IKD10N60RC2 [INFINEON]

IGBT RC Drives 2;
IKD10N60RC2
型号: IKD10N60RC2
厂家: Infineon    Infineon
描述:

IGBT RC Drives 2

双极性晶体管
文件: 总16页 (文件大小:1453K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
CostꢀeffectiveꢀmonolithicallyꢀintegratedꢀIGBTꢀwithꢀDiode  
C
E
Features:  
TRENCHSTOPTMꢀReverseꢀConductingꢀ(RC)ꢀtechnologyꢀforꢀ600V  
applicationsꢀoffering  
•ꢀVeryꢀtightꢀparameterꢀdistribution  
•ꢀOperatingꢀrangeꢀupꢀtoꢀ20kHz  
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C  
•ꢀShortꢀcircuitꢀcapabilityꢀofꢀ3µs  
G
•ꢀHumidityꢀrobustꢀdesign  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:  
http://www.infineon.com/rc-d2  
PotentialꢀApplications:  
•ꢀMajorꢀHomeꢀAppliances  
ꢀꢀꢀ-ꢀAirꢀConditioning  
ꢀꢀꢀ-ꢀRefrigerators  
G
•ꢀDrives  
ꢀꢀꢀ-ꢀGPDꢀ(GeneralꢀPurposeꢀDrives)  
E
ProductꢀValidation:  
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests  
ofꢀJEDEC47/20/22  
KeyꢀPerformanceꢀandꢀPackageꢀParameters  
Type  
VCE  
IC  
VCEsat,ꢀTvj=25°C Tvjmax  
2V 175°C  
Marking  
Package  
IKD10N60RC2  
600V  
10A  
K10DRC2  
PG-TO252-3  
Datasheet  
www.infineon.com  
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument  
Vꢀ2.1  
2020-09-28  
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  
Datasheet  
2
Vꢀ2.1  
2020-09-28  
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
MaximumꢀRatings  
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.  
Parameter  
Symbol  
Value  
Unit  
Collector-emitterꢀvoltage,ꢀTvjꢀ25°C  
VCE  
600  
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
Tcꢀ=ꢀ25°C  
Tcꢀ=ꢀ100°C  
IC  
18.8  
12.6  
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
ICpuls  
30.0  
30.0  
A
A
Turn off safe operating area  
VCEꢀ600V,ꢀTvjꢀ175°C,ꢀtpꢀ=ꢀ1µs  
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
Tcꢀ=ꢀ25°C  
Tcꢀ=ꢀ100°C  
IF  
8.9  
4.6  
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
IFpuls  
VGE  
30.0  
A
V
Gate-emitter voltage  
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ10µs,ꢀDꢀ<ꢀ0.010)  
±20  
±25  
Short circuit withstand time  
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ400V  
Allowed number of short circuits < 1000  
Time between short circuits: 1.0s  
Tvjꢀ=ꢀ150°C  
tSC  
µs  
3
PowerꢀdissipationꢀTcꢀ=ꢀ25°C  
PowerꢀdissipationꢀTcꢀ=ꢀ100°C  
79.0  
39.5  
Ptot  
W
Operating junction temperature  
Storage temperature  
Tvj  
-40...+175  
-55...+150  
°C  
°C  
Tstg  
Soldering temperature,  
reflow soldering (MSL1 according to JEDEC J-STA-020)  
°C  
260  
ThermalꢀResistance  
Value  
min. typ. max.  
Parameter  
Symbol Conditions  
Unit  
RthꢀCharacteristics  
IGBT thermal resistance,1)  
junction - case  
Diode thermal resistance,2)  
junction - case  
Rth(j-c)  
Rth(j-c)  
Rth(j-a)  
-
-
-
-
-
-
1.90 K/W  
6.10 K/W  
75 K/W  
Thermal resistance, min. footprint  
junction - ambient  
Thermal resistance, 6cm² Cu on  
PCB  
Rth(j-a)  
-
-
50 K/W  
junction - ambient  
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.  
2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.  
