IM241-M6S1J [INFINEON]
CIPOS™ Micro 600 V, 4 A three-phase intelligent power module (low EMI);
| 型号： | IM241-M6S1J |
| 厂家： | 
Infineon |
| 描述： | CIPOS™ Micro 600 V, 4 A three-phase intelligent power module (low EMI) |
| 文件： | 总26页 (文件大小：922K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IM241 Series
CIPOS™ Micro IPM 600 V, 4 A
IM241 Series
Description
IM241-M6 is a 3-phase Intelligent Power Module (IPM) designed for high-efficiency appliance motor drives such as
fans and pumps. This IPM is available in both fast and slow speeds for low loss and low EMI operation respectively.
Features
•
600V 3-phase inverter including gate drivers &
bootstrap function
•
Reverse Conducting IGBT Gen 2 (RCD2) optimized
for motor drives
•
•
•
•
Temperature monitor
Accurate overcurrent shutdown (±5%)
Fault reporting and programmable fault clear
Advanced input filter with shoot-through
protection
•
•
Optimized dV/dt for loss and EMI trade offs
Open-emitter for single and leg-shunt current
sensing
SOP 29x12
DIP 29x12
•
•
3.3V logic compatible
Isolation 2000VRMS, 1min
Potential Applications
•
Fans
•
Pumps
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Table 1 Product Information
Standard Pack
Form
Base Part Number
Package Type
Quantity
IM241-M6T2y
IM241-M6S1y
DIP 29x12
SOP 29x12
Tube
240
240
500
Tube
Tape & Reel
y = B (fast speed for low losses; for x = S, M, L) or J (slow speed for low EMI; for x = S, M)
Final Datasheet
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Please read the Important Notice and Warnings at the end of this document
Revision 1.6
2022-06-26
CIPOS™ Micro
IM241 Series
Table of contents
Table of contents
Description1
Features
1
Potential Applications..................................................................................................................... 1
Product validation.......................................................................................................................... 1
Table of contents............................................................................................................................ 2
1
Internal Electrical Schematic .......................................................................................... 3
2
2.1
2.2
Pin Configuration........................................................................................................... 4
Pin Assignment........................................................................................................................................4
Pin Descriptions.......................................................................................................................................5
3
Absolute Maximum Rating .............................................................................................. 7
Module .....................................................................................................................................................7
Inverter ....................................................................................................................................................7
Control............................................................................................................................................................7
3.1
3.2
3.3
4
5
Thermal Characteristics ................................................................................................. 8
Recommended Operating Conditions............................................................................... 9
6
6.1
6.2
Static Parameters .........................................................................................................10
Inverter ..................................................................................................................................................10
Control...................................................................................................................................................10
7
7.1
7.2
Dynamic Parameters.....................................................................................................12
Inverter ..................................................................................................................................................12
Control...................................................................................................................................................13
8
Thermistor Characteristics ............................................................................................14
Mechanical Characteristics and Ratings...........................................................................15
Qualification Information ..............................................................................................16
9
10
11
Diagrams & Tables ........................................................................................................17
TC Measurement Point...........................................................................................................................17
Backside Curvature Measurement Points ............................................................................................17
Input-Output Logic Table......................................................................................................................18
Switching Time Definitions ...................................................................................................................19
11.1
11.2
11.3
11.4
12
Application Guide .........................................................................................................20
Typical Application Schematic .............................................................................................................20
TJ vs TTH ..................................................................................................................................................21
–VS Immunity .........................................................................................................................................22
12.1
12.2
12.3
13
13.1
13.2
Package Outline ...........................................................................................................23
DIP 29x12 ...............................................................................................................................................23
SOP 29x12 ..............................................................................................................................................24
14
Revision History ...........................................................................................................25
Final Datasheet
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2
Revision 1.6
2022-06-26
CIPOS™ Micro
IM241 Series
Internal Electrical Schematic
1
Internal Electrical Schematic
1 VSS
17
P
2
3
4
5
VB(U)
VDD1
HIN (U)
LIN (U)
Half-Bridge
HVIC
18 U/VS(U)
19 NU
6
7
8
9
RFE
VB(V)
VDD2
20 NV
HIN (V)
Half-Bridge
HVIC
21 V/VS(V)
10 LIN (V)
11 VTH
12 VB(W)
13 VDD3
22 NW
14 HIN (W)
15 LIN (W)
Half-Bridge
HVIC
23 W/VS(W)
16 ITRIP
Figure 1
Internal electrical schematic.
