IKD10N60RFATMA1 [INFINEON]
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel,;
| 型号： | IKD10N60RFATMA1 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 栅 |
| 文件： | 总16页 (文件大小：1560K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
IGBTꢀwithꢀintegratedꢀdiodeꢀinꢀpackagesꢀofferingꢀspaceꢀsavingꢀadvantage
ꢀ
C
E
Features:
TRENCHSTOPTMꢀReverseꢀConductingꢀ(RC)ꢀtechnologyꢀforꢀ600V
applicationsꢀoffering
•ꢀOptimizedꢀEon,ꢀEoffꢀandꢀQrrꢀforꢀlowꢀswitchingꢀlosses
•ꢀOperatingꢀrangeꢀofꢀ4ꢀtoꢀ30kHz
•ꢀSmoothꢀswitchingꢀperformanceꢀleadingꢀtoꢀlowꢀEMIꢀlevels
•ꢀVeryꢀtightꢀparameterꢀdistribution
G
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀShortꢀcircuitꢀcapabilityꢀofꢀ5µs
•ꢀBestꢀinꢀclassꢀcurrentꢀversusꢀpackageꢀsizeꢀperformance
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliantꢀ(solderꢀtemperature
260°C,ꢀMSL1)
C
CompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
G
Applications:
E
Domesticꢀandꢀindustrialꢀdrives:
•ꢀCompressors
•ꢀPumps
•ꢀFans
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
2.2V 175°C
Marking
Package
IKD10N60RF
600V
10A
K10R60F
PG-TO252-3
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
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IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IC
20.0
10.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
30.0
30.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ600V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IF
20.0
10.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
30.0
±20
A
V
Gate-emitter voltage
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
tSC
µs
5
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
Operating junction temperature
Storage temperature
Ptot
Tvj
150.0
W
°C
°C
-40...+175
-55...+150
Tstg
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,1)
junction - case
Diode thermal resistance,2)
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
1.00 K/W
2.60 K/W
75 K/W
Thermal resistance, min. footprint
junction - ambient
Thermal resistance, 6cm² Cu on
PCB
Rth(j-a)
-
-
50 K/W
junction - ambient
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.
2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
Datasheet
3
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IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ10.0A
600
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
2.20 2.50
2.30
Tvjꢀ=ꢀ175°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ10.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
2.10 2.40
V
V
2.00
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.17mA,ꢀVCEꢀ=ꢀVGE
4.3
5.0
5.7
VCEꢀ=ꢀ600V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current1) ICES
-
-
-
-
40
1000
µA
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ10.0A
-
-
-
100
-
nA
S
4.6
Integrated gate resistor
rG
none
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
655
37
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
22
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ10.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
64.0
7.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V,
tSCꢀ≤ꢀ5µs
Tvjꢀ=ꢀ25°C
IC(SC)
-
-
A
74
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
12
15
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ10.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ26.0Ω,ꢀRG(off)ꢀ=ꢀ26.0Ω,
Lσꢀ=ꢀ50nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Turn-off delay time
Fall time
168
18
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.19
0.16
0.35
mJ
mJ
mJ
Turn-off energy
Total switching energy
1) Not subject to production test - verified by design/characterization
Datasheet
4
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2017-09-26
IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
72
0.27
9.1
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ10.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ750A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-146
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
12
15
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ10.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ26.0Ω,ꢀRG(off)ꢀ=ꢀ26.0Ω,
Lσꢀ=ꢀ50nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Turn-off delay time
Fall time
178
20
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.31
0.21
0.52
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
112
0.62
12.9
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ10.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ720A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-136
-
A/µs
Datasheet
5
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2017-09-26
IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
10
9
8
7
6
5
4
3
2
1
0
10
not for linear use
1
0.1
0.1
1
10
100
1
10
100
1000
f,ꢀSWITCHINGꢀFREQUENCYꢀ[kHz]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 1. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀswitching
frequency
Figure 2. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTC=25°C,ꢀTvj≤175°C;ꢀVGE=15V)
(Tvj≤175°C,ꢀTa=55°C,ꢀD=0.5,ꢀVCE=400V,
VGE=15/0V,ꢀrG=26Ω,ꢀPCBꢀmountingꢀwith
thermal vias and heatsink, see Appnote:
www.infineon.com/igbt)
160
140
120
100
80
20
18
16
14
12
10
8
60
6
40
4
20
2
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 3. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 4. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tvj≤175°C)
(VGE≥15V,ꢀTvj≤175°C)
Datasheet
6
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IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
30
30
25
20
15
10
5
VGE = 20V
VGE = 20V
17V
17V
25
15V
13V
15V
13V
20
11V
11V
9V
9V
7V
7V
15
10
5
0
0
0
1
2
3
4
0
1
2
3
4
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
Figure 6. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
30
4.0
Tj = 25°C
Tj = 175°C
IC = 1A
IC = 5A
IC = 10A
IC = 20A
3.5
25
20
15
10
5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
4
6
8
10
12
14
0
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 7. Typicalꢀtransferꢀcharacteristic
(VCE=10V)
Figure 8. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
Datasheet
7
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IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
1000
100
10
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
1
5.0
7.5
10.0
12.5
15.0
17.5
20.0
0
10 20 30 40 50 60 70 80 90 100 110
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=26Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=10A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
7
td(off)
tf
td(on)
tr
typ.
min.
max.
