IMYH200R100M1H [INFINEON]
The CoolSiC™ 2000 V 100 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.;
| 型号： | IMYH200R100M1H |
| 厂家： | 
Infineon |
| 描述： | The CoolSiC™ 2000 V 100 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems. |
| 文件： | 总16页 (文件大小：1842K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
™
CoolSiC 2000 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology
Features
• VDSS = 2000 V at Tvj = 25°C
• IDCC = 26 A at Tc = 25°C
• RDS(on) = 100 mΩ at VGS = 18 V, Tvj = 25°C
• Very low switching losses
• Benchmark gate threshold voltage, VGS(th) = 4.5 V
• Robust body diode for hard commutation
• .XT interconnection technology for best-in-class thermal performance
Potential applications
• String inverter
• Solar power optimizer
• EV-Charging
Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
• Please also note the application note AN2019-05 for power and thermal cycling
Description
1 – drain
2 – source
3 – Kelvin sense contact
4 – gate
Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L)
Type
Package
Marking
IMYH200R100M1H
PG-TO247-4-PLUS-NT14
20M1H100
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10
2023-01-16
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Body diode (MOSFET) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
1
2
3
4
5
6
Datasheet
2
Revision 1.10
2023-01-16
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
150
Storage temperature
Soldering temperature
Tstg
-55
°C
°C
Tsold
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
260
Thermal resistance,
junction-ambient
Rth(j-a)
Rth(j-c)
62
K/W
K/W
MOSFET/body diode
thermal resistance,
junction-case
0.53
0.69
2
MOSFET
Table 2
Maximum rated values
Symbol Note or test condition
Parameter
Values
2000
26
Unit
Drain-source voltage
VDSS
IDDC
Tvj ≥ 25 °C
VGS = 18 V
V
A
Continuous DC drain
current for Rth(j-c,max)
limited by Tvj(max)
Tc = 25 °C
,
Tc = 100 °C
19
Peak drain current, tp
limited by Tvj(max)
IDM
VGS
VGS
Ptot
VGS = 18 V
57
A
V
Gate-source voltage, max.
transient voltage1)
tp ≤ 0.5 µs, D < 0.01
-10/23
-7/20
Gate-source voltage, max.
static voltage
V
Power dissipation, limited
by Tvj(max)
Tc = 25 °C
217
108
W
Tc = 100 °C
1)
Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design
guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned
lifetime.
Table 3
Recommended values
Symbol Note or test condition
VGS(on)
Parameter
Values
Unit
Recommended turn-on
gate voltage
15...18
V
Recommended turn-off
gate voltage
VGS(off)
-5...0
V
Datasheet
3
Revision 1.10
2023-01-16
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
2 MOSFET
Table 4
Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
100
Unit
Min.
Max.
Drain-source on-state
resistance
RDS(on) ID = 10 A
Tvj = 25 °C,
VGS(on) = 18 V
131
mΩ
Tvj = 100 °C,
VGS(on) = 18 V
170
300
108
Tvj = 175 °C,
VGS(on) = 18 V
Tvj = 25 °C,
VGS(on) = 15 V
142
5.5
Gate-source threshold
voltage
VGS(th) ID = 6 mA, VDS = VGS
(tested afꢀr 1 ms pulse
at VGS = 20 V)
Tvj = 25 °C
3.5
4.5
3.6
V
Tvj = 175 °C
Zero gate-voltage drain
current
IDSS
VDS = 2000 V, VGS = 0 V
Tvj = 25 °C
Tvj = 175 °C
VGS = 23 V
VGS = -10 V
200
µA
nA
10
Gate leakage current
IGSS
VDS = 0 V
100
-100
Forward transconductance
Internal gate resistance
Input capacitance
gfs
RG,int
Ciss
ID = 10 A, VDS = 20 V
5
S
Ω
f = 100 kHz, VAC = 25 mV
6.4
VDD = 1200 V, VGS = 0 V, f = 100 kHz,
VAC = 25 mV
1215
pF
Output capacitance
Coss
Crss
Eoss
QG
VDD = 1200 V, VGS = 0 V, f = 100 kHz,
VAC = 25 mV
40
3
pF
pF
µJ
nC
nC
nC
ns
Reverse transfer
capacitance
VDD = 1200 V, VGS = 0 V, f = 100 kHz,
VAC = 25 mV
Coss stored energy
VDD = 1200 V, VGS = 0 V, f = 100 kHz,
VAC = 25 mV
30
55
14
5.6
Total gate charge
VDD = 1200 V, ID = 10 A, VGS = -2/18 V, turn-on
pulse
Plateau gate charge
Gate-to-drain charge
Turn-on delay time
QGS(pl) VDD = 1200 V, ID = 10 A, VGS = -2/18 V, turn-on
pulse
QGD
VDD = 1200 V, ID = 10 A, VGS = -2/18 V, turn-on
pulse
td(on)
VDD = 1200 V, ID = 10 A,
VGS = -2/18 V,
Tvj = 25 °C
2
3
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = -2 V
(table continues...)
