IM523-S6A [INFINEON]
CIPOS™ Mini 600 V, 6 A三相智能功率模块;
| 型号： | IM523-S6A |
| 厂家： | 
Infineon |
| 描述： | CIPOS™ Mini 600 V, 6 A三相智能功率模块 |
| 文件： | 总22页 (文件大小：1089K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IM523-S6A Datasheet
CIPOS™ Mini IM523
IM523-S6A
Description
The CIPOS™ IM523 product family offers the chance for integrating various power and control components to
increase reliability and optimize PCB size and system cost. It is designed to control three-phase motors in
variable speed drives. The package concept is specially adapted to power applications, which need good
thermal conduction and electrical isolation, but also less EMI and overload protection. To deliver excellent
electrical performance, Infineon’s leading-edge RC-Drives IGBTs are combined with an optimized SOI gate
driver.
Features
Package
Fully isolated dual in-line molded module
Lead-free terminal plating; RoHS compliant
Inverter
Reverse Conducting Drives IGBTs
Rugged SOI gate driver technology with stability
against transient and negative voltage
Allowable negative VS potential up to -11 V
for signal transmission at VBS = 15 V
Integrated bootstrap functionality
Overcurrent shutdown
Built-in NTC thermistor for temperature monitor
Undervoltage lockout at all channels
Low-side emitter pins accessible for phase current
monitoring (open emitter)
Sleep function
Cross-conduction prevention
All of 6 switches turn off during protection
Potential applications
Home appliances, low power motor drives
Datasheet
Please read the Important Notice and Warnings at the end of this document
page 1 of 22
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2022-05-03
CIPOS™ Mini IM523
IM523-S6A
Product validation
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Table 1
Base Part Number
IM523-S6A
Product Information
Standard Pack
Package Type
Remarks
Form
MOQ
DIP 36x21
14 pcs / Tube
280 pcs
Datasheet
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CIPOS™ Mini IM523
IM523-S6A
Table of contents
Table of contents
Description .................................................................................................................................... 1
Features ........................................................................................................................................ 1
Potential applications..................................................................................................................... 1
Product validation.......................................................................................................................... 2
Table of contents............................................................................................................................ 3
1
Internal Electrical Schematic................................................................................................... 4
2
2.1
2.2
Pin Description ...................................................................................................................... 5
Pin Assignment........................................................................................................................................5
Pin Description ........................................................................................................................................6
3
Absolute Maximum Ratings ..................................................................................................... 8
Module Section........................................................................................................................................8
Inverter Section .......................................................................................................................................8
Control Section........................................................................................................................................8
3.1
3.2
3.3
4
5
Thermal Characteristics.......................................................................................................... 9
Recommended Operation Conditions ......................................................................................10
6
6.1
6.2
Static Parameters .................................................................................................................11
Inverter Section.....................................................................................................................................11
Control Section......................................................................................................................................11
7
7.1
7.2
Dynamic Parameters .............................................................................................................12
Inverter Section.....................................................................................................................................12
Control Section......................................................................................................................................12
8
Thermistor ...........................................................................................................................13
