IKW08N120CS7 [INFINEON]
TRENCHSTOP™ IGBT7;
| 型号： | IKW08N120CS7 |
| 厂家： | 
Infineon |
| 描述： | TRENCHSTOP™ IGBT7 双极性晶体管 |
| 文件： | 总16页 (文件大小：1725K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology copacked with sof and fast recovery Emitter
Controlled 7 diode
Features
• VCE=1200 V
• IC=8 A
• IGBT co-packed with full current, sof and low Qrr diode
• Low saturation voltage VCE(sat) = 2.0 V at Tvj=175 °C
• Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...)
• Short circuit ruggedness 8 µsec
• Wide range of dv/dt controllability
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
Potential applications
• Industrial Drives
G
C
E
• Industrial Power Supplies
• Solar Inverters
Product validation
• Product Validation: Qualified for industrial applications according to the relevant tests of
JEDEC47/20/22
Description
C
G
Type
Package
Marking
IKW08N120CS7
PG-TO247-3
K08MCS7
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
1.00
2021-03-17
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
2
3
4
5
6
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
1.00
2021-03-17
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
13.0
Unit
Internal emitter inductance
measured 5mm. (0.197in)
from case
LE
nH
Storage temperature
Soldering temperature
Tstg
-55
150
260
°C
°C
wave soldering 1.6mm (0.063in.) from case
for 10s
Mounting torque , M3 screw
Maximum of mounting
process: 3
M
0.6
40
Nm
Thermal resistance,
junction-ambient
Rth(j-a)
K/W
2
IGBT
Table 2
Maximum rated values
Symbol Note or test condition
Parameter
Values
1200
21
Unit
Collector-emitter voltage
VCE
Tvj ≥ 25 °C
V
A
DC collector current, limited
by Tvjmax
IC
TC = 25 °C
TC = 100 °C
14
Pulsed collector current, tp
limited by Tvjmax
ICpuls
24
A
Turn-off safe operating area
VCE ≤ 1200 V, Tvj ≤ 175 °C
tp ≤ 0.5 µs, D < 0.001
24
20
25
A
V
V
Gate-emitter voltage
VGE
VGE
Transient gate-emitter
voltage
Short circuit withstand time
tSC
VCC ≤ 600 V, VGE = 15 V, Allowed number of
short circuits < 1000, Time between short
circuits ≥ 1.0 s, Tvj = 150 °C
8
µs
W
Power dissipation
Ptot
TC = 25 °C
106
53
TC = 100 °C
Table 3
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Collector-emitter saturation
voltage
VCE sat IC = 8.0 A, VGE = 15 V
Tvj = 25 °C
1.65
2.00
2.00
V
Tvj = 175 °C
Datasheet
3
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2021-03-17
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
2 IGBT
Table 3
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Gate-emitter threshold
voltage
VGEth
ICES
IC = 0.16 mA, VCE = VGE, Tvj = 25 °C
5.15
5.70
6.45
V
Zero gate voltage collector
current
VCE = 1200 V, VGE = 0 V
Tvj = 25 °C
Tvj = 175 °C
40
µA
750
Gate-emitter leakage current
Transconductance
IGES
gfs
VCE = 0 V, VGE = 20 V
100
nA
S
IC = 8.0 A, VCE = 20 V, Tvj = 175 °C
3.5
50
Short circuit collector
current
ISC
VCC ≤ 600 V, VGE = 15 V, tSC ≤ 8 µs, Allowed
number of short circuits < 1000 , Time
between short circuits ≥ 1.0 s, Tvj = 25 °C
A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Cies
Coes
Cres
QG
VCE = 25 V, VGE = 0 V, f = 100 kHz
VCE = 25 V, VGE = 0 V, f = 100 kHz
VCE = 25 V, VGE = 0 V, f = 100 kHz
IC = 8.0 A, VGE = 15 V, VCE = 960 V
1.2
33
nF
pF
pF
nC
ns
5.5
52
Turn-on delay time
tdon
VCE = 600 V, VGE = 15 V,
