IKFW75N65EH5_技术文档

IKFW75N65EH5

TRENCHSTOP^TMꢀ5ꢀAdvancedꢀIsolation

Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOP^TMꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1

fastꢀandꢀsoftꢀantiparallelꢀdiode

ꢀ

C

FeaturesꢀandꢀBenefits:

TRENCHSTOP^TMꢀ5ꢀtechnologyꢀoffering

•ꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant

topologies

•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs

•ꢀ650Vꢀbreakdownꢀvoltage

•ꢀLowꢀgateꢀchargeꢀQ_G

G

E

•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀantiparallelꢀdiode

•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C

•ꢀ2500V_RMSꢀelectricalꢀisolation,ꢀ50/60Hz,ꢀt=1min

•ꢀ100%ꢀtestedꢀisolatedꢀmountingꢀsurface

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:

http://www.infineon.com/igbt/

PotentialꢀApplications:

Fully isolated package TO-247

•ꢀResidentialꢀandꢀCommercialꢀAirconꢀPFC

•ꢀWeldingꢀconverters

•ꢀMidꢀtoꢀhighꢀrangeꢀswitchingꢀfrequencyꢀconverters

ProductꢀValidation:

Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests

ofꢀJEDEC47/20/22

KeyꢀPerformanceꢀandꢀPackageꢀParameters

Type

V_CE

I_C

V_CEsat,ꢀT_vj=25°C T_vjmax

1.65V 175°C

Marking

Package

IKFW75N65EH5

650V

60A

K75EEH5

PG-HSIP247-3-2

Datasheet

PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument

Vꢀ2.1

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2020-07-24

IKFW75N65EH5

TRENCHSTOP^TMꢀ5ꢀAdvancedꢀIsolation

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Datasheet

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TRENCHSTOP^TMꢀ5ꢀAdvancedꢀIsolation

MaximumꢀRatings

Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.

Parameter

Symbol

Value

Unit

Collector-emitterꢀvoltage,ꢀT_vjꢀ≥ꢀ25°C

V_CE

650

V

DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀT_vjmax

T_hꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire

T_hꢀ=ꢀ65°C

80.0

66.0

I_C

A

T_hꢀ=ꢀ65°C

104.0¹⁾

Pulsedꢀcollectorꢀcurrent,ꢀt_pꢀlimitedꢀbyꢀT_vjmax

I_Cpuls

240.0

A

Turn off safe operating area

V_CEꢀ≤ꢀ650V,ꢀT_vjꢀ≤ꢀ175°C,ꢀt_pꢀ=ꢀ1µs

-

Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀT_vjmax

T_hꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire

T_hꢀ=ꢀ65°C

I_F

80.0

74.0

A

Diodeꢀpulsedꢀcurrent,ꢀt_pꢀlimitedꢀbyꢀT_vjmax

I_Fpuls

V_GE

240.0

A

V

Gate-emitter voltage

TransientꢀGate-emitterꢀvoltageꢀ(t_pꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)

±20

±30

PowerꢀdissipationꢀT_hꢀ=ꢀ25°C

PowerꢀdissipationꢀT_hꢀ=ꢀ65°C

148.0

109.0

P_tot

W

Operating junction temperature

Storage temperature

T_vj

-40...+175

-55...+150

°C

T_stg

Soldering temperature,

wave soldering 1.6mm (0.063in.) from case for 10s

°C

260

0.6

Mounting torque, M3 screw

Maximum of mounting processes: 3

IsolationꢀvoltageꢀRMS,ꢀfꢀ=ꢀ50/60Hz,ꢀtꢀ=ꢀ1min²⁾

M

Nm

V

V_isol

2500

ThermalꢀResistance

Value

min. typ. max.

Parameter

Symbol Conditions

Unit

R_thꢀCharacteristics

IGBT thermal resistance,³⁾

junction - heatsink

Diode thermal resistance,³⁾

junction - heatsink

R_th(j-h)

R_th(j-a)

-

0.86 1.01 K/W

0.97 1.14 K/W

Thermal resistance

junction - ambient

-

65 K/W

¹⁾Equivalent current rating in TO-247-3 at T_h= 65°C using reference insulation material: 152µm, 0.9 W/mK, standard polyimide based reinforced carrier

insulator

²⁾For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.