Mechanical Characteristics and Ratings ...................................................................................14
Qualification Information.......................................................................................................15
9
10
11
Diagrams and Tables .............................................................................................................16
TC Measurement Point...........................................................................................................................16
Backside Curvature Measurment Point................................................................................................16
Switching Time Definition.....................................................................................................................17
Sleep function timing diagram .............................................................................................................17
11.1
11.2
11.3
11.4
12
12.1
12.2
Application Guide..................................................................................................................18
Typical Application Schematic .............................................................................................................18
Performance Chart................................................................................................................................18
13
Package Outline....................................................................................................................20
Revision history.............................................................................................................................21
Datasheet
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CIPOS™ Mini IM523
IM523-S6A
Internal Electrical Schematic
1
Internal Electrical Schematic
NC (24)
P (23)
U (22)
(1) VS(U)
(2) VB(U)
VB1
VB2
HO1
VS1
RBS1
(3) VS(V)
(4) VB(V)
HO2
VS2
RBS2
V (21)
(5) VS(W)
(6) VB(W)
HO3
VS3
VB3
W (20)
RBS3
LO1
LO2
LO3
(7) HIN(U)
(8) HIN(V)
HIN1
HIN2
NU (19)
NV (18)
NW (17)
(9) HIN(W)
(10) LIN(U)
HIN3
LIN1
(11) LIN(V)
(12) LIN(W)
(13) VDD
LIN2
LIN3
VDD
VFO
(14) VFO
(15) ITRIP
ITRIP
VSS
(16) VSS
Thermistor
Figure 1
Internal electrical schematic
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IM523-S6A
Pin Description
2
Pin Description
2.1
Pin Assignment
Bottom view
(24) NC
(1) VS(U)
(2) VB(U)
(23) P
(22) U
(21) V
(20) W
(19) NU
(3) VS(V)
(4) VB(V)
(5) VS(W)
(6) VB(W)
(7) HIN(U)
(8) HIN(V)
(9) HIN(W)
(10) LIN(U)
(11) LIN(V)
(12) LIN(W)
(13) VDD
(14) VFO
(18) NV
(17) NW
(15) ITRIP
(16) VSS
Figure 2
Pin configuration
Table 2
Pin assignment
Pin name
VS(U)
Pin number
Pin description
1
2
U-phase high-side floating IC supply offset voltage
U-phase high-side floating IC supply voltage
V-phase high-side floating IC supply offset voltage
V-phase high-side floating IC supply voltage
W-phase high-side floating IC supply offset voltage
W-phase high-side floating IC supply voltage
U-phase high-side gate driver input
V-phase high-side gate driver input
W-phase high-side gate driver input
U-phase low-side gate driver input
V-phase low-side gate driver input
W-phase low-side gate driver input
Low-side control supply
VB(U)
3
VS(V)
4
VB(V)
5
VS(W)
VB(W)
HIN(U)
HIN(V)
HIN(W)
LIN(U)
LIN(V)
LIN(W)
VDD
6
7
8
9
10
11
12
13
14
15
16
17
18
VFO
Fault output / temperature monitor
Overcurrent shutdown input
ITRIP
VSS
Low-side control negative supply
NW
W-phase low-side emitter
NV
V-phase low-side emitter
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CIPOS™ Mini IM523
IM523-S6A
Pin Description
19
20
21
22
23
24
NU
W
V
U-phase low-side emitter
Motor W-phase output
Motor V-phase output
Motor U-phase output
Positive bus input voltage
No connection
U
P
NC
2.2
Pin Description
HIN(U, V, W) and LIN(U, V, W) (Low-side and high-
side control pins, Pin 7 - 12)
formerly activated one is remained activated so
that the leg is kept steadily in a safe state.
A minimum deadtime insertion of typically 360 ns is
also provided by driver, in order to reduce cross-
conduction of the IGBTs.
These pins are positive logic and they are
responsible for the control of the integrated IGBTs.
The Schmitt-trigger input thresholds of them are
such to guarantee LSTTL and CMOS compatibility
down to 3.3 V controller outputs. A pull-down
VFO (Fault-output and NTC, Pin 14)
The VFO pin indicates a module failure in case of
under voltage at pin VDD or in case of triggered
overcurrent detection at ITRIP. An external pull-up
resistor is required.
resistor of about 5 kΩ is internally provided to pre-
bias input during supply start-up, and a zener
clamp is provided to protect the pin. Negative
pulses down to an absolute minimum of -5.5 V are
allowed that offers an outstanding robustness.
Input Schmitt-trigger and noise filter provide noise
rejection to short input pulses.
IM523
VDD
RON,FLT
From ITRIP - Latch
VFO
VSS
The noise filter suppresses control pulses shoter
than the filter time tFIL,IN. The Figure 4 describes how
the filter works. An input pulse-width shorter than 1
µs is not recommended.
