IPA105N15N3GXKSA1 [INFINEON]

Power Field-Effect Transistor, 37A I(D), 150V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220-FP, 3 PIN;


型号：	IPA105N15N3GXKSA1
厂家：	Infineon
描述：	Power Field-Effect Transistor, 37A I(D), 150V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220-FP, 3 PIN 局域网脉冲晶体管
文件：	总9页 (文件大小：551K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPA105N15N3 G

"%&$!"#^TM3 Power-Transistor

Product Summary

Features

V _9H

)-(

)(&-

P ' ꢀ3 81>>5<ꢁ >? A=1< <5E5<

R _{ꢊ ,ꢃ? >ꢄꢁ=1G}

I ₉

P ꢂ G3 5<<5>C 71C5 3 81A75 G R _9H"[Z#@A? 4D3 C ꢃ ( & ꢄ

P .5AH <? F ? >ꢀA5B9BC1>3 5 R _9H"[Z#

P ꢅ ꢆ ꢇ Sꢈ ? @5A1C9>7 C5=@5A1CDA5

P )2 ꢀ6A55 <514 @<1C9>7ꢉ + ? " , 3 ? =@<91>C

P * D1<96954 13 3 ? A49>7 C? $ ꢂ ꢊ ꢂ ꢈ ^)#6? A C1A75C 1@@<93 1C9? >

P " 1<? 75>ꢀ6A55 13 3 ? A49>7 C? #ꢂ ꢈ ꢋ ꢅ ꢌ ꢍ ꢎ ꢀꢌ ꢀꢌ ꢅ

Type

#)ꢑ ꢅ ꢐ ꢇ ' ꢅ ꢇ ' ꢒ !

Package

Marking

E=%ID**(%<E

)(-C)-C

Maximum ratings, 1C T _Vꢏ ꢌ ꢇ Sꢈ ꢁ D><5BB ? C85AF9B5 B@53 96954

Value

Parameter

Symbol Conditions

Unit

T ₈ꢏ ꢌ ꢇ Sꢈ ^*#

I ₉

ꢈ ? >C9>D? DB 4A19> 3 DAA5>C

T ₈ꢏ ꢅ ꢐ ꢐ Sꢈ

)D<B54 4A19> 3 DAA5>C^*#

I _9$\`X^Q

E _6H

T ₈ꢏ ꢌ ꢇ Sꢈ

I ₉ꢏ ꢒ ꢆ ꢑ ꢁ R _=Hꢏ ꢌ ꢇ "

),0

ꢑ E1<1>3 85 5>5A7Hꢁ B9>7<5 @D<B5

!1C5 B? DA3 5 E? <C175

/,(

V _=H

p*(

P _{_[_}

T ₈ꢏ ꢌ ꢇ Sꢈ

)? F5A 49BB9@1C9? >

,(&-

Sꢈ

T _Vꢁ T _{^_S}

( @5A1C9>7 1>4 BC? A175 C5=@5A1CDA5

#ꢂ ꢈ 3 <9=1C93 3 1C57? AHꢉ ꢊ #' #ꢂ ꢈ ꢋ ꢔ ꢀꢅ

ꢀꢇ ꢇ ꢓꢓꢓ ꢅ ꢆ ꢇ

ꢇ ꢇ ꢕꢅ ꢆ ꢇ ꢕꢇ ꢋ

^)#$ ꢀ,-ꢊ ꢌ ꢐ 1>4 $ ꢂ ,ꢊ ꢌ ꢌ

^*#,55 697DA5 ꢒ

+ 5Eꢓ ꢌ ꢓꢅ

@175 ꢅ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢇ

IPA105N15N3 G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

R _{_T@8}

-85A=1< A5B9BC1>3 5ꢁ :D>3 C9? > ꢀ 3 1B5

+&/

A'K

Electrical characteristics, 1C T _Vꢏ ꢌ ꢇ Sꢈ ꢁ D><5BB ? C85AF9B5 B@53 96954

Static characteristics

V _"7G#9HH

V _{=H"_T#}

_=Hꢏ ꢐ .ꢁ I ₉ꢏ ꢅ =ꢑ

ꢊ A19>ꢀB? DA3 5 2 A51;4? F> E? <C175

!1C5 C8A5B8? <4 E? <C175

)-(

_9H4V _=Hꢁ I ₉ꢏ ꢅ ꢋ ꢐ U ꢑ

_9Hꢏ ꢅ ꢌ ꢐ .ꢁ V _=Hꢏ ꢐ .ꢁ

I _9HH

05A? 71C5 E? <C175 4A19> 3 DAA5>C

(&)

)(

)

T _Vꢏ ꢌ ꢇ Sꢈ

_9Hꢏ ꢅ ꢌ ꢐ .ꢁ V _=Hꢏ ꢐ .ꢁ

)((

T _Vꢏ ꢅ ꢌ ꢇ Sꢈ

I _=HH

_=Hꢏ ꢌ ꢐ .ꢁ V _9Hꢏ ꢐ .

