IMBG65R057M1H [INFINEON]
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性,从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R057M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装,基于先进的英飞凌碳化硅沟槽技术,适于大功率应用。 该器件旨在提高系统性能,缩减尺寸,增强可靠性。;型号: | IMBG65R057M1H |
厂家: | Infineon |
描述: | CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性,从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R057M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装,基于先进的英飞凌碳化硅沟槽技术,适于大功率应用。 该器件旨在提高系统性能,缩减尺寸,增强可靠性。 |
文件: | 总15页 (文件大小:1558K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IMBG65R057M1H
MOSFET
PG-TO263-7-12
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
Theꢀ650ꢀVꢀCoolSiC™ꢀisꢀbuiltꢀoverꢀtheꢀsolidꢀsiliconꢀcarbideꢀtechnology
developedꢀinꢀInfineonꢀinꢀmoreꢀthanꢀ20ꢀyears.ꢀLeveragingꢀtheꢀwideꢀbandgap
SiCꢀmaterialꢀcharacteristics,ꢀtheꢀ650VꢀCoolSiC™ꢀMOSFETꢀoffersꢀaꢀunique
combinationꢀofꢀperformance,ꢀreliabilityꢀandꢀeaseꢀofꢀuse.ꢀSuitableꢀforꢀhigh
temperatureꢀandꢀharshꢀoperations,ꢀitꢀenablesꢀtheꢀsimplifiedꢀandꢀcost
effectiveꢀdeploymentꢀofꢀtheꢀhighestꢀsystemꢀefficiency.
Tab
1
2
3
4
5
6
7
Features
•ꢀOptimizedꢀswitchingꢀbehaviorꢀatꢀhigherꢀcurrents
•ꢀCommutationꢀrobustꢀfastꢀbodyꢀdiodeꢀwithꢀlowꢀQf
•ꢀSuperiorꢀgateꢀoxideꢀreliability
•ꢀTj,max=175°Cꢀandꢀexcellentꢀthermalꢀbehavior
•ꢀLowerꢀRDS(on)ꢀandꢀpulseꢀcurrentꢀdependencyꢀonꢀtemperature
•ꢀIncreasedꢀavalancheꢀcapability
Drain
Tab
*1
•ꢀCompatibleꢀwithꢀstandardꢀdriversꢀ(recommendedꢀdrivingꢀvoltage:ꢀ0V-18V)
•ꢀKelvinꢀsourceꢀprovidesꢀupꢀtoꢀ4ꢀtimesꢀlowerꢀswitchingꢀlosses
Gate
Pin 1
Driver
Source
Pin 2
Power
Source
Pin 3-7
Benefits
*1: Internal body diode
•ꢀUniqueꢀcombinationꢀofꢀhighꢀperformance,ꢀhighꢀreliabilityꢀandꢀeaseꢀofꢀuse
•ꢀEaseꢀofꢀuseꢀandꢀintegration
•ꢀSuitableꢀforꢀtopologiesꢀwithꢀcontinuousꢀhardꢀcommutation
•ꢀHigherꢀrobustnessꢀandꢀsystemꢀreliability
•ꢀEfficiencyꢀimprovement
•ꢀReducedꢀsystemꢀsizeꢀleadingꢀtoꢀhigherꢀpowerꢀdensity
Potentialꢀapplications
•ꢀTelecomꢀandꢀServerꢀSMPS
•ꢀUPSꢀ(uninterruptableꢀpowerꢀsupplies)
•ꢀSolarꢀPVꢀinverters
•ꢀEVꢀchargingꢀinfrastructure
•ꢀEnergyꢀstorageꢀandꢀbatteryꢀformation
•ꢀClassꢀDꢀamplifiers
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.
Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDSꢀ@ꢀTJꢀ=ꢀ25ꢀ°C
RDS(on),typ
Value
650
57
Unit
V
mΩ
mΩ
nC
A
RDS(on),max
QG,typ
74
28
IDM
84
Qossꢀ@ꢀ400ꢀV
Eossꢀ@ꢀ400ꢀV
65
nC
µJ
9.8
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
65R057M1
RelatedꢀLinks
IMBG65R057M1H
PG-TO263-7-12
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2021-12-10
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMBG65R057M1H
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Operating range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2021-12-10
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMBG65R057M1H
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTJꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-
-
-
-
39
28
TCꢀ=ꢀ25ꢀ°C
A
Continuous DC drain current1)
ID
TCꢀ=ꢀ100ꢀ°C
Peak drain current2)
IDM
EAS
EAR
IAS
-
-
-
-
-
-
-
-
-
-
-
-
84
A
TCꢀ=ꢀ25ꢀ°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFETꢀdv/dtꢀruggedness
Gate source voltage (static)3)
Gate source voltage (transient)
Power dissipation
-
142
0.71
5.3
200
23
mJ
mJ
A
IDꢀ=ꢀ5.3ꢀA,ꢀVDDꢀ=ꢀ50ꢀV;ꢀseeꢀtableꢀ11
-
IDꢀ=ꢀ5.3ꢀA,ꢀVDDꢀ=ꢀ50ꢀV;ꢀseeꢀtableꢀ11
-
-
dv/dt
VGS
VGS
Ptot
Tstg
TJ
-
V/ns VDSꢀ=ꢀ0...400ꢀV
-5
-7
-
V
static
25
V
tpulse,positiveꢀ<=ꢀ1%ꢀdutyꢀcycle/fsw
161
150
175
n.a.
W
°C
°C
TCꢀ=ꢀ25ꢀ°C
Storage temperature
-55
-55
-
-
-
Operating junction temperature
Mounting torque
-
Ncm -
-
-
-
-
39
26
VGS=18V,ꢀTCꢀ=ꢀ25ꢀ°C
VGS=0V,ꢀTCꢀ=ꢀ25ꢀ°C
Continuous reverse drain current1)
ISDC
A
Repetitive peak reverse drain current1) ISRM
-
-
-
-
84
A
V
TCꢀ=ꢀ25ꢀ°C,ꢀpulseꢀwidthꢀtp<=250ns
Vrms,ꢀTCꢀ=ꢀ25ꢀ°C,ꢀtꢀ=ꢀ1ꢀmin
Insulation withstand voltage
VISO
n.a.
1)ꢀLimitedꢀbyꢀTJ,max
2)ꢀPulseꢀwidthꢀtpꢀlimitedꢀbyꢀTJ,max
3) The maximum gate-source voltage in the application design should be in accordance to IPC-9592B
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2021-12-10
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMBG65R057M1H
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.93
62
Thermal resistance, junction - case
RthJC
-
-
-
-
°C/W -
Thermal resistance, junction - ambient RthJA
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient
for SMD version
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
RthJA
-
-
35
-
45
°C/W
Soldering temperature, wave- & reflow
soldering allowed
Tsold
260
°C
reflow MSL1
3ꢀꢀꢀꢀꢀOperatingꢀrange
Tableꢀ4ꢀꢀꢀꢀꢀOperatingꢀrange
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate-source voltage operating range
including undershoots1)
VGS
-2
-
20
V
-
1)ꢀImportantꢀnote:ꢀtheꢀselectionꢀofꢀpositiveꢀandꢀnegativeꢀgate-sourceꢀvoltagesꢀimpactsꢀtheꢀlong-termꢀbehaviorꢀofꢀthe
device.TheꢀdesignꢀguidelinesꢀdescribedꢀinꢀtheꢀCoolSiCTMꢀMOSFETꢀ650ꢀVꢀM1ꢀtrenchꢀpowerꢀdeviceꢀapplicationꢀnote
AN_1907_PL52_1911_144109 must be considered to ensure sound operation of the device over the planned lifetime.
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2021-12-10
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMBG65R057M1H
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTJꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ5ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3.5
Typ.
-
Max.
