IKW50N65ES5XKSA1 [INFINEON]
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247,;
| 型号： | IKW50N65ES5XKSA1 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247, 栅 |
| 文件： | 总16页 (文件大小：1928K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
TRENCHSTOPTMꢀ5ꢀhighꢀSpeedꢀsoftꢀswitchingꢀIGBTꢀwithꢀfullꢀcurrentꢀratedꢀRAPIDꢀ1ꢀdiode
IKW50N65ES5
650VꢀTRENCHSTOPTMꢀ5ꢀhighꢀspeedꢀsoftꢀswitchingꢀduopak
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
TRENCHSTOPTMꢀ5ꢀhighꢀspeedꢀsoftꢀswitchingꢀIGBTꢀcopackedꢀwithꢀfullꢀcurrent
ratedꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode
ꢀ
C
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀS5ꢀtechnologyꢀoffering
•ꢀHighꢀspeedꢀsmoothꢀswitchingꢀdeviceꢀforꢀhardꢀ&ꢀsoftꢀswitching
•ꢀVeryꢀLowꢀVCEsat,ꢀ1.35Vꢀatꢀnominalꢀcurrent
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs
•ꢀ650Vꢀbreakdownꢀvoltage
G
E
•ꢀLowꢀgateꢀchargeꢀQG
•ꢀIGBTꢀcopackedꢀwithꢀfullꢀratedꢀRAPIDꢀ1ꢀfastꢀantiparallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications:
•ꢀResonantꢀconverters
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀWeldingꢀconverters
•ꢀMidꢀtoꢀhighꢀrangeꢀswitchingꢀfrequencyꢀconverters
1
Packageꢀpinꢀdefinition:
2
•ꢀPinꢀ1ꢀ-ꢀgate
•ꢀPinꢀ2ꢀ&ꢀbacksideꢀ-ꢀcollector
•ꢀPinꢀ3ꢀ-ꢀemitter
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.35V 175°C
Marking
Package
IKW50N65ES5
650V
50A
K50EES5
PG-TO247-3
2
Rev.ꢀ2.3,ꢀꢀ2015-11-18
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.ꢀ2.3,ꢀꢀ2015-11-18
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ100°C
IC
80.0
60.5
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
200.0
200.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ100°C
IF
80.0
60.5
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
200.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
274.0
137.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
0.55
0.63
40
K/W
K/W
K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
4
Rev.ꢀ2.3,ꢀꢀ2015-11-18
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ50.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ125°C
650
-
-
V
V
-
-
-
1.35 1.70
1.50
1.60
-
-
Tvjꢀ=ꢀ175°C
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ50.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.45 1.70
Diode forward voltage
VF
V
1.42
1.39
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.50mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
V
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
50
-
µA
2000
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ50.0A
-
-
-
100
-
nA
S
62.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
3100
88
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
12
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
120.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
20
27
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ8.2Ω,ꢀRG(off)ꢀ=ꢀ8.2Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
127
34
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.23
0.55
1.78
mJ
mJ
mJ
Turn-off energy
Total switching energy
5
Rev.ꢀ2.3,ꢀꢀ2015-11-18
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
18
9
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ25.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ8.2Ω,ꢀRG(off)ꢀ=ꢀ8.2Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
141
22
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.50
0.25
0.75
mJ
mJ
mJ
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
70
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ50.0A,
diF/dtꢀ=ꢀ1150A/µs
Qrr
1.25
25.0
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-2120
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
58
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ25.0A,
diF/dtꢀ=ꢀ1370A/µs
Qrr
0.86
22.5
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-2125
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
19
26
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ8.2Ω,ꢀRG(off)ꢀ=ꢀ8.2Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
151
47
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.63
0.85
2.48
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
18
10
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ25.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ8.2Ω,ꢀRG(off)ꢀ=ꢀ8.2Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
180
46
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.79
0.45
1.24
mJ
mJ
mJ
6
Rev.ꢀ2.3,ꢀꢀ2015-11-18
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
115
2.80
38.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ50.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1150A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1550
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
92
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ25.0A,
Qrr
2.10
35.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1370A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-2010
-
A/µs
7
Rev.ꢀ2.3,ꢀꢀ2015-11-18
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
275
250
225
200
175
150
125
100
75
90
80
70
60
50
40
30
20
10
0
50
25
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tvj≤175°C)
(VGE≥15V,ꢀTvj≤175°C)
150
150
VGE = 20V
VGE = 20V
135
135
18V
18V
15V
15V
120
120
12V
12V
105
105
10V
10V
90
75
60
45
30
15
0
8V
7V
6V
5V
90
75
60
45
30
15
0
8V
7V
6V
5V
0
1
2
3
4
5
0
1
2
3
4
5
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
8
Rev.ꢀ2.3,ꢀꢀ2015-11-18
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
150
135
120
105
90
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tvj = 25°C
Tvj = 150°C
IC = 25A
IC = 50A
IC = 100A
75
60
45
30
15
0
2
3
4
5
6
7
8
9
10
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
1000
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
100
10
1
0
25
50
75
100
125
150
0
10
20
30
40
50
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistance
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRGon=8.2Ω,ꢀRGoff=8.2Ω,ꢀdynamic
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=50A,ꢀdynamicꢀtestꢀcircuitꢀin
test circuit in Figure E)
Figure E)
9
Rev.ꢀ2.3,ꢀꢀ2015-11-18
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
1000
100
10
6
5
4
3
2
1
0
td(off)
tf
td(on)
tr
typ.
