IKW40N120CH7 [INFINEON]
TRENCHSTOP™ IGBT7;
| 型号： | IKW40N120CH7 |
| 厂家： | 
Infineon |
| 描述： | TRENCHSTOP™ IGBT7 双极性晶体管 |
| 文件： | 总17页 (文件大小：1400K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology co-packed with full rated current, soft-ommuꢀaꢀing,
ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode
Features
• VCE = 1200 V
• IC = 40 A
• Maximum junction temperature Tvjmax = 175°C
• Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-ommuꢀaꢀing
high speed diode
• Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C
• Optimized for high effi-ien-y in high speed hard switching topologies (2-L inverter, 3-L NPC
T-type, ...)
• Easy paralleling capability due to positive temperature -oeffi-ienꢀ in VCEsat
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
Potential applications
• Industrial UPS
• EV-Charging
• String inverter
• Welding
Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Description
C
G
E
Type
Package
Marking
IKW40N120CH7
PG-TO247-3-STD-NN2.5
K40MCH7
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
2
3
4
5
6
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Datasheet
2
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
13
Unit
Min.
Max.
Internal emitter
inductance measured 5
mm (0.197 in.) from case
LE
nH
Storage temperature
Soldering temperature
Tstg
-55
150
260
°C
°C
Tsold
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
Mounting torque
M
M3 screw, Maximum of mounting process: 3
0.6
40
Nm
Thermal resistance,
junction-ambient
Rth(j-a)
K/W
IGBT thermal resistance,
junction-case
Rth(j-c)
Rth(j-c)
0.35
0.6
0.46
0.78
K/W
K/W
Diode thermal resistance,
junction-case
2
IGBT
Table 2
Maximum rated values
Symbol Note or test condition
Parameter
Values
1200
82
Unit
Collector-emitter voltage
VCE
Tvj ≥ 25 °C
V
A
DC collector current,
limited by Tvjmax
IC
limited by bondwire
Tc = 25 °C
Tc = 100 °C
67
Pulsed collector current, tp
limited by Tvjmax
ICpulse
160
A
A
Turntoff safe operating
area
VCC ≤ 800 V, VCE,peak < 1200 V, VGE = 0/15 V,
RGoff ≥ 10 Ω, Tvj ≤ 175 °C
160
Gate-emitter voltage
VGE
VGE
20
25
V
V
Transient gate-emitter
voltage
tp ≤ 0.5 µs, D < 0.001
Power dissipation
Ptot
Tc = 25 °C
330
165
W
Tc = 100 °C
Table 3
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.7
Unit
Min.
Max.
Collector-emitter
saturation voltage
VCEsat IC = 40 A, VGE = 15 V
Tvj = 25 °C
2.15
V
Tvj = 175 °C
2
(table continues...)
Datasheet
3
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
2 IGBT
Table 3
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
5.5
Unit
Min.
Max.
Gate-emitter threshold
voltage
VGEth
ICES
IC = 0.64 mA, VCE = VGE
VCE = 1200 V, VGE = 0 V
4.7
6.2
V
Zero gate-voltage collector
current
Tvj = 25 °C
40
µA
Tvj = 175 °C
2600
Gate-emitter leakage
current
IGES
VCE = 0 V, VGE = 20 V
IC = 40 A, VCE = 20 V
100
nA
Transconductance
Input capacitance
Output capacitance
gfs
Cies
Coes
Cres
79
5
S
VCE = 25 V, VGE = 0 V, f = 100 kHz
VCE = 25 V, VGE = 0 V, f = 100 kHz
VCE = 25 V, VGE = 0 V, f = 100 kHz
nF
pF
pF
108
29
Reverse transfer
capacitance
Gate charge
QG
IC = 40 A, VGE = 15 V, VCC = 960 V
290
36
nC
ns
Turn-on delay time
td(on)
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
RG(on) = 10 Ω,
RG(off) = 10 Ω
IC = 40 A
Tvj = 175 °C,
IC = 40 A
32
22
Rise time (inductive load)
Turntoff delay time
Fall time (inductive load)
Turn-on energy
tr
td(off)
tf
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
ns
ns
RG(on) = 10 Ω,
RG(off) = 10 Ω
IC = 40 A
Tvj = 175 °C,
IC = 40 A
21
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
336
420
45
RG(on) = 10 Ω,
RG(off) = 10 Ω
IC = 40 A
Tvj = 175 °C,
IC = 40 A
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
ns
RG(on) = 10 Ω,
RG(off) = 10 Ω
IC = 40 A
Tvj = 175 °C,
IC = 40 A
114
1.69
2.44
0.92
2.13
Eon
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
mJ
mJ
RG(on) = 10 Ω,
RG(off) = 10 Ω
IC = 40 A
Tvj = 175 °C,
IC = 40 A
Turntoff energy
Eoff
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
RG(on) = 10 Ω,
RG(off) = 10 Ω
IC = 40 A
Tvj = 175 °C,
IC = 40 A
(table continues...)
