IPA50R140CP [INFINEON]

CoolMOS Power Transistor; 的CoolMOS功率晶体管


型号：	IPA50R140CP
厂家：	Infineon
描述：	CoolMOS Power Transistor 的CoolMOS功率晶体管晶体晶体管
文件：	总10页 (文件大小：607K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPA50R140CP

CoolMOS^TMPower Transistor

Features

Product Summary

_!08M_{\_Sj}

R _{=L"a`#%_Sj}

Q _Y%fkb

..)

)'*-)

-1

W 4 EHB: M?: ; 8;IJ / _=L"a`#?D 1, ꢀ ꢀ ꢁ

W )EM;IJ <?=KH; E< C ;H?J / _, +N . _Y

W 2 BJH7 BEM =7J; 9>7H=;

W " NJH;C ; : Lꢂ: J H7J;:

W % ?=> F;7A 9KHH;DJ 97F78?B?JO

1, ꢃ ꢀ ꢀ ꢁ # -

W -8ꢃ<H;; B;7: FB7J?D=ꢄ / E% 0 9EC FB?7DJꢀ ꢁ ꢂ ꢃꢄ ꢅ ꢆ ꢇ ꢈꢉꢆ ꢆ ꢈꢄ ꢉ ꢊ ꢄ ꢃꢋ ꢌ ꢄ ꢊ ꢍ ꢄ ꢎ ꢇ ꢋ

W . K7B!<?;: ꢈꢄ ꢉ ꢏꢇ ꢋ ꢎ ꢐ ꢑꢉꢏꢂ ꢃ ꢅ ꢉꢂ ꢋ ꢆ ꢂ ꢍ ꢍ ꢃꢏꢌ ꢂ ꢑꢏꢄ ꢇ ꢐ 799EH: ?D= JE ' " !"

CoolMOS CP is designed for:

W % 7H: 7D: IE<JIM?J9>?D= 0* -0 <EH I;HL;H FEM;H IKFFB?;I

W * -# <EH ꢅ 15ꢆ + EJ;8EEA 7: 7FJ;Hꢆ -!- 7D: ) ! 13

W -4 * IJ7=;I <EH 0;HL;Hꢆ ꢅ : 7FJ;H

Type

Package

Marking

BI9.)K*-)<I

I@&MH++)?I

.K*-)I

Maximum ratings, 7J T _\ꢇ ꢀ ꢈ Z ꢆ KDB;II EJ>;HM?I; IF;9?<?;:

Value

Parameter

Symbol Conditions

Unit

EDJ?DKEKI : H7?D 9KHH;DJ^*#

I ₌

T _<ꢇ ꢀ ꢈ Z

T _<ꢇ ꢉ ꢁ ꢁ Z

-KBI;: : H7?D 9KHH;DJ^+#

I _=%bg^eW

E _9L

E _9K

I _9K

T _<ꢇ ꢀ ꢈ Z

I ₌ꢇ ꢊ ꢋꢌ ꢅ ꢆ V ₌₌ꢇ ꢈ ꢁ 3

ꢅ L7B7D9>; ;D;H=Oꢆ I?D=B; FKBI;

ꢅ L7B7D9>; ;D;H=Oꢆ H;F;J?J?L; t _9K

/*/

)'2,

2',

+#%,#

ꢅ L7B7D9>; 9KHH;DJꢆ H;F;J?J?L; t _9K

_=Lꢇ ꢁ ꢋꢋꢋꢍ ꢁ ꢁ 3

* , 0# " 1 : v (Vt HK==;: D;II

: v (Vt

O(`e

V _@L

w+)

w,)

$ 7J; IEKH9; LEBJ7=;

efSf[U

ꢅ ꢎ<ꢏ ꢉ % Pꢐ

P _faf

T _<ꢇ ꢀ ꢈ Z

ꢃꢈ ꢈ ꢋꢋꢋ ꢉ ꢈ ꢁ

ꢈ ꢁ

-EM;H : ?II?F7J?ED

T _\ꢆ T _efY

, F;H7J?D= 7D: IJEH7=; J;C F;H7JKH;

* EKDJ?D= JEHGK;

