IM393-S6E [INFINEON]
CIPOS⢠Tiny IPM 600V/6A;型号: | IM393-S6E |
厂家: | Infineon |
描述: | CIPOS⢠Tiny IPM 600V/6A |
文件: | 总26页 (文件大小:1929K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IM393-S6E
CIPOS™ Tiny IPM 600V/6A
IM393-S6E
Description
IM393-S6E is a 6A, 600V Integrated Power Hybrid IC with Open Emitter pins for advanced Appliance Motor
Drives applications such as energy efficient fan and pumps. Infineon’s technology offers an extremely com-
pact, high performance AC motor-driver in a single isolated package to simplify design.
This advanced IPM is a combination of Infineon’s newest low VCE(on) Trench IGBT technology optimized for
best trade-off between conduction and switching losses and the industry benchmark 3 phase high voltage,
high speed driver (3.3V compatible) in a fully isolated thermally enhanced package. A built-in high precision
temperature monitor and over-current protection feature, along with the short-circuit rated IGBTs and inte-
grated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a dual in
line package with full transfer mold structure resolves isolation problems to heatsink.
Features
Integrated gate drivers and bootstrap function
Temperature monitor
Protection shutdown pin
Low VCE (on) Trench IGBT technology
Under voltage lockout for all channels
Matched propagation delay for all channels
3.3V Schmitt-triggered input logic
Cross-conduction prevention logic
Isolation 2000VRMS min and CTI > 600
Recognized by UL (File Number : E314539)
Tiny DIP
IM393-S6E
Potential applications
Washing machines
Air-conditioners
Refrigerators
Fans
Dishwashers
Low power motor drives
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Table1
Part Ordering Table
Standard Pack
Form
Base part number
Package Type
Quantity
DIP 34x15
DIP 34x15
DIP 34x15
30 Tubes
30 Tubes
30 Tubes
450
450
450
IM393-S6E
IM393-S6E2
IM393-S6E3
Final Datasheet
www.infineon.com
Please read the important Notice and Warnings at the end of this document
V2.0
2019-05-21
CIPOS™ Tiny
IM393-S6E
Table of Contents
Table of Contents
Description ....................................................................................................................................1
Features ........................................................................................................................................1
Potential Applications ....................................................................................................................1
Product validation .........................................................................................................................1
Table of Contents ...........................................................................................................................2
1
2
Internal Electrical Schematic ..................................................................................................3
Pin Configuration ..................................................................................................................4
2.1 Pin Assignment .................................................................................................................................................5
2.2 Pin Descriptions ...............................................................................................................................................6
3
Absolute Maximum Rating ......................................................................................................8
3.1 Module ..............................................................................................................................................................8
3 .2 Inverter .............................................................................................................................................................8
3 .3 Control ..............................................................................................................................................................8
4
5
6
Thermal Characteristics .........................................................................................................9
Recommended Operating Conditions ……………………………………………………………………...10
Static Parameters …………………………………………………………………………………………... 11
6.1 Inverter …………………………………………………………………………………………………………… 11
6 .2 Control ……………………………………………………………………………………………………………..11
7
Dynamic Parameters ............................................................................................................ 13
7.1 Inverter ...........................................................................................................................................................13
7 .2 Control ........................................................................................................................................................13
8
9
Thermistor Characteristics .................................................................................................... 14
Mechanical Characteristics and Ratings ..................................................................................15
10 Qualification Information ...................................................................................................... 16
11 Diagrams & Tables ................................................................................................................ 17
