ILD5 [INFINEON]

PHOTOTRANSISTOR OPTOCOUPLER; 光电晶体管光耦合器


型号：	ILD5
厂家：	Infineon
描述：	PHOTOTRANSISTOR OPTOCOUPLER 光电晶体管光耦合器晶体光电晶体管光电晶体管输出元件
文件：	总4页 (文件大小：72K)
中文：	中文翻译
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DUAL CHANNEL ILD1/2/5

QUAD CHANNEL ILQ1/2/5

PHOTOTRANSISTOR

OPTOCOUPLER

FEATURES

Dimensions in inches (mm)

• Current Transfer Ratio at I =10 mA

Dual Channel

ILD/Q1, 20% Min.

ILD/Q2, 100% Min.

Pin One I.D.

Anode

Cathode

Anode

Emitter

ILD/Q5, 50% Min.

• High Collector-Emitter Voltage

.268 (6.81)

.255 (6.48)

Collector

Emitter

ILD/Q1: BV

=50 V

CEO

ILD/Q2, ILD/Q5: BV

• Field-Effect Stable by TRansparent IOn

Shield (TRIOS) Isolation Test Voltage, 5300

=70 V

CEO

.390 (9.91)

.379 (9.63)

.305 Typ.

(7.75) Typ.

VAC

.045 (1.14)

.030 (.76)

RMS

•

Underwriters Lab File #E52744

.150 (3.81)

.130 (3.30)

V_E

VDE 0884 Available with Option 1

.135 (3.43)

.115 (2.92)

4° Typ.

10 ° Typ.

3°–9°

Maximum Ratings (Each Channel)

.040 (1.02)

.030 (.76 )

.022 (.56)

.018 (.46)

Emitter

.012 (.30)

.008 (.20)

.100 (2.54) Typ.

Reverse Voltage ................................................6 V

Forward Current ...........................................60 mA

Surge Current................................................. 2.5 A

Power Dissipation.......................................100 mW

Derate Linearly from 25°C ..................... 1.3 mW/°C

Quad Channel

Pin One I.D.

Anode

Cathode

Anode

16 Emitter

15 Collector

14 Collector

13 Emitter

12 Emitter

11 Collector

.268 (6.81)

.255 (6.48)

Detector

Collector-Emitter Reverse Voltage

Anode

Cathode

Anode

ILD/Q1 ........................................................... 50 V

ILD/Q2, ILD/Q5...............................................70 V

Collector Current .......................................... 50 mA

Collector Current (t<1 ms)...........................400 mA

Power Dissipation.......................................200 mW

Derate Linearly from 25°C ......................2.6 mW/°C

Collector

Emitter

.790 (20.07)

.779 (19.77 )

.305 Typ.

(7.75) Typ.

.150 (3.81)

.130 (3.30)

.045 (1.14)

.030 (.76)

.135 (3.43)

.115 (2.92)

Package

4° Typ.

10 ° Typ.

3°–9°

.012 (.30)

.008 (.20)

Isolation Test Voltage (between

emitter and detector referred to

standard climate 23°C/50%RH,

.040 (1.02)

.030 (.76 )

.022 (.56)

.018 (.46)

.100 (2.54) Typ.

DIN 50014) .................................... 5300 VAC

RMS

Creepage ............................................... min. 7 mm

Clearance ............................................... min. 7 mm

DESCRIPTION

Isolation Resistance

The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infrared

LEDs and silicon NPN phototransistor. Signal information, including a DC

level, can be transmitted by the drive while maintaining a high degree of

electrical isolation between input and output. The ILD/Q1/2/5 are especially

designed for driving medium-speed logic and can be used to eliminate trou-

blesome ground loop and noise problems. Also these couplers can be

used to replace relays and transformers in many digital interface applica-

tions such as CRT modulation. The ILD1/2/5 has two isolated channels in a

single DIP package and the ILQ1/2/5 has four isolated channels per pack-

age.

V =500 V, T =25°C ......................... R =10

Ω

V =500 V, T =100°C ....................... R =10

Package Power Dissipation ...................... 250 mW

Derate Linearly from 25°C ..................... 3.3 mW/°C

Storage Temperature ................... –40°C to +150°C

Operating Temperature ................–40°C to +100°C

Junction Temperature .................................... 100°C

Soldering Temperature

(2 mm from case bottom) .......................... 260°C

See Appnote 45, “How to Use Optocoupler Normalized Curves.”

5–1

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Condition

Emitter

Forward Voltage

1.25

0.01

1.65

I =60 mA

Reverse Current

µA

V =6 V

Capacitance

V =0 V, f=1 MHz

Thermal Resistance, Junction to Lead

Detector

750

°C/W

THJL

Capacitance

6.8

=5 V, f=1 MHz

V =10 V

Leakage Current, Collector-Emitter

Saturation Voltage, Collector-Emitter

DC Forward Current Gain

Saturated DC Forward Current Gain

Thermal Resistance, Junction to Lead

CEO

0.25

650

400

500

0.4

=1 mA, I =20 µA

CESAT

CE B

HFE

200

120

1800

600

V = 10 V, I =20 µA

CE B

= 0.4 V, I =20 µA

SAT

THJL

°C/W

Package Transfer Characteristics (Each Channel)

Symbol

Min.

