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IKD10N60RA [INFINEON]

Insulated Gate Bipolar Transistor;
IKD10N60RA
型号： IKD10N60RA
厂家： Infineon    Infineon
描述：

Insulated Gate Bipolar Transistor

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中文：  中文翻译
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IGBT  
IGBTꢀwithꢀintegratedꢀdiodeꢀinꢀpackagesꢀofferingꢀspaceꢀsavingꢀadvantage  
IKD10N60RA  
600VꢀTRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
Dataꢀsheet  
IndustrialꢀPowerꢀControl  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
IGBTꢀwithꢀintegratedꢀdiodeꢀinꢀpackagesꢀofferingꢀspaceꢀsavingꢀadvantage  
ꢀ
C
E
Features:  
TRENCHSTOPTMꢀReverseꢀConductingꢀ(RC)ꢀtechnologyꢀforꢀ600V  
applicationsꢀoffering  
•ꢀOptimisedꢀVCEsatꢀandꢀVFꢀforꢀlowꢀconductionꢀlosses  
•ꢀSmoothꢀswitchingꢀperformanceꢀleadingꢀtoꢀlowꢀEMIꢀlevels  
•ꢀVeryꢀtightꢀparameterꢀdistribution  
G
•ꢀOperatingꢀrangeꢀofꢀ1ꢀtoꢀ20kHz  
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C  
•ꢀShortꢀcircuitꢀcapabilityꢀofꢀ5µs  
C
•ꢀBestꢀinꢀclassꢀcurrentꢀversusꢀpackageꢀsizeꢀperformance  
•ꢀQualifiedꢀaccordingꢀtoꢀAECQ101  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliantꢀ(forꢀPG-TO252:ꢀsolder  
temperatureꢀ260°C,ꢀMSL1)  
G
CompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  
http://www.infineon.com/igbt/  
E
Applications:  
•ꢀHIDꢀlighting  
•ꢀPiezoꢀinjection  
KeyꢀPerformanceꢀandꢀPackageꢀParameters  
Type  
VCE  
IC  
VCEsat,ꢀTvj=25°C Tvjmax  
1.65V 175°C  
Marking  
K10R60A  
Package  
IKD10N60RA  
600V  
10A  
PG-TO252-3  
2
Rev.ꢀ2.2,ꢀꢀ2014-02-28  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  
3
Rev.ꢀ2.2,ꢀꢀ2014-02-28  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
Maximumꢀratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
VCE  
600  
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
TCꢀ=ꢀ25°C  
TCꢀ=ꢀ100°C  
IC  
20.0  
10.0  
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
ICpuls  
30.0  
30.0  
A
A
TurnꢀoffꢀsafeꢀoperatingꢀareaꢀVCEꢀ≤ꢀ600V,ꢀTvjꢀ≤ꢀ175°C  
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
TCꢀ=ꢀ25°C  
TCꢀ=ꢀ100°C  
IF  
20.0  
10.0  
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
IFpuls  
VGE  
30.0  
±20  
A
V
Gate-emitter voltage  
Short circuit withstand time  
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V  
Allowed number of short circuits < 1000  
Time between short circuits: ≥ 1.0s  
Tvjꢀ=ꢀ150°C  
tSC  
µs  
5
PowerꢀdissipationꢀTCꢀ=ꢀ25°C  
Operating junction temperature  
Storage temperature  
Ptot  
Tvj  
150.0  
W
°C  
°C  
-40...+175  
-55...+175  
Tstg  
Soldering temperature,  
reflow soldering (MSL1 according to JEDEC J-STA-020)  
°C  
260  
ThermalꢀResistance  
Parameter  
Symbol Conditions  
Max.ꢀValue  
Unit  
Characteristic  
IGBT thermal resistance,1)  
junction - case  
Diode thermal resistance,2)  
junction - case  
Rth(j-c)  
Rth(j-c)  
Rth(j-a)  
1.00  
2.60  
75  
K/W  
K/W  
K/W  
Thermal resistance, min. footprint  
junction - ambient  
Thermal resistance, 6cm² Cu on  
PCB  
Rth(j-a)  
50  
K/W  
junction - ambient  
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.  
2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.  