RGon = 20.0 Ω,
RGoff = 20.0 Ω
Tvj = 25 °C,
IC = 8.0 A
17
Tvj = 175 °C,
IC = 8.0 A
16
12
Rise time (inductive load)
Turn-off delay time
Fall time (inductive load)
Turn-on energy
tr
tdoff
tf
VCE = 600 V, VGE = 15 V,
RGon = 20.0 Ω,
RGoff = 20.0 Ω
Tvj = 25 °C,
IC = 8.0 A
ns
ns
Tvj = 175 °C,
IC = 8.0 A
15
VCE = 600 V, VGE = 15 V,
RGon = 20.0 Ω,
RGoff = 20.0 Ω
Tvj = 25 °C,
IC = 8.0 A
160
245
95
Tvj = 175 °C,
IC = 8.0 A
VCE = 600 V, VGE = 15 V,
RGon = 20.0 Ω,
RGoff = 20.0 Ω
Tvj = 25 °C,
IC = 8.0 A
ns
Tvj = 175 °C,
IC = 8.0 A
255
0.37
0.59
0.40
0.86
Eon
VCE = 600 V, VGE = 15 V,
RGon = 20.0 Ω,
RGoff = 20.0 Ω
Tvj = 25 °C,
IC = 8.0 A
mJ
mJ
Tvj = 175 °C,
IC = 8.0 A
Turn-off energy
Eoff
VCE = 600 V, VGE = 15 V,
RGon = 20.0 Ω,
RGoff = 20.0 Ω
Tvj = 25 °C,
IC = 8.0 A
Tvj = 175 °C,
IC = 8.0 A
Datasheet
4
1.00
2021-03-17
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
3 Diode
Table 3
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
0.77
Unit
Total switching energy
Ets
VCE = 600 V, VGE = 15 V,
RGon = 20.0 Ω,
RGoff = 20.0 Ω
Tvj = 25 °C,
IC = 8.0 A
mJ
Tvj = 175 °C,
IC = 8.0 A
1.45
IGBT thermal resistance,
junction-case
Rthjc
Tvj
1.05
1.42 K/W
Operating junction
temperature
-40
175
°C
3
Diode
Table 4
Maximum rated values
Symbol Note or test condition
VRRM Tvj ≥ 25 °C
Parameter
Values
Unit
Repetitive peak reverse
voltage
1200
V
Diode forward current,
limited by Tvjmax
IF
TC = 25 °C
18
12
24
A
TC = 100 °C
Diode pulsed current,
limited by Tvjmax
IFpuls
Ptot
A
Power dissipation
TC = 25 °C
62
31
W
TC = 100 °C
Table 5
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
V
Min. Typ. Max.
Diode forward voltage
VF
IR
IF = 8.0 A
Tvj = 25 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 175 °C
1.65
1.60
2.15
Reverse leakage current
Diode reverse recovery time
VR = 1200 V
40
µA
ns
750
130
trr
VR = 600 V, RGon = 20.0 Ω Tvj = 25 °C,
IF = 8.0 A
Tvj = 175 °C,
IF = 8.0 A
210
0.45
1.10
Diode reverse recovery
charge
Qrr
VR = 600 V, RGon = 20.0 Ω Tvj = 25 °C,
IF = 8.0 A
µC
Tvj = 175 °C,
IF = 8.0 A
Datasheet
5
1.00
2021-03-17
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
3 Diode
Table 5
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
9.0
Unit
Diode peak reverse recovery
current
Irrm
VR = 600 V, RGon = 20.0 Ω Tvj = 25 °C,
A
IF = 8.0 A
Tvj = 175 °C,
IF = 8.0 A
13.0
-110
-95
Diode peak rate off fall of
dIrr/dt VR = 600 V, RGon = 20.0 Ω Tvj = 25 °C,
IF = 8.0 A
A/µs
mJ
reverse recovery current
Tvj = 175 °C,
IF = 8.0 A
Reverse recovery energy
Erec
VR = 600 V, RGon = 20.0 Ω Tvj = 25 °C,
IF = 8.0 A
0.13
0.37
Tvj = 175 °C,
IF = 8.0 A
Diode thermal resistance,
junction-case
Rthjc
Tvj
1.80
2.40 K/W
175 °C
Operating junction
temperature
-40
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Dynamic test circuit, parasitic inductance L = 30 nH, C = 4 pF
σ
σ
Datasheet
6
1.00
2021-03-17
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Characteristics diagrams
4
Characteristics diagrams
Reverse bias safe operating area, IGBT
IC = f(VCE
Typical output characteristic, IGBT
IC = f(VCE
)
)
Tvj≤175 °C, VGE = 15 V
Tvj = 25 °C
100
24
22
20
18
16
14
12
10
8
10
1
6
4
2
0.1
1
0
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Typical output characteristic, IGBT
IC = f(VCE
Typical transfer characteristic, IGBT
IC = f(VGE
