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IKZ75N65EL5 [INFINEON]

IGBT TRENCHSTOP™ 5;
IKZ75N65EL5
型号： IKZ75N65EL5
厂家： Infineon    Infineon
描述：

IGBT TRENCHSTOP™ 5

双极性晶体管
文件： 总17页 (文件大小：1834K)
中文：  中文翻译
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IGBT  
LowꢀVCE(sat)ꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1  
fastꢀandꢀsoftꢀantiparallelꢀdiode  
IKZ75N65EL5  
650VꢀDuoPackꢀIGBTꢀandꢀdiode  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
Dataꢀsheet  
IndustrialꢀPowerꢀControl  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
LowꢀVCE(sat)ꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1  
fastꢀandꢀsoftꢀantiparallelꢀdiode  
ꢀ
FeaturesꢀandꢀBenefits:  
LowꢀVCE(sat)ꢀL5ꢀtechnologyꢀoffering  
•ꢀVeryꢀlowꢀcollector-emitterꢀsaturationꢀvoltageꢀVCEsat  
•ꢀBest-in-Classꢀtradeoffꢀbetweenꢀconductionꢀandꢀswitchingꢀlosses  
•ꢀ650Vꢀbreakdownꢀvoltage  
•ꢀLowꢀgateꢀchargeꢀQG  
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications  
•ꢀPb-freeꢀleadꢀplating  
•ꢀRoHSꢀcompliant  
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀmodels:  
http://www.infineon.com/igbt/  
Applications:  
•ꢀUninterruptibleꢀpowerꢀsupplies  
•ꢀSolarꢀphotovoltaicꢀinverters  
•ꢀWeldingꢀmachines  
Packageꢀpinꢀdefinition:  
•ꢀPinꢀCꢀ&ꢀbacksideꢀ-ꢀcollector  
•ꢀPinꢀEꢀ-ꢀemitter  
•ꢀPinꢀKꢀ-ꢀKelvinꢀemitter  
•ꢀPinꢀGꢀ-ꢀgate  
Pleaseꢀnote:ꢀTheꢀemitterꢀandꢀKelvinꢀemitterꢀpinsꢀareꢀnot  
exchangeable.ꢀTheirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.  
KeyꢀPerformanceꢀandꢀPackageꢀParameters  
Type  
VCE  
IC  
VCEsat,ꢀTvj=25°C Tvjmax  
1.1V 175°C  
Marking  
Package  
IKZ75N65EL5  
650V  
75A  
K75EEL5  
PG-TO247-4  
Datasheet  
www.infineon.com  
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument  
Vꢀ2.3  
2020-10-07  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17  
Datasheet  
3
Vꢀ2.3  
2020-10-07  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
MaximumꢀRatings  
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.  
Parameter  
Symbol  
Value  
Unit  
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C  
VCE  
650  
V
1)  
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
Tcꢀ=ꢀ25°C  
IC  
100.0  
100.0  
A
Tcꢀ=ꢀ100°C  
2)  
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
ICpuls  
300.0  
300.0  
A
A
Turn off safe operating area  
-
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs2)  
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
Tcꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire  
Tcꢀ=ꢀ100°C  
IF  
90.0  
89.0  
A
2)  
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
IFpuls  
VGE  
300.0  
A
V
Gate-emitter voltage  
±20  
±30  
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)  
PowerꢀdissipationꢀTcꢀ=ꢀ25°C  
PowerꢀdissipationꢀTcꢀ=ꢀ100°C  
536.0  
268.0  
Ptot  
W
Operating junction temperature  
Tvj  
-40...+175  
-55...+150  
°C  
°C  
Storage temperature  
Tstg  
Soldering temperature,3)  
wave soldering 1.6mm (0.063in.) from case for 10s  
°C  
260  
0.6  
Mounting torque, M3 screw  
Maximum of mounting processes: 3  
M
Nm  
ThermalꢀResistance  
Value  
min. typ. max.  
Parameter  
Symbol Conditions  
Unit  
RthꢀCharacteristics  
IGBT thermal resistance,  
junction - case  
Rth(j-c)  
Rth(j-c)  
Rth(j-a)  
-
-
-
-
-
-
0.28 K/W  
0.46 K/W  
40 K/W  
Diode thermal resistance,  
junction - case  
Thermal resistance  
junction - ambient  
1) Both values limited by bondwires.  
2) Defined by design. Not subject to production test.  
3) Package not recommended for surface mount applications.  
