IM111-X6Q1B [INFINEON]
CIPOS™ Nano 600 V, 2 A full-bridge Intelligent Power Module;
| 型号： | IM111-X6Q1B |
| 厂家： | 
Infineon |
| 描述： | CIPOS™ Nano 600 V, 2 A full-bridge Intelligent Power Module |
| 文件： | 总19页 (文件大小：1332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IM111-X6Q1B
CIPOS™ Nano
IM111-X6Q1B
Description
IM111-X6Q1B is an H-bridge integrated power module (IPM) designed for advanced appliance motor drive
applications. This advanced low profile IPM offers a combination of Infineon’s low RDS(ON) CoolMOS ™ technology
and the industry benchmark high voltage, rugged driver in a small 12x10mm QFN package.
Features
Integrated gate drivers and bootstrap
functionality
Overcurrent protection & fault reporting
Low 0.28Ω RDS(on), 600V CoolMOS™
Under-voltage lockout for both channels
Shoot through protection
Matched propagation delay for all channels
Optimized dv/dt for loss and EMI trade offs
Advanced input filter
3.3V input logic compatible
Motor power range 80-200W
1500VRMS min isolation
Potential Applications
Linear refrigerator compressors
High efficiency single-phase motor drives
DC-AC inverters
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Table 1
Part Ordering Table
Standard Pack
Base Part Number Package Type
Orderable Part Number
Form
Quantity
IM111-X6Q1B
QFN 12x10mm
Tape and Reel
2000
IM111-X6Q1BAUMA1
Please read the Important Notice and Warnings at the end of this document
Final Datasheet
www.infineon.com
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
Table of contents
Description……………………………………………………………………………………………………………..1
Features………………………………………………………………………………………………………………...1
Potential Applications..................................................................................................................... 1
Product Validation.......................................................................................................................... 1
Table of contents............................................................................................................................ 2
1
Internal Electrical Schematic .......................................................................................... 3
2
2.1
2.2
Pin Configuration........................................................................................................... 4
Pin Assignment........................................................................................................................................4
Pin Descriptions.......................................................................................................................................5
3
Absolute Maximum Rating .............................................................................................. 6
Module .....................................................................................................................................................6
Inverter ....................................................................................................................................................6
Control .....................................................................................................................................................6
3.1
3.2
3.3
4
5
Thermal Characteristics ................................................................................................. 7
Recommended Operating Conditions............................................................................... 8
6
6.1
6.2
Static Parameters .......................................................................................................... 9
Inverter ....................................................................................................................................................9
Control .....................................................................................................................................................9
7
7.1
7.2
Dynamic Parameters.....................................................................................................10
Inverter ..................................................................................................................................................10
Control ...................................................................................................................................................10
8
9
Thermistor Characteristics ............................................................................................11
Qualification Information ..............................................................................................12
10
10.1
10.2
Diagrams & Tables ........................................................................................................13
Input-Output Logic Table......................................................................................................................13
Switching Time Definitions ...................................................................................................................13
11
Application Guide .........................................................................................................14
Typical Application Schematic .............................................................................................................14
Performance Charts ..............................................................................................................................14
–Vs Immunity.........................................................................................................................................15
11.1
11.2
11.3
12
Package Outline ...........................................................................................................16
Revision History ............................................................................................................................18
Revision 1.0
2019-12-12
2
Final Datasheet
CIPOS™ Nano
IM111-X6Q1B
1
Internal Electrical Schematic
6~8, 32~35 V+
Integrated in HVIC
9
VB1
10 VDD1
11 HIN1
12 LIN1
Half-Bridge
HVIC
19~25 VS1
17~18 VR1
13 ITRIP1
14 RFE1
15, 39 COM1
16 NTC
36 VB2
37 VDD2
1 HIN2
Half-Bridge
HVIC
26~28, 31 VS2
29~30 VR2
2 LIN2
3 ITRIP2
4 RFE2
5, 38 COM2
Figure 1
Internal electrical schematic.