Datasheet
4
Revision 1.10
2023-01-16
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
2 MOSFET
Table 4
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min.
Typ.
Max.
Rise time
tr
td(off)
tf
VDD = 1200 V, ID = 10 A,
VGS = -2/18 V,
Tvj = 25 °C
3
4
ns
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = -2 V
Turn-off delay time
VDD = 1200 V, ID = 10 A,
VGS = -2/18 V,
Tvj = 25 °C
21
28
ns
ns
µJ
µJ
µJ
°C
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = -2 V
Fall time
VDD = 1200 V, ID = 10 A,
VGS = -2/18 V,
Tvj = 25 °C
5
5
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = -2 V
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
Tvj
VDD = 1200 V, ID = 10 A,
VGS = -2/18 V,
Tvj = 25 °C
280
570
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = -2 V
VDD = 1200 V, ID = 10 A,
VGS = -2/18 V,
Tvj = 25 °C
50
50
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = -2 V
VDD = 1200 V, ID = 10 A,
VGS = -2/18 V,
Tvj = 25 °C
470
900
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = -2 V
Virtual junction
temperature
-55
175
Note:
The chip technology was characterized up to 100 kV/µs. The measured dV/dt was limited by measurement
test setup and package.
Dynamic test circuit see Fig. F.
Datasheet
5
Revision 1.10
2023-01-16
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
3 Body diode (MOSFET)
3
Body diode (MOSFET)
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
Values
2000
27
Unit
Drain-source voltage
VDSS
ISDC
Tvj ≥ 25 °C
VGS = 0 V
V
A
Continuous reverse drain
current for Rth(j-c,max)
limited by Tvj(max)
Tc = 25 °C
,
Tc = 100 °C
21
Peak reverse drain current,
tp limited by Tvj(max)
ISM
VGS = 0 V
31
A
Table 6
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
3.7
Unit
Min.
Max.
Drain-source reverse
voltage
VSD
ISD = 10 A, VGS = 0 V
Tvj = 25 °C
Tvj = 100 °C
Tvj = 175 °C
5.5
V
3.6
3.5
MOSFET forward recovery
charge
Qfr
VDD = 1200 V, ISD = 10 A, Tvj = 25 °C
250
nC
A
VGS=-2 V, RGS(on) = 2 Ω,
Tvj = 175 °C
247
Qfr includes also QC
MOSFET peak forward
recovery current
Ifrm
VDD = 1200 V,
Tvj = 25 °C
7
8
ISD = 10 A, VGS=-2 V,
diSD/dt = 380 A/µs, Qfr
includes also QC
Tvj = 175 °C
MOSFET forward recovery
energy
Efr
Tvj
VDD = 1200 V, ISD = 10 A, Tvj = 25 °C
140
280
µJ
°C
VGS=-2 V, RGS(on) = 2 Ω,
Tvj = 175 °C
Qfr includes also QC
Virtual junction
temperature
-55
175
Datasheet
6
Revision 1.10
2023-01-16
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
4 Characteristics diagrams
4
Characteristics diagrams
Reverse bias safe operating area (RBSOA)
IDS = f(VDS
Tvj ≤ 175 °C, VGS = 0/18 V, Tc = 25 °C
Power dissipation as a function of case temperature
limited by bond wire
Ptot = f(Tc)
)
70
350
60
50
40
30
20
10
0
300
250
200
150
100
50
0
0
300
600
900
1200 1500 1800 2100
0
25
50
75
100
125
150
175
Maximum DC drain to source current as a function of Maximum source to drain current as a function of case
case temperature limited by bond wire
temperature limited by bond wire
IDS = f(Tc)
ISD = f(Tc)
VGS = 0 V
35
30
25
20