11.1 Tc Measurement Point ...................................................................................................................................17
11.2 Input-Output Logic Table ..............................................................................................................................17
11.3 Switching Time Definitions ............................................................................................................................18
12 Application Notes ................................................................................................................ 19
12.1 Typical Application Schematic .......................................................................................................................19
12.2 Performance Charts ........................................................................................................................................20
12.3 TJ vs TTH ...........................................................................................................................................................20
12.4 –VS Immunity ..................................................................................................................................................21
13 Package Outline ...................................................................................................................22
Revision History ........................................................................................................................... 24
2
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CIPOS™ Tiny
IM393-S6E
Internal Electrical Schematic
1
Internal Electrical Schematic
(35) P
(33) P
(1) P
(3) VS(W)
(4) VB(W)
VB3
VB2
HO3
VS3
(32) W
(31) V
(6) VS(V)
(7) VB(V)
HO2
VS2
(9) VS(U)
(10) VB(U)
VB1
HO1
VS1
(12) VDD
(13) VTH
VDD
(30) U
-t°
(14) COM
(15) COM
(16) ITRIP
(17) RFE
COM
VSS
LO3
LO2
LO1
ITRIP
RFE
(29) N(W)
(28) N(V)
(27) N(U)
(18) HIN(U)
HIN1
(19) HIN(V)
(20) HIN(W)
HIN2
HIN3
(21) LIN(U)
(22) LIN(V)
(23) LIN(W)
(24) N(W)
(25) N(V)
LIN1
LIN2
LIN3
(26) N(U)
Figure 1
Internal electrical schematic
3
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CIPOS™ Tiny
IM393-S6E
Pin Configuration
2
Pin Configuration
2.1
Pin Assignment
(1) P
(35) P
(3) VS(W)
(4) VB(W)
(6) VS(V)
(7) VB(V)
(9) VS(U)
(33) P
(10) VB(U)
(32) W
(12) VDD
(13) VTH
(14) COM
(15) COM
(31) V
(16) ITRIP
(17) RFE
(18) HIN(U)
(19) HIN(V)
(20) HIN(W)
(21) LIN(U)
(22) LIN(V)
(30) U
(29) N(W)
(23) LIN(W)
(28) N(V)
(27) N(U)
(24) N(W)
(25) N(V)
(26) N(U)
Figure 2
Pin configuration
4
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CIPOS™ Tiny
IM393-S6E
Pin Configuration
Table 2
Pin Assignment
Pin
Name
Description
1
( 2 )
3
P
N/A
Positive bus input voltage
None
VS(W)
VB(W)
N/A
W-phase high side floating supply offset voltage
W-phase high side floating supply voltage
None
4
( 5 )
6
VS(V)
VB(V)
N/A
V - phase high side floating supply offset voltage
V - phase high side floating supply voltage
None
7
( 8 )
9
VS(U)
VB(U)
N/A
U- phase high side floating supply offset voltage
U- phase high side floating supply voltage
None
10
( 11 )
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
( 34 )
35
( 36 )
VDD
VTH
COM
COM
ITRIP
RFE
Low side control supply
Temperature monitor
Low side control negative supply
Low side control negative supply
Over current protection input
RCIN / Fault / Enable
HIN(U)
HIN(V)
HIN(W)
LIN(U)
LIN(V)
LIN(W)
N(W)
N(V)
N(U)
N(U)
N(V)
N(W)
U
U-phase high side gate driver input
V-phase high side gate driver input
W-phase high side gate driver input
U-phase low side gate driver input
V-phase low side gate driver input
W-phase low side gate driver input
W-phase low side emitter
V-phase low side emitter
U-phase low side emitter
U-phase low side emitter
V-phase low side emitter
W-phase low side emitter
U-phase output
V
V-phase output
W
W-phase output
P
Positive bus input voltage
None
N/A
P
Positive bus input voltage
None
N/A
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IM393-S6E
Pin Descriptions
2.2
Pin Descriptions
VDD, COM (Low side control supply and reference)
HIN(U,V,W) and LIN(U,V,W) (High side and low
side control pins)
VDD is the control supply and it provides power both
to input logic and to output power stage. Input
logic is referenced to COM ground.
These pins are positive logic and they are
responsible for the control of the integrated
IGBT. The Schmitt-trigger input thresholds of
them are such to guarantee LSTTL and CMOS
compatibility down to 3.3V controller outputs.
Pull-down resistor of about 4k is internally
provided to pre-bias inputs during supply start-
up and an ESD diode is provided for pin
protection purposes. Input Schmitt-trigger and
noise filter provide beneficial noise rejection to
short input pulses.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 10.4V is present.
The IC shuts down all the gate drivers power
outputs, when the VDD supply voltage is below
VDDUV- = 9.4V. This prevents the external power
switches from critically low gate voltage levels
during on-state and therefore from excessive power
dissipation.
The noise filter suppresses control pulses which
are below the filter time TFILIN. The filter acts
according to Figure 4.
VB(U,V,W) and VS(U,V,W) (High side supplies)
VB to VS is the high side supply voltage. The high
side circuit can float with respect to COM following
the external high side power device emitter
voltage.
