IL4117 [INFINEON]
ZERO VOLTAGE CROSSING TRIAC DRIVER OPTOCOUPLER; 电压过零点TRIAC驱动光电耦合器
| 型号： | IL4117 |
| 厂家： | 
Infineon |
| 描述： | ZERO VOLTAGE CROSSING TRIAC DRIVER OPTOCOUPLER |
| 文件： | 总3页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
600 V IL4116
700 V IL4117
800 V IL4118
ZERO VOLTAGE CROSSING
TRIAC DRIVER OPTOCOUPLER
FEATURES
• High Input Sensltlvity: I =1.3 mA, PF=1.0;
FT
Dimensions in inches (mm)
I
=3.5 mA,Typlcal PF < 1.0
FT
• Zero Voltage Crosslng
• 600/700/800 V Blocklng Voltage
• 300 mA On-State Current
Pin One ID.
2
1
3
LED
Triac
1
2
3
6
5
4
Anode
Anode 2
• High Statlc dv/dt 10,000 V/µsec., typical
• Inverse Parallel SCRs Provide Commutatlng
dv/dt >10 KV/msec.
• Very Low Leakage <10 mA
• Isolation Test Voltage from Double Molded
Package 5300 VACRMS
.248 (6.30)
.256 (6.50)
Substrate
do not
connect
LED
Cathode
Triac
Anode 1
4
5
6
NC
ZCC*
.335 (8.50)
.343 (8.70)
*Zero Crossing Circuit
.300 (7.62)
Typ.
• Package, 6-Pln DIP
• Underwriters Lab File #E52744
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
DESCRIPTION
The IL411x consists of an AlGaAs IRLED optically
coupled to a photosensitive zero crossing TRIAC
network. The TRIAC consists of two inverse parallel
connected monolithic SCRs. These three semicon-
ductors are assembled in a six pin 0.3 inch dual in-
line package, using high insulation double molded,
over/under leadframe construction.
4°
18° Typ.
.110 (2.79)
.150 (3.81)
Typ.
.020 (.051) Min.
.010 (.25)
.014 (.35)
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300 (7.62)
.347 (8.82)
.100 (2.54) Typ.
High input sensitivity is achieved by using an emit-
ter follower phototransistor and a cascaded SCR
predriver resulting in an LED trigger current of less
than 1.3 mA(DC).
Maximum Ratings
Emitter
Reverse Voltage ...................................................................................6 V
Forward Current.............................................................................. 60 mA
Surge Current ................................................................................... 2.5 A
Power Dissipation .........................................................................100 mW
Derate Linearly from 25°C ..................................................... 1.33 mW/°C
Thermal Resistance ................................................................... 750 °C/W
The IL411x uses two discrete SCRs resulting in a
commutating dV/dt greater than 10 KV/ms The use
of a proprietary dv/dt clamp results in a static dv/dt
of greater than 10 KV/µs. This clamp circuit has a
MOSFET that is enhanced when high dv/dt spikes
occur between MT1 and MT2 of the TRIAC. When
conducting, the FET clamps the base of the pho-
totransistor, disabling the first stage SCR predriver.
The zero cross line voltage detection circuit con-
sists of two enhancement MOSFETS and a photo-
diode. The inhibit voltage of the network is
determined by the enhancement voltage of the N-
channel FET. The P-channel FET is enabled by a
photocurrent source that permits the FET to con-
duct the main voltage to gate on the N-channel FET.
Once the main voltage can enable the N-channel, it
clamps the base of the phototransistor, disabling
the first stage SCR predriver.
The blocking voltage of up to 800 V permits control
of off-line voltages up to 240 VAC, with a safety fac-
tor of more than two, and is sufficient for as much as
380 VAC. Current handling capability is up to 300
mA RMS continuous at 25°C.
The IL411x isolates low-voltage logic from 120, 240,
and 380 VAC lines to control resistive, inductive, or
capacitive loads including motors, solenoids, high
current thyristors or TRIAC and relays.
Detector
Peak Off-State Voltage
IL4116 ...........................................................................................600 V
IL4117 ...........................................................................................700 V
IL4118 ...........................................................................................800 V
RMS On-State Current.................................................................. 300 mA
Single Cycle Surge .............................................................................. 3 A
Total Power Dissipation ................................................................500 mW
Derate Linearly from 25°C ....................................................... 6.6 mW/°C
Thermal Resistance .................................................................... 150°C/W
Package
Storage Temperature ..................................................... –55°C to +150°C
Operating Temperature ................................................. –55°C to +100°C
Lead Soldering Temperature ................................................260°C/5 sec.
Isolation Test Voltage ...........................................................5300 VAC
Isolation Resistance
RMS
12
V =500 V, T =25°C..................................................................≥10
Ω
IO
A
11
V =500 V, T =100°C................................................................≥10
Ω
IO
A
Applications include solid-state relays, industrial
controls, office equipment, and consumer appli-
ances.
5–1
Characteristics (T =25°C)
A
Parameter
Symbol
Min.
Typ.
Max.
