IM69D128S [INFINEON]
Discover the IM69D128S – an ultra-low power digital XENSIVTM MEMS microphone, designed for applications which require high SNR (low self-noise), long battery life, and high reliability. ;
| 型号： | IM69D128S |
| 厂家： | 
Infineon |
| 描述： | Discover the IM69D128S – an ultra-low power digital XENSIVTM MEMS microphone, designed for applications which require high SNR (low self-noise), long battery life, and high reliability. |
| 文件： | 总19页 (文件大小：1345K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IM69D128SV01
Datasheet
h
h
i
6
Ultra-low power digital PDM XENSIV™ MEMS microphone
Features
• Ultra-low current consumption in high performance mode (520µA)
• Low current consumption in low power mode (180µA)
• Signal to noise ratio (SNR) of 69dB(A)
• Acoustic overload point at 128dBSPL
• Flat frequency response with a low frequency roll-off at 30Hz
• Component level IP57 water and dust resistant
• Package dimensions: 3.5mm x 2.65mm x 0.98mm
• Enhanced RF shielding
• Digital PDM output
• Bottom port
Potential applications
• Active Noise Cancellation (ANC) headphones and earphones
• Smartphones and mobile devices
• High quality audio capturing
- Laptops and tablets
- Conference systems
- Cameras and camcorders
• Devices with Voice User Interface (VUI)
- Smart speakers
- Home automation
- IOT devices
• Industrial or home monitoring with audio pattern detection
Product validation
Technology qualified for industrial applications.
Ready for validation in industrial applications according to the relevant tests of IEC 60747 and
60749 or alternatively JEDEC47/20/22.
Description
Discover the IM69D128S – an ultra-low power digital XENSIV™ MEMS microphone, designed for applications which require high
SNR (low self-noise), long battery life, and environmental robustness in a small package.
Great signal-to-noise ratio (SNR) of 69dB(A) enables crystal clear audio experience without compromising on battery life.
Enabled by a revolutionary digital microphone ASIC, the IM69D128S sets a new benchmark by cutting current consumption to
520µA – almost the half of what models with similar performance on the market can offer.
Additionally, IM69D128S masters the art of switching between different power & performance profiles without any audible
artifacts.
IM69D128S is based on Infineon’s Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a
microphone level.
Type
Package
Marking
IM69D128SV01
PG-TLGA-5-2
I69D18
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
1.01
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IM69D128SV01
Datasheet
Table of contents
Table of contents
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Typical performance characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Acoustic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
2
3
4
Electrical characteristics and parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Audio DC offset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Stereo PDM configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1
4.2
4.3
4.4
4.5
5
6
7
8
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Footprint and stencil recommendation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Reflow soldering and board assembly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
9
Reliability specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
9.1
Environmental robustness . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
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1 Block diagram
1
Block diagram
Figure 1
Block diagram
Datasheet
3
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2 Typical performance characteristics
2
Typical performance characteristics
Test conditions: VDD = 1.8V, fCLK = 3.072MHz, TA = 25°C, unless otherwise specified.
12
9
30
25
20
15
10
5
6
3
0
-3
-6
-9
-12
0
-5
-10
10
100
1000
10000
0
20
40
60
80
Frequency [Hz]
Frequency [kHz]
Figure 2
Typical amplitude response
Figure 3
Typical ultrasonic response
90
75
60
45
30
15
0
10000
1000
100
10
-15
-30
10
1
100
1000
10000
10
100
1000
10000
Frequency [Hz]
Frequency [Hz]
Figure 4
Typical phase response
Figure 5
Typical group delay
10
1
10
1
128dB SPL
125dB SPL
110dB SPL
0.1
90
0.1
95
100
105
110
115
120
125
130
135
100
1000
10000
Input Sound Pressure Level [dB]
Frequency [Hz]
Figure 6
Typical THD vs SPL
Figure 7
Typical THD vs frequency
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2 Typical performance characteristics
-80
-90
700
600
500
400
300
200
100
0
fclock = 3.072MHz
-100
-110
-120
-130
-140
-150
-160
fclock = 2.400MHz
fclock = 1.536MHz
fclock = 768kHz
1.60
2.10
2.60
3.10
3.60
10
100
1000
10000
V
DD [V]
Frequency [Hz]
Figure 8
Typical noise floor (unweighted)
Figure 9
Typical IDD vs VDD
Datasheet
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3 Acoustic characteristics
3
Acoustic characteristics
Test conditions (unless otherwise specified in the table): VDD = 1.8V, fCLK = 3.072MHz, OSR=64, TA = 25°C, 55% R.H.,
audio bandwidth 20Hz to 20kHz, select pin grounded, no load on DATA, Tedge = 9ns
Table 1
Acoustic specifications
Symbol
Parameter
Values
Typ.