)
)
Tvj = 175 °C
VCE = 20 V
24
22
22
20
18
16
14
12
10
8
20
18
16
14
12
10
8
6
6
4
4
2
2
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
4
5
6
7
8
9
10
11
12
Datasheet
7
1.00
2021-03-17
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Characteristics diagrams
Typical collector-emitter saturation voltage as a
function of junction temperature, IGBT
VCEsat = f(Tvj)
Gate-emitter threshold voltage as a function of
junction temperature, IGBT
VGEth = f(Tvj)
VGE = 15 V
IC = 0.16 mA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
-50 -25
0
25
50
75 100 125 150 175
25
50
75
100
125
150
Typical switching times as a function of collector
current, IGBT
Typical switching times as a function of gate resistor,
IGBT
t = f(IC)
t = f(RG)
VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 20.0 Ω
IC = 8.0 A, VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V
1000
100
10
1000
100
10
1
1
0
2
4
6
8
10
12
14
16
0
50
100
150
200
250
Datasheet
8
1.00
2021-03-17
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Characteristics diagrams
Typical switching times as a function of junction
temperature, IGBT
t = f(Tvj)
Typical switching energy losses as a function of
collector current, IGBT
E = f(IC)
IC = 8.0 A, VCE = 600 V, VGE = 0/15 V, RG = 20.0 Ω
VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 20.0 Ω
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
Typical switching energy losses as a function of gate
resistor, IGBT
Typical switching energy losses as a function of
junction temperature, IGBT
E = f(RG)
E = f(Tvj)
IC = 8.0 A, VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V
IC = 8.0 A, VCE = 600 V, VGE = 0/15 V, RG = 20.0 Ω
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
50
75
100
125
150
175
0
25 50 75 100 125 150 175 200 225 250
Datasheet
9
1.00
2021-03-17
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Characteristics diagrams
Typical switching energy losses as a function of
collector emitter voltage, IGBT
Typical gate charge, IGBT
VGE = f(QGE
)
E = f(VCE
)
IC = 8.0 A
IC = 8.0 A, Tvj = 175 °C, VGE = 0/15 V, RG = 20.0 Ω
2.5
16
14
12
10
8
2.0
1.5
1.0
0.5
6
4
2
0.0
0
0
400 450 500 550 600 650 700 750 800
10
20
30
40
50
60
Typical capacitance as a function of collector-emitter Typical short circuit collector current as a function of
voltage, IGBT gate-emitter voltage, IGBT
C = f(VCE IC(SC) = f(VGE
)
)
f = 100 kHz, VGE = 0 V
Tvj = 150 °C, VCC = 600 V
10000
50
40
30
20
10
0
1000
100
10
1
0
5
10
15
20
25
30
12.0
12.5
13.0
13.5
14.0
14.5
15.0
Datasheet
10
1.00
2021-03-17
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Characteristics diagrams
Short circuit withstand time as a function of gate-
emitter voltage, IGBT
IGBT transient thermal impedance, IGBT
Zth = f(tp)
D = tp/T
tSC = f(VGE
)
Tvj≤150 °C, VCC = 600 V
14
10
1
12
10
8
0.1
0.01
6
4
2
0.001
0
12.0
1E-6
1E-5
0.0001 0.001
0.01
0.1
1
12.5
13.0
13.5
14.0
14.5
15.0
Diode transient thermal impedance as a function of
pulse width, Diode
Typical diode forward current as a function of forward
voltage, Diode
Zth = f(tp)
IF = f(VF)
D = tp/T
10
1
24
22
20
18
16
14
12
10
8
0.1
0.01
0.001
0.0001
6
4
2
0
1E-7 1E-6 1E-5 0.0001 0.001 0.01
0.1
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Datasheet
11