Datasheet  
3
Vꢀ2.1  
2020-09-28  
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
StaticꢀCharacteristic  
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ10.0A  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Collector-emitter saturation voltage VCEsat  
-
-
2.00 2.30  
2.40  
V
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ10.0A  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Diode forward voltage  
VF  
-
-
1.90 2.20  
V
V
1.95  
-
Gate-emitter threshold voltage  
VGE(th)  
ICꢀ=ꢀ0.11mA,ꢀVCEꢀ=ꢀVGE  
4.3  
5.0  
5.7  
VCEꢀ=ꢀ600V,ꢀVGEꢀ=ꢀ0V  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Zero gate voltage collector current ICES  
-
-
-
-
25  
2500  
µA  
Gate-emitter leakage current  
Transconductance  
IGES  
gfs  
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V  
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ10.0A  
-
-
-
100  
-
nA  
S
4.5  
Integrated gate resistor  
rG  
none  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
DynamicꢀCharacteristic  
Input capacitance  
Cies  
-
-
-
400  
20  
-
-
-
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V  
fꢀ=ꢀ1000kHz  
Output capacitance  
Coes  
Cres  
pF  
nC  
Reverse transfer capacitance  
15  
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ10.0A,  
VGEꢀ=ꢀ15V  
Gate charge  
QG  
-
48.0  
-
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
14  
13  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ10.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ49.0,ꢀRG(off)ꢀ=ꢀ49.0,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ32pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
250  
21  
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
0.32  
0.17  
0.49  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
Datasheet  
4
Vꢀ2.1  
2020-09-28  
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
104  
337.00  
9.5  
-
-
-
ns  
nC  
A
Tvjꢀ=ꢀ25°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ10.0A,  
Qrr  
Diode peak reverse recovery current Irrm  
diF/dtꢀ=ꢀ758A/µs  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-190  
-
A/µs  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
9
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ175°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ10.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ49.0,ꢀRG(off)ꢀ=ꢀ49.0,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ32pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
17  
Turn-off delay time  
Fall time  
270  
16  
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
0.42  
0.20  
0.62  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
157  
631.00  
11.5  
-
-
-
ns  
nC  
A
Tvjꢀ=ꢀ175°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ10.0A,  
Qrr  
Diode peak reverse recovery current Irrm  
diF/dtꢀ=ꢀ673A/µs  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-109  
-
A/µs  
Datasheet  
5
Vꢀ2.1  
2020-09-28  
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
80  
70  
60  
50  
40  
30  
20  
10  
0
20  
18  
16  
14  
12  
10  
8
6
4
2
0
25  
50  
75  
100  
125  
150  
175  
25  
50  
75  
100  
125  
150  
175  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
temperature  
(Tvj175°C)  
(VGE15V,ꢀTvj175°C)  
30  
30  
VGE=20V  
VGE=20V  
17V  
17V  
25  
25  
15V  
15V  
13V  
13V  
11V  
11V  
20  
20  
9V  
9V  
7V  
7V  
15  
15  
10  
5
10  
5
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 3. Typicalꢀoutputꢀcharacteristic  
(Tvj=25°C)  
Figure 4. Typicalꢀoutputꢀcharacteristic  
(Tvj=175°C)  
Datasheet  
6
Vꢀ2.1  
2020-09-28  
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
30  
25  
20  
15  
10  
5
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Tj=25°C  
Tj=175°C  
IC=5A  
IC=10A  
IC=20A  
0
2
4
6
8
10  
12  
14  
25  
50  
75  
100  
125  
150  
175  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 5. Typicalꢀtransferꢀcharacteristic  
(VCE=20V)  
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas  
aꢀfunctionꢀofꢀjunctionꢀtemperature  
(VGE=15V)  
1000  
1000  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
100  
10  
1
100  
10  
1
4
6
8
10  
12  
14  
16  
18  
20  
0
10  
20  
30  
40  
50  
60  
70  
80  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
RG,ꢀGATEꢀRESISTORꢀ[]  
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
collectorꢀcurrent  
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate  
resistor  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,  
VGE=15/0V,ꢀRG=49,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,  
VGE=15/0V,ꢀIC=10A,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
Datasheet  
7
Vꢀ2.1  
2020-09-28  
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
1000  
100  
10  
6
5
4
3
2
1
0
td(off)  
tf  
td(on)  
tr  
typ.  