Datasheet  
4
Vꢀ2.3  
2020-10-07  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
StaticꢀCharacteristic  
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA  
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ75.0A  
Tvjꢀ=ꢀ25°C  
Collector-emitter saturation voltage VCEsat  
Tvjꢀ=ꢀ100°C  
650  
-
-
V
V
-
-
-
1.10 1.35  
1.11  
1.12  
-
-
Tvjꢀ=ꢀ150°C  
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ75.0A  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ100°C  
Tvjꢀ=ꢀ150°C  
-
-
-
1.40 1.70  
Diode forward voltage  
VF  
V
V
1.42  
1.40  
-
-
Gate-emitter threshold voltage  
VGE(th)  
ICꢀ=ꢀ1.00mA,ꢀVCEꢀ=ꢀ20V  
4.2  
5.0  
5.8  
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ150°C  
-
-
-
-
40  
-
-
Zero gate voltage collector current ICES  
µA  
1000  
5000  
Tvjꢀ=ꢀ175°C  
Gate-emitter leakage current  
Transconductance  
IGES  
gfs  
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V  
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ75.0A  
-
-
-
100  
-
nA  
S
155.0  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
DynamicꢀCharacteristic  
Input capacitance  
Cies  
-
-
-
12100  
150  
-
-
-
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V  
fꢀ=ꢀ1000kHz  
Output capacitance  
Coes  
Cres  
pF  
nC  
Reverse transfer capacitance  
42  
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ75.0A,  
VGEꢀ=ꢀ15V  
Gate charge  
QG  
-
436.0  
-
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
120  
23  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ75.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ23.0Ω,ꢀRG(off)ꢀ=ꢀ4.0Ω,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
275  
50  
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
1.57  
3.20  
4.77  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
Datasheet  
5
Vꢀ2.3  
2020-10-07  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
59  
-
-
-
ns  
µC  
A
Tvjꢀ=ꢀ25°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ75.0A,  
diF/dtꢀ=ꢀ2000A/µs  
Qrr  
1.30  
37.0  
Diode peak reverse recovery current Irrm  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-2400  
-
A/µs  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
106  
27  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ150°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ75.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ23.0Ω,ꢀRG(off)ꢀ=ꢀ4.0Ω,  
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
330  
144  
2.12  
5.10  
7.22  
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C  
Diode reverse recovery time  
Diode reverse recovery charge  
trr  
-
-
-
79  
-
-
-
ns  
µC  
A
Tvjꢀ=ꢀ150°C,  
VRꢀ=ꢀ400V,  
IFꢀ=ꢀ75.0A,  
Qrr  
2.86  
57.0  
Diode peak reverse recovery current Irrm  
diF/dtꢀ=ꢀ2000A/µs  
Diode peak rate of fall of reverse  
recoveryꢀcurrentꢀduringꢀtb  
dirr/dt  
-
-1950  
-
A/µs  
Datasheet  
6
Vꢀ2.3  
2020-10-07  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
540  
480  
420  
360  
300  
240  
180  
120  
60  
100  
10  
1
not for linear use  
0.1  
0
1
10  
100  
1000  
25  
50  
75  
100  
125  
150  
175  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea  
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase  
(D=0,ꢀTC=25°C,ꢀTvj≤175°C,ꢀVGE=15V,ꢀtp=1µs,  
ICmaxꢀdefinedꢀbyꢀdesignꢀ-ꢀnotꢀsubjectꢀto  
production test)  
temperature  
(Tvj≤175°C)  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
225  
200  
VGE=18V  
14V  
11V  
10V  
8V  
175  
150  
125  
100  
75  
6V  
5V  
50  
25  
0
25  
50  
75  
100  
125  
150  
175  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase  
temperature  
Figure 4. Typicalꢀoutputꢀcharacteristic  
(Tvj=25°C)  
(VGE≥15V,ꢀTvj≤175°C)  
Datasheet  
7
Vꢀ2.3  
2020-10-07  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
225  
200  
220  
200  
180  
160  
140  
120  
100  
80  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ150°C  
VGE = 20V  
18V  
15V  
12V  
10V  
8V  
175  
150  
125  
100  
75  
7V  
6V  
60  
5V  
50  
40  
25  
20  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3
4
5
6
7
8
9
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]  
Figure 5. Typicalꢀoutputꢀcharacteristic  
(Tvj=175°C)  
Figure 6. Typicalꢀtransferꢀcharacteristic  
(VCE=20V)  
1.4  
ICꢀ=ꢀ16A  
ICꢀ=ꢀ35A  
ICꢀ=ꢀ75A  
td(off)  
tf  
td(on)  
tr  
1000  
100  
10  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
1
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75 100 125 150 175 200 225  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
aꢀfunctionꢀofꢀjunctionꢀtemperature  
collectorꢀcurrent  
(VGE=15V)  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=0/15V,ꢀRG(on)=23Ω,ꢀRG(off)=4Ω,ꢀdynamic  
test circuit in Figure E)  
Datasheet  
8
Vꢀ2.3  
2020-10-07  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
1000  
100  
10  
td(off)  
tf  
td(on)  
tr  
1000  
100  
10  
td(off)  
tf  
td(on)  
tr  
1
1
0
10  
20  
30  
40  
50  
25  
50  
75  
100  
125  
150  
175  
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof  
resistance  
junctionꢀtemperature  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=0/15V,ꢀIC=75A,ꢀdynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,  
IC=75A,ꢀRG(on)=23Ω,ꢀRG(off)=4Ω,ꢀdynamicꢀtest  
circuit in Figure E)  
7
6
5
4
3
2
1
18  
16  
14  
12  
10  
8
typ.  