CIPOSTM TINY
Schmitt-Trigger
HIN(X)
LIN(X)
INPUT NOISE
FILTER
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
4k
SWITCH LEVEL
VIH; VIL
COM
The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 10.41V and a
falling threshold of VBSUV- = 9.4V.
Figure 3
Input pin structure
a)
b)
tFILIN
VS(U,V,W) provide a high robustness against negative
voltage in respect of COM. This ensures very stable
designs even under rough conditions.
tFILIN
HIN(X)
LIN(X)
HIN(X)
LIN(X)
high
N (U, V, W) (Low side emitters)
HOx
LOx
HOx
LOx
low
The low side emitters are available for current
measurements of each phase leg. It is
recommended to keep the connection to pin COM
as short as possible in order to avoid unnecessary
inductive voltage drops.
Figure 4
Input filter timing diagram
The integrated gate drive provides additionally a
shoot through prevention capability which avoids
the simultaneous on-state of the high-side and
low-side switch of the same inverter phase. A
minimum deadtime insertion of typically 275ns is
also provided by driver IC, in order to reduce
cross-conduction of the external power switches.
VTH (Thermistor)
A UL certified NTC is integrated in the module with
one terminal of the chip connected to COM and the
other to VTH. When pulled up to a rail voltage such
as VDD or 3.3V by a resistor, the VTH pin provides an
analog voltage signal corresponding to the
temperature of the thermistor.
6
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IM393-S6E
Pin Configuration
RFE (RCIN / Fault / Enable)
VRFE(t) = 3.3V * e-t/RC < VIN,TH-
The RFE pin combines 3 functions in one pin: RCIN or
RC-network based programmable fault clear timer,
fault output and enable input.
CRCIN < 350ns / ( - ln (VIN,TH- / 3.3V) * RRFE_ON
)
Consider VIN,TH- of 0.8V and RRFE_ON of 50ohm, CRCIN
should be less than 4.9nF. It is also suggested to
use a RRCIN of between 0.5MΩ and 2MΩ.
The RFE pin is normally connected to an RC network
on the PCB per the schematic in Figure 5. Under
normal operating conditions, RRCIN pulls the RFE pin
to 3.3V, thus enabling all the functions in the IPM.
The microcontroller can pull this pin low to disable
the IPM functionality. This is is the Enable function.
Input
Noise
filter
HIN(X)
Deadtime &
Shoot-Through
Prevention
Input
Noise
filter
LIN(X)
+3.3V
VDD
Under-
voltage
RRCIN
COM
detection
To Microcontroller
RFE
CRCIN
ITRIP
ITRIP
Noise
filter
Figure 5
Typical PCB circuit connected
to the RFE pin
The Fault function allows the IPM to report a Fault
condition to the microcontroller by pulling the RFE
pin low in one of two situations. The first is an under-
voltage condition on VDD and the second is when the
Noise
filter
RFE
ITRIP pin sees a voltage rising above VIT,TH+
.
The programmable fault clear timer function
provides a means of automatically re-enabling the
module operation a preset amount of time (TFLT-CLR
)
aꢀer the fault condition has disappeared. Figure 6
shows the RFE-related circuit block diagram inside
the IPM .
Figure 6
RFE internal circuit structure
The length of TFLT-CLR can be determined by using
the formula below.
U,V,W (High side emitter and low side
collector)
VRFE(t) = 3.3V * (1 – e-t/RC
)
These pins are motor U, V, W input pins.
TFLT-CLR = -RRCIN * CRCIN * ln(1-VIN,TH+/3.3V)
P (Positive bus input voltage)
For example, if RRCIN is 1.2MΩ and CRCIN is 1nF, the TFLT-
is about 1.7ms with VIN,TH+ of 2.5V. It is also
iCmLR portant to note that CRCIN needs to be minimized
in order to make sure it is fully discharged in case of
over current event.
The high side IGBTs are connected to the bus
voltage. It is noted that the bus voltage does not
exceed 450V.
Since the ITRIP pin has a 350ns input filter, it is
appropriate to ensure that CRCIN will be discharged
below VIN,TH- by the open-drain MOSFET, aꢀer 350ns.