1
From UV detection
Thermistor
Figure 5
Internal circuit at pin VFO
The sleep function is activated after each trigger of
ITRIP or undervoltage lockout. A new edge input
signal is mandatory to activate gate drives after
fault-clear time as shown in Figure 10.
IM523
VDD
Schmitt-Trigger
HINx
LINx
INPUT NOISE
FILTER
5k
SWITCH LEVEL
VIH; VIL
VSS
ITRIP (Overcurrent detection function, Pin 15)
Figure 3
Input pin structure
The IM523 product family provides an overcurrent
detection function by connecting the ITRIP input
with the IGBT current feedback. The ITRIP
comparator threshold (typ. 0.525 V) is referenced to
VSS. An input noise filter (tITRIP = typ. 530 ns) prevents
the driver to detect false overcurrent events.
Overcurrent detection generates a shutdown of
outputs of the gate driver. Fast track shutdown
function allows low-side outputs to be turned off
faster than high side outputs about 200 ns.
a)
b)
HIN
tFIL,IN
tFIL,IN
HIN
LIN
LIN
high
HO
LO
HO
LO
low
Figure 4
Input filter timing diagram
The integrated gate driver additionally provides a
shoot-through prevention capability that avoids
the simultaneous on-states of the same leg. When
both inputs of the same leg are activated, only
The fault-clear time is set to minimum 100 µs.
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CIPOS™ Mini IM523
IM523-S6A
Pin Description
VDD, VSS (Low-side control supply and reference,
Pin 13, 16)
VS(U, V, W) provide a high robustness against
negative voltage in respect of VSS of -50 V transiently.
This ensures very stable designs even under harsh
conditions.
VDD is the control supply and it provides power both
to input logic and to output stage. Input logic is
referenced to VSS ground.
NW, NV, NU (Low-side emitter, Pin 17 - 19)
The undervoltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.4 V is present.
The gate driver shuts down all the outputs, when
the VDD supply voltage is below VDDUV- = 11.5 V. This
prevents the IGBTs from critically low gate voltage
levels during on-state and therefore from excessive
power dissipation.
The low-side emitters are available for current
measurement of each phase leg. It is recommended
to keep the connection to pin VSS as short as
possible to avoid unnecessary inductive voltage
drops.
W, V, U (High-side emitter and low-side collector,
Pin 20 - 22)
VB(U, V, W) and VS(U, V, W) (High-side supplies,
Pin 1 - 6)
These pins are connected to motor U, V, W input
pins
VB to VS is the high-side supply voltage. The high-
side circuit can float with respect to VSS following
the high-side IGBT emitter voltage.
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
P (Positive bus input voltage, Pin 23)
The high-side IGBTs are connected to the bus
voltage. It is noted that the bus voltage does not
exceed 450 V.
The undervoltage detection operates with a rising
supply threshold of typical VBSUV+ = 11.5 V and a
falling threshold of VBSUV- = 10.7 V.
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CIPOS™ Mini IM523
IM523-S6A
Absolute Maximum Ratings
3
Absolute Maximum Ratings
(VDD = 15 V and TJ = 25°C, if not stated otherwise)
3.1
Module Section
Description
Symbol
TSTG
TC
Condition
Refer to Figure 7
Value
-40 ~ 125
-40 ~ 125
-40 ~ 150
2000
Unit
°C
Storage temperature range
Operating case temperature
Operating junction temperature
Isolation test voltage
°C
TJ
°C
VISO
1 min, RMS, f = 60 Hz
V
3.2
Inverter Section
Description
Symbol
VCES
Condition
Value
600
Unit
Max. blocking voltage
V
V
V
DC link supply voltage of P-N
DC link supply voltage (surge) of P-N
VPN
Applied between P-N
Applied between P-N
450
VPN(surge)
500
TC = 25°C, TJ < 150°C
TC = 80°C, TJ < 150°C
±6
±4
Continuous collector current1
IC
A
TC = 25°C, TJ < 150°C
less than 1 ms
Maximum peak collector current
IC(peak)
A
±12
Power dissipation per IGBT
Short circuit withstand time2
Ptot
tSC
18.5
3
W
VDC ≤ 360V, TJ = 150°C
µs
3.3
Control Section
Description
Symbol
Condition
Value
Unit
High-side offset voltage
VS
600
V
Repetitive peak reverse voltage of
bootstrap diode
VRRM
VDD
VBS
VIN
600
-1 ~ 20
V
V
V
V
Module supply voltage
High-side floating supply voltage
(VB reference to VS)
-1 ~ 20
Input voltage(LIN, HIN, ITRIP)