Final Datasheet
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Revision 1.6
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CIPOS™ Micro
IM241 Series
Pin Configuration
2
Pin Configuration
2.1
Pin Assignment
e
Figure 2
Module pinout
Pin Assignment
Table 2
Pin
1
Name
VSS
Description
Logic ground
2
VB(U)
VDD1
U-phase high-side floating IC supply voltage
Low-side control supply 1
3
4
HIN(U)
LIN(U)
RFE
U-phase high-side gate driver input
U-phase low-side gate driver input
RCIN / Fault / Enable
5
6
7
VB(V)
VDD2
V-phase high-side floating IC supply voltage
Low-side control supply 2
8
9
HIN(V)
LIN(V)
VTH
V-phase high-side gate driver input
V-phase low-side gate driver input
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Thermistor output
VB(W)
VDD3
W-phase high-side floating IC supply voltage
Low-side control supply 3
HIN(W)
LIN(W)
ITRIP
W-phase high-side gate driver input
W-phase low-side gate driver input
Over-current protection input
P
DC bus voltage positive
U/VS(U)
NU
Motor U-phase output, U-phase high-side floating IC supply offset voltage
U-phase low-side emitter
NV
U-phase low-side emitter -phase low-side emitter
Motor V-phase output, V-phase high-side floating IC supply offset voltage
W-phase low-side emitter
V/VS(V)
NW
W/VS(W)
Motor W-phase output, W-phase high-side floating IC supply offset voltage
Final Datasheet
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Revision 1.6
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CIPOS™ Micro
IM241 Series
Pin Configuration
2.2
Pin Descriptions
HIN(U,V,W) and LIN(U,V,W) (Low side and high side
control pins)
The IC shuts down all the gate drivers power outputs,
when the VDD supply voltage is below VDDUV- = 10.9V.
This prevents the external power switches from
critically low gate voltage levels during on-state and
therefore from excessive power dissipation.
These pins are positive logic and they are
responsible for the control of the integrated IGBT.
The Schmitt-trigger input thresholds of them are
such to guarantee LSTTL and CMOS compatibility
down to 3.3V controller outputs. Pull-down resistor
of about 800k is internally provided to pre-bias
inputs during supply start-up and an ESD diode is
provided for pin protection purposes. Input
Schmitt-trigger and noise filter provide beneficial
noise rejection to short input pulses.
VB (U,V,W) and VS (U,V,W) (High side supplies)
VB to VS is the high side supply voltage. The high side
circuit can float with respect to VSS following the
external high side power device source voltage.
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
The noise filter suppresses control pulses which are
below the filter time TFILIN. The filter acts according
to Figure 4.
The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 11.1V and a falling
threshold of VBSUV- = 10.9V.
CIPOSTM
VS(U,V,W) provide
a high robustness against
Schmitt-Trigger
negative voltage in respect of VSS. This ensures very
stable designs even under rough conditions.
HINx
LINx
INPUT NOISE
FILTER
0.8M
SWITCH LEVEL
COM
VIH; VIL
NU, NV, NW (Low side emitters)
Figure 3
Input pin structure
The low side emitters are available for current
measurements of each phase leg. It is
recommended to keep the connection to pin VSS as
short as possible in order to avoid unnecessary
inductive voltage drops.
a)
b)
HIN
tFILIN
tFILIN
HIN
LIN
LIN
high
HO
LO
HO
LO
low
VTH (Thermistor output)
Figure 4
Input filter timing diagram
A UL certified NTC resistor is integrated in the
module with one terminal of the chip connected to
VSS and the other to VTH. When pulled up to a rail
voltage such as VDD or 3.3V by a resistor, the VTH pin
provides an analog voltage signal corresponding to
the temperature of the thermistor.