Therefore, the max CRCIN can be calculated as:
7
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CIPOS™ Tiny
IM393-S6E
Absolute Maximum Rating
3
Absolute Maximum Rating
3.1
Module
Table 3
Parameter
Symbol
TJ
Conditions
IGBT, diode, HVIC
Value
-40 ~ 150
-40 ~ 125
-40 ~ 125
2000
Units
°C
Operating junction temperature
Operating case temperature
Storage temperature
°C
TC
°C
TSTG
VISO
V
Isolation test voltage
AC RMS, 1 minute, 60Hz
3.2
Inverter
Table 4
Parameter
Symbol
Conditions
IGBT, diode, HVIC
Value
Units
Blocking voltage
VCES
VPN
600
450
500
±6
V
V
V
A
DC –link supply voltage of P-N
DC –link supply voltage (surge) of P-N
Output current
Applied between P and N
Applied between P and N
VPN(surge)
IO
TC = 25°C, TJ < 150°C
TC = 25°C, TJ < 150°C, less than
1ms
Peak output current
IO(peak)
±9
A
Power dispassion per IGBT
Short Circuit withstand time
Ptot
TSC
18
3
W
TJ < 150°C, VDC =360V, VGE = 15V
μs
3.3
Control
Table 5
Parameter
Symbol
Conditions
Value
Units
Logic supply voltage
Input voltage
VDD
VIN
-0.3 ~ 20
-0.3 ~ 20
V
V
LIN, HIN, ITRIP, RFE
High side floating supply voltage
VBS(U,V,W)
-0.3 ~ 20
V
8
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CIPOS™ Tiny
IM393-S6E
Thermal Characteristics
4
Thermal Characteristics
Table 6
Value
Typ.
Parameter
Symbol
Conditions
Units
Min.
Max.
Low side W-phase
IGBT (See Figure 8 for
TC measurement point)
Single IGBT thermal resistance,
°C/W
RTH(J-C)
-
5.8
6.6
6.8
junction-case
Low side W-phase
diode (See Figure 8 for
TC measurement point)
Single diode thermal resistance,
°C/W
RTH(J-C)D
-
7.7
junction-case
9
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CIPOS™ Tiny
IM393-S6E
Recommended Operating Conditions
5
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. All voltages are absolute
referenced to COM. The VS offset is tested with all supplies biased at 15V differential.
Table 7
Value
Min. Typ. Max.
Parameter
Symbol
Conditions
Units
Positive DC bus input voltage
Low side control supply voltage
High side floating supply voltage
Input voltage
VDC
VDD
VBS
-
13.5
12.5
0
-
15
15
-
450
16.5
17.5
5
V
V
V
LIN, HIN, ITRIP, RFE
VIN
V
PWM carrier frequency
FPWM
VCOM
DT
PWIN(ON)
PWIN(OFF)
-
20
-
-
kHz
V
Voltage between COM and N (including surge)
-5
5
External dead time between HIN & LIN
Input pulse width
1
1
-
-
-
μs
μs
-
10
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CIPOS™ Tiny
IM393-S6E
Static Parameters
6
Static Parameters
6.1
Inverter
VBIAS(VDD, VBS(U,V,W))=15V, TJ=25°C unless otherwise specified
Table 8
Value
Parameter
Symbol
Conditions
Units
Min. Typ. Max.
-
-
-
1.5 1.95
V
V
IC = 3A
VCE(ON)
Collector-Emitter saturation voltage
1.7
10
-
IC = 3A, TJ = 150°C
VIN = 0V, VCE = 600V
80
μA
Collector-Emitter leakage current
ICES
VIN = 0V, VCE = 600V, TJ=150°C
-
80
-
μA
IC = 3A
-
-
1.5 1.95
1.4
V
V
Diode forward voltage drop
VF
IC = 3A, TJ = 150°C
-
6.2
Control
VBIAS(VDD, VBS(U,V,W))=15V, TJ=25ºC, unless otherwise specified. The VIN parameters are referenced to COM and are
applicable to all six channels
Table 9
Value
Min. Typ. Max.