3
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
2
Pin Configuration
2.1
Pin Assignment
20 21 22
19
12 13 14 15 16 17 18
23
11
39
10
24
25
9
26
27
8
7
6
28
5
38
4
29
30
3
2
1
31
35
34
33
32
37
36
Figure 2
Table 2
Module pinout
Pin Assignment
Pin
1
2
3
4
5
6-8
9
10
11
Name
HIN2
LIN2
ITRIP2
RFE2
COM2
V+
Description
Logic Input for High Side Gate Driver (Active High)
Logic Input for Low Side Gate Driver (Active High)
Over Current Protection
Fault Clear, Fault Reporting & Enable
Logic Ground
DC Bus Voltage Positive
High Side Floating Supply (Bootstrap Cap Connection +)
Low Side Control Supply
Logic Input for High Side Gate Driver (Active High)
Logic Input for Low Side Gate Driver (Active High)
Over Current Protection
Fault Clear, Fault Reporting & Enable
Logic Ground
Negative Temperature Coeffient Thermistor
Low Side Source
Phase Output
VB1
VDD1
HIN1
LIN1
ITRIP1
RFE1
COM1
NTC
VR1
VS1
VS2
VR2
VS2
V+
VB2
VDD2
COM2
COM1
12
13
14
15
16
17-18
19-25
26-28
29-30
31
32-35
36
37
Phase Output
Low Side Source
Phase Output (Bootstrap Cap Connection -)
DC Bus Voltage Positive
High Side Floating Supply (Bootstrap Cap Connection +)
Low Side Control Supply
38
39
Logic Ground
Logic Ground
4
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
2.2
Pin Descriptions
LIN and HIN (Low side and high side control pins)
= 7.7V. This prevents the external power switches
from critically low gate voltage levels during on-
state and therefore from excessive power
dissipation.
These pins are positive logic and they are
responsible for the control of the integrated
CoolMOS. The Schmitt-trigger input thresholds of
them are such to guarantee LSTTL and CMOS
compatibility down to 3.3V controller outputs. Pull-
down resistor of about 800k is internally provided
to pre-bias inputs during supply start-up and an ESD
diode is provided for pin protection purposes. Input
Schmitt-trigger and noise filter provide beneficial
noise rejection to short input pulses.
VB and VS (High side supplies)
VB to VS is the high side supply voltage. The high side
circuit can float with respect to COM following the
external high side power device source voltage.
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
The noise filter suppresses control pulses which are
below the filter time tFILIN. The filter acts according to
Figure 4.
The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 8.9V and a falling
threshold of VBSUV- = 7.7V.
CIPOSTM
VS provide a high robustness against negative
voltage in respect of COM. This ensures very stable
designs even under rough conditions.
Schmitt-Trigger
HINx
LINx
INPUT NOISE
FILTER
0.8M
SWITCH LEVEL
COM
VIH; VIL
VR (Low side source)
Figure 3
Input pin structure
The low side source is available for current
measurements of each phase leg. It is
recommended to keep the connection to pin COM as
short as possible in order to avoid unnecessary
inductive voltage drops.
a)
b)
HIN
tFILIN
tFILIN
HIN
LIN
LIN
high
HO
LO
HO
LO
low
VS (High side source and low side drain)
Figure 4
Input filter timing diagram
This pin is motor input pin.
The integrated gate drive provides additionally a
shoot through prevention capability which avoids
the simultaneous on-state of the high-side and low-
side switch of the same inverter phase. A minimum
deadtime insertion of typically 300ns is also
provided by driver IC, in order to reduce cross-
conduction of the external power switches.
V+ (Positive bus input voltage)
The high side CoolMOS devices are connected to the
bus voltage. It is noted that the bus voltage does not
exceed 450V.
ITRIP (Over current protection)
Analog input for over-current shutdown. When
active, ITRIP shuts down outputs and activates RFE
low.
VDD, COM (Low side control supply and reference)
VDD is the control supply and it provides power both
to input logic and to output power stage. Input logic
is referenced to COM ground.
