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IMZA65R048M1H [INFINEON]

CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R048M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。;
IMZA65R048M1H
型号： IMZA65R048M1H
厂家： Infineon    Infineon
描述：

CoolSiC™ MOSFET 技术通过最大限度地发挥碳化硅强大的物理特性，从而增强了设备性能、稳健性和易用性等独特优势。IMZA65R048M1H 650V CoolSiC™ MOSFET 基于先进的沟槽半导体技术，并经过优化，在毫不折衷的情况下，在应用中实现最低损耗，并在运行中实现最佳可靠性。

半导体
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IMZA65R048M1H  
MOSFET  
PG-TOꢀ247-4-3  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
Theꢀ650ꢀVꢀCoolSiC™ꢀisꢀbuiltꢀoverꢀtheꢀsolidꢀsiliconꢀcarbideꢀtechnology  
developedꢀinꢀInfineonꢀinꢀmoreꢀthanꢀ20ꢀyears.ꢀLeveragingꢀtheꢀwideꢀbandgap  
SiCꢀmaterialꢀcharacteristics,ꢀtheꢀ650VꢀCoolSiC™ꢀMOSFETꢀoffersꢀaꢀunique  
combinationꢀofꢀperformance,ꢀreliabilityꢀandꢀeaseꢀofꢀuse.ꢀSuitableꢀforꢀhigh  
temperatureꢀandꢀharshꢀoperations,ꢀitꢀenablesꢀtheꢀsimplifiedꢀandꢀcost  
effectiveꢀdeploymentꢀofꢀtheꢀhighestꢀsystemꢀefficiency.  
Tab  
1
2
3
4
Features  
•ꢀOptimizedꢀswitchingꢀbehaviorꢀatꢀhigherꢀcurrents  
•ꢀCommutationꢀrobustꢀfastꢀbodyꢀdiodeꢀwithꢀlowꢀQrr  
•ꢀSuperiorꢀgateꢀoxideꢀreliability  
•ꢀBestꢀthermalꢀconductivityꢀandꢀbehavior  
•ꢀLowerꢀRDS(on)ꢀandꢀpulseꢀcurrentꢀdependencyꢀonꢀtemperature  
•ꢀIncreasedꢀavalancheꢀcapability  
Drain  
Pin 1, Tab  
*1  
•ꢀCompatibleꢀwithꢀstandardꢀdriversꢀ(recommendedꢀdrivingꢀvoltage:ꢀ18V)  
•ꢀKelvinꢀsourceꢀprovidesꢀupꢀtoꢀ4ꢀtimesꢀlowerꢀswitchingꢀlosses  
Gate  
Pin 4  
Driver  
Source  
Pin 3  
Power  
Source  
Pin 2  
Benefits  
*1: Internal body diode  
•ꢀUniqueꢀcombinationꢀofꢀhighꢀperformance,ꢀhighꢀreliabilityꢀandꢀeaseꢀofꢀuse  
•ꢀEaseꢀofꢀuseꢀandꢀintegration  
•ꢀSuitableꢀforꢀtopologiesꢀwithꢀcontinuousꢀhardꢀcommutation  
•ꢀHigherꢀrobustnessꢀandꢀsystemꢀreliability  
•ꢀEfficiencyꢀimprovement  
•ꢀReducedꢀsystemꢀsizeꢀleadingꢀtoꢀhigherꢀpowerꢀdensity  
Potentialꢀapplications  
•ꢀSMPS  
•ꢀUPSꢀ(uninterruptableꢀpowerꢀsupplies)  
•ꢀSolarꢀPVꢀinverters  
•ꢀEVꢀchargingꢀinfrastructure  
•ꢀEnergyꢀstorageꢀandꢀbatteryꢀformation  
•ꢀClassꢀDꢀamplifiers  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDSꢀ@ꢀTJꢀ=ꢀ25ꢀ°C  
RDS(on),typ  
Value  
650  
48  
Unit  
V
mΩ  
nC  
A
QG,typ  
33  
ID,pulse  
100  
78  
Qossꢀ@ꢀ400ꢀV  
Eossꢀ@ꢀ400ꢀV  
nC  
µJ  