Parameter
Symbol
Conditions
LIN, HIN, RFE
Units
V
V
Logic “1” input voltage
Logic “0” input voltage
VDD/VBS supply undervoltage,
positive going threshold
VDD/VBS supply undervoltage,
negative going threshold
VIN,TH+
VIN,TH-
VDD,UV+, VBS,UV+
2.5
-
-
-
LIN, HIN, RFE
-
0.8
9.6
8.6
10.4
9.4
11.2
10.2
V
V
VDD,UV-, VBS,UV-
VDD/VBS supply undervoltage
VDDUVH, VBSUVH
-
1
-
V
lock-out hysteresis
Quiescent VBS supply current
Quiescent VDD supply current
IQBS
IQDD
-
-
-
-
150
3.2
μA
mA
Offset supply leakage
ILK
VS = 600V
VIN = 3.3V
-
-
-
50
μA
μA
current
Input bias current for LIN,
HIN
IIN+
825
1110
Input bias current for RFE
Input bias current for ITRIP
ITRIP threshold voltage
IIN,RFE+
ITRIP+
VREF = 3.3V
VITRIP = 3.3V
-
-
0
4
1
μA
μA
V
16
VITRIP
0.44 0.49
0.54
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IM393-S6E
Static Parameters
Value
Parameter
Symbol
Conditions
Units
Min. Typ. Max.
ITRIP input hysteresis
Bootstrap resistance
RFE low on resistance
VITRIP,HYS
RBS
-
-
-
0.07
200
50
-
-
V
Ω
Ω
RRFE
100
12
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IM393-S6E
Dynamic Parameters
7
Dynamic Parameters
7.1
Inverter
VBIAS(VDD, VBS(U,V,W))=15V, TJ=25ºC, unless otherwise specified.
Table 10
Value
Min. Typ. Max.
Parameter
Symbol
Conditions
IC = 3A, VDC = 300V
Units
Input to output turn-on propagation
TON
-
-
-
-
-
-
-
-
1.15
1.15
1.35
1.5
μs
μs
μs
μs
delay
Input to output turn-off propagation
IC = 3A, VDC = 300V
VRFE = 5V to 0V
TOFF
TEN
delay
RFE low to six switch turn-off
propagation delay
ITRIP to six switch turn-off propagation
TITRIP
IC = 3A, VDC = 300V
delay
VDC = 300V, IC = 3A
TJ = 25°C
IGBT turn-on energy
IGBT turn-off energy
EON
-
-
90
130
-
-
μJ
μJ
150°C
VDC = 300V, IC = 3A
TJ = 25°C
EOFF
-
-
30
45
-
-
150°C
VDC = 300V, IC = 3A
TJ = 25°C
μJ
Diode reverse recovery energy
Reverse Bias Safe Operating Area
EREC
-
-
15
35
-
-
150°C
TJ = 150°C, IC = 12A, VP = 600V,
VDC = 450V, VDD = +15V to 0V
RBSOA
FULL SQUARE
7.2
Control
VBIAS(VDD, VBS(U,V,W))=15V, TJ=25ºC, unless otherwise specified.
Table 11
Value
Parameter
Symbol
Conditions
VIN = 0 or VIN = 5V
Units
Min. Typ. Max.
Input filter time (HIN, LIN, ITRIP)
Input filter time (RFE)
-
350
-
-
ns
ns
TFILIN
TFILRFE
TFLT
VRFE = 0 or VRFE = 5V
100 200
ITRIP to Fault propagation delay
Internal injected dead time
VIN = 0 or VIN = 5V, VITRIP = 5V
VIN = 0 or VIN = 5V
400 600 800
190 275 420
ns
ns
TDT
Matching propagation delay time
(On & Off) all channels
MT
External dead time > 420ns
-
-
50
ns
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IM393-S6E
Thermistor Characteristics
8
Thermistor Characteristics
Table 12
Value
Typ.
47
Parameter
Symbol
Conditions
Units
Min.
44.65
1.27
3989
-40
Max.
49.35
1.56
Resistance
T = 25°C, ±5% tolerance
R25
R125
B
kΩ
kΩ
K
Resistance
1.41
4050
-
T = 125°C
25-50°C, R2=R1e[B1/T2-1/T1)]
B-constant
4111
125
Temperature Range
°C
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
+5V
REXT
VTHERM
RTHERM
Max
Typ
Min
-40 -30 -20 -10
0
10
20
30
40
50
60
70
80
90
100 110 120 130
Thermistor Temperature [ C]
Figure 7
Thermistor readout vs. temperature (with 4.7kohm REXT pull-up resistor) and typical
thermistor resistance values vs. temperature table (For more details, please refer to the
application note ‘AN2018-13 CIPOS™ IM393-XX IPM technical description_1R0_final’)
14
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IM393-S6E
Mechanical Characteristics and Ratings
9
Mechanical Characteristics and Ratings
Table 13
Value
Typ.
