ILD31 [INFINEON]

PHOTODARLINGTON OPTOCOUPLER; 光电复合光耦
ILD31
型号: ILD31
厂家: Infineon    Infineon
描述:

PHOTODARLINGTON OPTOCOUPLER
光电复合光耦

光电 输出元件
文件: 总3页 (文件大小:68K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SINGLE CHANNEL IL30/31/55  
DUAL CHANNEL ILD30/31/55  
FEATURES  
QUAD CHANNEL ILQ30/31/55  
• Current Transfer Ratio  
IL/ILD/ILQ30/55, 100% min.  
IL/ILD/ILQ31, 200% min.  
PHOTODARLINGTON OPTOCOUPLER  
125 mA Load Current Rating  
Dimensions in inches (mm)  
• Fast Rise Time, 10 µS  
• Fast Fall Time, 35 µS  
• Single, Dual and Quad Channel  
• Solid State Reliability  
Single Channel  
Pin one I.D.  
Anode  
2
1
3
6
5
4
1
2
3
NC  
.248 (6.30)  
.256 (6.50)  
Cathode  
NC  
Collector  
Emitter  
• Standard DIP Packages  
• Underwriters Lab File #E52744  
4
5
6
.335 (8.50)  
.343 (8.70)  
VE  
D
VDE 0884 Available with Option 1  
.300 (7.62)  
typ.  
.039  
(1.00)  
min.  
DESCRIPTION  
.130 (3.30)  
The IL30/31/55, ILD30/31/55, and ILQ30/31/55 are  
optically coupled isolators wih Gallium Arsenide  
infrared emitters and silicon photodarlington sen-  
sors. Switching can be achieved while maintaining  
a high degree of isolation between driving and  
load circuits, with no crosstalk between channels.  
These optocouplers can be used to replace reed  
and mercury relays with advantages of long life,  
high speed switching and elimination of magnetic  
elds.  
.150 (3.81)  
4°  
18° typ.  
.110 (2.79)  
.150 (3.81)  
typ.  
.020 (.051) min.  
.010 (.25)  
.014 (.35)  
.031 (0.80)  
.035 (0.90)  
.018 (0.45)  
.022 (0.55)  
.300 (7.62)  
.347 (8.82)  
.100 (2.54) typ.  
Dual Channel  
Pin one I.D.  
1
4
5
3
6
2
7
Anode  
1
2
8
7
Emitter  
.255 (6.48)  
.268 (6.81)  
Cathode  
Cathode  
Anode  
Collector  
Collector  
Emitter  
The Il30/31/55 are equivalent to MCA230/MCA231/  
MCA255. The ILD30/31/55 re designed to reduce  
board space requirements in high density applica-  
tions.  
3
4
6
5
8
.379 (9.63)  
.390 (9.91)  
.130 (3.30  
.150 (3.81)  
.305 typ.  
Maximum Ratings  
Emitter (each channel)  
.030 (.76)  
.045 (1.14)  
(7.75) typ.  
Peak Reverse Voltage........................................ 3 V  
Continuous Forward Current......................... 60 mA  
Power Dissipation at 25°C ......................... 100 mW  
Derate Linearly from 25°C ................... 1.33 mW/°C  
Detector (each channel)  
4°  
typ.  
10 °  
typ.  
.115 (2.92)  
.135 (3.43)  
3°–9°  
.030 (.76 )  
.040 (1.02)  
.018 (.46)  
.022 (.56)  
.008 (.20)  
.012 (.30)  
Collector-Emitter Breakdown Voltage  
.100 (2.54) typ.  
IL/D/Q30....................................................... 30 V  
IL/D/Q55....................................................... 55 V  
Collector (Load) Current............................. 125 mA  
Power Dissipation at 25°C Ambient........... 150 mW  
Derate Linearly from 25°C ..................... 2.0 mW/°C  
Package  
Total Package Power Dissipation at 25°C  
IL30/31/55................................................ 250 mW  
ILD30/31/55 ............................................. 400 mW  
ILQ30/31/55 ............................................. 500 mW  
Derate Linearly from 25°C  
Quad Channel  
Anode  
Cathode  
Cathode  
Anode  
1
2
3
4
5
16 Emitter  
Pin  
15 Collector  
one  
I.D.  
8
7
6
5
4
3
2
1
14  
Collector  
13  
Emitter  
.240 (6.10)  
.260 (6.60)  
12 Emitter  
Anode  
6
7
11 Collector  
Cathode  
Cathode  
Anode  
9
10  
12  
16  
11  
13 14 15  
10  
9
Collector  
Emitter  
.780 (19.81)  
.800 (20.32)  
8
.040 (1.02)  
.050 (1.27)  
.300 (7.62)  
typ.  
.048 (1.22)  
.052 (1.32)  
