IKW75N65SS5 [INFINEON]
IGBT TRENCHSTOP™ 5;Silicon Carbide Schottky Diode;
| 型号： | IKW75N65SS5 |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 5;Silicon Carbide Schottky Diode 双极性晶体管 |
| 文件： | 总16页 (文件大小：1457K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKW75N65SS5
™
CoolSiC Hybrid Discrete
™
™
™
CoolSiC Hybrid Discrete - TRENCHSTOP 5 S5 IGBT co-packed with full-rated 6th generation CoolSiC diode
Features
• VCE = 650 V
• IC = 75 A
• Ultra-low switching losses due to the combination of TRENCHSTOPTM 5 and CoolSiCTM
technology
• Very low on-state losses
• Benchmark efficiency in hard switching topologies
• Plug-and-play replacement of pure silicon devices
• Maximum junction temperature Tvjmax = 175°C
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
Potential applications
• Industrial SMPS
• Industrial UPS
• Solar string inverter
• Energy storage
• Charger
Product validation
• Qualified for applications listed above based on the test conditions in the relevant tests of
JEDEC20/22
Description
Package pin definition:
• Pin G - gate
• Pin C & backside - collector
• Pin E - emitter
C
G
E
Type
Package
Marking
IKW75N65SS5
PG-TO247-3
K75ESS5
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10
2022-09-22
IKW75N65SS5
™
CoolSiC Hybrid Discrete
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
1
2
3
4
5
6
Datasheet
2
Revision 1.10
2022-09-22
IKW75N65SS5
™
CoolSiC Hybrid Discrete
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Internal emitter
LE
13.0
nH
inductance measured 5
mm (0.197 in.) from case
Storage temperature
Soldering temperature
Tstg
-55
150
260
°C
°C
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
Mounting torque
M
M3 screw Maximum of mounting process: 3
0.6
40
Nm
Thermal resistance,
junction-ambient
Rth(j-a)
K/W
2
IGBT
Table 2
Maximum rated values
Symbol Note or test condition
Parameter
Values
650
80
Unit
Collector-emitter voltage
VCE
Tvj ≥ 25 °C
V
A
DC collector current,
limited by Tvjmax
IC
limited by bondwire
Tc = 25 °C
Tc = 100 °C
80
Pulsed collector current, tp
limited by Tvjmax
ICpulse
300
A
A
Turn-off safe operating
area
VCE ≤ 650 V, tp = 1 µs, Tvj ≤ 175 °C
tp ≤ 10 µs, D < 0.01
300
Gate-emitter voltage
VGE
VGE
20
30
V
V
Transient gate-emitter
voltage
Power dissipation
Ptot
Tc = 25 °C
395
197
W
Tc = 100 °C
Table 3
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.35
1.55
1.65
4
Unit
Min.
Max.
Collector-emitter
saturation voltage
VCEsat IC = 75 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.7
V
Gate-emitter threshold
voltage
VGEth
IC = 0.75 mA, VCE = VGE
3.2
4.8
V
(table continues...)
Datasheet
3
Revision 1.10
2022-09-22
IKW75N65SS5
™
CoolSiC Hybrid Discrete
2 IGBT
Table 3
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Zero gate-voltage collector
current
ICES
VCE = 650 V, VGE = 0 V
Tvj = 25 °C
Tvj = 175 °C
Tvj = 25 °C
1900
µA
3000
Zero gate-voltage collector
current
ICES
IGES
VCE = 480 V, VGE = 0 V
VCE = 0 V, VGE = 20 V
IC = 75 A, VCE = 20 V
50
µA
nA
Gate-emitter leakage
current
100
Transconductance
Input capacitance
Output capacitance
gfs
Cies
Coes
Cres
100
4000
785
15
S
VCE = 25 V, VGE = 0 V, f = 250 kHz
VCE = 25 V, VGE = 0 V, f = 250 kHz
VCE = 25 V, VGE = 0 V, f = 250 kHz
pF
pF
pF
Reverse transfer
capacitance
Gate charge
QG
IC = 75 A, VGE = 15 V, VCC = 520 V
164
22
nC
ns
Turn-on delay time
td(on)
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C,
RGon = 5.6 Ω,
IC = 75 A
RGoff = 5.6 Ω, Lσ = 30 nH,
Cσ = 30 pF
Tvj = 25 °C,
IC = 37.5 A
21
22
Tvj = 150 °C,
IC = 75 A
Tvj = 150 °C,
IC = 37.5 A
20
Rise time (inductive load)
tr
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C,
13
ns
RGon = 5.6 Ω,
IC = 75 A
RGoff = 5.6 Ω, Lσ = 30 nH,
Cσ = 30 pF
Tvj = 25 °C,
IC = 37.5 A
8
Tvj = 150 °C,
IC = 75 A
15
Tvj = 150 °C,
IC = 37.5 A
8
Turn-off delay time
td(off)
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C,
145
155
168
195
ns
RGon = 5.6 Ω,
IC = 75 A
RGoff = 5.6 Ω, Lσ = 30 nH,
Cσ = 30 pF
Tvj = 25 °C,
IC = 37.5 A
Tvj = 150 °C,
IC = 75 A
Tvj = 150 °C,
IC = 37.5 A
(table continues...)
