IPA041N04N G [INFINEON]
英飞凌的 40V 和 60V 产品系列不仅具有行业内极低的 R DS(on)，同时还具有快速开关应用的完美开关行为。通过先进的薄晶圆技术，与其他器件相比，实现了 R DS(on) 减低 15%，品质因数 (R DS(on) x Q g) 降低 31%。;
| 型号： | IPA041N04N G |
| 厂家： | 
Infineon |
| 描述： | 英飞凌的 40V 和 60V 产品系列不仅具有行业内极低的 R DS(on)，同时还具有快速开关应用的完美开关行为。通过先进的薄晶圆技术，与其他器件相比，实现了 R DS(on) 减低 15%，品质因数 (R DS(on) x Q g) 降低 31%。 开关 |
| 文件： | 总12页 (文件大小：1363K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
OptiMOSTM
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
IPA041N04NꢀG
DataꢀSheet
Rev.ꢀ2.0
Final
PowerꢀManagementꢀ&ꢀMultimarket
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
IPA041N04NꢀG
TO-220-FP
1ꢀꢀꢀꢀꢀDescription
Features
•ꢀOptimizedꢀtechnologyꢀforꢀDC/DCꢀconverters
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀ1)ꢀꢀforꢀtargetꢀapplications
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀ100%ꢀAvalancheꢀtested
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Drain
Pin 2
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Gate
Pin 1
Parameter
Value
Unit
VDS
40
V
Source
Pin 3
RDS(on),max
ID
4.1
mΩ
A
70
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPA041N04N G
PG-TO220-FP
041N04N
-
1) J-STD20 and JESD22
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2014-03-12
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
IPA041N04NꢀG
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2014-03-12
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
IPA041N04NꢀG
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
at 25 °C
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-
-
-
-
70
49
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
Continuous drain current
ID
A
Pulsed drain current 1)
ID,pulse
IAS
-
-
-
-
-
-
280
70
70
20
35
A
TC=25ꢀ°C
TC=25ꢀ°C
ID=70ꢀA,ꢀRGS=25ꢀΩ
-
Avalanche current, single pulse 2)
Avalanche energy, single pulse
Gate source voltage
-
A
EAS
VGS
Ptot
-
mJ
V
-20
-
Power dissipation
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
4.3
K/W
K/W
-
-
SMD version, device on PCB,
minimal footprint
-
-
-
-
62
40
SMD version, device on PCB,
6 cm² cooling area 3)
RthJA
K/W
-
1) See figure 3 for more detailed information
2) See figure 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2014-03-12
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
IPA041N04NꢀG
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
40
2
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=45ꢀµA
4
-
-
0.1
10
1
100
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
IDSS
µA
nA
Gate-source leakage current
Drain-source on-state resistance 1)
Gate resistance
IGSS
RDS(on)
RG
-
10
100
4.1
2.4
-
VGS=20ꢀV,ꢀVDS=0ꢀV
-
3.5
1.6
96
mΩ VGS=10ꢀV,ꢀID=70ꢀA
-
Ω
-
Transconductance
gfs
48
S
|VDS|>2|ID|RDS(on)max,ꢀID=70ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
3400 4500 pF
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
Output capacitance
980
36
1300 pF
Reverse transfer capacitance
72
-
pF
ns
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
16
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
3.8
23
-
-
-
ns
ns
ns
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
4.8
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristicsꢀ2)ꢀ
Values
Typ.
18
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=20ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
10.3
5.3
-
-
Qsw
12.5
42
-
Gate charge total
Qg
56
-
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Vplateau
Qg(sync)
Qoss
5.1
40
-
nC
nC
41
-
VDD=20ꢀV,ꢀVGS=0ꢀV
1) Measured from drain tab to source pin
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2014-03-12
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
IPA041N04NꢀG
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
29
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
Qrr
-
280
1.2
-
A
TC=25ꢀ°C
Diode forward voltage
0.87
19
V
VGS=0ꢀV,ꢀIF=29ꢀA,ꢀTj=25ꢀ°C
VR=20ꢀV,ꢀIF=29ꢀA,ꢀdiF/dt=400ꢀA/µs
Reverse recovery charge
nC
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2014-03-12
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
IPA041N04NꢀG
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
40
80
60
40
20
0
36
32
28
24
20
16
12
8
4
0
0
50
100
150
200
0
50
100
150
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
0.5
100 µs
102
10 µs
100
0.2
1 ms
0.1
101
0.05
DC
0.02
10 ms
10-1
100
0.01
single pulse
10-2
10-1
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
101
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2014-03-12
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
IPA041N04NꢀG
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
200
8
5.5 V
10 V
7
6 V
6.5 V
7 V
6.5 V
150
6
5
4
3
2
1
0
7 V
6 V
100
50
0
10 V
5.5 V
5 V
0
1
2
3
0
50
100
150
200
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
200
120
100
80
60
40
20
0
150
100
50
175 °C
25 °C
0
0
2
4
6
8
0
20
40
60
80
100
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2014-03-12
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
IPA041N04NꢀG
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
8
4
7
6
3
2
1
0
5
max
4
typ
3
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=70ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=45ꢀµA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
175 °C
25 °C, max
175 °C, max
Ciss
Coss
103
102
101
102
101
100
Crss
0
10
20
30
40
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2014-03-12
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
IPA041N04NꢀG
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
12
20 V
8 V
10
8
25 °C
100 °C
32 V
150 °C
101
6
4
2
100
10-1
0
100
101
102
103
0
10
20
30
40
50
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=30ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
44
42
40
38
36
34
32
30
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2014-03-12
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
IPA041N04NꢀG
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO220-FP,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2014-03-12
OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV
IPA041N04NꢀG
RevisionꢀHistory
IPA041N04N G
Revision:ꢀ2014-03-12,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2014-03-12
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2014-03-12
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INFINEON
IPA057N06N3GXKSA1
Power Field-Effect Transistor, 60A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
IPA057N08N3GXKSA1
Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
INFINEON
IPA060N06NXKSA1
Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
INFINEON
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