RFE (Fault clear, fault reporting and enable)
Integrated fault reporting function, fault clear timer
and external enable pin. This pin has negative logic
and an open-drain output.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 8.9V is present.
The IC shuts down all the gate drivers power
outputs, when the VDD supply voltage is below VDDUV-
5
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
3
Absolute Maximum Ratings
3.1
Module
Table 3
Parameter
Symbol
TSTG
TC
Condition
Units
°C
Storage temperature
-40 ~ 150
-40 ~ 125
-40 ~ 150
1500
Operating case temperature
Operating junction temperature
Isolation voltage1
°C
TJ
°C
VISO
1min, RMS, f = 60Hz
V
1. Characterized, not tested at production
3.2
Inverter
Table 4
Parameter
Symbol Condition
Units
Max. blocking voltage
VDSS/VRRM
600
12
V
1
Output current based on RTH(J-C)B
Peak output current
IO
TC = 25°C, DC
A
A
A
W
IOP
IOA
P
TC = 25°C, pulsed current
TA = 25°C, DC
20
Output current based on RTH(J-A)
2
Peak power dissipation per MOSFET
TC = 25°C
175
1. Limited by wire bonding current capability inside the package
3.3
Control
Table 5
Parameter
Symbol
VDD
Condition
Units
Low side control supply voltage
Input voltage LIN, HIN
-0.3 ~ 20
-0.3 ~ VDD
-0.3 ~ 20
V
V
V
VIN
High side floating supply voltage
(VB reference to VS)
VBS
6
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
4
Thermal Characteristics
Table 6
Parameter
Symbol Conditions
Min.
Typ.
Max.
Units
Single MOSFET thermal
resistance, junction-case
(bottom)
RTH(J-C)B
Measures either high
side or low side
device
-
0.6
-
°C/W
Thermal resistance,
RTH(J-A)
-
12
-
°C/W
junction-ambient(1)
(1) The junction to ambient thermal resistance is simulated based on standard JESD51-5/7 using a FR4
2s2p board with device mounted and power evenly distributed to four power MOSFETs.
7
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
5
Recommended Operating Conditions
Table 7
Parameter
Symbol
V+
Min.
-
Typ.
Max.
Units
V
Positive DC bus input voltage
Low side control supply voltage
High side floating supply voltage
Input voltage
-
-
-
-
6
-
-
-
450
VDD
13.5
12.5
0
16.5
V
VBS
17.5
V
VIN
5
-
V
PWM carrier frequency
External dead time between HIN & LIN
Voltage between COM and VR
Minimum input pulse width
FPWM
DT
-
kHz
µs
V
1
-
VCOMR
-5
5
-
PWIN(ON)
,
0.5
µs
PWIN(OFF)
8
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
6
Static Parameters
6.1
Inverter
(VDD-COM) = (VB - VS) = 15 V. TC = 25°C unless otherwise specified.
Table 8
Parameter
Symbol Conditions
Min.
Typ.
0.28
0.59
20
Max.
Units
Ω
Drain to Source ON Resistance RDS(on)
ID = 0.5A
-
-
-
-
0.31
Ω
ID= 0.5A, TJ = 150℃
VIN = 0V, V+ = 600V
-
-
-
Drain source leakage current
Diode forward voltage
IDSS
µA
µA
VIN = 0V, V+ = 600V, TJ
= 150°C
40
VF
IF = 0.5A
-
-
0.69
0.48
-
-
V
V
IF = 0.5A, TJ = 150℃
6.2
Control
(VDD-COM) = (VB - VS) = 15 V. TC = 25°C unless otherwise specified. The VIN and IIN are referenced to COM and are
applicable to all six channels. The VDDUV is referenced to COM. The VBSUV is referenced to VS.
Table 9
Parameter
Symbol
VIN,TH+
VIN,TH-
VRFE+
Min.
2.2
-
Typ.
Max.