1
25  
50  
75  
100  
125  
150  
175  
25  
50  
75  
100  
125  
150  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
junctionꢀtemperature  
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction  
ofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,  
IC=10A,ꢀRG=49,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
(IC=0.11mA)  
1.50  
1.0  
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
0.8  
0.6  
0.4  
0.2  
0.0  
4
6
8
10  
12  
14  
16  
18  
20  
0
10  
20  
30  
40  
50  
60  
70  
80  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
RG,ꢀGATEꢀRESISTORꢀ[]  
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀcurrent  
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀgateꢀresistor  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,  
VGE=15/0V,ꢀRG=49,ꢀDynamicꢀtestꢀcircuitꢀin  
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,  
VGE=15/0V,ꢀIC=10A,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
Figure E)  
Datasheet  
8
Vꢀ2.1  
2020-09-28  
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
25  
50  
75  
100  
125  
150  
175  
200  
250  
300  
350  
400  
450  
500  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,  
IC=10A,ꢀRG=49,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀemitterꢀvoltage  
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=15/0V,  
IC=10A,ꢀRG=49,ꢀDynamicꢀtestꢀcircuitꢀin  
Figure E)  
16  
VCCꢀ=ꢀ120V  
VCCꢀ=ꢀ480V  
Cies  
Coes  
Cres  
1000  
14  
12  
10  
8
100  
6
10  
4
2
0
1
0
10  
20  
30  
40  
50  
0
5
10  
15  
20  
25  
30  
QGE,ꢀGATEꢀCHARGEꢀ[nC]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 15. Typicalꢀgateꢀcharge  
(IC=10A)  
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  
collector-emitterꢀvoltage  
(VGE=0V,ꢀf=1MHz)  
Datasheet  
9
Vꢀ2.1  
2020-09-28  
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
100  
90  
1
80  
70  
D=0.5  
0.2  
0.1  
0.05  
60  
0.1  
0.02  
0.01  
50  
40  
single pulse  
30  
0.01  
20  
10  
i:  
1
2
3
4
5
ri[K/W]: 0.20592 1.3715 0.25597 0.01911 8.5E-4  
τi[s]:  
1.6E-4  
7.2E-4 3.5E-3  
0.117109 3.637676  
0
0.001  
1E-7  
12  
13  
14  
15  
16  
17  
18  
1E-6  
1E-5  
1E-4  
0.001  
0.01  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
tp,ꢀPULSEꢀWIDTHꢀ[s]  
Figure 17. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa  
functionꢀofꢀgate-emitterꢀvoltage  
Figure 18. IGBTꢀtransientꢀthermalꢀresistance  
(D=tp/T)  
(VCE400V,ꢀTvj150°C)  
10  
200  
Tj=25°C, IF = 10A  
Tj=175°C, IF = 10A  
175  
150  
125  
100  
75  
D=0.5  
1
0.2  
0.1  
0.05  
0.02  
0.01  
0.1  
single pulse  
0.01  
50  
25  
i:  
1
2
3
4
5
ri[K/W]: 0.45292 4.55  
1.03948 0.056147  
8.7E-4  
τi[s]:  
5.6E-5  
2.7E-4 1.7E-3  
0.04327206 3.67377  
0.001  
1E-7  
0
500  
1E-6  
1E-5  
1E-4  
0.001  
0.01  
1000  
1500  
2000  
2500  
3000  
tp,ꢀPULSEꢀWIDTHꢀ[s]  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
Figure 19. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa  
Figure 20. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction  
ofꢀdiodeꢀcurrentꢀslope  
functionꢀofꢀpulseꢀwidth  
(D=tp/T)  
(VR=400V)  
Datasheet  
10  
Vꢀ2.1  
2020-09-28  
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
800  
700  
600  
500  
400  
300  
200  
100  
0
25  
20  
15  
10  
5
Tj=25°C, IF = 10A  
Tj=175°C, IF = 10A  
Tj=25°C, IF = 10A  
Tj=175°C, IF = 10A  
0
500  
1000  
1500  
2000  
2500  
3000  
500  
1000  
1500  
2000  
2500  