The integrated gate drive provides additionally a
shoot through prevention capability which avoids
the simultaneous on-state of the high-side and low-
side switch of the same inverter phase. A minimum
deadtime insertion of typically 300ns is also
provided by driver IC, in order to reduce cross-
conduction of the external power switches.
RFE (RCIN / Fault / Enable)
The RFE pin combines 3 functions in one pin: RCIN or
RC-network based programmable fault clear timer,
fault output and enable input.
VDDX, VSS (Low side control supply and reference)
VDD is the control supply and it provides power both
to input logic and to the output power stage. Input
logic is referenced to VSS ground.
The RFE pin is normally connected to an RC network
on the PCB per the schematic in Figure 5. Under
normal operating conditions, RRCIN pulls the RFE pin to
3.3V, thus enabling all the functions in the IPM. The
microcontroller can pull this pin low to disable the
IPM functionality. This is is the Enable function.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 11.1V is present.
Final Datasheet
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Revision 1.6
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CIPOS™ Micro
IM241 Series
Pin Configuration
VRFE(t) = 3.3V * e-t/RC < VRFE-
+3.3V
CRCIN < 350ns / ( - ln (VRFE- / 3.3V) * RRFE_ON
)
Consider VRFE- of 0.8V and RRFE_ON of 50ohm, CRCIN
should be less than 5nF. It is also suggested to use a
RRCIN of between 0.5MΩ and 2MΩ.
RRCIN
To Microcontroller
6 RFE
CRCIN
Input
Noise
filter
HIN
Deadtime &
Shoot-Through
Prevention
Input
Noise
Figure 5
Typical PCB circuit connected to the
RFE pin
LIN
filter
VDD
Under-
voltage
COM
The Fault function allows the IPM to report a Fault
condition to the microncontroller by pulling the RFE
pin low in one of two situations. The first is an under-
voltage condition on VDD and the second is when the
detection
ITRIP
ITRIP
Noise
filter
ITRIP pin sees a voltage rising above VIT,TH+
.
The programmable fault clear timer function
provides a means of automatically re-enabling the
module operation a preset amount of time (TFLT-CLR
)
Noise
filter
RFE
after the fault condition has disappeared. Figure 6
shows the RFE-related circuit block diagram inside
the IPM.
The length of TFLT-CLR can be determined by using
the formula below.
VRFE(t) = 3.3V * (1 – e-t/RC
)
Figure 6
RFE internal circuit structure
TFLT-CLR = -RRCIN * CRCIN * ln(1-VRFE +/3.3V)
U/VS(U) , V/VS(V), W/VS(W) (High side emitter and
low side collector)
For example, if RRCIN is 1.2MΩ and CRCIN is 1nF, the TFLT-
CLR is about 1.7ms with VRFE + of 2.2V. It is also important
to note that CRCIN needs to be minimized in order to
make sure it is fully discharged in case of over current
event.
These pins are connected to motor U, V, W input pins.
P (Positive bus input voltage)
Since the ITRIP pin has a 500ns input filter, it is
appropriate to ensure that CRCIN will be discharged
below VRFE- by the open-drain MOSFET, after 350ns.
Therefore, the max CRCIN can be calculated as:
The high side IGBTs are connected to the bus voltage.
It is noted that the bus voltage should not exceed
450V.
Final Datasheet
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Revision 1.6
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CIPOS™ Micro
IM241 Series
Absolute Maximum Rating
3
Absolute Maximum Rating
3.1
Module
Table 3
Parameter
Symbol
TSTG
TC
Condition
Units
°C
Storage temperature
-40 ~ 150
-40 ~ 125
-40 ~ 150
2000
Operating case temperature
Operating junction temperature
Isolation test voltage
°C
°C
V
TJ
VISO
1min, RMS, f = 60Hz
3.2
Inverter
Table 4
IM241-M6
Parameter
Symbol
VCES/VRRM
IO
Condition
Units
Max. blocking voltage
Output current
600
4
V
A
TC = 25°C
Peak output current
IOP
TC = 25°C, tp < 1ms
TC = 25°C
6
A
Peak power dissipation per IGBT
Short circuit withstand time
Ptot
13
3
W
µs
TSC
VDD=15V, VDC ≤400V, TJ=150°C
Allowed number of short
circuits: <1000, time between
short circuit: ≥ 1s
3.3
Control
Table 5
Parameter
Symbol
VDD
Condition
Units
Low side control supply voltage
Input voltage
-0.3 ~ 20
-0.3 ~ VDD
-0.3 ~ 20
V
V
V
VIN
LIN, HIN,ITRIP,RFE
High side floating supply voltage
(VB reference to VS)
VBS
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CIPOS™ Micro
IM241 Series
Thermal Characteristics
4
Thermal Characteristics
Table 6
IM241-M6
Parameter
Symbol Conditions
Min.