³⁾At force on body F = 500N, T_a= 25ºC

Datasheet

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TRENCHSTOP^TMꢀ5ꢀAdvancedꢀIsolation

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

StaticꢀCharacteristic

Collector-emitter breakdown voltage V_(BR)CESV_GEꢀ=ꢀ0V,ꢀI_Cꢀ=ꢀ0.50mA

V_GEꢀ=ꢀ15.0V,ꢀI_Cꢀ=ꢀ60.0A

650

-

V

Collector-emitter saturation voltage V_CEsat

T_vjꢀ=ꢀ25°C

-

1.65 2.10

1.95

T_vjꢀ=ꢀ175°C

-

V_GEꢀ=ꢀ0V,ꢀI_Fꢀ=ꢀ60.0A

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ175°C

Diode forward voltage

V_F

-

1.45 1.70

V

1.39

-

Gate-emitter threshold voltage

V_GE(th)

I_Cꢀ=ꢀ0.60mA,ꢀV_CEꢀ=ꢀV_GE

3.2

4.0

4.8

V_CEꢀ=ꢀ650V,ꢀV_GEꢀ=ꢀ0V

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ175°C

Zero gate voltage collector current I_CES

-

40

2000

µA

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V_CEꢀ=ꢀ0V,ꢀV_GEꢀ=ꢀ20V

V_CEꢀ=ꢀ20V,ꢀI_Cꢀ=ꢀ60.0A

-

100

-

nA

S

72.0

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

DynamicꢀCharacteristic

Input capacitance

C_ies

-

3600

105

13

-

V_CEꢀ=ꢀ25V,ꢀV_GEꢀ=ꢀ0V

fꢀ=ꢀ1000kHz

Output capacitance

C_oes

C_res

pF

Reverse transfer capacitance

V_CCꢀ=ꢀ520V,ꢀI_Cꢀ=ꢀ60.0A,

V_GEꢀ=ꢀ15V

Gate charge

Q_G

L_E

-

144.0

13.0

-

nC

nH

Internal emitter inductance

measured 5mm (0.197 in.) from

case

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

IGBTꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

30

35

-

ns

T_vjꢀ=ꢀ25°C,

V_CCꢀ=ꢀ400V,ꢀI_Cꢀ=ꢀ60.0A,

V_GEꢀ=ꢀ0.0/15.0V,

R_G(on)ꢀ=ꢀ12.0Ω,ꢀR_G(off)ꢀ=ꢀ12.0Ω,

Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF

Lσ,ꢀCσꢀfromꢀFig.ꢀE

Energy losses include “tail” and

diode reverse recovery.

Turn-off delay time

Fall time

206

42

ns

Turn-on energy

E_on

E_off

E_ts

1.80

0.60

2.40

mJ

Turn-off energy

Total switching energy

Datasheet

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TRENCHSTOP^TMꢀ5ꢀAdvancedꢀIsolation

DiodeꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C

Diode reverse recovery time

Diode reverse recovery charge

t_rr

-

75

-

ns

µC

A

T_vjꢀ=ꢀ25°C,

V_Rꢀ=ꢀ400V,

I_Fꢀ=ꢀ60.0A,

di_F/dtꢀ=ꢀ1000A/µs

Q_rr

1.40

23.5

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-

-1150

-

A/µs

SwitchingꢀCharacteristic,ꢀInductiveꢀLoad

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

IGBTꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ150°C

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

29

36

-

ns

T_vjꢀ=ꢀ150°C,

V_CCꢀ=ꢀ400V,ꢀI_Cꢀ=ꢀ60.0A,

V_GEꢀ=ꢀ0.0/15.0V,

R_G(on)ꢀ=ꢀ12.0Ω,ꢀR_G(off)ꢀ=ꢀ12.0Ω,

Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF

Lσ,ꢀCσꢀfromꢀFig.ꢀE

Energy losses include “tail” and

diode reverse recovery.