Parameter
Symbol
Conditions
Units
Min.
Max.
Flat, greased surface. Heatsink
Thermal resistance, case-
RTH(C-S)
CTI
-
0.25
-
°C/W
compound thermal conductivity
heatsink
1W/mK
Comparative Tracking Index
600
0
-
-
V
Curvature of module backside BKC
-
150
0.8
-
µm
Nm
g
Mounting torque
Weight
T
W
M3 screw and washer
0.6
-
0.7
6.0
Figure 8
Backside curvature measurement position
15
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IM393-S6E
Qualification Information
10
Qualification Information
Table 14
UL Certified
File Number : E314539
Yes
RoHS Compliant
Human body model
Class 3A
Class C3
ESD
Charge discharge model
16
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IM393-S6E
Diagram & Tables
11
Diagram & Tables
11.1
Tc Measurement Point
Figure 9
TC measurement point
11.2
Input-Output Logic Table
P
Ho
Lo
HIN(U, V, W)
LIN(U, V, W)
U, V, W
Driver
IC
ITRIP
RFE
Figure 10
Table 15
Module block diagram
Input-output logic level table
RFE
ITRIP
HIN(U,V,W)
LIN(U,V,W)
U,V,W
1
1
0
0
0
0
1
X
1
0
0
1
X
X
0
1
0
1
X
X
VDC
0
Off*
Off*
Off*
Off*
1
1
1
0
* Voltage depends on direction of phase current
17
Final Datasheet
V2.0
2019-05-21
CIPOS™ Tiny
IM393-S6E
Diagrams & Tables
11.3
Switching Time Definitions
HIN(U, V, W)
LIN(U, V, W)
50%
50%
ITRIP
TFLT
50%
RFE
U, V, W
50%
50%
TITRIP
TFLT-CLR
Figure 11
ITRIP time waveform
50%
RFE
TEN
U, V, W
50%
Figure 12
Output disable timing diagram
HINx
2.1V
LINx
0.9V
trr
toff
ton
10%
10%
iCx
90%
90%
tf
tr
10%
10%
10%
vCEx
tc(on)
tc(off)
Figure 13
Switching times definition
18
Final Datasheet
V2.0
2019-05-21
CIPOS™ Tiny
IM393-S6E
Application Guide
12
Application Guide
12.1
Typical Application Schematic
#10
(1) P
P (35)
P (33)
(3) VS(W)
(4) VB(W)
VB3
VB2
HO3
VS3
(6) VS(V)
(7) VB(V)
W (32)
V (31)
#4
(9) VS(U)
HO2
VS2
#3
(10) VB(U)
VB1
3-ph AC
Motor
5 or 3.3V
15V
#8
#2
(12) VDD
(13) VTH
HO1
VS1
VDD
U (30)
-t°
#9
5 or 3.3V
(14) COM
COM
VSS
#5
(15) COM
(16) ITRIP
(17) RFE
LO3
LO2
LO1
ITRIP
RFE
N(W) (29)
N(V) (28)
N(U) (27)
Micro
Controller
(18) HIN(U)
HIN1
#7
#6
(19) HIN(V)
(20) HIN(W)
HIN2
HIN3
(21) LIN(U)
(22) LIN(V)
(23) LIN(W)
Power GND
LIN1
LIN2
LIN3
(24) N(W)
(25) N(V)
#1
(26) N(U)
Figure 14
Typical application connection
1. Input circuit
-RC filter can be used to reduce input signal noise (100Ω, 1nF)
-The capacitors should be located close to CIPOS™ Tiny (to COM terminal especially).
2. Itrip circuit
-To prevent a mis operation of protection function, RC filter is recommended
-The capacitor must be located close to Itrip and COM terminals.
3. VTH circuit
-This terminal should be pulled up to the bias voltage of 5V/3.3V through a proper resistor to define
suitable voltage for temperature monitoring.
-It is recommended that RC filter is placed close to the controller
4. VB-VS circuit
-Capacitors for high side floating supply voltage should be placed close to VB and VS terminals.