_=Hꢏ ꢅ ꢐ .ꢁ I ₉ꢏ ꢒ ꢆ ꢑ

!1C5ꢀB? DA3 5 <51;175 3 DAA5>C

)

)(( Z6

R _9H"[Z#

ꢊ A19>ꢀB? DA3 5 ? >ꢀBC1C5 A5B9BC1>3 5

1&)

)(&-

_=Hꢏ ꢔ .ꢁ I ₉ꢏ ꢅ ꢔ ꢑ

1&-

*&,

))&)

R ₌

g _R^

!1C5 A5B9BC1>3 5

fV _9Hf5*fI ₉fR _9H"[Z#YMcꢁ

I ₉ꢏ ꢒ ꢆ ꢑ

I]MZ^O[ZP`O_MZOQ

^+#ꢊ 5E93 5 ? > ꢍ ꢐ == G ꢍ ꢐ == G ꢅ ꢓꢇ == 5@? GH )ꢈ ꢖ + ꢍ F9C8 ꢋ 3 = ꢃ? >5 <1H5Aꢁ ꢆ ꢐ U = C893 ;ꢄ 3 ? @@5A 1A51 6? A 4A19>

3 ? >>53 C9? >ꢓ )ꢈ ꢖ 9B E5AC93 1< 9> BC9<< 19Aꢓ

+ 5Eꢓ ꢌ ꢓꢅ

@175 ꢌ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢇ

IPA105N15N3 G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

#>@DC 3 1@13 9C1>3 5

( DC@DC 3 1@13 9C1>3 5

+ 5E5AB5 CA1>B65A 3 1@13 9C1>3 5

-DA>ꢀ? > 45<1H C9=5

+ 9B5 C9=5

C _U^^

+*+(

+/0

,+(( \<

_=Hꢏ ꢐ .ꢁ V _9Hꢏ ꢆ ꢇ .ꢁ

C _[^^

C _]^^

t _P"[Z#

t _]

-(+

f ꢏ ꢅ & " I

₉₉ꢏ ꢆ ꢇ .ꢁ V _=Hꢏ ꢅ ꢐ .ꢁ

I ₉ꢏ ꢒ ꢆ ꢑ ꢁ R ₌ꢏ ꢅ ꢓꢋ "

t _P"[RR#

t _R

-DA>ꢀ? 66 45<1H C9=5

1<< C9=5

!1C5 ꢈ 81AS5 ꢈ 81A13 C5A9BC93 B^,#

!1C5 C? B? DA3 5 3 81A75

!1C5 C? 4A19> 3 81A75

,F9C3 89>7 3 81A75

Q _S^

Q _SP

₉₉ꢏ ꢆ ꢇ .ꢁ I ₉ꢏ ꢒ ꢆ ꢑ ꢁ

_=Hꢏ ꢐ C? ꢅ ꢐ .

Q _^b

Q _S

-&)

)(.

!1C5 3 81A75 C? C1<

V _{\XM_QM`}

Q _[^^

!1C5 @<1C51D E? <C175

( DC@DC 3 81A75

₉₉ꢏ ꢆ ꢇ .ꢁ V _=Hꢏ ꢐ .

),) Z8

Reverse Diode

I _H

ꢊ 9? 45 3 ? >C9>? DB 6? AF1A4 3 DAA5>C

ꢊ 9? 45 @D<B5 3 DAA5>C

T ₈ꢏ ꢌ ꢇ Sꢈ

I _H$\`X^Q

),0

_=Hꢏ ꢐ .ꢁ I _<ꢏ ꢒ ꢆ ꢑ ꢁ

V _H9

ꢊ 9? 45 6? AF1A4 E? <C175

(&1

)&*

T _Vꢏ ꢌ ꢇ Sꢈ

t _]]

+ 5E5AB5 A53 ? E5AH C9=5

))-

+0(

V _Gꢏ ꢇ ꢐ .ꢁ I _<4+/ ꢑ ꢁ

Pi _<'Pt ꢏ ꢅ ꢐ ꢐ ꢑ ꢕU B

Q _]]

+ 5E5AB5 A53 ? E5AH 3 81A75

^,#,55 697DA5 ꢅ ꢋ 6? A 71C5 3 81A75 @1A1=5C5A 4569>9C9? >

+ 5Eꢓ ꢌ ꢓꢅ

@175 ꢒ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢇ

IPA105N15N3 G

1 Power dissipation

2 Drain current

_{_[_}4R"T ₈#

I ₉4R"T ₈ꢄꢉ V _=H"ꢅ ꢐ .

