IL211 [INFINEON]

PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER; PHOTOTRANSISTOR小尺寸表面贴装光耦合器


型号：	IL211
厂家：	Infineon
描述：	PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER PHOTOTRANSISTOR小尺寸表面贴装光耦合器光电
文件：	总3页 (文件大小：48K)
中文：	中文翻译
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IL211AT/IL212AT/IL213AT

PHOTOTRANSISTOR

SMALL OUTLINE

SURFACE MOUNT OPTOCOUPLER

NEW

FEATURES

Package Dimensions in Inches (mm)

• High Current Transfer Ratio

IL211AT—20% Minimum

IL212AT—50% Minimum

.120±.005

(3.05±.13)

.240

Anode

Base

Collector

Emitter

.154±.005 Cathode

(3.91±.13)

IL213AT—100% Minimum

(6.10)

• Isolation Voltage, 2500 VAC_RMS

• Electrical Specifications Similar to

Standard 6 Pin Coupler

.016 (.41)

Pin One ID

7°

.058±.005

(1.49±.13)

40°

.192±.005

(4.88±.13)

.015±.002

(.38±.05)

• Industry Standard SOIC-8 Surface

Mountable Package

• Standard Lead Spacing, .05"

.004 (.10)

.008 (.20)

.125±.005

(3.18±.13)

.008 (.20)

5° max.

• Available in Tape and Reel (suffix T)

(Conforms to EIA Standard RS481A)

• Compatible with Dual Wave, Vapor Phase

and IR Reflow Soldering

• Underwriters Lab File #E52744

(Code Letter P)

Lead

R.010

.050 (1.27)

typ.

.021 (.53)

Coplanarity

±.0015 (.04)

max.

(.25) max.

.020±.004

(.15±.10)

2 plcs.

TOLERANCE: ±.005 (unless otherwise noted)

Characteristics (T_A=25°C)

Symbol Min. Typ. Max. Unit

Condition

DESCRIPTION

Emitter

The IL211AT/212AT/213AT are optically coupled

pairs with a Gallium Arsenide infrared LED and a

silicon NPN phototransistor. Signal information,

including a DC level, can be transmitted by the device

while maintaining a high degree of electrical isolation

between input and output. The IL211AT//212AT/

213AT comes in a standard SOIC-8 small outline

package for surface mounting which makes it ideally

suited for high density applications with limited space.

In addition to eliminating through-holes requirements,

this package conforms to standards for surface

mounted devices.

Forward Voltage

Reverse Current

Capacitance

Detector

Breakdown Voltage BV_CEO

BV_ECO

V_F

I_R

C_O

1.3

0.1

1.5

100 µA

I_F=10 mA

V_R=6.0 V

V_R=0

I_C=10 µA

I_E=10 µA

V_CE=10 V,

I_F=0

Collector-Emitter

Dark Current

Collector-Emitter

Capacitance

Package

I_CEOdark

C_CE

V_CE=0

DC Current Transfer CTR_DC

I_F=10 mA

V_CE=5 V

A choice of 20, 50, and 100% minimum CTR at

I_F=10 mA makes these optocouplers suitable for a

variety of different applications.

IL211AT

IL212AT

IL213AT

Collector-Emitter

Saturation Voltage V_{CE sat}

20 50

50 80

100 130

Maximum Ratings

Emitter

0.4

I_F=10 mA,

I_C=2.0 mA

Peak Reverse Voltage.......................................6.0 V

Continuous Forward Current .......................... 60 mA

Power Dissipation at 25°C .............................90 mW

Derate Linearly from 25°C .......................1.2 mW/°C

Detector

Collector-Emitter Breakdown Voltage ................30 V

Emitter-Collector Breakdown Voltage ..................7 V

Collector-Base Breakdown Voltage ...................70 V

Power Dissipation ........................................150 mW

Derate Linearly from 25°C .......................2.0 mW/°C

Package

Total Package Dissipation at 25°C Ambient

(LED + Detector) ......................................280 mW

Derate Linearly from 25°C .......................3.3 mW/°C

Storage Temperature .....................–55°C to +150°C

Operating Temperature .................–55°C to +100°C

Soldering Time at 260°C ............................... 10 sec.

Isolation Test

Voltage

V_IO

C_IO

2500

0.5

VAC_RMS

Capacitance,

Input to Output

Resistance,

Input to Output

Switching Time

R_IO

t_ON, t_OFF

100

3.0

GΩ

µs

I_C=2 mA,

R_E=100 Ω,

V_CE=10 V

Specifications subject to change.

Semiconductor Group

4–4

10.95

Figure 1. Forward voltage versus forward current

Figure 2. Normalized non-saturated and

saturated CTRce versus LED current

1.5

1.4

Normalized to:

Vce = 10 V

IF = 10 mA

Ta = 25°C

1.3

1.2

1.1

1.0

0.9

0.8

0.7

Ta = -55°C

Ta = 25°C

Vce = 5 V

1.0

0.5

0.0

Ta = 85°C

Vce = 0.4 V

100

IF - Forward Current - mA

IF - LED Current - mA

Figure 3. Collector-emitter current versus LED

current

Figure 4. Normalized collector-base

photocurrent versus LED current

150

100

Ta = 25°C

Normalized to:

Vcb = 9.3 V

IF = 1 mA

Ta = 25 °C

Vce = 10 V

100

Vce = 0.4 V

100

IF - LED Current - mA

Figure 5. Normalized collector-base

photocurrent versus LED current

Figure 6. Collector-base photocurrent versus

LED current

1000

Ta = 25°C

Normalized to:

Vcb = 9.3 V

IF = 10 mA

Vcb = 9.3 V

100

Ta = 25 °C

.01

100

IF - LED Current - mA

Figure 7. Collector-emitter leakage current

versus temperature

Figure 8. Normalized saturated HFE versus

base current and temperature

2.0

70°C

Normalized to:

50°C

Ib = 20µA

Vce = 10 V

Ta = 25 °C

1.5

1.0

0.5

0.0

25°C

Vce = 10V

TYPICAL

Vce = 0.4 V

-1

-2

-20

100

1000

Ta - Ambient Temperature - °C

Ib - Base Current - µA

Semiconductor Group

4–5

Figure 9. Typical switching characteristics

versus base resistance (saturated operation)

Figure 10. Typical switching times

versus load resistance

1000

100

Input:

Pulse width=100 mS

Duty cycle=50%

Input:

500

I =10 mA

=10mA

Pulse width=100 mS

Duty cycle=50%

100

1.0

0.1

0.5

50 100

10K

50K 100K 500K 1M

(Ω)

Load resistance R (KΩ)

Base-emitter resistance, R

Semiconductor Group

4–6

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