* ꢀ ꢋꢈ I9H;MI

F7=; ꢉ

+ 9C

/ ;Lꢋ ꢀ ꢋꢉ

ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ

IPA50R140CP

Maximum ratings, 7J T _\ꢇ ꢀ ꢈ Z ꢆ KDB;II EJ>;HM?I; IF;9?<?;:

Value

Parameter

Symbol Conditions

Unit

EDJ?DKEKI : ?E: ; <EHM7H: 9KHH;DJ^*#

!?E: ; FKBI; 9KHH;DJ^+#

/ ;L;HI; : ?E: ; : v (Vt ^-#

I _L

T _<ꢇ ꢀ ꢈ Z

I _L%bg^eW

Vv (Vt

O(`e

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Thermal characteristics

R _fZC<

1>;HC 7B H;I?IJ7D9;ꢆ @KD9J?ED ꢃ 97I;

,'/. D(P

1>;HC 7B H;I?IJ7D9;ꢆ @KD9J?ED ꢃ

R _fZC9

^WSVWV

S_T[W`f

0EB: ;H?D= J;C F;H7JKH;ꢆ

ꢉ ꢋꢑ C C ꢎꢁ ꢋꢁ ꢑ ꢌ ?Dꢋꢐ

<HEC 97I; <EH ꢉ ꢁ I

T _ea^V

+/) v<

M7L;IEB: ;H?D= EDBO 7BBEM;: 7J B;7: I

Electrical characteristics, 7J T _\ꢇ ꢀ ꢈ Z ꢆ KDB;II EJ>;HM?I; IF;9?<?;:

Static characteristics

V _";K#=LL

_@Lꢇ ꢁ 3 ꢆ I ₌ꢇ ꢀ ꢈ ꢁ \ ꢅ

_=L6V _@Lꢆ I ₌ꢇ ꢁ ꢋꢊ ꢌ C ꢅ

!H7?DꢃIEKH9; 8H;7A: EMD LEBJ7=;

$ 7J; J>H;I>EB: LEBJ7=;

.))

+'.

V _@L"fZ#

,'.

_=Lꢇ ꢈ ꢁ ꢁ 3 ꢆ V _@Lꢇ ꢁ 3 ꢆ

I _=LL

6;HE =7J; LEBJ7=; : H7?D 9KHH;DJ

T _\ꢇ ꢀ ꢈ Z

_=Lꢇ ꢈ ꢁ ꢁ 3 ꢆ V _@Lꢇ ꢁ 3 ꢆ

T _\ꢇ ꢉ ꢈ ꢁ Z

I _@LL

_@Lꢇ ꢀ ꢁ 3 ꢆ V _=Lꢇ ꢁ 3

_@Lꢇ ꢉ ꢁ 3 ꢆ I ₌ꢇ ꢉ ꢍ ꢅ ꢆ

$ 7J;ꢃIEKH9; B;7A7=; 9KHH;DJ

*)) `9

R _=L"a`#

!H7?DꢃIEKH9; EDꢃIJ7J; H;I?IJ7D9;

)'*,

)'*-

T _\ꢇ ꢀ ꢈ Z

_@Lꢇ ꢉ ꢁ 3 ꢆ I ₌ꢇ ꢉ ꢍ ꢅ ꢆ

)',+

T _\ꢇ ꢉ ꢈ ꢁ Z

R _@

$ 7J; H;I?IJ7D9;

f ꢇ ꢉ * % Pꢆ EF;D : H7?D

ꢃ

ꢀ ꢋꢀ

ꢃ

/ ;Lꢋ ꢀ ꢋꢉ

F7=; ꢀ

ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ

IPA50R140CP

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Dynamic characteristics

&DFKJ 97F79?J7D9;

C _[ee

+.-)

**)

_@Lꢇ ꢁ 3 ꢆ V _=Lꢇ ꢉ ꢁ ꢁ 3 ꢆ

f ꢇ ꢉ * % P

C _aee

, KJFKJ 97F79?J7D9;

" <<;9J?L; EKJFKJ 97F79?J7D9;ꢆ ;D;H=O

dW^SfWV^.#

C _a"Wd#

**)

+,)