Typ.
9.84
Max.
Units
K/W
Single IGBT thermal
resistance, junction-
case
Low side V-
phase IGBT
RTH(J-C)
-
11.8
12.6
Single diode thermal
resistance, junction-
case
Low side V-
phase Diode
RTH(J-C)
-
10.5
K/W
Final Datasheet
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CIPOS™ Micro
IM241 Series
Recommended Operating Conditions
5
Recommended Operating Conditions
Table 7
Parameter
Symbol
P
Min.
Typ.
Max.
450
Units
Positive DC bus input voltage
Low side control supply voltage
High side floating supply voltage
Input voltage (LIN,HIN,ITRIP,RFE)
PWM carrier frequency
-
-
V
V
V
V
VDD
13.5
-
-
16.5
VBS
12.5
17.5
VIN
0
-
-
5
-
FPWM
DT
20
-
kHz
External dead time between HIN & LIN
Voltage between VSS and N(U,V,W)
Minimum input pulse width
1
-
µs
V
VCOMP
PWIN(ON)
-5
1
-
5
-
,
-
µs
PWIN(OFF)
Final Datasheet
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Revision 1.6
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CIPOS™ Micro
IM241 Series
Static Parameters
6
Static Parameters
6.1
Inverter
(VDD-VSS) = (VB - VS) = 15 V. TC = 25°C unless otherwise specified.
Table 8
IM241-M6 (B and J type)
Symbol Conditions
Parameter
Min.
Typ.
1.13
Max.
Units
V
Collector-to-emitter
saturation voltage
VCE(sat)
IC = 0.5A
-
-
-
-
-
-
IC = 1A
1.37
1.36
-
1.58
V
IC = 1A, TJ = 150℃
VIN = 0V, V+ = 600V
-
80
-
V
Collector emitter leakage
current of high side IGBT
ILKH
µA
µA
VIN = 0V, V+ = 600V, TJ
= 150°C
9.8
Diode forward voltage
VF
IC = 0.5A
-
-
-
1.18
1.38
1.34
-
1.60
-
V
V
V
IC = 1A
IC = 1A, TJ = 150℃
6.2
Control
(VDD- VSS) = (VB - VS) = 15 V. TC = 25°C unless otherwise specified. The VIN and IIN parameters are referenced to VSS
and are applicable to all six channels. The VDDUV parameters are referenced to VSS. The VBSUV parameters are
referenced to VS.
Table 9
Parameter
Symbol
Min.
2.2
Typ.
Max.
Units
VIN,TH+
-
-
V
Logic “1” input voltage (LIN, HIN)
VIN,TH-
-
-
0.8
V
V
Logic “0” input voltage (LIN, HIN)
VDD/VBS supply undervoltage, positive going
threshold
VDD,UV+
VBS,UV+
,
10.6
11.1
11.6
11.4
-
VDD/VBS supply undervoltage, negative going
threshold
VDD,UV-
,
10.4
-
10.9
0.2
V
V
VBS,UV-
VDD/VBS supply undervoltage lock-out
hysteresis
VDDUVH
VBSUVH
,
RFE positive going threshold
RFE negative going threshold
ITRIP positive going threshold
ITRIP negative going threshold
ITRIP input hysteresis
VRFE+
VRFE-
VIT,TH+
VIT,TH-
VIT,HYS
IQBS
-
1.9
1.1
0.500
0.430
0.07
-
2.2
V
V
0.8
-
0.475
0.525
V
-
-
-
-
-
-
-
-
V
V
Quiescent VBS supply current
Quiescent VDD supply current per channel
Input bias current VIN=5V for LIN, HIN
Input bias current VIN=5V for RFE
70
3
µA
mA
µA
µA
IQDD
-
IIN+
6.25
-
12.5
1
IIN,RFE+
10
Final Datasheet
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Revision 1.6
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CIPOS™ Micro
IM241 Series
Static Parameters
Parameter
Symbol
IITRIP+
RBS
Min.