1.5
Unit
Condition
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
V
1.3
30
V
I -20 mA
F
F
V
6
V
I =10 µA
R
BR
I
0.1
40
10
µA
pF
°C/W
V =6 V
R
R
C
R
V =0 V, f=1 MHz
F
O
Thermal Resistance, Junction to Lead
Output Detector
750
THJL
Repetitive Peak Off-State Voltage
IL4116
IL4117
IL4118
V
600
700
800
650
750
850
V
V
V
I
=100 mA
=100 mA
=100 mA
DRM
DRM
V
I
DRM
DRM
V
I
DRM
DRM
Off-State Voltage
IL4116
IL4117
V
424
494
565
460
536
613
V
V
V
I
=70 µA
=70 µA
=70 µA
D(RMS)
D(RMS)
V
I
D(RMS)
D(RMS)
IL4118
V
I
D(RMS)
D(RMS)
Off-State Current
I
10
100
3
µA
V
V =600 V, T =100°C
D(RMS)
D
A
On-State Voltage
V
1.7
I =300 mA
T
TM
On-State Current
I
300
3
mA
A
PF=1.0, V
=1.7 V
T(RMS)
TM
Surge (Non-Repetitive, On-State Current)
Holding Current
I
TSM
f=50 Hz
I
65
5
200
µA
mA
mA
V
V =3 V
T
H
Latchiing Current
I
V =2.2 V
T
L
LED Trigger Current
Zero Cross Inhibit Voltage
Turn-On Time
I
0.7
15
35
50
1.3
25
V =5 V
AK
FT
V
I =Rated I
F FT
IH
t
t
µs
V
=V =424 VAC
ON
RM DM
Turn-Off Time
µs
PF=1.0, I =300 mA
T
OFF
Critical State of Rise: Off-State Voltage
dv
/dt
10,000
10,000
V/µs
V/µs
V
V
, V =400 VAC, T =25°C
(MT)
RM DM
, V =400 VAC, T =80°C
A
2000
RM DM
A
Commutating Voltage
dv
/dt
V/µs
V/µs
V
V
, V =400 VAC, T =25°C
(COM)
RM DM
A
2000
100
, V =400 VAC, T =80°C
RM DM
A
Commutating Current
Thermal Resistance, Junction to Lead
Package
di/dt
R
A/ms
I =300 mA
T
150
°C/W
THJL
Critical State of Rise of Couplrd
Input-Output Voltage
dv /dt
10,000
V/µs
I =0 A, V =V =424 VAC
T RM DM
(IO)
Common Mode Coupling Capacitor
Package Capacitance
C
C
0.01
0.8
pF
pF
CM
IO
f=1 MHz, V =0 V
IO
Figure 2. Forward voltage versus forward current
Figure 1. LED forward current vs. forward voltage
IL4116/4117/4118
5–2
Figure 3. Peak LED current vs. duty factor,Tau
Power Factor Considerations
A snubber isn’t needed to eliminate false operation of the
TRIAC driver because of the IL411’s high static and commutat-
ing dv/dt with loads between 1 and 0.8 power factors. When
inductive loads with power factors less than 0.8 are being
driven, include a RC snubber or a single capacitor directly
across the device to damp the peak commutating dv/dt spike.
Normally a commutating dv/dt causes a turning-off device to
stay on due to the stored energy remaining in the turning-off
device.
But in the case of a zero voltage crossing optotriac, the com-
mutating dv/dt spikes can inhibit one half of the TRIAC from
turning on. If the spike potential exceeds the inhibit voltage of
the zero cross detection circuit, half of the TRIAC will be held-
off and not turn-on. This hold-off condition can be eliminated by
using a snubber or capacitor placed directly across the optot-
riac as shown in Figure 7. Note that the value of the capacitor
increases as a function of the load current.
Figure 4. Maximum LED power dissipation
The hold-off condition also can be eliminated by providing a
higher level of LED drive current. The higher LED drive pro-
vides a larger photocurrent which causer. the phototransistor to
turn-on before the commutating spike has activated the zero
cross network. Figure 8 shows the relationship of the LED drive
for power factors of less than 1.0. The curve shows that if a
device requires 1.5 mA for a resistive load, then 1.8 times (2.7
mA) that amount would be required to control an inductive load
whose power factor is less than 0.3.
Figure 7. Shunt capacitance versus load current
versus power factor
Figure 5. On-state terminal voltage vs. terminal current
Figure 6. Maximum output power dissipation
Figure 8. Normalized LED trigger current
IL4116/4117/4118
5–3
相关型号：
IL4117-X007
Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Very Low Input Current
VISHAY
IL4117-X017
Optocoupler - Trigger Device Output, 1 CHANNEL TRIAC OUTPUT WITH ZERO CRSVR OPTOCOUPLER, ROHS COMPLIANT, SMD, 6 PIN
VISHAY
IL4118-X006
Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Very Low Input Current
VISHAY
IL4118-X007
Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Very Low Input Current
VISHAY
IL4118-X009
Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Very Low Input Current
VISHAY
©2020 ICPDF网 联系我们和版权申明