IMZA65R030M1H [INFINEON]

CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R030M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。;


型号：	IMZA65R030M1H
厂家：	Infineon
描述：	CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R030M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。半导体
文件：	总15页 (文件大小：1421K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IMZA65R030M1H

MOSFET

PG-TOꢀ247-4-3

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

Theꢀ650ꢀVꢀCoolSiC™ꢀisꢀbuiltꢀoverꢀtheꢀsolidꢀsiliconꢀcarbideꢀtechnology

developedꢀinꢀInfineonꢀinꢀmoreꢀthanꢀ20ꢀyears.ꢀLeveragingꢀtheꢀwideꢀbandgap

SiCꢀmaterialꢀcharacteristics,ꢀtheꢀ650VꢀCoolSiC™ꢀMOSFETꢀoffersꢀaꢀunique

combinationꢀofꢀperformance,ꢀreliabilityꢀandꢀeaseꢀofꢀuse.ꢀSuitableꢀforꢀhigh

temperatureꢀandꢀharshꢀoperations,ꢀitꢀenablesꢀtheꢀsimplifiedꢀandꢀcost

effectiveꢀdeploymentꢀofꢀtheꢀhighestꢀsystemꢀefficiency.

Tab

Features

•ꢀOptimizedꢀswitchingꢀbehaviorꢀatꢀhigherꢀcurrents

•ꢀCommutationꢀrobustꢀfastꢀbodyꢀdiodeꢀwithꢀlowꢀQ_rr

•ꢀSuperiorꢀgateꢀoxideꢀreliability

•ꢀT_j,max=175°Cꢀandꢀexcellentꢀthermalꢀbehavior

•ꢀLowerꢀR_DS(on)ꢀandꢀpulseꢀcurrentꢀdependencyꢀonꢀtemperature

•ꢀIncreasedꢀavalancheꢀcapability

Drain

Pin 1, Tab

•ꢀCompatibleꢀwithꢀstandardꢀdriversꢀ(recommendedꢀdrivingꢀvoltage:ꢀ18V)

•ꢀKelvinꢀsourceꢀprovidesꢀupꢀtoꢀ4ꢀtimesꢀlowerꢀswitchingꢀlosses

Gate

Pin 4

Driver

Source

Pin 3

Power

Source

Pin 2

Benefits

*1: Internal body diode

•ꢀUniqueꢀcombinationꢀofꢀhighꢀperformance,ꢀhighꢀreliabilityꢀandꢀeaseꢀofꢀuse

•ꢀEaseꢀofꢀuseꢀandꢀintegration

•ꢀSuitableꢀforꢀtopologiesꢀwithꢀcontinuousꢀhardꢀcommutation

•ꢀHigherꢀrobustnessꢀandꢀsystemꢀreliability

•ꢀEfficiencyꢀimprovement

•ꢀReducedꢀsystemꢀsizeꢀleadingꢀtoꢀhigherꢀpowerꢀdensity

Potentialꢀapplications

•ꢀSMPS

•ꢀUPSꢀ(uninterruptableꢀpowerꢀsupplies)

•ꢀSolarꢀPVꢀinverters

•ꢀEVꢀchargingꢀinfrastructure

•ꢀEnergyꢀstorageꢀandꢀbatteryꢀformation

•ꢀClassꢀDꢀamplifiers

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀdriverꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.

Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DSꢀ@ꢀT_Jꢀ=ꢀ25ꢀ°C

R_DS(on),typ

Value

650

Unit

mΩ

R_DS(on),max

Q_G,typ

I_D,pulse

143

114

17.2

Q_ossꢀ@ꢀ400ꢀV

E_ossꢀ@ꢀ400ꢀV

µJ

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IMZA65R030M1H

PG-TO247-4-3

65R030M1

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

IMZA65R030M1H

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

IMZA65R030M1H

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_Jꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

T_Cꢀ=ꢀ25ꢀ°C

Continuous drain current¹⁾

Pulsed drain current²⁾

I_D

T_Cꢀ=ꢀ100ꢀ°C

I_D,pulse

E_AS

143

251

T_Cꢀ=ꢀ25ꢀ°C

I_Dꢀ=ꢀ9.4ꢀA,ꢀV_DDꢀ=ꢀ50ꢀV,ꢀLꢀ=ꢀ5.7ꢀmH;

see table 10

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, single pulse

MOSFETꢀdv/dtꢀruggedness

Gate source voltage (static)