-37
Unit Note or Test Condition
Min.
Max.
Sensitivity
S
-38
-36
1kHz, 94 dBSPL, all
dBFS
operating modes
Low Frequency Roll-off
LFRO
30
30
66
Hz
-3dB relative to 1kHz
Resonant Frequency Peak
kHz
Signal to Noise Fclock = 768kHz
Ratio
SNR
20Hz to 8kHz bandwidth,
OSR: 48, A-Weighted
Fclock = 1.536MHz
67.5
20Hz to 12kHz bandwidth, A-
Weighted
dB(A)
%
Fclock = 2.4MHz
Fclock = 3.072MHz
68
69
20Hz to 20kHz bandwidth, A-
Weighted
Total Harmonic 94dBSPL
THD
AOP
0.3
Measuring 2nd to 5th
harmonics; 1kHz. S=typ, all
operating modes
Distortion
125dBSPL
1.0
Acoustic
Overload Point
10% THD
128
Measuring 2nd to 5th
dBSPL harmonics; 1kHz. S=typ, all
operating modes
Group Delay
250Hz
600Hz
1kHz
4kHz
75Hz
1kHz
4kHz
120
20
10
3.5
25
1
µs
°
Phase
Response
-4
Directivity
Polarity
Omnidirectional
Positive pressure increases density of 1's,
negative pressure decreases density of 1's in
data output
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4 Electrical characteristics and parameters
4
Electrical characteristics and parameters
Absolute maximum ratings
4.1
Stresses exceeding the listed maximum ratings may affect device reliability or cause permanent device damage.
Functional device operation at these conditions is not guaranteed.
Table 2
Absolute maximum ratings
Symbol
Parameter
Values
Unit
Note / Test Condition
Min.
Max.
3.6
Voltage on any Pin
Vmax
TS
V
Storage Temperature
Ambient Temperature
-40
-40
125
85
°C
°C
TA
4.2
Electrical parameters
Table 3
Electrical parameters and digital interface input
Parameter
Symbol
Values
Typ.
1.8
Unit
Note / Test Condition
Min.
Max.
1)
2)
Supply Voltage
VDD
1.62
3.6
350
V
kHz
kHz
MHz
ms
V
Clock
Frequency
Range
Standby Mode
Low Power Mode
Normal Mode
fclock
380
1.2
768
1020
3.3
3.072
VDD Ramp-up Time
Input Logic Low Level
Input Logic High Level
Clock Rise/Fall Time
Clock Duty Cycle
50
Time until VDD ≥ VDD_min
10% to 90%
VIL
0.3xVDD
VIH
0.7xVDD
45
V
13
55
ns
%
Output Load Capacitance on
DATA
Cload
100
pF
1
A 1μF bypass capacitor shall be placed close to the microphone VDD pad to ensure best SNR performance.
2
Data pad is high impedance in standby mode.
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4 Electrical characteristics and parameters
4.3
Electrical characteristics
Test conditions (unless otherwise specified in the table): VDD = 1.8V, TA = 25°C, 55% R.H.
Table 4
General electrical characteristics
Symbol
Parameter
Values
Typ.
Unit Note / Test Condition
Min.
Max.