-
Drain-source breakdown voltage
Gate threshold voltage1)
V(BR)DSS
VGS(th)
V
V
VGSꢀ=ꢀ0ꢀV,ꢀIDꢀ=ꢀ0.5ꢀmA
VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ5ꢀmA
4.5
5.7
-
-
1
3
150
-
VDSꢀ=ꢀ650ꢀV,ꢀVGSꢀ=ꢀ0ꢀV,ꢀTJꢀ=ꢀ25ꢀ°C
VDSꢀ=ꢀ650ꢀV,ꢀVGSꢀ=ꢀ0ꢀV,ꢀTJꢀ=ꢀ175ꢀ°C
Zero gate voltage drain current
Gate leakage current
IDSS
µA
nA
Ω
IGSS
-
-
100
VGSꢀ=ꢀ20ꢀV,ꢀVDSꢀ=ꢀ0ꢀV
-
-
0.057 0.074
0.080
VGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ16.7ꢀA,ꢀTJꢀ=ꢀ25ꢀ°C
VGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ16.7ꢀA,ꢀTJꢀ=175ꢀ°C
Drain-source on-state resistance
Internal gate resistance
RDS(on)
RG
-
-
8.0
-
Ω
fꢀ=ꢀ1ꢀMHz
Tableꢀ6ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
930
11
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Crss
Coss
Qoss
-
-
-
-
-
pF
pF
pF
nC
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz
calculationꢀbasedꢀonꢀCoss
Reverse transfer capacitance
Output capacitance2)
Output charge2)
-
107
65
139
84
Effective output capacitance, energy
related3)
VGSꢀ=ꢀ0ꢀV,
VDSꢀ=ꢀ0...400ꢀV
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
122
162
6.4
8.8
13.6
7
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
Effective output capacitance, time
related4)
IDꢀ=ꢀconstant,ꢀVGSꢀ=ꢀ0ꢀV,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
VDSꢀ=ꢀ0...400ꢀV
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ16.7ꢀA,
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ10
Turn-on delay time
Rise time
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ16.7ꢀA,
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ10
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ16.7ꢀA,
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ10
Turn-off delay time
Fall time
td(off)
tf
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ16.7ꢀA,
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ10
1)ꢀTestedꢀafterꢀ1ꢀmsꢀpulseꢀatꢀVGSꢀ=ꢀ+20ꢀV
2)ꢀMaximumꢀspecificationꢀisꢀdefinedꢀbyꢀcalculatedꢀsixꢀsigmaꢀupperꢀconfidenceꢀbound
3)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400ꢀV
4)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400ꢀV
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2021-12-10
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMBG65R057M1H
Tableꢀ7ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ16.7ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
-
7
-
nC
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ16.7ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV
-
-
6
-
-
nC
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ16.7ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV
28
nC
Tableꢀ8ꢀꢀꢀꢀꢀBodyꢀdiodeꢀcharacteristics
Values
Typ.
4.0
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Drain-source reverse voltage
MOSFET forward recovery time
VSD
tfr
-
-
V
VGSꢀ=ꢀ0ꢀV,ꢀISꢀ=ꢀ16.7ꢀA,ꢀTJꢀ=ꢀ25ꢀ°C
VDDꢀ=ꢀ400ꢀV,ꢀIS0ꢀ=ꢀ16.7ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
diS/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ9
-
-
-
19.4
69
-
-
-
ns
VDDꢀ=ꢀ400ꢀV,ꢀIS0ꢀ=ꢀ16.7ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
diS/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ9
MOSFET forward recovery charge
Qf
nC
A
MOSFET peak forward recovery
current
VDDꢀ=ꢀ400ꢀV,ꢀIS0ꢀ=ꢀ16.7ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
diS/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ9
Ifrm
6.7
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2021-12-10
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMBG65R057M1H
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
200
103
102
101
100
10-1
10-2
10-3
1 µs
150
100
50
10 µs
100 µs
1 ms
10 ms
DC
0
0
25
50
75
100
125
150
175
100
101
102
103
TCꢀ[°C]
VDSꢀ[V]
Ptot=f(TC)
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
102
101
1 µs
100
10 µs
0.5
100
100 µs
0.2
0.1
0.05
1 ms
10-1
10-2
10-3
10-1
0.02
0.01
10 ms
single pulse
DC
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tP);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2021-12-10
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMBG65R057M1H
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
175
175
150
125
100
75
150
125
100
75
20 V
18 V
20 V
18 V
15 V
12 V
15 V
12 V
50
50
25
25
10 V
8 V
10 V
8 V
0
0
0
5
10
15
20
0
5
10
15
20
VDSꢀ[V]