-1 ~ VDD+0.3
1 Pulse width and period are limited by junction temperature
2 Allowed number of short circuits: < 1000; time between short circuits: > 1 s.
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CIPOS™ Mini IM523
IM523-S6A
Thermal Characteristics
4
Thermal Characteristics
Value
Typ.
Description
Symbol
Condition
Unit
Min.
Max.
Single IGBT thermal resistance,
junction to case
RthJC
-
-
-
6.74
K/W
K/W
See Figure 7 for TC
measurement point
Single diode thermal resistance,
junction-case
RthJC, D
-
12.0
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CIPOS™ Mini IM523
IM523-S6A
Recommended Operation Conditions
5
Recommended Operation Conditions
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.
Value
Description
Symbol
Unit
Min.
0
Typ.
300
15
Max.
450
DC link supply voltage of P-N
VPN
VDD
V
V
V
Low-side supply voltage
13
17.5
17.5
High-side floating supply voltage (VB vs. VS)
VBS
13
-
VIN
VITRIP
fPWM
Logic input voltages LIN, HIN, ITRIP
0
-
5
V
Inverter PWM carrier frequency
-
-
-
-
20
-
kHz
µs
V
External deadtime between HIN and LIN
Voltage between VSS – N (including surge)
DT
0.5
-5
VCOMP
PWIN(ON)
PWIN(OFF)
5
Minimum input pulse width
Control supply variation
1
-
-
µs
ΔVBS
ΔVDD
-1
-1
-
-
1
1
V/µs
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IM523-S6A
Static Parameters
6
Static Parameters
(VDD = VBS = 15 V and TJ = 25°C, if not stated otherwise)
6.1
Inverter Section
Value
Typ.
Description
Symbol
Condition
IC = 6 A, TJ = 25°C
Unit
Min.
Max.
-
-
2.55
3.0
3.05
-
Collector-emitter voltage
Collector-emitter leakage current
Diode forward voltage
VCE(Sat)
ICES
V
mA
V
IC = 6 A, TJ = 150°C
VCE = 600 V
-
-
-
-
1
2.85
-
IF = 6 A, TJ = 25°C
IF = 6 A, TJ = 150°C
2.15
2.25
VF
6.2
Control Section
Value
Typ.
2.0
Description
Symbol
Condition
Unit
Min.
1.7
Max.
2.3
Logic "1" input voltage (LIN, HIN)
Logic "0" input voltage (LIN, HIN)
ITRIP positive going threshold
ITRIP input hysteresis
VIH
V
VIL
0.7
0.9
1.1
V
VIT,TH+
VIT,HYS
VDDUV+
VBSUV+
VDDUV-
VBSUV-
475
45
525
70
570
-
mV
mV
11.5
10.6
10.6
9.7
12.4
11.5
11.5
10.7
13.1
12.2
12.3
11.7
VDD and VBS supply undervoltage
positive going threshold
V
V
VDD and VBS supply undervoltage
negative going threshold
VDD and VBS supply undervoltage
lockout hysteresis
VDDUVH
VBSUVH
0.5
0.9
-
V
Quiescent VBx supply current
(VBx only)
IQBS
IQDD
HIN = 0 V
-
-
-
-
300
1.1
µA
mA
Quiescent VDD supply current
(VDD only)
LIN = 0 V, HINX = 5 V
Input bias current for LIN, HIN
Input bias current for ITRIP
Input bias current for VFO
VFO output voltage
IIN+
IITRIP+
IFO
VIN = 5 V
-
-
-
-
-
1.1
68
1.7
mA
µA
µA
V
VITRIP = 5 V
185
VFO = 5 V, VITRIP = 0 V
IFO = 10 mA, VITRIP = 1 V
IF = 0.3 mA
60
-
-
-
VFO
0.35
1.0
Bootstrap diode forward voltage
VF_BSD
V
Between VF1 = 4 V and VF2 = 5
V
37
Bootstrap diode resistance
RBSD
-
-
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IM523-S6A
Dynamic Parameters
7
Dynamic Parameters
(VDD = 15 V and TJ = 25°C, if not stated otherwise)
7.1
Inverter Section
Value
Typ.