1
Current
Consumption
Clock Off Mode
Standby Mode
Fclock = 768kHz
Fclock = 1.536MHz
Fclock = 2.4MHz
Fclock = 3.072MHz
Iclock_off
Istandby
IDD
μA
CLOCK pulled low
No load on DATA
<5pF load on DATA
25
50
180
420
480
520
250
650
20
Short Circuit Current
1
mA
Grounded DATA pin
Power Supply Rejection
PSR1k_NM
PSR217_NM
-80
-86
dBFS 100mVpp sine wave on
VDD swept from 200Hz to
20kHz.
dBFS(A) 100mVrms, 217Hz square
wave on VDD. A-weighted.
Startup Time
0.5dB sensitivity
20
50
ms
Time to start up in any
operating modes afer
VDD_min and CLOCK have
been applied.3)
accuracy
0.2dB sensitivity
accuracy
Mode Switch
Time
0.5dB sensitivity
accuracy
20
ms
Time to switch between
operating modes. VDD
remains on during the
mode switch.3)
0.2dB sensitivity
accuracy
50
Output Logic Low Level
Output Logic High Level
Delay Time for DATA Driven
VOL
VOH
tDD
0.2xVDD
V
0.8xVDD
40
80
30
ns
Delay time from CLOCK
edge (0.5xVDD) to DATA
driven.
Delay Time for DATA High-Z4)
Delay Time for DATA Valid5)
tHZ
5
ns
ns
Delay time from CLOCK
edge (0.5xVDD) to DATA
high impedance state
tDV
100
Delay time from CLOCK
edge (0.5xVDD) to DATA
valid (<0.3xVDD or
>0.7xVDD
)
Power-on behaviour
Idle tone is output over PDM within 3ms of applying VDD and fclock, remains until
a valid microphone signal is available. Idle tone consists of alternating 1s and 0s,
representing a zero input signal.
3
Verified at typical PDM clock frequencies for each power mode.
thold is dependent on Cload
Load on data: Cload=100pF, Rload=100kΩ
4
5
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4 Electrical characteristics and parameters
Figure 10
Timing diagram
4.4
Audio DC offset
The DC output level encoded in the DC bit stream is determined by the L/R state on startup. In each case the DC
output level is stable over time and does not vary with input signal level.
Table 5
DC output level using L/R pin
LR state
DC output level (typical)
Unit
dBFS
dBFS
LR = GND
LR = VDD
-80
-40
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4 Electrical characteristics and parameters
4.5
Stereo PDM configuration
The IM69D128S is designed to function in circuits with one or two microphones on the PDM bus. When two
microphones are connected, data is transmitted alternately according to the L/R pin status of each microphone.
When two microphones are connected to a shared PDM bus, the power modes of both microphones will be the same
as both are controlled by the same PDM clock. The performance is unchanged relative to a single microphone per bus
configuration.
Table 6
PDM channel configuration using L/R pin.
Channel
DATA1
Data driven
Data high-Z
L/R connection
Falling clock edge
Rising clock edge
Rising clock edge
Falling clock edge
GND
VDD
DATA2
VDD
MIC 2
MIC 1
CVDD
CVDD
VDD
LR
VDD
LR
GND
GND
DATA
DATA
CLK
CLK
DATA
CLK
CODEC
Figure 11
Typical stereo mode configuration
Note:
For best performance it is strongly recommended to place a 100nF (CVDD_typical) capacitor between VDD and
ground. The capacitor should be placed as close to VDD as possible. A termination resistor (RTERM) of about
100Ω may be added to reduce the ringing and overshoot on the output signal.
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5 Package information
5
Package information
Figure 12
Table 7
IM69D128SV01 package drawing
IM69D128SV01 pin configuration
Pin Number
Name
VDD
Description
1
2
3
4
5
Power supply
CLOCK
DATA
PDM clock input
PDM data output
PDM lefꢀriꢁgt select
Ground
LR select
GND
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6 Footprint and stencil recommendation
6
Footprint and stencil recommendation
The acoustic port hole diameter in the PCB should be larger than the acoustic port hole diameter of the MEMS microphone to
ensure optimal performance. A PCB sound port size of diameter 0.6 mm is recommended.