Datasheet
4
Revision 1.10
2022-09-22
IKW75N65SS5
™
CoolSiC Hybrid Discrete
2 IGBT
Table 3
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
21
Unit
Min.
Max.
Fall time (inductive load)
tf
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C,
ns
RGon = 5.6 Ω,
IC = 75 A
RGoff = 5.6 Ω, Lσ = 30 nH,
Cσ = 30 pF
Tvj = 25 °C,
IC = 37.5 A
26
24
Tvj = 150 °C,
IC = 75 A
Tvj = 150 °C,
IC = 37.5 A
33
Turn-on energy
Eon
Eoff
Ets
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C,
0.45
0.2
mJ
mJ
mJ
RGon = 5.6 Ω,
IC = 75 A
RGoff = 5.6 Ω, Lσ = 30 nH,
Cσ = 30 pF
Tvj = 25 °C,
IC = 37.5 A
Tvj = 150 °C,
IC = 75 A
0.57
0.25
0.75
0.42
1.24
0.75
1.2
Tvj = 150 °C,
IC = 37.5 A
Turn-off energy
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C,
RGon = 5.6 Ω,
IC = 75 A
RGoff = 5.6 Ω, Lσ = 30 nH,
Cσ = 30 pF
Tvj = 25 °C,
IC = 37.5 A
Tvj = 150 °C,
IC = 75 A
Tvj = 150 °C,
IC = 37.5 A
Total switching energy
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C,
RGon = 5.6 Ω,
IC = 75 A
RGoff = 5.6 Ω, Lσ = 30 nH,
Cσ = 30 pF
Tvj = 25 °C,
IC = 37.5 A
0.62
1.81
1
Tvj = 150 °C,
IC = 75 A
Tvj = 150 °C,
IC = 37.5 A
IGBT thermal resistance,
junction-case
Rth(j-c)
Tvj
0.38
175
K/W
°C
Operating junction
temperature
-40
Datasheet
5
Revision 1.10
2022-09-22
IKW75N65SS5
™
CoolSiC Hybrid Discrete
3 Diode
3
Diode
Table 4
Maximum rated values
Symbol Note or test condition
Parameter
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj ≥ 25 °C
650
V
Diode forward current,
limited by Tvjmax
IF
limited by bondwire
Tc = 25 °C
80
57
A
A
Tc = 100 °C
Diode pulsed current, tp
IFpulse
225
1)
limited by Tvjmax
1)
Pulse current level depends on Tvj of diode chip, see also Fig. "Maximum pulse current as a function of junction temperature"
Table 5
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.35
Unit
Min.
Max.
Diode forward voltage
VF
IF = 60 A
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.5
V
1.55
1.65
Diode thermal resistance,
junction-case
Rth(j-c)
Tvj
0.68
175
K/W
°C
Operating junction
temperature
-40
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Electrical Characteristic at Tvj = 25°C, unless otherwise specified.
Dynamic test circuit, parasitic inductance Lσ, parasitic capacitor Cσ from Fig. E. Energy losses include “tail”
and diode reverse recovery.
Datasheet
6
Revision 1.10
2022-09-22
IKW75N65SS5
™
CoolSiC Hybrid Discrete
4 Characteristics diagrams
4
Characteristics diagrams
Power dissipation as a function of case temperature
Collector current as a function of case temperature
Ptot = f(Tc)
IC = f(Tc)
Tvj ≤ 175 °C
Tvj ≤ 175 °C, VGE ≥ 15 V
400
350
300
250
200
150
100
50
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Typical output characteristic
IC = f(VCE
Typical output characteristic
IC = f(VCE
)
)
Tvj = 25 °C
Tvj = 150 °C
300
300
270
240
210
180
150
120
90
270
240
210
180
150
120
90
60
60
30
30
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Datasheet
7
Revision 1.10
2022-09-22
IKW75N65SS5
™
CoolSiC Hybrid Discrete
4 Characteristics diagrams
Typical transfer characteristic
Typical collector-emitter saturation voltage as a
function of junction temperature
VCEsat = f(Tvj)
IC = f(VGE
)
VCE = 20 V
VGE = 15 V
300
270
240
210
180
150
120
90
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
60
30
0
25
50
75
100
125
150
175
2.5
3.5
4.5
5.5
6.5
7.5
8.5
9.5
Typical switching times as a function of collector
current
t = f(IC)
Typical switching times as a function of gate resistor
t = f(RG)
IC = 75 A, VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V
VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 5.6 Ω
1000
100
10
1000
100
10
1
1
0
25
50
75 100 125 150 175 200 225
0
10
20
30
40
50
Datasheet
8
Revision 1.10
2022-09-22
IKW75N65SS5
™
CoolSiC Hybrid Discrete
4 Characteristics diagrams
Typical switching times as a function of junction
temperature
Gate-emitter threshold voltage as a function of
junction temperature
t = f(Tvj)
VGEth = f(Tvj)
IC = 75 A, VCC = 400 V, VGE = 0/15 V, RG = 5.6 Ω
IC = 0.75 mA
1000
100
10
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1
25
50
75
100
125
150
175