Datasheet
4
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
3 Diode
Table 3
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Total switching energy
Ets
VCC = 600 V, VGE = 0/15 V, Tvj = 25 °C,
2.61
mJ
RG(on) = 10 Ω,
RG(off) = 10 Ω
IC = 40 A
Tvj = 175 °C,
IC = 40 A
4.57
Operating junction
temperature
Tvj
-40
175
°C
Note:
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified.
3
Diode
Table 4
Maximum rated values
Parameter
Symbol Note or test condition
Values
66
Unit
Diode forward current,
limited by Tvjmax
IF
Tc = 25 °C
A
Tc = 100 °C
42
Diode pulsed current, tp
limited by Tvjmax
IFpulse
Ptot
160
A
Power dissipation
Tc = 25 °C
192
96
W
Tc = 100 °C
Table 5
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
2.5
Unit
V
Min.
Max.
Diode forward voltage
VF
IF = 40 A
Tvj = 25 °C
3
Tvj = 175 °C
2.3
Diode reverse recovery
time
trr
Qrr
Irrm
VR = 600 V, RG(on) = 10 Ω Tvj = 25 °C,
IF = 40 A
120
ns
Tvj = 175 °C,
IF = 40 A
185
1.27
3.25
27
Diode reverse recovery
charge
VR = 600 V, RG(on) = 10 Ω Tvj = 25 °C,
IF = 40 A
µC
A
Tvj = 175 °C,
IF = 40 A
Diode peak reverse
recovery current
VR = 600 V, RG(on) = 10 Ω Tvj = 25 °C,
IF = 40 A
Tvj = 175 °C,
IF = 40 A
43
(table continues...)
Datasheet
5
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
3 Diode
Table 5
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Diode peak rate of fall of
reverse recovery current
dirr/dt VR = 600 V, RG(on) = 10 Ω Tvj = 25 °C,
IF = 40 A
-348
A/µs
Tvj = 175 °C,
IF = 40 A
-405
0.37
1.09
Reverse recovery energy
Erec
VR = 600 V, RG(on) = 10 Ω Tvj = 25 °C,
IF = 40 A
mJ
°C
Tvj = 175 °C,
IF = 40 A
Operating junction
temperature
Tvj
-40
175
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Dynamic test circuit, parasitic inductance L = 30 nH, C = 18 pF
σ
σ
Datasheet
6
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
4 Characteristics diagrams
4
Characteristics diagrams
Reverse bias safe operating area
IC = f(VCE
Typical output characteristic
IC = f(VCE
)
)
Tvj ≤ 175 °C, VGE = 0/15 V
Tvj = 25 °C
1000
160
140
120
100
80
100
10
1
60
40
0.1
0.01
20
0
1
10
100
1000
0
1
2
3
4
5
Typical output characteristic
IC = f(VCE
Typical transfer characteristic
IC = f(VGE
)
)
Tvj = 175 °C
VCE = 20 V
160
160
140
120
100
80
140
120
100
80
60
60
40
40
20
20
0
0
0
1
2
3
4
5
4
5
6
7
8
9
10
Datasheet
7
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
4 Characteristics diagrams
Typical collector-emitter saturation voltage as a
function of junction temperature
Gate-emitter threshold voltage as a function of
junction temperature
VCEsat = f(Tvj)
VGEth = f(Tvj)
VGE = 15 V
IC = 0.64 mA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
9
8
7
6
5
4
3
2
1
25
50
75
100
125
150
175
0
25
50
75
100
125
150
Typical switching times as a function of collector
current
t = f(IC)
Typical switching times as a function of gate resistor
t = f(RG)
IC = 40 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V
VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω
10000
1000
100
10
10000
1000
100
1
10
0
10
20
30
40
50
60
70
80
5
10 15 20 25 30 35 40 45 50
Datasheet
8
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
4 Characteristics diagrams
Typical switching times as a function of junction
temperature
Typical switching energy losses as a function of
collector current
t = f(Tvj)
E = f(IC)
IC = 40 A, VCC = 600 V, VGE = 0/15 V, RG = 10 Ω
VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω
10000
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
1
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
Typical switching energy losses as a function of gate
resistor
Typical switching energy losses as a function of
junction temperature
E = f(RG)
E = f(Tvj)
IC = 40 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V
IC = 40 A, VCC = 600 V, VGE = 0/15 V, RG = 10 Ω
7
6
5
4
3
2
1
0
5
4
3
2
1
0
25
50
75
100
125
150
175
5
10
15
20
25
30
35
40
45
50
Datasheet
9
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
4 Characteristics diagrams