IL30/31/55............................................ 3.3 mW/°C  
ILD30/31/55 ....................................... 5.33 mW/°C  
ILQ30/31/55 ....................................... 6.67 mW/°C  
.034 (.86)  
.130 (3.30)  
.150 (3.81)  
.280 (7.11)  
.330 (8.38)  
Isolation Test Voltage ........................ 5300 VAC  
.014  
(.35)  
typ.  
RMS  
.130 (3.30)  
.150 (3.81)  
Creepage ................................................7 mm min.  
Clearance ...............................................7 mm min.  
Comparative Tracking Index............................. 175  
Storage Temperature ................... –55°C to +125°C  
Operating Temperature................ –55°C to +100°C  
Lead Soldering Time at 260°C ....................10 sec.  
.020 (.51)  
.030 (.76)  
.0255 (.65)  
typ.  
.100 (2.54) typ.  
3° to 9°  
.033 (.84)  
typ.  
.008 (.20)  
.012 (.31)  
.016 (.41)  
.020 (.51)  
5–1  
Electrical Characteristics (T =25°C)  
A
Symbol  
Min.  
Typ.  
Max..  
Unit  
Condition  
GaAs Emitter (per channel)  
Forward Voltage  
V
1.25  
0.1  
25  
1.5  
10  
V
I =20 mA  
F
F
Reverse Current  
I
µA  
pF  
V =3.0 V  
R
R
Capacitance  
C
V =0 V  
R
O
Detector (per channel)  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Leakage Current  
Collector-Emitter Capacitance  
Package  
BV  
30/55  
V
I =100 µA  
C
CEO  
I
1.0  
3.4  
100  
nA  
pF  
V
=10 V, I =0  
CEO  
CE  
F
C
V
=10 V, f=1 MHz  
CE  
CE  
Current Transfer Ratio  
IL/D/Q30/55  
IL/D/Q31  
CTR  
100  
200  
400  
400  
%
%
I =10 mA,V =5 V  
F CE  
I =10 mA,V =5 V  
F CE  
Collector-Emitter Saturation Voltage  
Isolation Test Voltage  
V
0.9  
1.0  
V
I =50 mA, I =50 mA  
C F  
CEsat  
5300  
VAC  
RM  
S
12  
Isolation Resistance  
Coupling Capacitance  
Rise Time  
R
C
10  
W
pF  
µs  
µs  
ISOL  
0.5  
10  
35  
ISOL  
t
t
V
=13.5 V, I =50 mA,  
R
CC F  
R =100 Ω  
L
Fall Time  
F
Figure 1. Forward voltage versus forward current  
Figure 3. Normalized non-saturated and saturated  
collector-emitter current versus LED current  
1.4  
10  
Normalized to:  
Ta = 25°C  
Vce = 5 V  
1.3  
Ta = -55°C  
Ta = 25°C  
1.2  
1.1  
1.0  
IF = 10 mA  
Vce = 5 V  
1
.1  
Vce = 1V  
0.9  
0.8  
0.7  
Ta = 85°C  
.01  
.001  
.1  
1
10  
100  
100  
IF - Forward Current - mA  
.1  
1
10  
IF - LED Current - mA  
Figure 4. Normalized collector-base photocurrent  
versus LED current  
Figure 2. Normalized non-saturated and saturated  
CTRce at T =25°C versus LED current  
A
1.2  
10  
Normalized to:  
Normalized to:  
Vce = 5 V  
IF = 10 mA  
Ta = 25 °C  
Ta = 25°C  
Vcb = 3.5 V  
IF = 10 mA  
1.0  
1
.1  
0.8  
0.6  
0.4  
0.2  
0.0  
Vce = 5V  
.01  
.001  
Vce =1V  
.1  
1
10  
100  
1000  
.1  
1
10  
100  
IF - LED Current - mA  
IF - LED Current - mA  
IL/D/Q30/31/55  
5–2  
Figure 5. Hfe current gain versus base current  
Figure 8. Switching waveforms  
12000  
I
F
Vce=5V  
10000  
Ta=25°C  
8000  
Vce=1V  
6000  
t
R
D
t
V
O
4000  
2000  
0
t
PLH  
V =1.5 V  
TH  
.01  
.1  
1
10  
100  
t
t
t
S
F
PHL  
Base Current  
Figure 6. Low to high propagation delay versus collector  
load resistance and LED current  
Figure 9. Switching schematic  
80  
VCC=13.5 V  
F=10 KHz,  
Ta = 25°C, Vcc = 5V  
1KΩ  
Vth = 1.5 V  
RC  
60  
DF=50%  
VO  
220Ω  
40  
470Ω  
I =50 mA  
F
20  
100Ω  
0
0
5
10  
15  
20  
IF - LED Current - mA  
Figure 7. High to low propagation delay versus collector  
load resistance and LED current  
20  
1KΩ  
Ta = 25°C  
Vcc = 5 V  
Vth = 1.5 V  
15  
10  
5
100Ω  
0
0
5
10  
15  
20  
IF - LED Current - mA  
IL/D/Q30/31/55  
5–3  

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