25
50
75
100
125
150
Typical switching energy losses as a function of
collector current
Typical switching energy losses as a function of gate
resistor
E = f(IC)
E = f(RG)
VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 5.6 Ω
IC = 75 A, VCC = 400 V, Tvj = 150 °C, VGE = 0/15 V
8
7
6
5
4
3
2
1
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75 100 125 150 175 200 225
0
10
20
30
40
50
Datasheet
9
Revision 1.10
2022-09-22
IKW75N65SS5
™
CoolSiC Hybrid Discrete
4 Characteristics diagrams
Typical switching energy losses as a function of
junction temperature
Typical switching energy losses as a function of
collector emitter voltage
E = f(Tvj)
E = f(VCE)
IC = 75 A, VCC = 400 V, VGE = 0/15 V, RG = 5.6 Ω
IC = 75 A, Tvj = 150 °C, VGE = 0/15 V, RG = 5.6 Ω
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
50
75
100
125
150
175
200
250
300
350
400
450
500
Typ. reverse current vs. reverse voltage as a function Typical gate charge
of Tvj
ICES = f(VCE
VGE = f(QG)
IC = 75 A
)
0.1
16
14
12
10
8
0.01
0.001
0.0001
1E-5
6
1E-6
4
1E-7
2
1E-8
0
0
100
200
300
400
500
600
700
20
40
60
80 100 120 140 160 180
Datasheet
10
Revision 1.10
2022-09-22
IKW75N65SS5
™
CoolSiC Hybrid Discrete
4 Characteristics diagrams
Typical capacitance as a function of collector-emitter IGBT transient thermal impedance as a function of
voltage
C = f(VCE
f = 250 kHz, VGE = 0 V
pulse width
Zth(j-c) = f(tp)
D = tp/T
)
10000
1
0.1
1000
100
10
0.01
0.001
0.0001
1
1E-7 1E-6 1E-5 0.0001 0.001 0.01
0.1
1
0
5
10
15
20
25
30
Diode transient thermal impedance as a function of
pulse width
Maximum pulse current as a function of junction
temperature
Zth(j-c) = f(tp)
IFpulse = f(Tvj)
D = tp/T
1
350
300
250
200
150
100
50
0.1
0.01
0.001
0
1E-6
1E-5
0.0001 0.001
0.01
0.1
1
25
50
75
100
125
150
175
Datasheet
11
Revision 1.10
2022-09-22
IKW75N65SS5
™
CoolSiC Hybrid Discrete
4 Characteristics diagrams
Typical diode forward current as a function of forward Typical diode forward voltage as a function of
voltage
junction temperature
IF = f(VF)
VF = f(Tvj)
225
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
200
175
150
125
100
75
50
25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Datasheet
12
Revision 1.10
2022-09-22
IKW75N65SS5
™
CoolSiC Hybrid Discrete
5 Package outlines
5
Package outlines
Package Drawing PG-TO247-3
MILLIMETERS
MAX.
DIMENSIONS
MIN.
4.70
2.20
1.50
1.00
1.60
2.57
0.38
20.70
13.08
0.51
15.50
12.38
3.40
1.00
A
A1
A2
b
5.30
2.60
2.50
1.40
2.41
3.43
0.89
21.50
17.65
1.35
16.30
14.15
5.10
2.60
DOCUMENT NO.
Z8B00003327
b1
b2
c
REVISION
D
06
D1
D2
E
SCALE 3:1
0 1 2 3 4 5mm
E1
E2
E3
e
EUROPEAN PROJECTION
5.44
L
19.80
3.85
3.50
5.35
6.04
20.40
4.50
3.70
6.25
6.30
L1
P
ISSUE DATE
25.07.2018
Q
S
Figure 1
Datasheet
13
Revision 1.10
2022-09-22
IKW75N65SS5
™
CoolSiC Hybrid Discrete
6 Testing conditions
6
Testing conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCC
t1
t3
t
t1
t2
t3
t4
Figure B.
Figure 2
Datasheet
14
Revision 1.10
2022-09-22
IKW75N65SS5
™
CoolSiC Hybrid Discrete
Revision history
Revision history
Document revision
Date of release Description of changes
V1.1
V2.1
n/a
2020-03-20
2020-07-27
2020-11-30
Preliminary Data Sheet
Final Data Sheet
Datasheet migrated to a new system with a new layout and new revision
number schema: target or preliminary datasheet = 0.xy; final datasheet =
1.xy
™
1.10
2022-09-22
Rename of product family name from “Hybrid CoolSiC IGBT” to
™
“CoolSiC hybrid discrete”
Datasheet
15
Revision 1.10
2022-09-22
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-09-22
Published by
Infineon Technologies AG
81726 Munich, Germany
Important notice
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
Warnings
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
©
2022 Infineon Technologies AG
All Rights Reserved.
Except as otherwise explicitly approved by Infineon
Technologies in
a written document signed by
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
Document reference
IFX-AAL363-003
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
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