4
Rev.ꢀ2.2,ꢀꢀ2014-02-28  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
StaticꢀCharacteristic  
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA  
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ10.0A  
600  
-
-
V
V
Collector-emitter saturation voltage VCEsat  
Tvjꢀ=ꢀ25°C  
-
-
1.65 2.10  
1.85  
Tvjꢀ=ꢀ175°C  
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ10.0A  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Diode forward voltage  
VF  
-
-
1.70 2.10  
V
V
1.70  
-
Gate-emitter threshold voltage  
VGE(th)  
ICꢀ=ꢀ0.17mA,ꢀVCEꢀ=ꢀVGE  
4.3  
5.0  
5.7  
VCEꢀ=ꢀ600V,ꢀVGEꢀ=ꢀ0V  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Zero gate voltage collector current1) ICES  
-
-
-
-
40.0 µA  
1000.0  
Gate-emitter leakage current  
Transconductance  
IGES  
gfs  
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V  
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ10.0A  
-
-
-
100  
-
nA  
S
6.1  
Integrated gate resistor  
rG  
none  
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
DynamicꢀCharacteristic  
Input capacitance  
Cies  
-
-
-
655  
37  
-
-
-
Output capacitance  
Coes  
Cres  
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  
pF  
Reverse transfer capacitance  
22  
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ10.0A,  
VGEꢀ=ꢀ15V  
Gate charge  
QG  
-
-
64.0  
74  
-
-
nC  
A
Short circuit collector current  
Max. 1000 short circuits  
Time between short circuits: ≥ 1.0s  
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V,  
tSCꢀ≤ꢀ5µs  
Tvjꢀ=ꢀ25°C  
IC(SC)  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
14  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ10.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
rGꢀ=ꢀ23.0Ω,ꢀLσꢀ=ꢀ60nH,  
Cσꢀ=ꢀ40pF  
10  
Turn-off delay time  
Fall time  
192  
139  
0.21  
0.38  
0.59  
ns  
ns  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Turn-on energy  
Eon  
Eoff  
Ets  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
1) Not subject to production test - verified by design/characterization  
5
Rev.ꢀ2.2,ꢀꢀ2014-02-28  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
62  
-
-
-
ns  
µC  
A
Tvjꢀ=ꢀ25°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ10.0A,  
diF/dtꢀ=ꢀ1000A/µs  
Qrr  
0.56  
20.3  
Diode peak reverse recovery current Irrm  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-260  
-
A/µs  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
13  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ175°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ10.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
rGꢀ=ꢀ23.0Ω,ꢀLσꢀ=ꢀ60nH,  
Cσꢀ=ꢀ40pF  
11  
Turn-off delay time  
Fall time  
217  
211  
0.35  
0.58  
0.93  
ns  
ns  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Turn-on energy  
Eon  
Eoff  
Ets  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
98  
-
-
-
ns  
µC  
A
Tvjꢀ=ꢀ175°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ10.0A,  
Qrr  
1.22  
20.5  
Diode peak reverse recovery current Irrm  
diF/dtꢀ=ꢀ1000A/µs  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-259  
-
A/µs  
6
Rev.ꢀ2.2,ꢀꢀ2014-02-28  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
11  
10  
9
10  
8
7
tp=1µs  
10µs  
20µs  
6
5
50µs  
1
4
100µs  
500µs  
DC  
3
2
1
Ptot=8,6W, Rthja=8,4K/W  
0
0.1  
0.1  
1
10  
100  
1
10  
100  
1000  
f,ꢀSWITCHINGꢀFREQUENCYꢀ[kHz]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 1. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀswitching  
frequency  
Figure 2. Forwardꢀbiasꢀsafeꢀoperatingꢀarea  
(D=0,ꢀTC=25°C,ꢀTvj≤175°C;ꢀVGE=15V)  
(Tvj≤175°C, Ta=55°C, D=0.5, VCE=400V,  
VGE=15/0V, rG=23Ω, PCB mounting with  
thermal vias and heatsink, see Appnote:  
www.infineon.com/igbt)  
160  
140  
120  
100  
80  
20  
15  
10  
5
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75  
100  
125  
150  
175  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
Figure 3. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  
Figure 4. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
temperature  
(Tvj≤175°C)  
(VGE≥15V,ꢀTvj≤175°C)  