15
10
5
35
30
25
20
15
10
5
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
Datasheet
7
Revision 1.10
2023-01-16
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
4 Characteristics diagrams
Typical transfer characteristic
Typical gate-source threshold voltage as a function of
junction temperature
VGS(th) = f(Tvj)
IDS = f(VGS
)
VDS = 20 V, tp = 20 µs
ID = 6 mA
250
6
5
4
3
2
1
0
200
150
100
50
0
-50 -25
0
25
50
75 100 125 150 175
0
4
8
12
16
20
24
28
Typical output characteristic, VGS as parameter
IDS = f(VDS
Typical output characteristic, VGS as parameter
IDS = f(VDS
)
)
Tvj = 25 °C, tp = 20 µs
Tvj = 175 °C, tp = 20 µs
160
70
140
120
100
80
60
50
40
30
20
10
0
60
40
20
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Datasheet
8
Revision 1.10
2023-01-16
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
4 Characteristics diagrams
Typical on-state resistance as a function of junction
temperature
RDS(on) = f(Tvj)
Typical gate charge
VGS = f(QG)
ID = 10 A, VDS = 1200 V
ID = 10 A
350
300
250
200
150
100
50
18
16
14
12
10
8
6
4
2
0
0
-2
-50 -25
0
25
50
75 100 125 150 175
-3
7
17
27
37
47
57
Typical capacitance as a function of drain-source
voltage
Typical reverse drain voltage as function of junction
temperature
C = f(VDS
)
VSD = f(Tvj)
f = 100 kHz, VGS = 0 V
ISD = 10 A, VGS = 0 V
10000
5
4
3
2
1
0
1000
100
10
1
1
-50 -25
0
25
50
75 100 125 150 175
10
100
1000
Datasheet
9
Revision 1.10
2023-01-16
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
4 Characteristics diagrams
Typical reverse drain current as function of reverse
drain voltage, VGS as parameter
Typical reverse drain current as function of reverse
drain voltage, VGS as parameter
ISD = f(VSD
)
ISD = f(VSD)
Tvj = 25 °C, tp = 20 µs
Tvj = 175 °C, tp = 20 µs
45
45
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Typical switching energy as a function of junction
temperature, test circuit in Fig. F, 2nd device own
body diode: VGS = -2 V
Typical switching energy as a function of drain
current, test circuit in Fig. F, 2nd device own body
diode: VGS = -2 V
E = f(Tvj)
E = f(ID)
VGS = -2/18 V, ID = 10 A, RG,ext = 2 Ω, VDD = 1200 V
VGS = -2/18 V, Tvj = 175 °C, RG,ext = 2 Ω, VDD = 1200 V
1000
800
600
400
200
0
1400
1200
1000
800
600
400
200
0
25
50
75
100
125
150
175
0
3
6
9
12
15
Datasheet
10
Revision 1.10
2023-01-16
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
4 Characteristics diagrams
Typical switching energy losses as a function of gate
Typical switching times as a function of gate
resistance, test circuit in Fig. F, 2nd device own body resistance, test circuit in Fig. F, 2nd device own body
diode: VGS = -2 V
E = f(RG,ext
diode: VGS = -2 V
t = f(RG,ext
)
)
VGS = -2/18 V, ID = 10 A, Tvj = 175 °C, VDD = 1200 V
VGS = -2/18 V, ID = 10 A, Tvj = 175 °C, VDD = 1200 V
1600
200
180
160
140
120
100
80
1400
1200
1000
800
600
400
200
0
60
40
20
0
0
10
20
30
40
50
0
10
20
30
40
50
Typical reverse recovery charge as a function of
Typical reverse recovery current as a function of