Typ.
Max.
20
Units
µA
Input bias current VIN=5V for ITRIP
Bootstrap resistance
RFE low on resistance
-
5
-
-
200
34
-
Ω
RRFE
60
Ω
Final Datasheet
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Revision 1.6
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CIPOS™ Micro
IM241 Series
Dynamic Parameters
7
Dynamic Parameters
7.1
Inverter
(VDD- VSS) = (VB - VS) = 15 V. TC = 25°C unless otherwise specified.
Table 10
IM241-M6, B Type
Parameter
Symbol Conditions
Min.
Typ.
508
Max.
Units
Input to output turn-on
propagation delay
TON
-
-
ns
IC = 1A, V+ = 300V
TR
Turn-on rise time
-
-
-
7.44
52.6
737
-
-
-
ns
ns
ns
TC(on)
TOFF
Turn-on switching time
Input to output turn-off
propagation delay
IC = 1A, V+ = 300V
TF
TC(off)
TEN
Turn-off fall time
-
-
-
116
101
420
-
-
-
ns
ns
ns
Turn-off switching time
RFE low to six switch turn-off
propagation delay
VIN=0 or VIN=5V,
VRFE=5V
ITRIP to six switch turn-off
propagation delay
Turn-on slew rate
TITRIP
V+ = 300V,no cap
on RFE
-
1.3
-
-
µs
dV / dt IC = 1A, V+ = 300V,
VDD = 15V, L = 6mH
-
6.91
V/ns
Turn-on switching energy
Turn-off switching energy
Diode reverse recovery energy
Diode reverse recovery time
Turn-on switching energy
Turn-off switching energy
Diode reverse recovery energy
Diode reverse recovery time
EON
EOFF
EREC
TRR
IC = 1A, V+ = 300V,
VDD = 15V, L = 6mH,
mean of high side
and low side
-
19.9
13.6
16.0
84.2
42.4
21.2
29.8
129
-
-
-
-
-
-
-
-
µJ
-
-
-
-
-
-
-
ns
µJ
EON
EOFF
EREC
TRR
IC = 1A, V+ = 300V,
VDD = 15V, L = 6mH
TJ = 150°C, mean of
high side and low
side
ns
Table 11
IM241-M6, J Type
Parameter
Symbol Conditions
Min.
Typ.
Max.
Units
Input to output turn-on
propagation delay
TON
-
588
-
ns
IC = 1A, V+ = 300V
TR
Turn-on rise time
-
-
-
16.4
188
-
-
-
ns
ns
ns
TC(on)
TOFF
Turn-on switching time
Input to output turn-off
propagation delay
1220
IC = 1A, V+ = 300V
TF
Turn-off fall time
-
-
163
157
-
-
ns
ns
TC(off)
Turn-off switching time
Final Datasheet
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Revision 1.6
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CIPOS™ Micro
IM241 Series
Dynamic Parameters
Parameter
Symbol Conditions
Min.
Typ.
490
Max.
Units
RFE low to six switch turn-off
propagation delay
TEN
VIN=0 or VIN=5V,
VRFE=5V
-
-
ns
ITRIP to six switch turn-off
propagation delay
Turn-on slew rate
TITRIP
V+ = 300V,no cap
on RFE
-
1.3
1.6
-
-
µs
dV / dt IC = 1A, V+ = 300V,
VDD = 15V, L = 6mH,
mean of high side and
low side
-
V/ns
Turn-on switching energy
Turn-off switching energy
Diode reverse recovery energy
Diode reverse recovery time
Turn-on switching energy
Turn-off switching energy
Diode reverse recovery energy
Diode reverse recovery time
EON
EOFF
EREC
TRR
IC = 1A, V+ = 300V,
VDD = 15V, L = 6mH,
mean of high side
and low side
-
59.6
21.3
21.2
184
-
-
-
-
-
-
-
-
µJ
-
-
-
-
-
-
-
ns
µJ
EON
EOFF
EREC
TRR
IC = 1A, V+ = 300V,
VDD = 15V, L = 6mH
TJ = 150°C, mean of
high side and low
side
94.1
24.1
24.4
261
ns
7.2
Control
(VDD- VSS) = (VB - VS) = 15V. TC = 25°C unless otherwise specified.