-
Units
Logic “1” input voltage (LIN, HIN)
Logic “0” input voltage (LIN, HIN)
RFE positive going threshold
RFE negative going threshold
-
V
V
V
V
V
-
0.8
2.5
-
-
-
VRFE-
0.8
8
-
VDD/VBS supply undervoltage, positive going
threshold
VDD,UV+
,
8.9
9.8
VBS,UV+
VDD/VBS supply undervoltage, negative going
threshold
VDD,UV-
VBS,UV-
,
6.9
-
7.7
1.2
8.5
-
V
V
VDD/VBS supply undervoltage lock-out
hysteresis
VDDUVH
VBSUVH
,
Quiescent VBS supply current
Quiescent VDD supply current
Input bias current VIN=4V for LIN,HIN
Input bias current VIN=0V for LIN, HIN
Input bias current VIN = 4V for RFE
Input bias current VIN = 4V for ITRIP
ITRIP positive going threshold
ITRIP negative going threshold
ITRIP input hysteresis
IQBS
-
45
70
3.0
20
2
µA
mA
µA
µA
µA
µA
V
IQCC
1.0
1.7
5
IIN+
-
IIN-
-
-
IIN,RFE+
ITRIP+
VIT,TH+
VIT,TH-
VIT,HYS
RBS
-
0
1
-
5
20
0.525
-
0.475
0.500
0.43
0.07
200
50
-
-
-
-
V
-
V
Bootstrap resistance
-
Ω
RFE low on resistance
RRFE
100
Ω
9
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
7
Dynamic Parameters
7.1
Inverter
(VDD-COM) = (VB - VS) = 15 V. TC = 25°C unless otherwise specified.
Table 10
Parameter
Symbol Conditions
Min.
Typ.
Max.
Units
µs
Input to output turn-on
propagation delay
TON
-
0.88
-
ID = 0.5A, V+ = 300V
TR
ns
ns
µs
Turn-on rise time
-
-
-
37
-
-
-
TC(on)
TOFF
Turn-on switching time
167
0.92
Input to output turn-off
propagation delay
ID = 0.5A, V+ = 300V
TF
ns
ns
µs
Turn-off fall time
-
-
-
186
192
0.52
-
-
-
TC(off)
TEN
Turn-off switching time
RFE low to six switch turn-off
propagation delay
VIN = 0 or VIN = 5V, VEN
5V
=
ITRIP to six switch turn-off
propagation delay
TITRIP
-
900
-
ns
µJ
Turn-on switching energy
Turn-off switching energy
EON
ID = 0.5A, V+ = 300V,
VDD = 15V, L = 9mH
-
-
-
-
-
-
-
-
54
11
7
-
-
-
-
-
-
-
-
EOFF
Diode reverse recovery energy EREC
ns
Diode reverse recovery time
Turn-on switching energy
Turn-off switching energy
TRR
121
126
12
10
EON
EOFF
ID = 0.5A, V+ = 300V,
VDD = 15V, L = 9mH, TJ
= 150°C
µJ
Diode reverse recovery energy EREC
Diode reverse recovery time TRR
ns
203
7.2
Control
(VDD-COM) = (VB - VS) = 15V. TC = 25°C unless otherwise specified.
Table 11
Parameter
Symbol Conditions
Min.
Typ.
300
500
660
Max.
Units
ns
TFIL,IN
TFIL,EN
TFLT
Input filter time (HIN, LIN, ITRIP
Input filter time (RFE)
)
VIN = 0 or VIN = 5V
-
-
-
-
-
-
VRFE = 0 or VRFE = 5V
ns
ITRIP to Fault propagation
delay
VIN = 0 or VIN = 5V, VITRIP
= 5V
ns
Internal injected dead time
TDT,GD
MT
VIN = 0 or VIN = 5V
-
-
300
-
-
ns
ns
Matching propagation delay
time (on and off) for same
phase high-side and low-side
External dead time >
1µs
50
10
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
8
Thermistor Characteristics
Table 12
Parameter
Resistance
Resistance
Symbol
R25
Conditions
Min.
44.65
1.27
-
Typ.
47
Max.