min.  
max.  
Eoff  
Eon  
Ets  
6
4
2
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75 100 125 150 175 200 225  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]  
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
ofꢀjunctionꢀtemperature  
functionꢀofꢀcollectorꢀcurrent  
(IC=1mA)  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=0/15V,ꢀRG(on)=23Ω,ꢀRG(off)=4Ω,ꢀdynamic  
test circuit in Figure E)  
Datasheet  
9
Vꢀ2.3  
2020-10-07  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
10  
9
8
7
6
5
4
3
2
1
0
Eoff  
Eon  
Ets  
Eoff  
Eon  
Ets  
9
8
7
6
5
4
3
2
1
0
0
10  
20  
30  
40  
50  
25  
50  
75  
100  
125  
150  
175  
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀgateꢀresistance  
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀjunctionꢀtemperature  
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,  
VGE=0/15V,ꢀIC=75A,ꢀdynamicꢀtestꢀcircuitꢀin  
Figure E)  
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,  
IC=75A,ꢀRG(on)=23Ω,ꢀRG(off)=4Ω,ꢀdynamicꢀtest  
circuit in Figure E)  
9
18  
16  
14  
12  
10  
8
Eoff  
Eon  
Ets  
VCCꢀ=ꢀ130V  
VCCꢀ=ꢀ520V  
8
7
6
5
4
3
2
1
0
6
4
2
0
200  
250  
300  
350  
400  
450  
500  
0
100  
200  
300  
400  
500  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
QG,ꢀGATEꢀCHARGEꢀ[nC]  
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa  
functionꢀofꢀcollectorꢀemitterꢀvoltage  
Figure 16. Typicalꢀgateꢀcharge  
(IC=75A)  
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,  
IC=75A,ꢀRG(on)=23Ω,ꢀRG(off)=4Ω,ꢀdynamicꢀtest  
circuit in Figure E)  
Datasheet  
10  
Vꢀ2.3  
2020-10-07  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
1E+5  
Cies  
Coes  
Cres  
D = 0.5  
0.2  
0.1  
1E+4  
1000  
100  
0.1  
0.05  
0.02  
0.01  
single pulse  
0.01  
i:  
ri[K/W]: 4.7E-3 0.0564027 0.0496416 0.1540335 0.0124251 1.7E-3  
τi[s]: 2.7E-5 2.5E-4 2.2E-3 0.0141795 0.1200871 1.91251  
1
2
3
4
5
6
10  
0.001  
0
5
10  
15  
20  
25  
30  
1E-6  
1E-5  
1E-4  
0.001  
0.01  
0.1  
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]  
tp,ꢀPULSEꢀWIDTHꢀ[s]  
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof  
collector-emitterꢀvoltage  
Figure 18. IGBTꢀtransientꢀthermalꢀimpedance  
(D=tp/T)  
(VGE=0V,ꢀf=1MHz)  
100  
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ75A  
Tvjꢀ=ꢀ150°C,ꢀIFꢀ=ꢀ75A  
90  
80  
70  
60  
50  
40  
30  
20  
D = 0.5  
0.1  
0.2  
0.1  
0.05  
0.02  
0.01  
single pulse  
0.01  
i:  
1
2
3
4
5
6
7
ri[K/W]: 3.1E-4 0.01435 0.09435 0.09881 0.22828 0.01967 2.0E-3  
τi[s]:  
1.0E-5 3.0E-5  
2.2E-4  
2.2E-3  
0.01247 0.10291 1.85641  
0.001  
1E-6  
1E-5  
1E-4  
0.001  
0.01  
0.1  
1500  
2500  
3500  
4500  
5500  
6500  
tp,ꢀPULSEꢀWIDTHꢀ[s]  
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
Figure 19. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa  
Figure 20. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction  
ofꢀdiodeꢀcurrentꢀslope  
functionꢀofꢀpulseꢀwidth  
(D=tp/T)  
(VR=400V)  
Datasheet  
11  
Vꢀ2.3  
2020-10-07  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
3.50  
140  
130  
120  
110  
100  
90  
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ75A  
Tvjꢀ=ꢀ150°C,ꢀIFꢀ=ꢀ75A  
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ75A  
Tvjꢀ=ꢀ150°C,ꢀIFꢀ=ꢀ75A  
3.25  
3.00  
2.75  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
80  
70  
60  
50  
40  
30  
20  
1500  
2500  
3500  
4500  
5500  
