IKQ40N120CT2 [INFINEON]
IGBT TRENCHSTOP™ 2;
| 型号： | IKQ40N120CT2 |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 2 双极性晶体管 |
| 文件： | 总16页 (文件大小：1635K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKQ40N120CT2
TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
LowꢀVce(sat)ꢀIGBTꢀinꢀTRENCHSTOP™ꢀ2ꢀtechnologyꢀcopackedꢀwithꢀsoft,ꢀfast
recoveryꢀfullꢀcurrentꢀratedꢀanti-parallelꢀEmitterꢀControlledꢀDiode
ꢀ
C
Features:
TRENCHSTOP™ꢀ2ꢀtechnologyꢀoffers:
•ꢀVeryꢀlowꢀVCE(sat),ꢀ1.75Vꢀatꢀnominalꢀcurrent
•ꢀ10µsecꢀshortꢀcircuitꢀwithstandꢀtimeꢀatꢀTvj=175°C
•ꢀEasyꢀparallelingꢀcapabilityꢀdueꢀtoꢀpositiveꢀtemperature
coefficientꢀinꢀVCE(sat)
G
E
•ꢀLowꢀEMI
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀfullꢀcurrentꢀanti-parallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt
Applications:
•ꢀGPDꢀ(GeneralꢀPurposeꢀDrives)
•ꢀServoꢀDrives
•ꢀCommercialꢀVehicles
•ꢀAgriculturalꢀVehicles
•ꢀThree-levelꢀSolarꢀStringꢀInverter
•ꢀWelding
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.75V 175°C
Marking
Package
PG-TO247-3-46
IKQ40N120CT2
1200V
40A
K40MCT2
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.3
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TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
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TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
1200
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
Tcꢀ=ꢀ135°C
IC
80.0
40.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
160.0
160.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ1200V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
Tcꢀ=ꢀ100°C
IF
80.0
40.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
160.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ600V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ175°C
tSC
µs
10
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ135°C
500.0
133.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
0.30 K/W
0.50 K/W
40 K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Datasheet
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TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.50mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ40.0A
1200
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
1.75 2.15
2.30
Tvjꢀ=ꢀ175°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ40.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
1.90 2.30
V
V
1.85
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ1.50mA,ꢀVCEꢀ=ꢀVGE
5.1
5.8
6.5
VCEꢀ=ꢀ1200V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
250
-
µA
3000
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ40.0A
-
-
-
100
-
nA
S
15.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
2385
235
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
132
VCCꢀ=ꢀ960V,ꢀICꢀ=ꢀ40.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
190.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
32
43
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ40.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ90nH,ꢀCσꢀ=ꢀ67pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
328
51
ns
ns
Turn-on energy
Eon
Eoff
Ets
3.10
2.90
6.00
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
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TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
298
3.10
18.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ600V,
IFꢀ=ꢀ40.0A,
diF/dtꢀ=ꢀ1000A/µs
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-120
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
30
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ40.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ12.0Ω,ꢀRG(off)ꢀ=ꢀ12.0Ω,
Lσꢀ=ꢀ90nH,ꢀCσꢀ=ꢀ67pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
44
Turn-off delay time
Fall time
420
110
5.10
4.70
9.80
ns
ns
Turn-on energy
Eon
Eoff
Ets
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
488
7.40
27.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ600V,
IFꢀ=ꢀ40.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1000A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-103
-
A/µs
Datasheet
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TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
500
100
400
not for linear use
10
300
200
100
0
1
0.1
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTC=25°C,ꢀTvj≤175°C;ꢀVGE=15V)
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
temperature
(Tvj≤175°C)
80
70
60
50
40
30
20
10
0
160
VGE=20V
17V
140
15V
13V
11V
9V
120
100
80
60
40
20
0
7V
5V
25
50
75
100
125
150
175
0
1
2
3
4
5
6
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
Datasheet
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TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
160
140
120
100
80
160
140
120
100
80
VGE=20V
17V
15V
13V
11V
9V
Tvj = 25°C
Tvj = 175°C
7V
5V
60
60
40
40
20
20
0
0
0
1
2
3
4
5
6
2
4
6
8
10
12
14
16
18
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
4.5
1000
IC = 20A
IC = 40A
IC = 80A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
td(off)
tf
td(on)
tr
100
10
1
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=15/0V,ꢀrG=12Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
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TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
1000
100
10
1000
100
10
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
1
1
0
5
10
15
20
25
30
35
40
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=15/0V,ꢀIC=40A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=15/0V,
IC=40A,ꢀrG=12Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
27
24
21
18
15
12
9
typ.
min.
max.