E_AR

I_AS

1.26

9.4

200

I_Dꢀ=ꢀ9.4ꢀA,ꢀV_DDꢀ=ꢀ50ꢀV;ꢀseeꢀtableꢀ10

dv/dt

V_GS

V/ns V_DSꢀ=ꢀ0...400ꢀV

-2

static

Gate source voltage (recommended

driving voltage)

V_GS

t_{pulse,negative}ꢀ<=ꢀ15ꢀns

t_{pulse,positive}ꢀ<=ꢀ1%ꢀdutyꢀcycle/f_sw

Gate source voltage (dynamic)

-5

Power dissipation

P_tot

T_stg

T_J

197

150

175

T_Cꢀ=ꢀ25ꢀ°C

Storage temperature

-55

°C

Operating junction temperature

-55

Mounting torque

Ncm M3 and M3.5 screws

Continuous diode forward current¹⁾

Diode pulse current²⁾

I_S

T_Cꢀ=ꢀ25ꢀ°C

I_S,pulse

V_ISO

143

n.a.

T_Cꢀ=ꢀ25ꢀ°C

Insulation withstand voltage

V_rms,ꢀT_Cꢀ=ꢀ25ꢀ°C,ꢀtꢀ=ꢀ1ꢀmin

¹⁾ꢀLimitedꢀbyꢀT_J,max

²⁾ꢀPulseꢀwidthꢀt_pꢀlimitedꢀbyꢀT_J,max

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

IMZA65R030M1H

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

0.76

Thermal resistance, junction - case

R_thJC

°C/W -

Thermal resistance, junction - ambient R_thJA

°C/W leaded

Thermal resistance, junction - ambient

for SMD version

R_thJA

°C/W n.a.

Soldering temperature, wavesoldering

only allowed at leads

T_sold

260

°C

1.6mm (0.063 in.) from case for 10s

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

IMZA65R030M1H

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_Jꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

650

3.5

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage¹⁾

V_(BR)DSS

V_(GS)th

V_GSꢀ=ꢀ0ꢀV,ꢀI_Dꢀ=ꢀ0.88ꢀmA

V_DSꢀ=ꢀV_GS,ꢀI_Dꢀ=ꢀ8.8ꢀmA

4.5

5.7

150

V_DSꢀ=ꢀ650ꢀV,ꢀV_GSꢀ=ꢀ0ꢀV,ꢀT_Jꢀ=ꢀ25ꢀ°C

V_DSꢀ=ꢀ650ꢀV,ꢀV_GSꢀ=ꢀ0ꢀV,ꢀT_Jꢀ=ꢀ175ꢀ°C

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

I_DSS

µA

Ω

I_GSS

100

V_GSꢀ=ꢀ20ꢀV,ꢀV_DSꢀ=ꢀ0ꢀV

0.030 0.042

0.042

V_GSꢀ=ꢀ18ꢀV,ꢀI_Dꢀ=ꢀ29.5ꢀA,ꢀT_Jꢀ=ꢀ25ꢀ°C

V_GSꢀ=ꢀ18ꢀV,ꢀI_Dꢀ=ꢀ29.5ꢀA,ꢀT_Jꢀ=175ꢀ°C

R_DS(on)

R_G

5.0

Ω

fꢀ=ꢀ1ꢀMHz,ꢀopenꢀdrain

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

Values

Typ.

1643

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Input capacitance

Reverse capacitance

Output capacitance²⁾

Output charge²⁾

C_iss

C_rss

C_oss

Q_oss

V_GSꢀ=ꢀ0ꢀV,ꢀV_DSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz

calculationꢀbasedꢀonꢀC_oss

189

246

148

114

Effective output capacitance, energy

related³⁾

V_GSꢀ=ꢀ0ꢀV,

V_DSꢀ=ꢀ0...400ꢀV

C_o(er)