6500  
1500  
2500  
3500  
4500  
5500  
6500  
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
Figure 21. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa  
functionꢀofꢀdiodeꢀcurrentꢀslope  
(VR=400V)  
Figure 22. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa  
functionꢀofꢀdiodeꢀcurrentꢀslope  
(VR=400V)  
-1  
225  
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ75A  
Tvjꢀ=ꢀ150°C,ꢀIFꢀ=ꢀ75A  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
-2  
200  
-3  
-4  
175  
150  
125  
100  
75  
-5  
-6  
-7  
-8  
50  
-9  
25  
-10  
-11  
0
1500  
2500  
3500  
4500  
5500  
6500  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]  
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]  
Figure 23. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse  
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode  
currentꢀslope  
Figure 24. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction  
ofꢀforwardꢀvoltage  
(VR=400V)  
Datasheet  
12  
Vꢀ2.3  
2020-10-07  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
1.8  
IFꢀ=ꢀ16A  
IFꢀ=ꢀ35A  
IFꢀ=ꢀ75A  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
25  
50  
75  
100  
125  
150  
175  
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]  
Figure 25. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction  
ofꢀjunctionꢀtemperature  
Datasheet  
13  
Vꢀ2.3  
2020-10-07  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
Package Drawing PG-TO247-4  
Datasheet  
14  
Vꢀ2.3  
2020-10-07  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
Testing Conditions  
VGE(t)  
I,V  
90% VGE  
trr = ta + tb  
dIF/dt  
Qrr = Qa + Qb  
a
b
10% VGE  
t
Qa  
Qb  
IC(t)  
dI  
90% IC  
90% IC  
10% IC  
10% IC  
Figure C. Definition of diode switching  
characteristics  
t
VCE(t)  
t
t
td(off)  
tf  
td(on)  
tr  
Figure A.  
VGE(t)  
90% VGE  
Figure D.  
10% VGE  
t
IC(t)  
CC  
2% IC  
t
VCE(t)  
Figure E. Dynamic test circuit  
Parasitic inductance L ,  
parasitic capacitor C ,  
s
s
relief capacitor C ,  
(only for ZVT switching)  
r
t2  
t4  
E
=
VCE x IC x dt  
E
=
VCE x IC x dt  
off  
on  
2% VCE  
t1  
t3  
t
t1  
t2  
t3  
t4  
Figure B.  
Datasheet  
15  
Vꢀ2.3  
2020-10-07  
IKZ75N65EL5  
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration  
RevisionꢀHistory  
IKZ75N65EL5  
Revision:ꢀ2020-10-07,ꢀRev.ꢀ2.3  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.1  
2.2  
2.3  
2014-12-10 Final data sheet  
2020-10-07 VGE(th): test condition update  
2020-10-07 Package picture correction  
Datasheet  
16  
Vꢀ2.3  
2020-10-07  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
ꢀ
ꢀ
ꢀ
ꢀ
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀInfineonꢀTechnologiesꢀAGꢀ2020.  
AllꢀRightsꢀReserved.  
ImportantꢀNotice  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics  
(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany  
informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand  
liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird  
party.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀof  
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customer’sꢀtechnicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀthe  
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PleaseꢀnoteꢀthatꢀthisꢀproductꢀisꢀnotꢀqualifiedꢀaccordingꢀtoꢀtheꢀAECꢀQ100ꢀorꢀAECꢀQ101ꢀdocumentsꢀofꢀtheꢀAutomotive  
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