Typ.

Max.

Unit

Condition

ILD/Q1

Saturated Current Transfer Ratio (Collector-Emitter) CTR

I =10 mA, V =0.4 V

F CE

CESAT

Current Transfer Ratio (Collector-Emitter)

CTR

300

500

400

I =10 mA, V =10 V

F CE

ILD/Q2

Saturated Current Transfer Ratio (Collector-Emitter) CTR

170

200

I =10 mA, V =0.4 V

F CE

CESAT

Current Transfer Ratio (Collector-Emitter)

CTR

100

I =10 mA, V =10 V

F CE

ILD/Q5

Saturated Current Transfer Ratio (Collector-Emitter) CTR

100

130

I =10 mA, V =0.4 V

F CE

CESAT

Current Transfer Ratio (Collector-Emitter)

Isolation and Insulation

CTR

I =10 mA, V =10 V

F CE

Common Mode Rejection, Output High

Common Mode Rejection, Output Low

Common Mode Coupling Capacitance

Package Capacitance

5000

0.01

0.8

V/µs

=50 V , R =1 kΩ, I =0 mA

CM P-P L F

=50 V , R =1 kΩ, I =10 mA

P-P L F

V =0 V, f=1 MHz

ILD/Q1/2/5

5–2

Typical Switching Times

Characteristic ILD/Q1

ILD/Q2

ILD/Q5

Unit

Condition

Figure 1. Non-saturated switching timing

I =20 mA I =5 mA

I =10 mA

Delay, t

0.8

1.7

2.6

0.4

2.2

1.1

µs

=5 V

I =10 mA

Rise time, t

1.9

0.2

1.4

0.7

2.6

0.4

2.2

1.2

=5 V

F=10 KHz,

DF=50%

Storage, t

R =75 Ω

R =75 kΩ

50% of V

Fall Time, t

Propagation

H-L, t

Figure 2. Non-saturated switching timing

PHL

I_F

Propagation

L-H, t

1.4

2.3

2.5

µs

PLH

Characteristic ILD/Q1

ILD/Q2

ILD/Q5

Unit

Condition

I =20 mA I =5 mA

I =10 mA

t_PHL

Delay, t

0.8

1.7

µs

t_PLH

Rise time, t

1.2

7.4

7.6

1.6

t_S

=0.4 V

Storage, t

5.4

13.5

5.4

4.6

2.6

R =1 kΩ

50%

=5 V

Fall Time, t

=1.5 V

t_F

t_R

t_D

Propagation

H-L, t

PHL

Propagation

L-H, t

8.6

7.4

7.2

µs

Figure 3. Saturated switching timing

PLH

F=10 KHz,

DF=50%

=5 V

Figure 5. Normalized non-saturated and saturated

CTR at T =25°C versus LED current

1.4

I =10 mA

1.3

Ta = -55°C

1.2

1.1

Ta = 25°C

Figure 4. Saturated switching timing

1.0

I_F

0.9

Ta = 100°C

0.8

0.7

100

If - Forward Current - mA

t_D

Figure 6. Normalized non-saturated and saturated

CTR at T =25°C versus LED current

t_R

1.5

t_PLH

Normalized to:

Vce = 10V, IF = 10mA

Ta = 25°C

V_TH=1.5 V

CTRce(sat) Vce = 0.4V

1.0

t_F

t_S

t_PHL

0.5

NCTR(SAT)

NCTR

0.0

100

IF - LED Current - mA

ILD/Q1/2/5

5–3

Figure 10. Collector-emitter current versus tempera-

ture and LED current

Figure 7. Normalized non-saturated and saturated

CTR at T =50°C versus LED current

1.5

Normalized to:

Vce = 10V, IF = 10mA, Ta = 25°C

CTRce(sat) Vce = 0.4V

50°C

1.0

Ta = 50°C

70°C

25°C

85°C

0.5

NCTR(SAT)

NCTR

0.0

IF - LED Current - mA

100

IF - LED Current - mA

Figure 11. Collector-emitter leakage current versus

temperature

Figure 8. Normalized non-saturated and saturated

CTR at T =70°C versus LED current

1.5

Normalized to:

Vce = 10V, IF = 10mA

Ta = 25°C

CTRce(sat) Vce = 0.4V

1.0

Vce = 10V

TYPICAL

0.5

Ta = 70°C

-1

-2

NCTR(SAT)

NCTR

0.0

-20

100

Ta - Ambient Temperature - °C

IF - LED Current - mA

Figure 12. Propagation delay versus collector load

resistor

Figure 9. Normalized non-saturated and saturated

CTR at T =85°C versus LED current

1000

100

2.5

2.0

1.5

1.0

1.5

Ta = 25°C, IF = 10mA

Vcc = 5V, Vth = 1.5V

Normalized to:

Vce = 10V, IF = 10mA, Ta = 25°C

CTRce(sat) Vce = 0.4V

tPLH

1.0

0.5

Ta = 85°C

NCTR(SAT)

tPHL

NCTR

IF - LED Current - mA

0.0

100

RL - Collector Load Resistor - KΩ

ILD/Q1/2/5

5–4

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