C_o(tr)

t_d(on)

t_r

214

284

11.6

11.3

19.7

7.0

Effective output capacitance, time

related⁴⁾

I_Dꢀ=ꢀconstant,ꢀV_GSꢀ=ꢀ0ꢀV,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

V_DSꢀ=ꢀ0...400ꢀV

V_DDꢀ=ꢀ400ꢀV,ꢀV_GSꢀ=ꢀ18ꢀV,ꢀI_Dꢀ=ꢀ29.5ꢀA,

R_Gꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9

Turn-on delay time

Rise time

V_DDꢀ=ꢀ400ꢀV,ꢀV_GSꢀ=ꢀ18ꢀV,ꢀI_Dꢀ=ꢀ29.5ꢀA,

R_Gꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9

V_DDꢀ=ꢀ400ꢀV,ꢀV_GSꢀ=ꢀ18ꢀV,ꢀI_Dꢀ=ꢀ29.5ꢀA,

R_Gꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9

Turn-off delay time

Fall time

t_d(off)

t_f

V_DDꢀ=ꢀ400ꢀV,ꢀV_GSꢀ=ꢀ18ꢀV,ꢀI_Dꢀ=ꢀ29.5ꢀA,

R_Gꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9

¹⁾ꢀTestedꢀafterꢀ1ꢀmsꢀpulseꢀatꢀV_GSꢀ=ꢀ+20ꢀV

²⁾ꢀMaximumꢀspecificationꢀisꢀdefinedꢀbyꢀcalculatedꢀsixꢀsigmaꢀupperꢀconfidenceꢀbound

³⁾ꢀC_o(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400ꢀV

⁴⁾ꢀC_o(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400ꢀV

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

IMZA65R030M1H

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

V_DDꢀ=ꢀ400ꢀV,ꢀI_Dꢀ=ꢀ29.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

V_GSꢀ=ꢀ0ꢀtoꢀ18ꢀV

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

Q_gd

Q_g

V_DDꢀ=ꢀ400ꢀV,ꢀI_Dꢀ=ꢀ29.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

V_GSꢀ=ꢀ0ꢀtoꢀ18ꢀV

V_DDꢀ=ꢀ400ꢀV,ꢀI_Dꢀ=ꢀ29.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

V_GSꢀ=ꢀ0ꢀtoꢀ18ꢀV

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics

Values

Typ.

4.0

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Diode forward voltage

Reverse recovery time

V_SD

t_rr

V_GSꢀ=ꢀ0ꢀV,ꢀI_Fꢀ=ꢀ29.5ꢀA,ꢀT_Jꢀ=ꢀ25ꢀ°C

V_Rꢀ=ꢀ400ꢀV,ꢀI_Fꢀ=ꢀ29.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

di_F/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ8

V_Rꢀ=ꢀ400ꢀV,ꢀI_Fꢀ=ꢀ29.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

di_F/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ8

Reverse recovery charge

Q_rr

I_rrm

186

10.0

V_Rꢀ=ꢀ400ꢀV,ꢀI_Fꢀ=ꢀ29.5ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

di_F/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ8

Peak reverse recovery current

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

IMZA65R030M1H

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀSafeꢀoperatingꢀarea

210

10³

10²

10¹

10⁰

10^-1

10^-2

10^-3

1 µs

180

150

120

10 µs

100 µs

1 ms

10 ms

100

125

150

175

10⁰

10¹

10²

10³

T_Cꢀ[°C]

V_DSꢀ[V]

P_tot=f(T_C)

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10³

10⁰

10²

10¹

1 µs

0.5

0.2

10 µs

100 µs

10⁰

10^-1

0.1

0.05

0.02

1 ms

10^-1

10^-2

10^-3

10 ms

0.01

single pulse

10^-2

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJC=f(t_P);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

IMZA65R030M1H

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics

Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics

250

200

150

100

20 V

18 V

20 V

18 V

200

150

100

15 V

12 V

15 V

12 V

10 V

8 V

10 V

8 V

V_DSꢀ[V]

I_D=f(V_DS);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

I_D=f(V_DS);ꢀT_j=125ꢀ°C;ꢀparameter:ꢀV_GS

Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance

Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance

0.110

2.0

20 V

15 V

18 V

10 V

0.090

0.070

0.050

0.030

12 V

1.5

1.0

0.5

100

150

200

250

-50

-25

100 125 150 175

I_Dꢀ[A]

T_Jꢀ[°C]

R_DS(on)=f(I_D);ꢀT_j=150ꢀ°C;ꢀparameter:ꢀV_GS

R_DS(on)=f(T_j);ꢀI_D=29.5ꢀA;ꢀV_GS=18ꢀV

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

IMZA65R030M1H

Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics

Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge

250

200

150

100

400 V

150 °C

25 °C

V_GSꢀ[V]

Q_gateꢀ[nC]