Table 12
Parameter
Symbol Conditions
TFIL,IN
TFIL,ITRIP VIN=0 or VIN=5V
Min.
Typ.
Max.
Units
ns
Input filter time (HIN, LIN)
Input filter time (ITRIP)
Internal dead time
VIN = 0 or VIN = 5V
-
-
-
-
300
500
300
-
-
-
ns
DTIC
MT
VIN = 0 or VIN = 5V
-
ns
Matching propagation delay
time (on and off) for same
phase high-side and low-side
External dead time
> 500ns
50
ns
Final Datasheet
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CIPOS™ Micro
IM241 Series
Thermistor Characteristics
8
Thermistor Characteristics
Table 13
Parameter
Resistance
Resistance
Symbol
R25
Conditions
Min.
44.65
Typ.
47
Max.
49.35
Units
kΩ
TC = 25°C, ±5% tolerance
TC = 125°C
R125
B
1.27
-
1.39
1.51
-
kΩ
B-constant
(25/100)
±1% tolerance
4006
K
Temperature
Range
-20
-
150
°C
+3.3V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
REXT
VTH
R
Rmin
[kΩ]
Rtyp
[kΩ]
Rmax
[kΩ]
max
TTH [℃]
50
typ
15.448
10.483
7.245
5.092
3.648
2.653
1.957
1.462
1.269
16.432
11.194
7.765
5.477
3.937
2.872
2.125
1.592
1.384
17.436
11.924
8.302
5.876
4.237
3.101
2.301
1.729
1.505
min
60
70
80
90
100
110
120
125
0.0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Thermistor Temperature TTH (°C)
Figure 7
Thermistor resistance – temperature curve, for REXT=9.76kΩ, and thermistor resistance
variation with temperature.
Final Datasheet
www.infineon.com
14
Revision 1.6
2022-06-26
CIPOS™ Micro
IM241 Series
Mechanical Characteristics and Ratings
9
Mechanical Characteristics and Ratings
Table 14
Parameter
Symbol Conditions
Min.
550
Typ.
Max.
Units
Comparative Tracking
Index
CTI
-
-
V
Curvature of module
backside
BC
See Figure 9
-50
0.4
-
50
µm
Nm
Mounting Torque
M3 screw & washer,
thermal grease
0.8
1.2
τ
M3 screw & washer,
SIL-PAD 1500ST
-
-
0.6
3
1.0
-
Nm
g
Weight
W
Final Datasheet
www.infineon.com
15
Revision 1.6
2022-06-26
CIPOS™ Micro
IM241 Series
Qualification Information
10
Qualification Information
Table 15
UL Certification
UL-US-L252584-15-22508102-2
Moisture sensitivity level MSL3
(SOP 29 x 12 only)
RoHS Compliant
ESD
Yes
Human body model
Charge discharge model
1C
C3
Final Datasheet
www.infineon.com
16
Revision 1.6
2022-06-26
CIPOS™ Micro
IM241 Series
Diagrams & Tables
11
Diagrams & Tables
11.1
TC Measurement Point
10.15 mm
Figure 8
TC measurement point
11.2
Backside Curvature Measurement Points
Figure 9
Curvature measurement points
Final Datasheet
www.infineon.com
17
Revision 1.6
2022-06-26
CIPOS™ Micro
IM241 Series
Diagrams & Tables
11.3
Input-Output Logic Table
V+
HIN U,V,W
HO
(4,9,14)
LIN U,V,W
(5,10,15)
ITRIP
U,V,W
IC Driver
(18,21,23)
(16)
LO
RFE
(6)
Figure 10
Module block diagram
Table 16
RFE
ITRIP
HIN U,V,W
LIN U,V,W
U,V,W
1
1
1
1
1
0
0
0
0
0
1
x
1
0
0
1
x
x
0
1
0
1
x
x
V+
0
‡
‡
‡
‡
‡ Voltage depends on direction of phase current
Final Datasheet