-Additional high frequency capacitors, typically 0.1µF, are strongly recommended.
5. Snubber capacitor
-The wiring among CIPOS™ Tiny, snubber capacitor and shunt resistors should be short as possible.
6. Shunt resistor
-SMD type shunt resistors are strongly recommended to minimize its internal stray inductance.
7. Ground pattern
-Pattern overlap of power ground and signal ground should be minimized. The patterns should be
connected at the common end of shunt resistors only for the same potential.
8. COM pattern
-Both of the COM terminals should be connected together.
9. RFE circuit
-To setup R and C parameter for fault clear time, please refer to Figure 5.
-This R is also mandatory for fault out reporting function because it is open drain structure.
10. P pattern
-Both of the P terminals should be connected together.
19
Final Datasheet
V2.0
2019-05-21
CIPOS™ Tiny
IM393-S6E
Application Guide
12.2
Performance Charts
8
7
6
5
4
3
2
1
0
FPWM=6kHz
FPWM=16kHz
V+ = 300V, VDD=VBS=15V,
TJ≤150ꢀC, TC≤125ꢀC, MI=0.8,
PF=0.8, Sinusoidal PWM
0
10
20
30
40
50
60
70
80
90 100 110 120 130 140 150
Case Temperature Tc [℃]
Figure 15
Maximum operating current SOA
1. This maximum operating current SOA is just one of example based on typical characteristics for this product.
It can be change by each user’s actual operating conditions.
12.3
Tj vs. Tth
160
150
140
130
120
110
100
TJ avg = 1.22 x TTherm + 10
116
90
70
75
80
85
90
95
100
105
110
115
120
Internal Thermistor Temperature Equivalent Read Out - °C
Figure 16
Typical Tj vs Tth correlation, sinusoidal modulation, VDC=300V, Iphase=5Arms, fsw=16kHz,
fmod=50Hz, MI=0.8, PF=0.6
20
Final Datasheet
V2.0
2019-05-21
CIPOS™ Tiny
IM393-S6E
Application Guide
12.4
–VS Immunity
Figure 17
Negative transient Vs SOA for integrated gate driver
21
Final Datasheet
V2.0
2019-05-21
CIPOS™ Tiny
IM393-S6E
Package Information
13
Package Outline
MISSING PIN : 2, 5, 8, 11, 34
±0.30
32.00
±0.15
5.55
7.62
4X3.81
2X2.54
8X0.70
8X0.60
1.90
33
32
31
30
29
28
27
35
16.00
±0.20
1.70
0°~4°
3
4
9
10
1
15
17
19
21
23
26
7
13
25X1.27
8.30
15.875
31.75
Default tolerance : ± 0.5mm
34.00
Figure 18
IM393-S6E
22
Final Datasheet
V2.0
2019-05-21
CIPOS™ Tiny
IM393-S6E
Package Information
MISSING PIN : 2, 5, 8, 11, 34
±0.30
32.00
±0.15
2.90
7.62
4X3.81
2X2.54
8X0.70
8X0.60
1.90
33
32
31
30
29
28
27
35
16.00
±0.20
1.70
0°~4°
3
1
4
9
10
15
17
19
21
23
26
7
13
25X1.27
5.65
15.875
31.75
Default tolerance : ± 0.5mm
34.00
Figure 19
IM393-S6E2
23
Final Datasheet
V2.0
2019-05-21
CIPOS™ Tiny
IM393-S6E
Package Information
MISSING PIN : 2, 5, 8, 11, 34
±0.30
32.00
±0.15
3.60
7.62
4X3.81
2X2.54
8X0.70
8X0.60
1.90
33
32
31
30
29
28
27
35
16.00
±0.20
1.70
0°~4°
3
1
4
9
10
15
17
19
21
23
26
7
13
25X1.27
6.35
15.875
31.75
Default tolerance : ± 0.5mm
34.00
Figure 20
IM393-S6E3
24
Final Datasheet
V2.0
2019-05-21
CIPOS™ Tiny
IM393-S6E
Revision History
Revision History
Major changes since the last revision
Page or Reference
Revision
Date
Description of changes
25
Final Datasheet
V2.0
2019-05-21
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
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(www.infineon.com).
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event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
Edition 2017-09-26
Published by
Infineon Technologies AG
81726 Munich, Germany
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values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
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