reverse drain current slope, test circuit in Fig. F, 2nd
device own body diode: VGS = -2 V
reverse drain current slope, test circuit in Fig. F, 2nd
device own body diode: VGS = -2 V
Qfr = f(diSD/dt )
Ifrm = f(diSD/dt )
VGS = -2/18 V, ISD = 10 A, VDD = 1200 V
VGS = -2/18 V, ISD = 10 A, VDD = 1200 V
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
50
40
30
20
10
0
0
500
1000
1500
2000
2500
3000
0
500
1000
1500
2000
2500
3000
Datasheet
11
Revision 1.10
2023-01-16
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
4 Characteristics diagrams
Typical switching energy losses as a function of dead Max. transient thermal impedance (MOSFET/diode)
time / blanking time, test circuit in Fig. F, 2nd device
own body diode: VGS = -5 V
Zth(j-c),max = f(tp)
D = tp/T
E = f(tdead
)
ID = 10 A, Tvj = 175 °C, RG,ext = 2 Ω, VDD = 1200 V
120
1
100
80
60
40
20
0
0.1
0.01
0.001
1E-6
1E-5
0.0001 0.001
0.01
0.1
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Datasheet
12
Revision 1.10
2023-01-16
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
5 Package outlines
5
Package outlines
PG-TO247-4-PLUS-NT14
PACKAGE - GROUP
NUMBER:
PG-TO247-4-U04
MILLIMETERS
MILLIMETERS
DIMENSIONS
DIMENSIONS
MIN.
4.65
2.16
2.00
0.60
1.10
---
MAX.
4.95
2.66
2.40
0.80
1.30
0.15
1.30
2.10
0.70
26.70
16.30
20.20
0.50
6.65
16.00
MIN.
12.00
2.60
5.00
MAX.
A
A1
A2
b
E1
E2
E3
e
12.80
3.00
7.00
7.62
2.79
2.54
b1
b2
b3
b4
c
e1
e2
H
1.51
5.50
1.71
---
1.10
1.70
0.50
26.00
15.50
19.40
---
K
N
4
D
L
14.30
5.40
5.40
1.75
9.00
14.90
5.70
5.70
2.25
9.50
D1
D2
D3
D4
E
L1
L2
ØP
6.35
15.60
U
aaa
bbb
0.25
0.25
Figure 1
Datasheet
13
Revision 1.10
2023-01-16
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
6 Testing conditions
6
Testing conditions
I,V
VDS
90%
diSD/dt
tfr = ta + tb
Qfr = Qa + Qb
ISD
tfr
ta
tb
10%
t
VGS
Qa
Qb
10% Ifrm
td(on)
td(off)
Ifrm
tr
ton
tf
toff
VSD
Figure A. Definition of switching times
VGS(t)
90% VGS
Figure B. Definition of body diode
switching characteristics
VGS,VDS
Q
97% VDS
VGS = 18 V
10% VGS
t
ID(t)
1% ID
t
VDS
VDS(t)
t, Q
QGS,pl
QG,tot
QGD
Figure D. Definition of QGD
½Lσ
Eon
ʃ VDS*ID*dt
=
Eoff
ʃ VDS*ID*dt
=
t4
t2
second
device
t3
t1
3% VDS
t
L
Cσ
t1
t2
t3
t4
VGS(off)
Figure C. Definition of switching losses
VDD
τ1/r1
τ2/r2
τn/rn
RG
DUT
Tj(t)
p(t)
r1
r2
r3
½Lσ
M
TC
=
Figure F. Dynamic test circuit
Parasitic inductance Lσ,
Parasitic capacitor Cσ,
=
Figure E. Thermal equivalent circuit
Figure 2
Datasheet
14
Revision 1.10
2023-01-16
IMYH200R100M1H
™
CoolSiC 2000 V SiC Trench MOSFET
Revision history
Revision history
Document revision
Date of release Description of changes
0.10
2022-03-08
Preliminary datasheet
1.00
1.01
1.10
2022-10-04
2022-10-06
2023-01-16
Final datasheet
Editorial changes
Change of picture on page 1
Change of product outline drawing on page 13
Editorial changes
Datasheet
15
Revision 1.10
2023-01-16
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Edition 2023-01-16
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