VDSꢀ[V]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
ID=f(VDS);ꢀTj=150ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.18
2.0
0.17
0.16
0.15
1.5
1.0
0.5
10 V 12 V
15 V
18 V
20 V
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150 175
IDꢀ[A]
TJꢀ[°C]
RDS(on)=f(ID);ꢀTj=150ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(Tj);ꢀID=16.7ꢀA;ꢀVGS=18ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2021-12-10
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMBG65R057M1H
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
150
20
18
16
14
12
10
8
120
90
400 V
60
175 °C
6
30
0
4
25 °C
2
0
0
2
4
6
8
10
12
14
16
18
20
0
5
10
15
20
25
30
VGSꢀ[V]
Qgateꢀ[nC]
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj
VGS=f(Qgate);ꢀID=16.7ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ11:ꢀTyp.ꢀreverseꢀcharacteristics
Diagramꢀ12:ꢀTyp.ꢀreverseꢀcharacteristics
103
103
102
102
25 °C
101
101
175 °C
175 °C
25 °C
100
100
10-1
10-1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VSDꢀ[V]
VSDꢀ[V]
ISD=f(VSD);ꢀVGS=0ꢀV;ꢀparameter:ꢀTj
ISD=f(VSD);ꢀVGS=18ꢀV;ꢀparameter:ꢀTj
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2021-12-10
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMBG65R057M1H
Diagramꢀ13:ꢀAvalancheꢀenergy
Diagramꢀ14:ꢀDrain-sourceꢀbreakdownꢀvoltage
200
690
680
670
660
650
640
630
620
150
100
50
0
25
55
85
115
145
175
-50
-25
0
25
50
75
100 125 150 175
TJꢀ[°C]
TJꢀ[°C]
EAS=f(Tj);ꢀID=5.3ꢀA;ꢀVDD=50ꢀV
V(BR)DSS=f(Tj);ꢀID=0.5ꢀmA
Diagramꢀ15:ꢀTyp.ꢀcapacitances
Diagramꢀ16:ꢀTyp.ꢀCossꢀstoredꢀenergy
104
20
103
102
101
100
15
10
5
Ciss
Coss
Crss
0
0
50 100 150 200 250 300 350 400 450 500
0
50 100 150 200 250 300 350 400 450 500
VDSꢀ[V]
VDSꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz
Eoss=f(VDS)
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2021-12-10
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMBG65R057M1H
Diagramꢀ17:ꢀTyp.ꢀQossꢀoutputꢀcharge
100
90
80
70
60
50
40
30
20
10
0
0
50 100 150 200 250 300 350 400 450 500
VDSꢀ[V]
Qoss=f(VDS
)
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2021-12-10
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMBG65R057M1H
6ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ9ꢀꢀꢀꢀꢀBodyꢀdiodeꢀcharacteristicsꢀ(650VꢀCoolSiC)
Test circuit for body diode characteristics
Body diode recovery waveform
VDS
+
VDD
VDS
RG2
IS
I
SO
-
tfr
IS
VDD
dIs / dt
RG1
Ifrm
Qf
Ifrm
Tableꢀ10ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(650VꢀCoolSiC)
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
10%
VDS
VDD
VGS
VGS
td(off)
tf
td(on)
ton
tr
RG
toff
Tableꢀ11ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(650VꢀCoolSiC)
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DSS
VDD
ID
VDS
VDS
VDS
ID
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2021-12-10
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMBG65R057M1H
7ꢀꢀꢀꢀꢀPackageꢀOutlines
MILLIMETERS
DIMENSIONS
MIN.
4.30
0.00
2.30
0.50
0.00
0.40
1.17
9.05
5.90
9.80
9.36
0.00
8.40
MAX.
4.50
0.20
2.50
0.70
0.15
0.60
1.37
9.45
6.10
10.20
9.56
0.30
8.60
A
A1
A2
b
b1
c
c1
D
DOCUMENT NO.
Z8B00189674
D1
E
E1
E2
E3
e
REVISION
01
SCALE 5:1
1.27
H
15.00
5mm
0
1
2
3
4
L
4.20
0.70
1.70
5.20
1.30
2.30
L1
L2
L3
P
EUROPEAN PROJECTION
2.70
0.35
4.02
2.03
1.40
0.00°
0.55
4.22
2.23
1.60
8.00°
Q
R
ISSUE DATE
14.02.2020
S
THETA
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-7-12,ꢀdimensionsꢀinꢀmm
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2021-12-10
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMBG65R057M1H
8ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ12ꢀꢀꢀꢀꢀRelatedꢀLinks
• IFXꢀCoolSiCꢀM1ꢀWebpage:ꢀwww.infineon.com
• IFXꢀCoolSiCꢀM1ꢀapplicationꢀnote:ꢀwww.infineon.com
• IFXꢀCoolSiCꢀM1ꢀsimulationꢀmodel:ꢀwww.infineon.com
• IFXꢀDesignꢀtools:ꢀwww.infineon.com
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2021-12-10
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice
IMBG65R057M1H
RevisionꢀHistory
IMBG65R057M1H
Revision:ꢀ2021-12-10,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2021-12-10
Trademarks
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intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
15
Rev.ꢀ2.0,ꢀꢀ2021-12-10
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