Turn-off delay time

Fall time

228

36

ns

Turn-on energy

E_on

E_off

E_ts

2.40

0.72

3.12

mJ

Turn-off energy

Total switching energy

DiodeꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ150°C

Diode reverse recovery time

Diode reverse recovery charge

t_rr

-

118

3.40

36.5

-

ns

µC

A

T_vjꢀ=ꢀ150°C,

V_Rꢀ=ꢀ400V,

I_Fꢀ=ꢀ60.0A,

Q_rr

Diode peak reverse recovery current I_rrm

di_F/dtꢀ=ꢀ1000A/µs

Diode peak rate of fall of reverse

recoveryꢀcurrentꢀduringꢀt_b

di_rr/dt

-

-1700

-

A/µs

Datasheet

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TRENCHSTOP^TMꢀ5ꢀAdvancedꢀIsolation

150

125

100

75

80

70

60

50

40

30

20

10

0

50

25

0

25

50

75

100

125

150

175

25

50

75

100

125

150

175

T_h,ꢀHEATSINKꢀTEMPERATUREꢀ[°C]

Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀheatsink

Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀheatsink

temperature

(T_j≤175°C)

(V_GE≥15V,ꢀT_j≤175°C)

180

160

140

120

100

80

160

140

120

100

80

V_GE= 20V

18V

15V

12V

10V

8V

V_GE= 20V

18V

15V

12V

10V

8V

7V

6V

60

5V

40

20

0

1

2

3

4

5

0

1

2

3

4

5

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

Figure 3. Typicalꢀoutputꢀcharacteristic

(T_j=25°C)

Figure 4. Typicalꢀoutputꢀcharacteristic

(T_j=175°C)

Datasheet

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TRENCHSTOP^TMꢀ5ꢀAdvancedꢀIsolation

180

3.5

3.0

2.5

2.0

1.5

1.0

0.5

T_vj= 25°C

T_vj= 175°C

I_C= 30A

I_C= 60A

I_C= 120A

160

140

120

100

80

60

40

20

0

3

4

5

6

7

8

9

25

50

75

100

125

150

175

V_GE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]

T_j,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 5. Typicalꢀtransferꢀcharacteristic

(V_CE=20V)

Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas

aꢀfunctionꢀofꢀjunctionꢀtemperature

(V_GE=15V)

t_d(off)

t_f

t_d(off)

t_f

1000

t_d(on)

t_r

t_d(on)

t_r

1000

100

10

1

100

10

1

0

30

60

90

120

150

180

10

20

30

40

50

60

70

80

90

I_C,ꢀCOLLECTORꢀCURRENTꢀ[A]

R_G,ꢀGATEꢀRESISTORꢀ[Ω]

Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof

Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate

resistor

collectorꢀcurrent

(ind.ꢀload,ꢀT_j=150°C,ꢀV_CE=400V,ꢀV_GE=0/15V,

R_G=12Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)

(ind.ꢀload,ꢀT_j=150°C,ꢀV_CE=400V,ꢀV_GE=0/15V,

I_C=60A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)

Datasheet

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TRENCHSTOP^TMꢀ5ꢀAdvancedꢀIsolation

1000

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

t_d(off)

t_f

t_d(on)

t_r

typ.

min.

max.

100

10

1

25

50

75

100

125

150

25

50

75

100

125

150

T_j,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof

junctionꢀtemperature

Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction

ofꢀjunctionꢀtemperature

(ind.ꢀload,ꢀV_CE=400V,ꢀV_GE=0/15V,ꢀI_C=60A,

r_G=12Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)

(I_C=0.6mA)

14

9

E_off

E_on

E_off

E_on

8

7

6

5

4

3

2

1

0

E_ts

12

10

8

6

4

2

0

30

60

90

120

150

180

10

20

30

40

50

60

70

80

90

I_C,ꢀCOLLECTORꢀCURRENTꢀ[A]

R_G,ꢀGATEꢀRESISTORꢀ[Ω]

Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀcollectorꢀcurrent

functionꢀofꢀgateꢀresistor

(ind.ꢀload,ꢀT_j=150°C,ꢀV_CE=400V,ꢀV_GE=0/15V,

R_G=12Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)

(ind.ꢀload,ꢀT_j=150°C,ꢀV_CE=400V,ꢀV_GE=0/15V,

I_C=60A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)

Datasheet

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TRENCHSTOP^TMꢀ5ꢀAdvancedꢀIsolation