7
Rev.ꢀ2.2,ꢀꢀ2014-02-28  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
30  
25  
20  
15  
10  
5
30  
VGE=20V  
17V  
15V  
13V  
11V  
9V  
VGE=20V  
17V  
25  
15V  
13V  
11V  
9V  
20  
15  
10  
5
7V  
7V  
0
0
0
1
2
3
4
0
1
2
3
4
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 5. Typicalꢀoutputꢀcharacteristic  
(Tvj=25°C)  
Figure 6. Typicalꢀoutputꢀcharacteristic  
(Tvj=175°C)  
30  
3.5  
Tj=25°C  
IC=5A  
Tj=175°C  
IC=10A  
IC=20A  
3.0  
25  
20  
15  
10  
5
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0
4
6
8
10  
12  
14  
0
25  
50  
75  
100  
125  
150  
175  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 7. Typicalꢀtransferꢀcharacteristic  
(VCE=10V)  
Figure 8. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas  
aꢀfunctionꢀofꢀjunctionꢀtemperature  
(VGE=15V)  
8
Rev.ꢀ2.2,ꢀꢀ2014-02-28  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
1000  
100  
10  
1000  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
100  
10  
1
1
0
5
10  
15  
20  
10  
20  
30  
40  
50  
60  
70  
80  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
rG,ꢀGATEꢀRESISTORꢀ[Ω]  
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
collectorꢀcurrent  
Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate  
resistor  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,  
VGE=15/0V,ꢀrG=23Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,  
VGE=15/0V,ꢀIC=10A,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
1000  
7
td(off)  
tf  
td(on)  
tr  
typ.  
min.  
max.  
6
5
4
3
2
100  
10  
1
25  
50  
75  
100  
125  
150  
175  
25  
50  
75  
100  
125  
150  
175  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 11. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
junctionꢀtemperature  
Figure 12. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction  
ofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,  
IC=10A,ꢀrG=23Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
(IC=0.17mA)  
9
Rev.ꢀ2.2,ꢀꢀ2014-02-28  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
1.5  
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
1.0  
0.5  
0.0  
0
5
10  
15  
20  
10  
20  
30  
40  
50  
60  
70  
80  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
rG,ꢀGATEꢀRESISTORꢀ[Ω]  
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀcurrent  
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀgateꢀresistor  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,  
VGE=15/0V,ꢀrG=23Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,  
VGE=15/0V,ꢀIC=10A,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
1.0  
1.2  
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0.8  
0.6  
0.4  
0.2  
0.0  
25  
50  
75  
100  
125  
150  
175  
300  
350  
400  
450  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,  
IC=10A,ꢀrG=23Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
Figure 16. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀemitterꢀvoltage  
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=15/0V,  
IC=10A,ꢀrG=23Ω,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
10  
Rev.ꢀ2.2,ꢀꢀ2014-02-28  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
16  
14  
12  
10  
8
1000  
120V  
480V  
Cies  
Coes  
Cres  
100  
6
4
2
0
10  
0
10  
20  
30  
40  
50  
60  
70  
0
5
10  
15  
20  
25  
30  
QGE,ꢀGATEꢀCHARGEꢀ[nC]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 17. Typicalꢀgateꢀcharge  
(IC=10A)  
Figure 18. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  
collector-emitterꢀvoltage  
(VGE=0V,ꢀf=1MHz)  
150  
100  
50  
14  
12  
10  
8
6
4
2
0
0
12  
14  
16  
18  
20  
10  
11  
12  
13  
14  
15  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
Figure 19. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa  
functionꢀofꢀgate-emitterꢀvoltage  
Figure 20. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof  
gate-emitterꢀvoltage  
(VCE≤400V,ꢀstartꢀatꢀTvj=25°C)  
(VCE≤400V,ꢀstartꢀatꢀTvj≤150°C)  
11  
Rev.ꢀ2.2,ꢀꢀ2014-02-28  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
1
1
D=0.5  
D=0.5  
0.2  
0.2  