765
20
Description
Symbol
Condition
Unit
Min.
Max.
Turn-on propagation delay time
Turn-on rise time
ton
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
VLIN, HIN = 5 V,
IC = 6 A,
Turn-on switching time
Reverse recovery time
tc(on)
trr
75
VDC = 300 V
100
840
40
Turn-off propagation delay time
Turn-off fall time
toff
tf
VLIN, HIN = 0 V,
IC = 6 A,
VDC = 300 V
Turn-off switching time
Short circuit propagation delay time
tc(off)
tSCP
40
From VIT,TH+ to 10% ISC
1150
VDC = 300 V, IC = 6 A
TJ = 25°C
TJ = 150°C
IGBT turn-on energy (includes
reverse recovery of diode)
Eon
Eoff
Erec
-
-
95
140
-
-
µJ
µJ
µJ
VDC = 300 V, IC = 6 A
TJ = 25°C
TJ = 150°C
IGBT turn-off energy
-
-
30
55
-
-
VDC = 300 V, IC = 6 A
TJ = 25°C
TJ = 150°C
Diode recovery energy
-
-
25
45
-
-
7.2
Control Section
Value
Typ.
530
Description
Symbol
Condition
Unit
Min.
Max.
Input filter time ITRIP
tITRIP
tFIL,IN
tFLTCLR
tFLT
VITRIP = 1 V
-
-
ns
ns
µs
ns
ns
ns
Input filter time at LIN, HIN for turn
on and off
VLIN, HIN = 0 V or 5 V
-
290
280
680
360
20
-
Fault clear time after ITRIP-fault
ITRIP to fault propagation delay
Internal deadtime
100
-
V
V
LIN, HIN = 0 or VLIN, HIN = 5 V,
ITRIP = 1 V
-
-
-
1000
DTIC
MT
-
-
External dead time > 500
ns
Matching propagation delay time (on
and off) all channels
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IM523-S6A
Thermistor
8
Thermistor
Value
Typ.
85
Description
Symbol
Condition
Unit
Min.
Max.
Resistance
RNTC
TNTC = 25°C
-
-
k
B-constant of NTC
(negative temperature coefficient)
thermistor
B(25/100)
-
4092
-
K
3500
35
Min.
Typ.
3000
30
Max.
25
2500
20
15
2000
10
1500
5
0
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
1000
500
0
Thermistor temperature [℃]
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor temperature [℃]
Figure 6
Thermistor resistance – temperature curve and table
(For more information, please refer to the application note)
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IM523-S6A
Mechanical Characteristics and Ratings
9
Mechanical Characteristics and Ratings
Value
Typ.
-
Description
Condition
Unit
Min.
550
0.59
-50
-
Max.
-
Comparative tracking index (CTI)
Mounting torque
V
M3 screw and washer
Refer to Figure 8
0.78
100
-
Nm
µm
g
Backside curvature
Weight
-
6.15
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IM523-S6A
Qualification Information
10
Qualification Information
UL certification
File number: E314539
Moisture sensitivity level
(SOP23 only)
-
RoHS compliant
Yes (Lead-free terminal plating)
HBM(human body model)
2000 V
C3
ESD
CDM(charged device model)
class
Datasheet
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IM523-S6A
Diagrams and Tables
11
Diagrams and Tables
11.1
TC Measurement Point
Figure 7
TC measurement point1
11.2
Backside Curvature Measurment Point
+
-
- +
Figure 8
Backside curvature measurement position
1Any measurement except for the specified point in Figure 7 is not relevant for the temperature verification and
brings wrong or different information.