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

E_off

E_on

E_ts

E_off

E_on

E_ts

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

25

50

75

100

125

150

175

200

250

300

350

400

450

500

T_j,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀjunctionꢀtemperature

Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa

functionꢀofꢀcollectorꢀemitterꢀvoltage

(ind.ꢀload,ꢀT_j=150°C,ꢀV_GE=0/15V,ꢀI_C=60A,

R_G=12Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)

(indꢀload,ꢀV_CE=400V,ꢀV_GE=0/15V,ꢀI_C=60A,

R_G=12Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)

16

V_CCꢀ=ꢀ130V

V_CCꢀ=ꢀ520V

C_ies

C_oes

1E+4

C_res

14

12

10

8

1000

100

10

1

6

4

2

0

25

50

75

100

125

150

0

5

10

15

20

25

30

Q_GE,ꢀGATEꢀCHARGEꢀ[nC]

V_CE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]

Figure 15. Typicalꢀgateꢀcharge

(I_C=60A)

Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof

collector-emitterꢀvoltage

(V_GE=0V,ꢀf=1MHz)

Datasheet

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TRENCHSTOP^TMꢀ5ꢀAdvancedꢀIsolation

1

D = 0.5

0.2

D = 0.5

0.2

0.1

0.05

0.02

0.01

single pulse

0.01

0.001

1E-4

0.01

i:

r_i[K/W]: 3.4E-3 0.110355 0.131565 0.188265 0.321405 0.19467 0.016485

τ_i[s]: 2.0E-5 2.9E-4 2.8E-3 0.023721 0.289111 1.294166 18.68143

1

2

3

4

5

6

7

i:

r_i[K/W]: 5.3E-3 0.134715 0.16149 0.20202 0.32256 0.194565 0.01649

τ_i[s]: 2.5E-5 2.9E-4 2.8E-3 0.0233 0.28843 1.29282 18.68457

1

2

3

4

5

6

7

0.001

1E-6 1E-5 1E-4 0.001 0.01

0.1

1

10

1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1

1

10

t_p,ꢀPULSEꢀWIDTHꢀ[s]

Figure 17. IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa

functionꢀofꢀpulseꢀwidth

Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa

functionꢀofꢀpulseꢀwidth

(D=t_p/T)

160

4.0

T_vj= 25°C, I_F= 60A

T_vj= 175°C, I_F= 60A

T_vj= 25°C, I_F= 60A

T_vj= 175°C, I_F= 60A

140

120

100

80

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

60

40

20

0

800 900 1000 1100 1200 1300 1400 1500 1600 1700

di_F/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]

Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa

ofꢀdiodeꢀcurrentꢀslope

functionꢀofꢀdiodeꢀcurrentꢀslope

(V_R=400V)

Datasheet

10

Vꢀ2.1

2020-07-24

IKFW75N65EH5

TRENCHSTOP^TMꢀ5ꢀAdvancedꢀIsolation

60

0

-500

T_vj= 25°C, I_F= 60A

T_vj= 175°C, I_F= 60A

T_vj= 25°C, I_F= 60A

T_vj= 175°C, I_F= 60A

50

40

30

20

10

-1000

-1500

-2000

-2500

-3000

-3500

-4000

0

800 900 1000 1100 1200 1300 1400 1500 1600 1700

di_F/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]

Figure 21. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa

functionꢀofꢀdiodeꢀcurrentꢀslope

(V_R=400V)

Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse

recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode

currentꢀslope

(V_R=400V)

180

2.50

T_vj= 25°C

T_vj= 175°C

I_F= 30A

I_F= 60A

I_F= 120A

160

2.25

140

120

100

80

2.00

1.75

1.50

1.25

1.00

0.75

0.50

60

40

20

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

25

50

75

100

125

150

175

V_F,ꢀFORWARDꢀVOLTAGEꢀ[V]

T_j,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]

Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction

ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature

Datasheet

11

Vꢀ2.1

2020-07-24

IKFW75N65EH5

TRENCHSTOP^TMꢀ5ꢀAdvancedꢀIsolation

PG-HSIP247-3-2

MILLIMETERS

DIMENSIONS

MIN.

-

MAX.

5.18

4.90

2.66

0.28

1.50

0.51

1.90

MIN.

MAX.

A

A1

A2

A3

A4

A5

A6

A7

b

e

5.44

4.70

2.16

0.20

1.30

0.31

1.70

E

15.70

13.68

15.90

13.88

E1

E2

E3

E4

E5

E6

L

DOCUMENT NO.