V _@Lꢇ ꢁ 3 ꢆ V _=Lꢇ ꢁ 3

JE ꢍ ꢁ ꢁ 3

" <<;9J?L; EKJFKJ 97F79?J7D9;ꢆ J?C ;

dW^SfWV^/#

C _a"fd#

t _V"a`#

t _d

t _V"aXX#

t _X

1KHDꢃED : ;B7O J?C ;

/ ?I; J?C ;

1')

₌₌ꢇ ꢍ ꢁ ꢁ 3 ꢆ

_@Lꢇ ꢉ ꢁ 3 ꢆ I ₌ꢇ ꢉ ꢍ ꢅ ꢆ

1KHDꢃE<< : ;B7O J?C ;

# 7BB J?C ;

R _@ꢇ ꢉ ꢀ ꢋꢀ "

$ 7J; >7H=; >7H79J;H?IJ?9I

$ 7J; JE IEKH9; 9>7H=;

$ 7J; JE : H7?D 9>7H=;

$ 7J; 9>7H=; JEJ7B

Q _Ye

-1

.'+

Q _YV

₌₌ꢇ ꢍ ꢁ ꢁ 3 ꢆ I ₌ꢇ ꢉ ꢍ ꢅ ꢆ

_@Lꢇ ꢁ JE ꢉ ꢁ 3

Q _Y

V _b^SfWSg

$ 7J; FB7J;7K LEBJ7=;

Reverse Diode

_@Lꢇ ꢁ 3 ꢆ I _?ꢇ ꢉ ꢍ ꢅ ꢆ

V _L=

!?E: ; <EHM7H: LEBJ7=;

)'2

*'+

T _\ꢇ ꢀ ꢈ Z

t _dd

/ ;L;HI; H;9EL;HO J?C ;

/ ;L;HI; H;9EL;HO 9>7H=;

-;7A H;L;HI; H;9EL;HO 9KHH;DJ

^)#' ꢃ01!ꢀ ꢁ 7D: ' " 0!ꢀ ꢀ

-))

.'/

V _Kꢇ ꢍ ꢁ ꢁ 3 ꢆ I _?6I _Lꢆ

Vi _?(Vt ꢇ ꢉ ꢁ ꢁ ꢅ ꢂ\ I

Q _dd

I _{dd_}

^ꢉ ꢐ)?C ?J;: EDBO 8O 1

\%_Sj

^+#-KBI; M?: J> t _bB?C ?J;: 8O T _{\%_Sj}

^,#/ ;F;J?J?L; 7L7B7D9>; 97KI;I 7: : ?J?ED7B FEM;H BEII;I J>7J 97D 8; 97B9KB7J;: 7IP _9O6E _9K$f.

ꢍ ꢐ

&_L="B₌ꢆ : ?ꢂ: J"ꢀ ꢁ ꢁ ꢅ ꢂ\ Iꢆ 3 _=<^[`]ꢇ ꢍ ꢁ ꢁ 3 ꢆ 3 _bWS]5O_";K#=LLꢆ 1_\5M_{\_Sj}ꢆ ?: ;DJ?97B BEM 7D: >?=> I?: ; IM?J9>

^.#C _a"fd#?I 7 <?N;: 97F79?J7D9; J>7J =?L;I J>; I7C ; 9>7H=?D= J?C ; 7IC _aeeM>?B; V _=L?I H?I?D= <HEC ꢁ JE ꢒ ꢁ ꢓ V _=LL'

^/#C _a"Wd#?I 7 <?N;: 97F79?J7D9; J>7J =?L;I J>; I7C ; IJEH;: ;D;H=O 7IC _aeeM>?B; V _=L?I H?I?D= <HEC ꢁ JE ꢒ ꢁ ꢓ V _=LL'

^0#C _a"fd#?I 7 <?N;: 97F79?J7D9; J>7J =?L;I J>; I7C ; 9>7H=?D= J?C ; 7IC _aeeM>?B; V _=L?I H?I?D= <HEC ꢁ JE ꢒ ꢁ ꢓ V _=LL'

/ ;Lꢋ ꢀ ꢋꢉ

F7=; ꢌ

ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ

IPA50R140CP

1 Power dissipation

2 Safe operating area

I ₌6X"V _=Lꢐꢄ T _<ꢇ ꢀ ꢈ Z ꢄ D 6)