The board pad and stencil aperture recommendations shown in Figure 13 are based on Solder Mask Defined (SMD) pads. The
specific design rules of the board manufacturer should be considered for individual design optimizations or adaptations.
Figure 13
Footprint and stencil recommendation
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7 Packing information
7
Packing information
For shipping and assembly the Infineon microphones are packed in product specific tape-and-reel carriers. A detailed drawing of
the carrier can be seen in Figure 14
Figure 14
Table 8
IM69D128SV01 tape and reel packing information
IM69D128SV01 packaging information
Product
Type code
Reel diameter
13"
Quantity per reel
IM69D128SV01
I69D18
5000
Datasheet
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8 Reflow soldering and board assembly
8
Reflow soldering and board assembly
Infineon MEMS microphones are qualified in accordance with the IPC/JEDEC J-STD-020D-01. The moisture sensitivity
level of MEMS microphones is rated as MSL1. For PCB assembly of the MEMS microphone the widely used reflow
soldering using a forced convection oven is recommended.
The soldering profile should be in accordance with the recommendations of the solder paste manufacturer to reach
an optimal solder joint quality. The reflow profile shown in Figure 15 is recommended for board manufacturing with
Infineon MEMS microphones.
Figure 15
Table 9
Recommended reflow profile
Reflow profile limits
Profile feature
Temperature Min (Tsmin
Pb-Free assembly
150 °C
Sn-Pb Eutectic assembly
100 °C
)
Temperature Max (Tsmax
Time (Tsmin to Tsmax) (ts)
Ramp-up rate (TL to TP)
)
200 °C
150 °C
60-120 seconds
3 °C/second max.
217 °C
60-120 seconds
3 °C/second max.
183 °C
Liquidous temperature (TL)
Time (tL) maintained above TL
Peak Temperature (Tp)
60-150 seconds
260°C +0°C/-5°C
60-150 seconds
235°C +0°C/-5°C
Time within 5°C of actual peak
temperature (tp) 6)
20-40 seconds
10-30 seconds
Ramp-down rate
6 °C/second max.
8 minutes max.
6 °C/second max.
6 minutes max.
Time 25°C to peak temperature
Note:
For further information please consult the 'General recommendation for assembly of Infineon packages'
document which is available on the Infineon Technologies web page
6
Tolerance for peak profile temperature (Tp) is defined as a supplier minimum and a user maximum
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8 Reflow soldering and board assembly
The MEMS microphones can be handled using industry standard pick and place equipment. Care should be taken to
avoid damage to the microphone structure as follows:
•
•
•
Do not pick the microphone with vacuum tools which make contact with the microphone acoustic port hole.
The microphone acoustic port hole should not be exposed to vacuum, this can destroy or damage the MEMS.
Do not blow air into the microphone acoustic port hole. If an air blow cleaning process is used, the port hole must
be sealed to prevent particle contamination.
•
•
It is recommended to perform the PCB assembly in a clean room environment in order to avoid microphone
contamination.
Air blow and ultrasonic cleaning procedures shall not be applied to MEMS Microphones. A no-clean paste is
recommended for the assembly to avoid subsequent cleaning steps. The microphone MEMS can be severely
damaged by cleaning substances.
•
•
To prevent the blocking or partial blocking of the sound port during PCB assembly, it is recommended to cover
the sound port with protective tape during PCB sawing or system assembly.
Do not use excessive force to place the microphone on the PCB. The use of industry standard pick and place tools
is recommended in order to limit the mechanical force exerted on the package.
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9 Reliability specifications
9
Reliability specifications
The microphone sensitivity afer stress must deviate by no more than 3dB from the initial value.
