
12.38
3.40
1.00
A
A1
A2
b
5.30
2.60
2.50
1.40
2.41
3.43
0.89
21.50
17.65
1.35
16.30
14.15
5.10
2.60
DOCUMENT NO.
Z8B00003327
b1
b2
c
REVISION
D
06
D1
D2
E
SCALE 3:1
0 1 2 3 4 5mm
E1
E2
E3
e
EUROPEAN PROJECTION
5.44
L
19.80
3.85
3.50
5.35
6.04
20.40
4.50
3.70
6.25
6.30
L1
P
ISSUE DATE
25.07.2018
Q
S
Figure 6
Datasheet
13
Revision 1.20
2021-03-22
IHW40N65R6
Reverse-Conducting IGBT
6 Testing conditions
6
Testing conditions
VGE(t)
I,V
90% VGE
t
rr = ta + tb
dIF/dt
Q
rr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
10% IC
90% IC
10% IC
Figure C. Definition of diode switching
t
characteristics
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
s
parasitic capacitor C ,
s
relief capacitor C ,
r
t2
t4
(only for ZVT switching)
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Figure 7
Datasheet
14
Revision 1.20
2021-03-22
IHW40N65R6
Reverse-Conducting IGBT
Revision history
Revision history
Revision
1.00
Date of release Description of changes
2020.12.21
2021.02.22
2021.03.21
Final datasheet
1.10
Sof turn-off energy data changed. Editorial changes in graph.
Dynamic characteristic change from 1000 kHz to 100 kHz
1.20
Datasheet
15
Revision 1.20
2021-03-22
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-03-22
Published by
Infineon Technologies AG
81726 Munich, Germany
IMPORTANT NOTICE
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
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