0.1  
0.1  
0.05  
0.1  
0.05  
0.02  
0.02  
0.01  
0.01  
single pulse  
single pulse  
0.1  
0.01  
i:  
ri[K/W]: 0.0972 0.4393 0.3919 0.0443  
τi[s]: 1.1E-4 4.5E-4 2.0E-3 0.03487  
1
2
3
4
i:  
ri[K/W]: 0.3192 1.604 0.6161 0.0732  
τi[s]: 6.4E-5 2.6E-4 1.6E-3 0.0218066  
1
2
3
4
0.001  
0.01  
1E-7 1E-6 1E-5 1E-4 0.001 0.01  
0.1  
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01  
0.1  
1
tp,ꢀPULSEꢀWIDTHꢀ[s]  
tp,ꢀPULSEꢀWIDTHꢀ[s]  
Figure 21. IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa  
functionꢀofꢀpulseꢀwidthꢀ1)ꢀ(seeꢀpageꢀ4)  
(D=tp/T)  
Figure 22. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa  
functionꢀofꢀpulseꢀwidthꢀ2)ꢀ(seeꢀpageꢀ4)  
(D=tp/T)  
150  
1.50  
Tj=175°C, IF = 10A  
Tj=25°C, IF = 10A  
Tj=175°C, IF = 10A  
Tj=25°C, IF = 10A  
125  
100  
75  
50  
25  
0
1.25  
1.00  
0.75  
0.50  
0.25  
900  
1000  
1100  
1200  
900  
1000  
1100  
1200  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
Figure 23. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 24. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa  
ofꢀdiodeꢀcurrentꢀslope  
functionꢀofꢀdiodeꢀcurrentꢀslope  
(VR=400V)  
(VR=400V)  
12  
Rev.ꢀ2.2,ꢀꢀ2014-02-28  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
22  
21  
20  
19  
0
Tj=175°C, IF = 10A  
Tj=25°C, IF = 10A  
Tj=175°C, IF = 10A  
Tj=25°C, IF = 10A  
-100  
-200  
-300  
-400  
900  
1000  
1100  
1200  
900  
1000  
1100  
1200  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
Figure 25. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa  
functionꢀofꢀdiodeꢀcurrentꢀslope  
(VR=400V)  
Figure 26. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse  
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode  
currentꢀslope  
(VR=400V)  
30  
2.5  
Tj=25°C, UG=0V  
IF=5A  
IF=10A  
IF=20A  
Tj=175°C, UG=0V  
20  
2.0  
1.5  
1.0  
10  
0
0
1
2
3
0
25  
50  
75  
100  
125  
150  
175  
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 27. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 28. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature  
13  
Rev.ꢀ2.2,ꢀꢀ2014-02-28  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
-
-
2
2
PG  
5 3  
TO  
14  
Rev.ꢀ2.2,ꢀꢀ2014-02-28  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
vGE(t)  
90% VGE  
a
b
a
b
t
iC(t)  
90% IC  
10% IC  
90% IC  
10% IC  
t
vCE(t)  
t
t
td(off)  
tf  
td(on)  
tr  
vGE(t)  
90% VGE  
10% VGE  
t
iC(t)  
2% IC  
t
vCE(t)  
2% VCE  
t
t1  
t2  
t3  
t4  
15  
Rev.ꢀ2.2,ꢀꢀ2014-02-28  
IKD10N60RA  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
RevisionꢀHistory  
IKD10N60RA  
Revision:ꢀ2014-02-28,ꢀRev.ꢀ2.2  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2010-06-10 Preliminary datasheet  
2010-10-28 Release of final datasheet  
2014-02-28 Data sheet with AECQ logo  
1.1  
2.1  
2.2  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀallꢀ?  
Yourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuouslyꢀimproveꢀtheꢀqualityꢀofꢀthisꢀdocument.  
Pleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:ꢀerratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMunich,ꢀGermany  
81726ꢀMünchen,ꢀGermany  
©ꢀ2014ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.  
Withꢀrespectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀthe  
applicationꢀofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,  
includingꢀwithoutꢀlimitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀprices,ꢀpleaseꢀcontactꢀtheꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀin  
question,ꢀpleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystems  
and/orꢀautomotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineon  
Technologies,ꢀifꢀaꢀfailureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,  
automotive,ꢀaviationꢀandꢀaerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLife  
supportꢀdevicesꢀorꢀsystemsꢀareꢀintendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustain  
and/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbe  
endangered.  
16  
Rev.ꢀ2.2,ꢀꢀ2014-02-28  

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