Eoff
Eon
Ets
6
3
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
(IC=1.5mA)
functionꢀofꢀcollectorꢀcurrent
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=15/0V,ꢀrG=12Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
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TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
15.0
13.5
12.0
10.5
9.0
10
9
8
7
6
5
4
3
2
1
0
Eoff
Eon
Ets
Eoff
Eon
Ets
7.5
6.0
4.5
3.0
1.5
0.0
0
5
10
15
20
25
30
35
40
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=15/0V,
IC=40A,ꢀrG=12Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=15/0V,ꢀIC=40A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
15.0
16
Eoff
Eon
Ets
VCCꢀ=ꢀ240V
VCCꢀ=ꢀ960V
13.5
14
12
10
8
12.0
10.5
9.0
7.5
6.0
4.5
3.0
1.5
0.0
6
4
2
0
400 450 500 550 600 650 700 750 800
0
50
100
150
200
250
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QGE,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=15/0V,
IC=40A,ꢀrG=12Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 16. Typicalꢀgateꢀcharge
(IC=40A)
Datasheet
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TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
1E+4
1000
100
300
250
200
150
100
50
Cies
Coes
Cres
10
0
0
5
10
15
20
25
30
10
11
12
13
14
15
16
17
18
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
(VCE≤600V,ꢀTvj≤175°C)
45
40
35
30
25
20
15
10
5
D = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
ri[K/W]: 0.016055 0.117494 0.15756 3.3E-3
3.4E-4
τi[s]:
4.1E-4
2.8E-3
0.018313 0.491884 12.38553
0
0.001
1E-6
10
12
14
16
18
20
1E-5
1E-4
0.001
0.01
0.1
1
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 19. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof Figure 20. IGBTꢀtransientꢀthermalꢀresistance
gate-emitterꢀvoltage
(D=tp/T)
(VCE≤600V,ꢀstartꢀatꢀTvj≤175°C)
Datasheet
10
Vꢀ2.3
2019-04-15
IKQ40N120CT2
TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
1
800
700
600
500
400
300
200
100
0
Tvj = 25°C, IF = 40A
Tvj = 175°C, IF = 40A
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
ri[K/W]: 0.02668 0.22581 0.24167 5.3E-3
3.9E-4
τi[s]:
3.3E-4
2.7E-3
0.01549 0.40258 11.77304
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
500
700
900
1100
1300
1500
tp,ꢀPULSEꢀWIDTHꢀ[s]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 22. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidth
(D=tp/T)
(VR=600V)
8
35
Tvj = 25°C, IF = 40A
Tvj = 175°C, IF = 40A
Tvj = 25°C, IF = 40A
Tvj = 175°C, IF = 40A
7
6
5
4
3
2
1
0
30
25
20
15
10
5
0
500
700
900
1100
1300
1500
500
700
900
1100
1300
1500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=600V)
Figure 24. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=600V)
Datasheet
11
Vꢀ2.3
2019-04-15
IKQ40N120CT2
TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
0
-20
160
140
120
100
80
Tvj = 25°C, IF = 40A
Tvj = 175°C, IF = 40A
Tvj = 25°C
Tvj = 175°C
-40
-60
-80
-100
-120
-140
-160
60
40
20
0
500
700
900
1100
1300
1500
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 25. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 26. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(VR=600V)
3.0
IF = 20A
IF = 40A
IF = 80A
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 27. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.3
2019-04-15
IKQ40N120CT2
TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
Package Drawing PG-TO247-3-46
MILLIMETERS
INCHES
DIM
MIN
4.90
2.31
1.90
1.16
1.96
1.96
MAX
5.10
2.51
2.10
1.26
2.25
2.06
MIN
MAX
0.201
0.099
0.083
0.050
0.089
0.081
A
0.193
0.091
0.075
0.046
0.077
0.077
DOCUMENT NO.
Z8B00174295
A1
A2
b
0
SCALE
b1
b2
5
0
5
c
D
0.59
0.66
21.10
16.85
1.35
0.023
0.823
0.640
0.041
0.023
0.618
0.516
0.053
0.026
0.831
0.663
0.053
0.031
0.626
0.531
0.061
7.5mm
20.90
16.25
1.05
D1
D2
D3
E
EUROPEAN PROJECTION
0.58
0.78
15.70
13.10
1.35
15.90
13.50
1.55
E1
E3
e
5.44 (BSC)
3
0.214 (BSC)
3
ISSUE DATE
13-08-2014
N
L
19.80
-
20.10
4.30
2.10
0.780
-
0.791
0.169
0.083
REVISION
L1
R
01
1.90
0.075
Datasheet
13
Vꢀ2.3
2019-04-15
IKQ40N120CT2
TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.3
2019-04-15
IKQ40N120CT2
TRENCHSTOPTMꢀ2ꢀlowꢀVce(sat)ꢀsecondꢀgenerationꢀIGBT
RevisionꢀHistory
IKQ40N120CT2
Revision:ꢀ2019-04-15,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2017-05-12 Final data sheet
2017-06-09 Update Figure 26
2.1
2.2
2.3
2019-04-15 Update condition for Vgeth page 4 and Fig. 11
Datasheet
15
Vꢀ2.3
2019-04-15
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