11.7  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IMZA65R048M1H  
PG-TO 247-4-3  
65R048M1  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2019-12-16  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMZA65R048M1H  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2019-12-16  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMZA65R048M1H  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTJꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
-
-
-
-
39  
24  
TCꢀ=ꢀ25ꢀ°C  
A
Continuous drain current1)  
Pulsed drain current2)  
ID  
TCꢀ=ꢀ100ꢀ°C  
ID,pulse  
EAS  
-
-
-
-
100  
171  
A
TCꢀ=ꢀ25ꢀ°C  
IDꢀ=ꢀ6.4ꢀA,ꢀVDDꢀ=ꢀ50ꢀV,ꢀLꢀ=ꢀ8.3ꢀmH;  
see table 10  
Avalanche energy, single pulse  
mJ  
Avalanche energy, repetitive  
Avalanche current, single pulse  
MOSFETꢀdv/dtꢀruggedness  
EAR  
IAS  
-
-
-
-
-
-
0.85  
6.4  
mJ  
A
IDꢀ=ꢀ6.4ꢀA,ꢀVDDꢀ=ꢀ50ꢀV;ꢀseeꢀtableꢀ10  
-
dv/dt  
200  
V/ns VDSꢀ=ꢀ0...400ꢀV  
Gate source voltage (recommended  
driving voltage)  
VGS  
0
-
18  
V
ACꢀ(fꢀ>ꢀ1ꢀHz)  
Gate source voltage (dynamic)  
Power dissipation  
VGS  
Ptot  
Tstg  
TJ  
-5  
-
-
-
-
-
-
-
-
23  
V
tpulse,negativeꢀ<=ꢀ15ꢀns  
-
125  
150  
150  
60  
W
°C  
°C  
TCꢀ=ꢀ25ꢀ°C  
Storage temperature  
-55  
-
-
Operating junction temperature  
-55  
Mounting torque  
-
-
-
-
-
Ncm M3 and M3.5 screws  
Continuous diode forward current1)  
Diode pulse current2)  
IS  
39  
A
A
V
TCꢀ=ꢀ25ꢀ°C  
IS,pulse  
VISO  
100  
n.a.  
TCꢀ=ꢀ25ꢀ°C  
Insulation withstand voltage  
Vrms,ꢀTCꢀ=ꢀ25ꢀ°C,ꢀtꢀ=ꢀ1ꢀmin  
1)ꢀLimitedꢀbyꢀTJ,max  
2)ꢀPulseꢀwidthꢀtpꢀlimitedꢀbyꢀTJ,max  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2019-12-16  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMZA65R048M1H  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
1.0  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
62  
°C/W leaded  
Thermal resistance, junction - ambient  
for SMD version  
RthJA  
-
-
-
-
-
°C/W n.a.  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
260  
°C  
1.6mm (0.063 in.) from case for 10s  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2019-12-16  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMZA65R048M1H  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTJꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
650  
3.5  
Typ.  