6
5
4
3
2
1
100
10
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 11. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 12. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=10A,ꢀrG=26Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(IC=0,17mA)
Datasheet
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IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
1.0
0.8
0.6
0.4
0.2
0.0
5.0
7.5
10.0
12.5
15.0
17.5
20.0
10
20
30
40
50
60
70
80
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=26Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=10A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.8
Eoff
Eon
Ets
Eoff
Eon
Ets
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
175
300
325
350
375
400
425
450
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=10A,ꢀrG=26Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 16. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=15/0V,
IC=10A,ꢀrG=26Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
9
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2017-09-26
IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
16
1000
100
10
VCCꢀ=ꢀ120V
VCCꢀ=ꢀ480V
14
12
10
8
Cies
Coes
Cres
6
4
2
0
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀgateꢀcharge
(IC=10A)
Figure 18. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
160
140
120
100
80
12
10
8
6
60
4
40
2
20
0
0
12
14
16
18
20
10
11
12
13
14
15
16
17
18
19
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 19. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
Figure 20. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
gate-emitterꢀvoltage
(VCE≤400V,ꢀstartꢀatꢀTvj=25°C)
(VCE≤400V,ꢀstartꢀatꢀTvj=150°C)
Datasheet
10
Vꢀ2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
1
1
D = 0.5
0.2
D = 0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.1
0.01
0.01
single pulse
single pulse
0.1
i:
ri[K/W]: 0.0972 0.4393 0.3919 0.0443
τi[s]: 1.1E-4 4.5E-4 2.0E-3 0.03487
1
2
3
4
i:
ri[K/W]: 0.3192 1.604 0.6161 0.0732
τi[s]: 6.4E-5 2.6E-4 1.6E-3 0.021807
1
2
3
4
0.01
0.01
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 21. IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidthꢀ1)ꢀ(seeꢀpageꢀ4)
(D=tp/T)
Figure 22. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidthꢀ2)ꢀ(seeꢀpageꢀ4)
(D=tp/T)
150
0.8
Tj = 25°C, IF = 10A
Tj = 175°C, IF = 10A
Tj = 25°C, IF = 10A
Tj = 175°C, IF = 10A
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
125
100
75
50
25
0
700
900 1100 1300 1500 1700 1900
700
900 1100 1300 1500 1700 1900
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 24. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
Datasheet
11
Vꢀ2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
30
0
-200
Tj = 25°C, IF = 10A
Tj = 175°C, IF = 10A
Tj = 25°C, IF = 10A
Tj = 175°C, IF = 10A
25
20
15
10
5
-400
-600
-800
-1000
0
-1200
700
900 1100 1300 1500 1700 1900
700
900 1100 1300 1500 1700 1900
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 25. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 26. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
30
25
3.0
IF = 1A
IF = 5A
2.5
IF = 10A
IF = 20A
20
2.0
1.5
1.0
0.5
Tj = 175°C, VGE = 0V
Tj = 25°C, VGE = 0V
15
10
5
0
0
1
2
3
4
0
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 27. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 28. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
Package Drawing PG-TO252-3
DOCUMENT NO.
Z8B00003328
MILLIMETERS
DIM
MIN
2.16
0.00
0.64
0.65
4,95
0.46
0.40
5.97
5.02
6.35
4.32
MAX
2.41
0.15
0.89
1.15
5.50
0.61
0.98
6.22
5.84
6.73
5.21
0
A
A1
b
SCALE
2.5
b2
b3
c
0
2.5
5mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29 (BSC)
4.57 (BSC)
3
e1
N
ISSUE DATE
05-02-2016
H
9.40
1.18
0.89
0.51
10.48
L
1.78
1.27
1.02
REVISION
L3
L4
06
Datasheet
13
Vꢀ2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.5
2017-09-26
IKD10N60RF
TRENCHSTOPTMꢀRC-DrivesꢀFastꢀSeries
RevisionꢀHistory
IKD10N60RF
Revision:ꢀ2017-09-26,ꢀRev.ꢀ2.5
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2.2
2.3
2.4
2.5
2012-02-24 Final data sheet
2013-12-10 New value ICES max limit at 175°C
2014-02-26 Without PB free logo
2014-03-12 Storage temp -55...+150°C
2017-09-26 Update Fig. 13 E(Ic)
Datasheet
15
Vꢀ2.5
2017-09-26
Trademarks
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Publishedꢀby
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81726ꢀMünchen,ꢀGermany
©ꢀInfineonꢀTechnologiesꢀAGꢀ2018.
AllꢀRightsꢀReserved.
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(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany
informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand
liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird
party.
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