Typical switching energy losses as a function of
Typical gate charge
VGE = f(QG)
IC = 40 A
collector emitter voltage
E = f(VCE
)
IC = 40 A, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω
7
16
14
12
10
8
6
5
4
3
2
1
6
4
2
0
0
400 450 500 550 600 650 700 750 800
0
40
80
120 160 200 240 280 320
Typical capacitance as a function of collector-emitter IGBT transient thermal impedance as a function of
voltage
C = f(VCE
f = 100 kHz, VGE = 0 V
pulse width
Zth(j-c) = f(tp)
D = tp/T
)
10000
1
0.1
1000
100
10
0.01
0.001
0.0001
1
1E-6
1E-5 0.0001 0.001
0.01
0.1
1
0
5
10
15
20
25
30
Datasheet
10
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
4 Characteristics diagrams
Diode transient thermal impedance as a function of
pulse width
Typical diode forward current as a function of forward
voltage
Zth(j-c) = f(tp)
IF = f(VF)
D = tp/T
1
0.1
160
140
120
100
80
0.01
60
0.001
40
20
0.0001
0
1E-6
1E-5 0.0001 0.001
0.01
0.1
1
0
1
2
3
4
5
Typical diode forward voltage as a function of
junction temperature
Typical diode current slope as a function of gate
resistor
VF = f(Tvj)
diF/dt = f(RG)
VR = 600 V, IF = 40 A
5
1800
1600
1400
1200
1000
800
4
3
2
1
0
600
25
50
75
100
125
150
175
0
10
20
30
40
50
Datasheet
11
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
4 Characteristics diagrams
Typical reverse recovery time as a function of diode
current slope
Typical reverse recovery charge as a function of diode
current slope
trr = f(diF/dt)
Qrr = f(diF/dt)
VR = 600 V, IF = 40 A
VR = 600 V, IF = 40 A
250
225
200
175
150
125
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
600
800
1000
1200
1400
1600
1800
600
800
1000
1200
1400
1600
1800
Typical reverse recovery current as a function of diode Typical diode peak rate of fall of reverse recovery
current slope
Irrm = f(diF/dt)
current as a function of diode current slope
dirr/dt = f(diF/dt)
VR = 600 V, IF = 40 A
VR = 600 V, IF = 40 A
50
45
40
35
30
25
20
15
10
-100
-150
-200
-250
-300
-350
-400
-450
600
800
1000
1200
1400
1600
1800
600
800
1000
1200
1400
1600
1800
Datasheet
12
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
4 Characteristics diagrams
Typical reverse energy losses as a function of diode
current slope
Erec = f(diF/dt)
VR = 600 V, IF = 40 A
1.50
1.25
1.00
0.75
0.50
0.25
0.00
600
800
1000
1200
1400
1600
1800
Datasheet
13
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
5 Package outlines
5
Package outlines
PG-TO247-3-STD-NN2.5
PACKAGE - GROUP
NUMBER:
PG-TO247-3-U06
MILLIMETERS
DIMENSIONS
MIN.
4.83
2.27
1.85
1.07
1.90
2.87
0.55
20.80
16.25
0.95
15.70
13.10
3.68
1.00
MAX.
5.21
2.54
2.16
1.33
2.41
3.38
0.68
21.10
17.65
1.35
16.13
14.15
5.10
2.60
A
A1
A2
b
b1
b2
c
D
D1
D2
E
E1
E2
E3
e
5.44
3
N
L
19.80
4.10
3.50
5.49
6.04
20.32
4.47
3.70
6.00
6.30
L1
øP
Q
S
Figure 1
Datasheet
14
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
6 Testing conditions
6
Testing conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCC
t1
t3
t
t1
t2
t3
t4
Figure B.
Figure 2
Datasheet
15
Revision 1.10
2022-11-25
IKW40N120CH7
™
High speed 1200 V TRENCHSTOP IGBT 7 Technology
Revision history
Revision history
Document revision
Date of release Description of changes
0.10
0.20
1.00
1.10
2022-05-02
2022-05-31
2022-11-02
2022-11-25
Target datasheet
Editorial changes
Final datasheet
Update of potential applications
Datasheet
16
Revision 1.10
2022-11-25
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-11-25
Published by
Infineon Technologies AG
81726 Munich, Germany
Important notice
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Bes-haffenheiꢀsgaranꢀie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
Warnings
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies offi-e.
©
2022 Infineon Technologies AG
All Rights Reserved.
Except as otherwise explicitly approved by Infineon
Technologies in
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aspect of this document?
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