Z8B00195711

(6.00)

3.24

4.39

3.44

4.59

REVISION

01

(1.45)

(0.25)

0.76

18.01

2.26

1.50

3.50

5.70

6.06

0.96

18.21

2.46

1.70

3.70

5.90

6.26

SCALE 3:1

1.10

1.30

0 1 2 3 4 5 6 7 8mm

b1

b2

b3

c

(2.88)

(1.60)

L1

L2

P

-

0.15

0.70

EUROPEAN PROJECTION

0.50

22.70

16.96

2.34

-

P1

Q

D

22.90

17.16

2.54

D1

D2

D3

D4

D5

0.30

ISSUE DATE

28.06.2019

4.35

19.70

4.55

19.90

Datasheet

12

Vꢀ2.1

2020-07-24

IKFW75N65EH5

TRENCHSTOP^TMꢀ5ꢀAdvancedꢀIsolation

Testing Conditions

V_GE(t)

I,V

90% V_GE

t_rr= t_a+ t_b

dI_F/dt

Q_rr= Q_a+ Q_b

a

b

10% V_GE

t

Q_a

Q_b

I_C(t)

dI

90% I_C

10% I_C

Figure C. Definition of diode switching

characteristics

t

V_CE(t)

t

t_d(off)

t_f

t_d(on)

t_r

Figure A.

V_GE(t)

90% V_GE

Figure D.

10% V_GE

t

I_C(t)

CC

2% I_C

t

V_CE(t)

Figure E. Dynamic test circuit

Parasitic inductance L ,

parasitic capacitor C ,

s

relief capacitor C ,

(only for ZVT switching)

r

t₂

t₄

E

=

V_CEx I_Cx dt

E

=

V_CEx I_Cx dt

off

on

2% V_CE

t₁

t₃

t

t₁

t₂

t₃

t₄

Figure B.

Datasheet

13

Vꢀ2.1

2020-07-24

IKFW75N65EH5

TRENCHSTOP^TMꢀ5ꢀAdvancedꢀIsolation

RevisionꢀHistory

IKFW75N65EH5

Revision:ꢀ2020-07-24,ꢀRev.ꢀ2.1

Previous Revision

Revision Date

Subjects (major changes since last revision)

2.1

2020-07-24 Final Data Sheet

Datasheet

14

Vꢀ2.1

2020-07-24

Trademarks

Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.

ꢀ

Publishedꢀby

InfineonꢀTechnologiesꢀAG

81726ꢀMünchen,ꢀGermany

AllꢀRightsꢀReserved.

ImportantꢀNotice

Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics

(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany

informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand

liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird

party.

Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis

documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀof

theꢀproductꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.

Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀof

customer’sꢀtechnicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀthe

completenessꢀofꢀtheꢀproductꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.

Forꢀfurtherꢀinformationꢀonꢀtheꢀproduct,ꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearest

InfineonꢀTechnologiesꢀofficeꢀ(www.infineon.com).

PleaseꢀnoteꢀthatꢀthisꢀproductꢀisꢀnotꢀqualifiedꢀaccordingꢀtoꢀtheꢀAECꢀQ100ꢀorꢀAECꢀQ101ꢀdocumentsꢀofꢀtheꢀAutomotive

ElectronicsꢀCouncil.

Warnings

Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion

pleaseꢀcontactꢀyourꢀnearestꢀInfineonꢀTechnologiesꢀoffice.

ExceptꢀasꢀotherwiseꢀexplicitlyꢀapprovedꢀbyꢀInfineonꢀTechnologiesꢀinꢀaꢀwrittenꢀdocumentꢀsignedꢀbyꢀauthorized

representativesꢀofꢀInfineonꢀTechnologies,ꢀInfineonꢀTechnologies’ꢀproductsꢀmayꢀnotꢀbeꢀusedꢀinꢀanyꢀapplicationsꢀwhereꢀa

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型号：	IKFW75N65EH5
厂家：	Infineon
描述：	IGBT TRENCHSTOP™ 5 双极性晶体管
文件：	总15页 (文件大小：1473K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IKFW75N65EH5 [INFINEON]

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