-
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage1)  
V(BR)DSS  
V(GS)th  
V
V
VGSꢀ=ꢀ0ꢀV,ꢀIDꢀ=ꢀ0.6ꢀmA  
VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ6ꢀmA  
4.5  
5.7  
-
-
1
2
150  
-
VDSꢀ=ꢀ650ꢀV,ꢀVGSꢀ=ꢀ0ꢀV,ꢀTJꢀ=ꢀ25ꢀ°C  
VDSꢀ=ꢀ650ꢀV,ꢀVGSꢀ=ꢀ0ꢀV,ꢀTJꢀ=ꢀ150ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGSꢀ=ꢀ20ꢀV,ꢀVDSꢀ=ꢀ0ꢀV  
-
-
0.048 0.064  
0.063  
VGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ20.1ꢀA,ꢀTJꢀ=ꢀ25ꢀ°C  
VGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ20.1ꢀA,ꢀTJꢀ=ꢀ150ꢀ°C  
RDS(on)  
RG  
-
-
6.0  
-
Ω
fꢀ=ꢀ1ꢀMHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
1118  
13  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
Input capacitance  
Reverse capacitance  
Output capacitance2)  
Output charge2)  
Ciss  
Crss  
Coss  
Qoss  
-
-
-
-
pF  
pF  
pF  
nC  
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz  
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz  
VGSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ400ꢀV,ꢀfꢀ=ꢀ250ꢀkHz  
calculationꢀbasedꢀonꢀCoss  
-
129  
168  
101  
78  
Effective output capacitance, energy  
related3)  
VGSꢀ=ꢀ0ꢀV,  
VDSꢀ=ꢀ0...400ꢀV  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
146  
194  
14.8  
12.6  
17  
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
Effective output capacitance, time  
related4)  
IDꢀ=ꢀconstant,ꢀVGSꢀ=ꢀ0ꢀV,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
VDSꢀ=ꢀ0...400ꢀV  
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ20.1ꢀA,  
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ20.1ꢀA,  
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9  
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ20.1ꢀA,  
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
VDDꢀ=ꢀ400ꢀV,ꢀVGSꢀ=ꢀ18ꢀV,ꢀIDꢀ=ꢀ20.1ꢀA,  
RGꢀ=ꢀ1.8ꢀΩ;ꢀseeꢀtableꢀ9  
13  
1)ꢀTestedꢀafterꢀ1ꢀmsꢀpulseꢀatꢀVGSꢀ=ꢀ+20ꢀV  
2)ꢀMaximumꢀspecificationꢀisꢀdefinedꢀbyꢀcalculatedꢀsixꢀsigmaꢀupperꢀconfidenceꢀbound  
3)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400ꢀV  
4)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400ꢀV  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2019-12-16  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMZA65R048M1H  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ20.1ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
Qgd  
Qg  
-
9
-
nC  
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ20.1ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV  
-
-
8
-
-
nC  
VDDꢀ=ꢀ400ꢀV,ꢀIDꢀ=ꢀ20.1ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
VGSꢀ=ꢀ0ꢀtoꢀ18ꢀV  
33  
nC  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
4.0  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
-
V
VGSꢀ=ꢀ0ꢀV,ꢀIFꢀ=ꢀ20.1ꢀA,ꢀTJꢀ=ꢀ25ꢀ°C  
VRꢀ=ꢀ400ꢀV,ꢀIFꢀ=ꢀ20.1ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
diF/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ8  
-
-
-
68  
-
-
-
ns  
VRꢀ=ꢀ400ꢀV,ꢀIFꢀ=ꢀ20.1ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
diF/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ8  
Reverse recovery charge  
Qrr  
Irrm  
125  
8.4  
nC  
A
VRꢀ=ꢀ400ꢀV,ꢀIFꢀ=ꢀ20.1ꢀA,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
diF/dtꢀ=ꢀ1000ꢀA/µs;ꢀseeꢀtableꢀ8  
Peak reverse recovery current  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2019-12-16  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMZA65R048M1H  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
150  
103  
102  
101  
100  
10-1  
10-2  
10-3  
1 µs  
125  
100  
75  
50  
25  
0
10 µs  
100 µs  
1 ms  
10 ms  
DC  
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
101  
102  
101  
1 µs  
100  
10 µs  
0.5  
100  
100 µs  
1 ms  
0.2  
0.1  
10-1  
10-2  
10-3  
10-1  
0.05  
10 ms  
DC  
0.02  
0.01  
single pulse  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2019-12-16  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMZA65R048M1H  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
150  
150  
125  
100  
75  
18 V  
125  
100  
75  
50  
25  
0
18 V  
15 V  
12 V  
15 V  
50  
12 V  
10 V  
8 V  
25  
10 V  
8 V  
0
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