Table 10
Test
Reliability specification
Abbreviation Test Condition
Standard
Low Temperature Operating Life
Low Temperature Storage Life
High Temperature Operation Life
High Temperature Storage Life
LTOL
LTSL
Ta=-40°C, VDD=3.6V, 1000 hours
Ta=-40°C, 1000 hours
JESD22-A108
JESD22-A119
HTOL
HTSL
Ta=+125°C, VDD=3.6V, 1000 hours JESD22-A108
JESD22-A103
Ta=+125°C, 1000 hours
Temperature Cycling
PC + TC
Pre conditioning MSL-1
JESD22-A113
JESD22-A104
1000 cycles, -40°C to +125°C, 30
minutes per cycle
Temperature Humidity Bias
PC + THB
Pre conditioning MSL-1
JESD22-A113
JESD22-A101
Ta=+85°C, R.H = 85%, VDD=3.6V,
1000 hours
Vibration Test
VVF
MS
20Hz to 2000Hz with a peak
IEC 60068-2-6
acceleration of 20g in X, Y, and Z
for 4 minutes each, total 4 -cycles
Mechanical Shock
Reflow Solder7)
10000g/0.1msec direction x,y,z, 5 IEC 60068-2-27
shocks in each direction, 5 shocks
in total
RS
3 reflow cycles, peak temperature IPC-JEDEC J-STD-020D-01
= +260°C
Electrostatic Discharge -System
Level Test
ESD - SLT
3 discharges of 8kV direct contact IEC-61000-4-2
to lid while Vdd is supplied
according to the operational
modes; (Vdd ground is separated
from earth ground)
Electrostatic Discharge - Human
Body Model
ESD - HBM
ESD - CDM
1 pulse of 2kV between all I/O pin JEDEC-JS001
combinations
Electrostatic Discharge - Charged
Device Model
3 discharges of 500V direct
contact to I/O pins.
JEDEC JS-002
7
The microphone sensitivity must deviate by no more than 1dB from the initial value afer 3 reflow cycles.
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9 Reliability specifications
9.1
Environmental robustness
Infineon’s latest Sealed Dual Membrane MEMS technology delivers high ingress protection (IP57) at a microphone
level. The sealed MEMS design prevents water or dust from entering between membrane and backplate, preventing
mechanical blockage or electric leakage issues commonly observed in MEMS microphones. Microphones built with
the Sealed Dual Membrane technology can be used to create IP68 devices, requiring only minimal mesh protection.
Table 11
Environmental robustness
Test Standard
Test Condition
IP5x dust resistance8)
Arizona dust A4 coarse, vertical orientation, sound hole upwards, 10
cycles (15 minutes sedimentation, 6 sec blowing)
IPx7 water immersion9)
Temporary immersion of 1 meters for 30 minutes. Microphone tested 2
hours afer removal
8
The number "5" stands for the dust ingress rating or the capacity to withstand the effects of fine, abrasive dust particles.
The "7" specifies the higher water immersion rating.
9
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Datasheet
Revision history
Revision history
Document
version
Date of
Description of changes
release
v1.00
v1.01
2023-01-05
2023-01-18
Initial datasheet release
Corrected package information
Datasheet
18
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2023-01-18
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2023-01-18
Published by
Infineon Technologies AG
81726 Munich, Germany
Important notice
Warnings
The information given in this document shall in no
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Infineon’s XENSIV™ MEMS analog microphone IM70A135 is a compact high-performance microphone with a very high acoustic overload point of 135 dBSPL and a size of only 3.50 x 2.65 x 1.00 mm3. This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level. The small size makes this microphone especially suited for TWS earbud applications.
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Infineon’s XENSIV™ MEMS analog microphone IM73A135 sets a new performance benchmark in MEMS microphones. A best-in-class signal to noise ratio (SNR) of 73 dB and a high acoustic overload point of 135 dBSPL enable clear audio pick up of the quietest and the loudest sounds. This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level. The IM73A135 allows designers to reach a level of high audio performance that was previously only achievable by ECMs while at the same time reaping the benefits inherent in MEMS technology.
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Ultra-low noise digital XENSIVTM MEMS microphone IM73D122 is designed for applications which require a very high SNR (low self-noise) and a high sensitivity. The flat frequency response (20Hz low-frequency roll-off) and tight manufacturing tolerance improve performance of multi-microphone (array) applications. This microphone is based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level.
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