100

150

200

100

150

200

T _C[°C]

3 Safe operating area

I ₉4R"V _9Hꢄꢉ T ₈ꢏ ꢌ ꢇ Sꢈ ꢉ D 4(

@1A1=5C5Aꢗ t _\

4 Max. transient thermal impedance

_{_T@8}4R"t _\#

@1A1=5C5Aꢗ D 4t _\'T

10³

10¹

<9=9C54 2 H ? >ꢀBC1C5

]Q^U^_MZOQ

ꢅ U B

(&-

10²

10¹

10⁰

10^-1

ꢅ ꢐ U B

ꢅ ꢐ ꢐ U B

10⁰

(&*

(&)

ꢅ =B

(&(-

ꢅ ꢐ =B

(&(*

10^-1

(&()

B9>7<5 @D<B5

10^-2

10^-1

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t _p[s]

V _DS[V]

+ 5Eꢓ ꢌ ꢓꢅ

@175 ꢍ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢇ

IPA105N15N3 G

5 Typ. output characteristics

I ₉4R"V _9Hꢄꢉ T _Vꢏ ꢌ ꢇ Sꢈ

6 Typ. drain-source on resistance

_9H"[Z#4R"I ₉ꢄꢉ T _Vꢏ ꢌ ꢇ Sꢈ

@1A1=5C5Aꢗ V _=H

120

ꢇ .

ꢅ ꢐ .

ꢋ .

100

ꢆ ꢓꢇ .

ꢋ .

ꢔ .

ꢅ ꢐ .

ꢇ ꢓꢇ .

ꢇ .

ꢍ ꢓꢇ .

V _DS[V]

I _D[A]

7 Typ. transfer characteristics

I ₉4R"V _=Hꢄꢉ JV _9Hf5*fI ₉fR _9H"[Z#YMc

@1A1=5C5Aꢗ T _V

8 Typ. forward transconductance

g _R^4R"I ₉ꢄꢉ T _Vꢏ ꢌ ꢇ Sꢈ

100

ꢅ ꢆ ꢇ Sꢈ

ꢌ ꢇ Sꢈ

V _GS[V]

I _D[A]

+ 5Eꢓ ꢌ ꢓꢅ

@175 ꢇ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢇ

IPA105N15N3 G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

_{=H"_T#}4R"T _Vꢄꢉ V _=H4V _9H

_9H"[Z#4R"T _Vꢄꢉ I ₉ꢏ ꢒ ꢆ ꢑ ꢉ V _=Hꢏ ꢅ ꢐ .

@1A1=5C5Aꢗ I ₉

3.5

ꢅ ꢋ ꢐ ꢐ U ꢑ

ꢅ ꢋ ꢐ U ꢑ

2.5

ꢎ ꢔ ꢘ

1.5

_d\

0.5

-60

-20

100

140

180

-60

-20

T _j[°C]

100

140

180

T _j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _<4R"V _H9

C 4R"V _9Hꢄꢉ V _=Hꢏ ꢐ .ꢉ f ꢏ ꢅ & " I

@1A1=5C5Aꢗ T _V

10⁴

10³

8U^^

10³

10²

10¹

8[^^

10²

ꢌ ꢇ Sꢈ

ꢅ ꢆ ꢇ Sꢈ ꢁ ꢎ ꢔ ꢘ

ꢅ ꢆ ꢇ Sꢈ

ꢌ ꢇ Sꢈ ꢁ ꢎ ꢔ ꢘ

10¹

8]^^

10⁰

100

0.5

1.5

V _DS[V]

V _SD[V]

+ 5Eꢓ ꢌ ꢓꢅ

@175 ꢋ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢇ

IPA105N15N3 G

13 Avalanche characteristics

_6H4R"t _6Jꢄꢉ R _=Hꢏ ꢌ ꢇ "

14 Typ. gate charge

_=H4R"Q _{SM_Q}ꢄꢉ I ₉ꢏ ꢒ ꢆ ꢑ @D<B54

@1A1=5C5Aꢗ T _{V"^_M]_#}

@1A1=5C5Aꢗ V ₉₉

100

ꢅ ꢌ ꢐ .

ꢆ ꢇ .

ꢌ ꢇ Sꢈ

ꢒ ꢐ .

ꢅ ꢐ ꢐ Sꢈ

ꢅ ꢇ ꢐ Sꢈ

100

1000

t _AV[µs]

Q _gate[nC]

15 Drain-source breakdown voltage

16 Gate charge waveforms

_7G"9HH#4R"T _Vꢄꢉ I ₉ꢏ ꢅ =ꢑ

170

165

160

155

150

145

140

135

130

V _=H

Q _g

V _{S ^"_T#}

Q _{S"_T#}

Q _^b

Q _SP

Q _gate

Q _S^

-60

-20

100

140

180

T _j[°C]

+ 5Eꢓ ꢌ ꢓꢅ

@175 ꢆ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢇ

IPA105N15N3 G

PG-TO220-FP

+ 5Eꢓ ꢌ ꢓꢅ

@175 ꢔ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢇ

IPA105N15N3 G

Published by

Infineon Technologies AG

81726 Munich, Germany

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conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

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For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

+ 5Eꢓ ꢌ ꢓꢅ

@175 ꢎ

ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢇ

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