min.
max.
1
25
50
75
100
125
150
175
25
50
75
100
125
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
(IC=0.5mA)
IC=50A,ꢀRGon=8.2Ω,ꢀRGoff=8.2Ω,ꢀdynamicꢀtest
circuit in Figure E)
14
12
10
8
5
Eoff
Eon
Ets
Eoff
Eon
Ets
4
3
2
1
0
6
4
2
0
0
25
50
75
100
125
150
0
10
20
30
40
50
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRGon=8.2Ω,ꢀRGoff=8.2Ω,ꢀdynamic
test circuit in Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=50A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
10
Rev.ꢀ2.3,ꢀꢀ2015-11-18
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
25
50
75
100
125
150
175
200
250
300
350
400
450
500
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,
IC=50A,ꢀRGon=8.2Ω,ꢀRGoff=8.2Ω,ꢀdynamicꢀtest
circuit in Figure E)
IC=50A,ꢀRGon=8.2Ω,ꢀRGoff=8.2Ω,ꢀdynamicꢀtest
circuit in Figure E)
16
14
12
10
8
VCCꢀ=ꢀ130V
VCCꢀ=ꢀ520V
Cies
Coes
Cres
1E+4
1000
100
10
6
4
2
0
1
0
20
40
60
80
100
120
0
5
10
15
20
25
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=50A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
11
Rev.ꢀ2.3,ꢀꢀ2015-11-18
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
1
1
D = 0.5
0.2
D = 0.5
0.2
0.1
0.1
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
i:
ri[K/W]: 0.030556 0.137971 0.162007 0.15972 0.059746
τi[s]: 2.4E-5 3.1E-4 3.1E-3 0.024936 0.134448
1
2
3
4
5
i:
1
2
3
4
ri[K/W]: 0.066623 0.198269 0.201696 0.163411
τi[s]: 2.1E-5 3.7E-4 5.5E-3 0.057467
0.001
0.001
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
180
3.5
Tvj = 25°C, IF = 50A
Tvj = 150°C, IF = 50A
Tvj = 25°C, IF = 50A
Tvj = 150°C, IF = 50A
160
3.0
2.5
2.0
1.5
1.0
0.5
0.0
140
120
100
80
60
40
20
0
700
800
900
1000
1100
1200
1300
700
800
900
1000
1100
1200
1300
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
12
Rev.ꢀ2.3,ꢀꢀ2015-11-18
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
50
40
30
20
10
0
-500
-750
Tvj = 25°C, IF = 50A
Tvj = 150°C, IF = 50A
Tvj = 25°C, IF = 50A
Tvj = 150°C, IF = 50A
-1000
-1250
-1500
-1750
-2000
-2250
-2500
-2750
-3000
700
800
900
1000
1100
1200
1300
700
850
1000
1150
1300
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
150
2.50
Tvj = 25°C
Tvj = 150°C
IF = 25A
IF = 50A
135
IF = 100A
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
120
105
90
75
60
45
30
15
0
0.0
0.5
1.0
1.5
2.0
2.5
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
13
Rev.ꢀ2.3,ꢀꢀ2015-11-18
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
Package Drawing PG-TO247-3
14
Rev.ꢀ2.3,ꢀꢀ2015-11-18
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
15
Rev.ꢀ2.3,ꢀꢀ2015-11-18
IKW50N65ES5
TRENCHSTOPTMꢀ5ꢀsoftꢀswitchingꢀIGBT
RevisionꢀHistory
IKW50N65ES5
Revision:ꢀ2015-11-18,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2015-08-12 Preliminary data sheet
2015-09-22 Final data sheet
1.1
2.1
2.2
2.3
2015-10-16 Minor change Ic(VCE) Fig. 3 and Fig. 4
2015-11-18 Max rating IFpuls corrected
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀInfineonꢀTechnologiesꢀAGꢀ2015.
AllꢀRightsꢀReserved.
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(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany
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16
Rev.ꢀ2.3,ꢀꢀ2015-11-18
相关型号：
IKW50N65H5AXKSA1
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247,
INFINEON
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