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IM523-S6A
Diagrams and Tables
11.3
Switching Time Definition
HINx
LINx
2.0V
0.9V
trr
irm
toff
ton
10% irm
iCx
90%
90%
tf
tr
10%
10%
10%
10%
vCEx
tc(on)
tc(off)
Figure 9
Switching time definition
11.4
Sleep function timing diagram
HINx
LINx
HOx
LOx
ITRIP
VDD
VFO
VBS
Figure 10 Sleep function timing diagram
Datasheet
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CIPOS™ Mini IM523
IM523-S6A
Application Guide
12
Application Guide
12.1
Typical Application Schematic
NC (24)
P (23)
(1) VS(U)
(2) VB(U)
VB1
HO1
VS1
RBS1
U (22)
(3) VS(V)
#4
(4) VB(V)
VB2
HO2
VS2
V (21)
RBS2
3-ph AC
Motor
(5) VS(W)
(6) VB(W)
VB3
HO3
VS3
W (20)
RBS3
#5
#1
(7) HIN(U)
HIN1
LO1
LO2
LO3
(8) HIN(V)
HIN2
NU (19)
(9) HIN(W)
HIN3
(10) LIN(U)
LIN1
(11) LIN(V)
LIN2
Micro
Controller
#7
#6
(12) LIN(W)
LIN3
NV (18)
(13) VDD
Power
GND line
VDD
VDD line
(14) VFO
VFO
(15) ITRIP
ITRIP
5 or 3.3V line
(16) VSS
NW (17)
VSS
Thermistor
#3
U-phase current sensing
V-phase current sensing
W-phase current sensing
Temperature monitor
#2
<Signal for protection>
<Signal for protection>
Figure 11 Typical application circuit
#1 Input circuit
−
RC filter circuit can be used to reduce input signal noise (e.g. 100 , 1 nF).
−
The filter capacitors should be placed close to the IPM (to VSS pin especially).
#2 ITRIP circuit
−
To prevent protection function errors, RC filter circuit is recommended.
The filter capacitor should be placed close to ITRIP and VSS pins.
−
#3 VFO circuit
−
VFO pin is an open-drain output. This signal line should be pulled up to the bias voltage of the 5 V/3.3 V with
a proper resistor.
−
It is recommended that RC filter circuit is placed close to the controller.
#4 VB-VS circuit
Capacitors for high-side floating supply voltage should be placed close to VB and VS pins.
#5 Snubber capacitor
The wiring among the IPM, snubber capacitor and shunt resistors should be short as possible.
#6 Shunt resistor
SMD-type resistors are strongly recommended to minimize stray inductance.
#7 Ground pattern
−
−
−
−
Power ground and signal ground should be connected at a single point. It is recommended to connect
them at the end of shunt resistor.
Datasheet
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CIPOS™ Mini IM523
IM523-S6A
Application Guide
12.2
Performance Chart
6
5
4
3
2
1
0
VDC = 300 V, VDD = VBS = 15 V, SVPWM
TJ 150oC, TC 125oC, M.I. = 0.8, P.F. = 0.8
fSW = 5 kHz
f
SW = 15 kHz
0
25
50
75
100
125
150
Case temperature, TC [oC]
Figure 12 Maximum operating current SOA1
1This maximum operating current SOA is just one of example based on typical characteristics for this product. It
can be changed by each user’s actual operating conditions.
Datasheet
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CIPOS™ Mini IM523
IM523-S6A
Package Outline
13
Package Outline
Figure 13 IM523-S6A
Datasheet
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CIPOS™ Mini IM523
IM523-S6A
Revision history
Revision history
Document
version
Date of release
2022-05-03
Description of changes
2.0
Initial release
Datasheet
21 of 22
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2022-05-03
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