0.200  
2.0  
10 V  
15 V  
12 V  
0.160  
0.120  
0.080  
0.040  
1.5  
1.0  
0.5  
18 V  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
TJꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=20.1ꢀA;ꢀVGS=18ꢀV  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2019-12-16  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMZA65R048M1H  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
200  
20  
18  
16  
14  
12  
10  
8
150  
100  
400 V  
6
50  
150 °C  
4
25 °C  
2
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
5
10  
15  
20  
25  
30  
35  
40  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=20.1ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
103  
103  
102  
102  
25 °C  
101  
101  
150 °C  
150 °C  
25 °C  
100  
100  
10-1  
10-1  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
VSDꢀ[V]  
VSDꢀ[V]  
IF=f(VSD);ꢀparameter:ꢀTj  
IF=f(VSD);ꢀVGS=18ꢀV;ꢀparameter:ꢀTj  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2019-12-16  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMZA65R048M1H  
Diagramꢀ13:ꢀAvalancheꢀenergy  
Diagramꢀ14:ꢀDrain-sourceꢀbreakdownꢀvoltage  
200  
690  
680  
670  
660  
650  
640  
630  
620  
150  
100  
50  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJꢀ[°C]  
TJꢀ[°C]  
EAS=f(Tj);ꢀID=6.4ꢀA;ꢀVDD=50ꢀV  
VBR(DSS)=f(Tj);ꢀID=0.6ꢀmA  
Diagramꢀ15:ꢀTyp.ꢀcapacitances  
Diagramꢀ16:ꢀTyp.ꢀCossꢀstoredꢀenergy  
104  
20  
15  
10  
5
Ciss  
103  
102  
101  
Coss  
Crss  
0
0
50 100 150 200 250 300 350 400 450 500  
0
50 100 150 200 250 300 350 400 450 500  
VDSꢀ[V]  
VDSꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Eoss=f(VDS)  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2019-12-16  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMZA65R048M1H  
Diagramꢀ17:ꢀTyp.ꢀQossꢀoutputꢀcharge  
100  
80  
60  
40  
20  
0
0
50 100 150 200 250 300 350 400 450 500  
VDSꢀ[V]  
Qoss=f(VDS  
)
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2019-12-16  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMZA65R048M1H  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
Rg1  
VDS  
Rg 2  
IF  
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimesꢀ(ss)  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2019-12-16  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMZA65R048M1H  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
MILLIMETERS  
MIN. MAX.  
DIMENSIONS  
A
A1  
A2  
A3  
b
4.90  
2.31  
1.90  
0.05  
1.10  
0.65  
-
5.10  
2.51  
2.10  
0.25  
1.30  
0.79  
0.20  
1.44  
0.66  
21.10  
16.85  
1.35  
25.27  
5.10  
15.90  
13.50  
2.60  
b1  
b2  
b3  
c
1.34  
0.58  
20.90  
16.25  
1.05  
24.97  
4.90  
15.70  
13.10  
2.40  
D
D1  
D2  
D3  
D4  
E
DOCUMENT NO.  
Z8B00184785  
REVISION  
03  
E1  
E2  
e1  
e2  
e3  
L
SCALE 2:1  
0
5
10mm  
5.08  
2.79  
2.54  
19.80  
-
20.10  
4.30  
3.70  
7.40  
2.60  
6.00  
EUROPEAN PROJECTION  
L1  
øP  
øP1  
øP2  
Q
3.50  
7.00  
2.40  
5.60  
S
6.15  
ISSUE DATE  
21.08.2017  
T
9.80  
6.00  
10.20  
6.40  
U
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247-4-3,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
13  
Rev.ꢀ2.0,ꢀꢀ2019-12-16  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMZA65R048M1H  
7ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolSiCꢀM1ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolSiCꢀM1ꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolSiCꢀM1ꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
14  
Rev.ꢀ2.0,ꢀꢀ2019-12-16  
650ꢀVꢀCoolSiCªꢀM1ꢀSiCꢀTrenchꢀPowerꢀDevice  
IMZA65R048M1H  
RevisionꢀHistory  
IMZA65R048M1H  
Revision:ꢀ2019-12-16,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2019-12-16  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2019ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
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technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
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Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
15  
Rev.ꢀ2.0,ꢀꢀ2019-12-16  

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