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2021-03-17
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Characteristics diagrams
Typical diode forward voltage as a function of
junction temperature, Diode
Typical diode current slope as a function of gate
resistor, Diode
VF = f(Tvj)
diF/dt = f(RG)
IC = 8.0 A, VCE = 600 V, VGE = 0/15 V
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
700
630
560
490
420
350
280
210
140
70
0
-50 -25
0
25
50
75 100 125 150 175
0
25 50 75 100 125 150 175 200 225 250
Typical reverse recovery time as a function of diode
current slope, Diode
Typical reverse recovery charge as a function of diode
current slope, Diode
trr = f(diF/dt)
Qrr = f(diF/dt)
VR = 600 V, IF = 8.0 A
VR = 600 V, IF = 8.0 A
700
630
560
490
420
350
280
210
140
70
1.50
1.25
1.00
0.75
0.50
0.25
0
0
100
200
300
400
500
600
700
0
100
200
300
400
500
600
700
Datasheet
12
1.00
2021-03-17
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
4 Characteristics diagrams
Typical reverse recovery current as a function of diode Typical diode peak rate of fall of reverse recovery
current slope, Diode
Irr = f(diF/dt)
current as a function of diode current slope, Diode
dIrr/dt = f(diF/dt)
VR = 600 V, IF = 8.0 A
VR = 600 V, IF = 8.0 A
14
12
10
8
0
-20
-40
-60
6
-80
4
-100
-120
2
0
0
100
200
300
400
500
600
700
0
100
200
300
400
500
600
700
Typical reverse energy losses as a function of diode
current slope, Diode
Erec = f(diF/dt)
VR = 600 V, IF = 8.0 A
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
100
200
300
400
500
600
700
Datasheet
13
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2021-03-17
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
5 Package outlines
5
Package outlines
Package Drawing PG-TO247-3
MILLIMETERS
MAX.
DIMENSIONS
MIN.
4.70
2.20
1.50
1.00
1.60
2.57
0.38
20.70
13.08
0.51
15.50
12.38
3.40
1.00
A
A1
A2
b
5.30
2.60
2.50
1.40
2.41
3.43
0.89
21.50
17.65
1.35
16.30
14.15
5.10
2.60
DOCUMENT NO.
Z8B00003327
b1
b2
c
REVISION
D
06
D1
D2
E
SCALE 3:1
0 1 2 3 4 5mm
E1
E2
E3
e
EUROPEAN PROJECTION
5.44
L
19.80
3.85
3.50
5.35
6.04
20.40
4.50
3.70
6.25
6.30
L1
P
ISSUE DATE
25.07.2018
Q
S
Figure 6
Datasheet
14
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2021-03-17
IKW08N120CS7
™
Short circuit rugged 1200 V TRENCHSTOP IGBT 7 technology
6 Testing conditions
6
Testing conditions
VGE(t)
I,V
90% VGE
t
rr = ta + tb
dIF/dt
Q
rr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
10% IC
90% IC
10% IC
Figure C. Definition of diode switching
t
characteristics
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
s
parasitic capacitor C ,
s
relief capacitor C ,
r
t2
t4
(only for ZVT switching)
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Figure 7
Datasheet
15
1.00
2021-03-17
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Edition 2021-03-17
Published by
Infineon Technologies AG
81726 Munich, Germany
IMPORTANT NOTICE
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
©
2021 Infineon Technologies AG
All Rights Reserved.
Except as otherwise explicitly approved by Infineon
Technologies in
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Document reference
IFX-
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
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