3000  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
Figure 21. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa  
functionꢀofꢀdiodeꢀcurrentꢀslope  
(VR=400V)  
Figure 22. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa  
functionꢀofꢀdiodeꢀcurrentꢀslope  
(VR=400V)  
0
30  
Tj=25°C, IF = 10A  
Tj=175°C, IF = 10A  
Tj=25°C  
Tj=175°C  
-100  
-200  
-300  
-400  
-500  
-600  
25  
20  
15  
10  
5
0
500  
1000  
1500  
2000  
2500  
3000  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]  
Figure 23. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse  
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode  
currentꢀslope  
Figure 24. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction  
ofꢀforwardꢀvoltage  
(VR=400V)  
Datasheet  
11  
Vꢀ2.1  
2020-09-28  
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
3.5  
IF=5A  
IF=10A  
IF=20A  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
25  
50  
75  
100  
125  
150  
175  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 25. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  
ofꢀjunctionꢀtemperature  
Datasheet  
12  
Vꢀ2.1  
2020-09-28  
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
Package Drawing PG-TO252-3  
DOCUMENT NO.  
Z8B00003328  
MILLIMETERS  
DIM  
MIN  
2.16  
0.00  
0.64  
0.65  
4,95  
0.46  
0.40  
5.97  
5.02  
6.35  
4.32  
MAX  
2.41  
0.15  
0.89  
1.15  
5.50  
0.61  
0.98  
6.22  
5.84  
6.73  
5.21  
0
A
A1  
b
SCALE  
2.5  
b2  
b3  
c
0
2.5  
5mm  
c2  
D
EUROPEAN PROJECTION  
D1  
E
E1  
e
2.29 (BSC)  
4.57 (BSC)  
3
e1  
N
ISSUE DATE  
05-02-2016  
H
9.40  
1.18  
0.89  
0.51  
10.48  
L
1.78  
1.27  
1.02  
REVISION  
L3  
L4  
06  
Datasheet  
13  
Vꢀ2.1  
2020-09-28  
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
Testing Conditions  
VGE(t)  
I,V  
90% VGE  
trr = ta + tb  
dIF/dt  
Qrr = Qa + Qb  
a
b
10% VGE  
t
Qa  
Qb  
IC(t)  
dI  
90% IC  
90% IC  
10% IC  
10% IC  
Figure C. Definition of diode switching  
characteristics  
t
VCE(t)  
t
t
td(off)  
tf  
td(on)  
tr  
Figure A.  
VGE(t)  
90% VGE  
Figure D.  
10% VGE  
t
IC(t)  
CC  
2% IC  
t
VCE(t)  
Figure E. Dynamic test circuit  
Parasitic inductance L ,  
parasitic capacitor C ,  
s
s
relief capacitor C ,  
(only for ZVT switching)  
r
t2  
t4  
E
=
VCE x IC x dt  
E
=
VCE x IC x dt  
off  
on  
2% VCE  
t1  
t3  
t
t1  
t2  
t3  
t4  
Figure B.  
Datasheet  
14  
Vꢀ2.1  
2020-09-28  
IKD10N60RC2  
TRENCHSTOPTMꢀRC-Seriesꢀforꢀhardꢀswitchingꢀapplications  
RevisionꢀHistory  
IKD10N60RC2  
Revision:ꢀ2020-09-28,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.1  
2020-09-28 Final data sheet  
Datasheet  
15  
Vꢀ2.1  
2020-09-28  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀInfineonꢀTechnologiesꢀAGꢀ2020.  
AllꢀRightsꢀReserved.  
ImportantꢀNotice  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics  
(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany  
informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand  
liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird  
party.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀof  
theꢀproductꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
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completenessꢀofꢀtheꢀproductꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
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Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion  
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