I_D=f(V_GS);ꢀV_DS=20V;ꢀparameter:ꢀT_j

V_GS=f(Q_gate);ꢀI_D=29.5ꢀAꢀpulsed;ꢀparameter:ꢀV_DD

Diagramꢀ11:ꢀTyp.ꢀforwardꢀcharacteristicsꢀofꢀreverseꢀdiode

Diagramꢀ12:ꢀTyp.ꢀchannelꢀreverseꢀcharacteristics

10³

10²

25 °C

150 °C

25 °C

10¹

150 °C

10⁰

10^-1

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V_SDꢀ[V]

I_F=f(V_SD);ꢀparameter:ꢀT_j

I_F=f(V_SD);ꢀV_GS=18ꢀV;ꢀparameter:ꢀT_j

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

IMZA65R030M1H

Diagramꢀ13:ꢀAvalancheꢀenergy

Diagramꢀ14:ꢀDrain-sourceꢀbreakdownꢀvoltage

275

690

680

670

660

650

640

630

250

225

200

175

150

125

100

125

150

175

-50

-25

100 125 150 175

T_Jꢀ[°C]

E_AS=f(T_j);ꢀI_D=9.4ꢀA;ꢀV_DD=50ꢀV

V_BR(DSS)=f(T_j);ꢀI_D=0.88ꢀmA

Diagramꢀ15:ꢀTyp.ꢀcapacitances

Diagramꢀ16:ꢀTyp.ꢀCossꢀstoredꢀenergy

10⁴

Ciss

10³

10²

10¹

Coss

Crss

100

200

300

400

500

50 100 150 200 250 300 350 400 450 500

V_DSꢀ[V]

C=f(V_DS);ꢀV_GS=0ꢀV;ꢀf=250ꢀkHz

E_oss=f(V_DS)

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

IMZA65R030M1H

Diagramꢀ17:ꢀTyp.ꢀQossꢀoutputꢀcharge

140

120

100

50 100 150 200 250 300 350 400 450 500

V_DSꢀ[V]

Q_oss=f(V_DS

)

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

IMZA65R030M1H

5ꢀꢀꢀꢀꢀTestꢀCircuits

Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristicsꢀ(ss)ꢀ(SiC)

Test circuit for diode characteristics

Diode recovery waveform

V_DS

R_G2

I_F

R_G1

Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(ss)ꢀ(SiC)

Switching times test circuit for inductive load

Switching times waveform

V_DS

90%

10%

V_DS

V_GS

t_d(off)

t_f

t_d(on)

t_on

t_r

R_G

t_off

Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)ꢀ(SiC)

Unclamped inductive load test circuit

Unclamped inductive waveform

V_(BR)DS

I_D

V_DS

I_D

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

IMZA65R030M1H

6ꢀꢀꢀꢀꢀPackageꢀOutlines

MILLIMETERS

MIN. MAX.

DIMENSIONS

4.90

2.31

1.90

0.05

1.10

0.65

5.10

2.51

2.10

0.25

1.30

0.79

0.20

1.44

0.66

21.10

16.85

1.35

25.27

5.10

15.90

13.50

2.60

1.34

0.58

20.90

16.25

1.05

24.97

4.90

15.70

13.10

2.40

DOCUMENT NO.

Z8B00184785

REVISION

SCALE 2:1

10mm

5.08

2.79

2.54

19.80

20.10

4.30

3.70

7.40

2.60

6.00

EUROPEAN PROJECTION

øP

øP1

øP2

3.50

7.00

2.40

5.60

6.15

ISSUE DATE

21.08.2017

9.80

6.00

10.20

6.40

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO247-4-3,ꢀdimensionsꢀinꢀmm

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

IMZA65R030M1H

7ꢀꢀꢀꢀꢀAppendixꢀA

Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks

• IFXꢀCoolSiCꢀM1ꢀWebpage:ꢀwww.infineon.com

• IFXꢀCoolSiCꢀM1ꢀapplicationꢀnote:ꢀwww.infineon.com

• IFXꢀCoolSiCꢀM1ꢀsimulationꢀmodel:ꢀwww.infineon.com

• IFXꢀDesignꢀtools:ꢀwww.infineon.com

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice

IMZA65R030M1H

RevisionꢀHistory

IMZA65R030M1H

Revision:ꢀ2021-03-17,ꢀRev.ꢀ2.0

Previous Revision

Revision Date

Subjects (major changes since last revision)

Release of final version

2.0

2021-03-17

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Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2021-03-17

IMZA65R030M1H [INFINEON]

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