49.35
1.51
-
Units
kΩ
TC = 25°C, ±5% tolerance
TC = 125°C
R125
B
1.39
4006
kΩ
B-constant
(25/100)
±1% tolerance
K
Temperature
Range
-20
-
150
°C
+3.3V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
REXT
VTH
R
Rmin
[kΩ]
Rtyp
[kΩ]
Rmax
[kΩ]
max
TTH [℃]
typ
50
15.448
10.483
7.245
5.092
3.648
2.653
1.957
1.462
1.269
16.432
11.194
7.765
5.477
3.937
2.872
2.125
1.592
1.384
17.436
11.924
8.302
5.876
4.237
3.101
2.301
1.729
1.505
min
60
70
80
90
100
110
120
125
0.0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Thermistor Temperature TTH (°C)
Figure 5
Thermistor resistance – temperature curve, for REXT=9.76kΩ, and thermistor resistance
variation with temperature.
11
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
9
Qualification Information
Table 13
Moisture sensitivity level MSL3
RoHS Compliant
ESD
Yes
CDM
HBM
±2kV, Class C3, per ANSI/ESDA/JEDEC JS-002 standard
±2kV, Class 2, per ANSI/ESDA/JEDEC JESD22-A114F standard
12
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
10
Diagrams & Tables
10.1
Input-Output Logic Table
V+
Ho
Lo
HIN
Gate
Driver
IC
U/V/W
LIN
Figure 6
Module block diagram
Table 14
RFE
1
ITRIP
0
HIN
1
LIN
0
U,V,W
V+
0
1
0
0
1
1
0
0
0
‡
1
0
1
1
‡
1
1
x
x
‡
0
x
x
x
‡
‡ Voltage depends on direction of phase current
10.2
Switching Time Definitions
HIN
LIN
2.1V
0.9V
trr
toff
ton
10%
10%
iD
90%
90%
tf
tr
10%
10%
10%
vDS
tc(on)
tc(off)
Switching times definition
Figure 7
13
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
11
Application Guide
11.1
Typical Application Schematic
IM111-X6Q1B
VBUS
VB1
VB2
VDD1
VDD2
XTAL0
HO
HO
PWMUL
LIN1
HIN1
LIN2
HIN2
PWMUH
XTAL1
PWMWL
PWMWH
RFE1
RFE2
U
V
+
VS1
LO
VS2
LO
Fault/
Shutdown
-
NTC
Vtemp
ITRIP1
COM1
ITRIP2
COM2
uP
AIN1
IFB+
IFB-
Power
Supply
VDD
VDDCAP
VSS
IFBO
Figure 8
Application schematic
11.2
Performance Charts
2.5
V+ = 300V, VDD=VBS=15V,
TJ≤150°C, MI=0.8, PF=0.8,
Bipolar SPWM, RTH(J-A)=12°C/W
2
1.5
1
FPWM=6kHz
FPWM=16kHz
0.5
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
PCB Ambient Temperature [℃]
Figure 9
Max current SOA
14
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
11.3
–Vs Immunity
Figure 10
–Vs immunity
15
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
12
Package Outline
Dimensions in mm
16
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
Note: Exposed tie bars on side of the module.
T1 is internally connected to pin 37
T2 is internally connected to pin 15
T3 is internally connected to pin 12
T4 is internally connected to pin 31
T5 is internally connected to pin 5
17
Final Datasheet
Revision 1.0
2019-12-12
CIPOS™ Nano
IM111-X6Q1B
Revision History
Major changes since the last revision
Page or Reference Description of change
18
Final Datasheet
Revision 1.0
2019-12-12
Trademarks
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
Edition 2019-12-12
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
Published by
Infineon Technologies AG
(www.infineon.com).
With respect to any examples, hints or any typical
81726 München, Germany
values stated herein and/or any information Please note that this product is not qualified
regarding the application of the product, Infineon according to the AEC Q100 or AEC Q101 documents
Technologies hereby disclaims any and all of the Automotive Electronics Council.
warranties and liabilities of any kind, including
© 2019 Infineon Technologies AG.
All Rights Reserved.
without limitation warranties of non-infringement of
intellectual property rights of any third party.
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dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
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SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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