www.infineon.com
18
Revision 1.6
2022-06-26
CIPOS™ Micro
IM241 Series
Diagrams & Tables
11.4
Switching Time Definitions
HINx
LINx
2.1V
0.9V
trr
toff
ton
10%
10%
iCx
90%
90%
tf
tr
10%
10%
10%
vCEx
tc(on)
tc(off)
Figure 11
Switching times definition
HIN(U, V, W)
LIN(U, V, W)
50%
50%
ITRIP
TFLT
50%
RFE
U, V, W
50%
50%
TITRIP
TFLT-CLR
Figure 12
ITRIP time waveform
50%
RFE
TEN
U, V, W
50%
Figure 13
Final Datasheet
www.infineon.com
Output disable timing diagram
19
Revision 1.6
2022-06-26
CIPOS™ Micro
IM241 Series
Application Guide
12
Application Guide
12.1
Typical Application Schematic
#10
P (26)
U (25)
(1) VS(U)
RC -IGBT
RC -IGBT
RC -IGBT
(2) VB(U)
VB1
HO1
VS(U)
(3) VS(V)
#4
(4) VB(V)
VB2
HO2
V (24)
VS(V)
3-ph AC
Motor
(5) VS(W)
(6) VB(W)
VB3
HO3
#3
W (23)
VS(W)
5 or 3.3V
15V
#8
VDD
VDD
VTH
#5
RC -IGBT
RC -IGBT
RC -IGBT
(9) VSS
VSS
LO1
LO2
LO3
#9
5 or 3.3V
(11) ITRIP
#2
ITRIP
NU(22)
NV (21)
NW (20)
Micro
Controller
(12) RFE
RFE
(13) HIN(U)
HIN(U)
#7
(14) HIN(V)
HIN(V)
#6
(14) HIN(W)
HIN(W)
Power
GND line
(15) LIN(U)
LIN(U)
(16) LIN(V)
LIN(V)
(17) LIN(W)
LIN(W)
#1
Figure 14
Application schematic
Final Datasheet
www.infineon.com
20
Revision 1.6
2022-06-26
CIPOS™ Micro
IM241 Series
Application Guide
12.2
TJ vs TTH
Figure 15
Typical TJ vs TTH correlation without heatsink (AN-2021-08 for reference)
Figure 16
Typical TJ vs TTH correlation with heatsink and Rthc-amb = 7 K/W (AN-2021-08 for reference)
Final Datasheet
www.infineon.com
21
Revision 1.6
2022-06-26
CIPOS™ Micro
IM241 Series
Application Guide
12.3
–VS Immunity
0
-10
-20
-30
-40
-50
-60
0
100
200
300
400
500
Time (ns)
Figure 17
Negative transient Vs SOA for integrated gate driver
Final Datasheet
www.infineon.com
22
Revision 1.6
2022-06-26
CIPOS™ Micro
IM241 Series
Package Outline
13
Package Outline
13.1
DIP 29x12
Dimensions in mm
Final Datasheet
www.infineon.com
23
Revision 1.6
2022-06-26
CIPOS™ Micro
IM241 Series
Package Outline
13.2
SOP 29x12
Dimensions in mm
Final Datasheet
www.infineon.com
24
Revision 1.6
2022-06-26
CIPOS™ Micro
IM241 Series
Revision History
14
Revision History
Major changes since the last revision
Page or Reference Description of change
Final Datasheet
www.infineon.com
25
Revision 1.6
2022-06-26
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
Edition 2022-06-26
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
Published by
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
Infineon Technologies AG
81726 München, Germany
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement of
intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
© 2022 Infineon Technologies AG.
All Rights Reserved.
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is subject to customer’s compliance with its
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