F7H7C ;J;Hꢔ t _b

_faf6X"T _<#

10²

ꢉ \ I

ꢉ ꢁ \ I

B?C ?J;: 8O EDꢃIJ7J;

dWe[efS`UW

ꢉ ꢁ ꢁ \ I

10¹

ꢉ C I

ꢉ ꢁ C I

10⁰

10^-1

10⁰

10¹

10²

10³

100

150

T _C[°C]

V _DS[V]

3 Max. transient thermal impedance

R_"fZC<#6X"f_bꢐꢄ

4 Typ. output characteristics

I ₌6X"V _=Lꢐꢄ T _\ꢇ ꢀ ꢈ Z

F7H7C ;J;Hꢔ D=t _b(T

F7H7C ;J;Hꢔ V _@L

10¹

ꢀ ꢁ 3

ꢉ ꢁ 3

ꢒ 3

)'.

ꢕ 3

10⁰

)'+

)'*

ꢑ 3

)').

10^-1

)')+

ꢈ ꢋꢈ 3

)')*

ꢈ 3

I?D=B; FKBI;

ꢍ ꢋꢈ 3

10^-2

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

V _DS[V]

t _p[s]

/ ;Lꢋ ꢀ ꢋꢉ

F7=; ꢍ

ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ

IPA50R140CP

5 Typ. output characteristics

I ₌6X"V _=Lꢐꢄ T _\ꢇ ꢉ ꢈ ꢁ Z

F7H7C ;J;Hꢔ V _@L

6 Typ. drain-source on-state resistance

_=L"a`#6X"I ₌ꢐꢄ T _\ꢇ ꢉ ꢈ ꢁ Z

F7H7C ;J;Hꢔ V _@L

0.8

ꢀ ꢁ 3

ꢕ 3

ꢉ ꢁ 3

0.7

0.6

0.5

0.4

0.3

0.2

ꢒ 3

ꢑ ꢋꢈ 3

ꢕ 3

ꢉ ꢁ 3

ꢑ 3

ꢈ ꢋꢈ 3

ꢈ 3

ꢍ ꢋꢈ 3

I _D[A]

V _DS[V]

7 Drain-source on-state resistance

8 Typ. transfer characteristics

I ₌6X"V _@Lꢐꢄ QV _=Lm7+mI ₌mR _{=L"a`#_Sj}

F7H7C ;J;Hꢔ T _\

_=L"a`#6X"T _\ꢐꢄ I ₌ꢇ ꢉ ꢍ ꢅ ꢄ V _@Lꢇ ꢉ ꢁ 3

0.35

0.3

ꢀ ꢈ Z

0.25

ꢊ ꢒ ꢓ

ꢉ ꢈ ꢁ Z

0.2

fkb

0.15

0.1

0.05

-60

-30

120 150 180

T _j[°C]

V _GS[V]

/ ;Lꢋ ꢀ ꢋꢉ

F7=; ꢈ

ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ

IPA50R140CP

9 Typ. gate charge

_@L6X"Q _YSfWꢐꢄ I ₌ꢇ ꢉ ꢍ ꢅ FKBI;:

10 Forward characteristics of reverse diode

I _?6X"V _L=

F7H7C ;J;Hꢔ V ₌₌

F7H7C ;J;Hꢔ T _\

10²

ꢀ ꢈ Z ꢆ ꢊ ꢒ ꢓ

ꢉ ꢁ ꢁ 3

ꢉ ꢈ ꢁ Z ꢆ ꢊ ꢒ ꢓ

10¹

ꢉ ꢈ ꢁ Z

ꢍ ꢁ ꢁ 3

ꢀ ꢈ Z

10⁰

10^-1

0.5

1.5

Q _gate[nC]

V _SD[V]

11 Avalanche energy

_9L6X"T _\ꢐꢄ I ₌ꢇ ꢊ ꢋꢌ ꢅ ꢄ V ₌₌ꢇ ꢈ ꢁ 3

12 Drain-source breakdown voltage

_;K"=LL#6X"T _\ꢐꢄ I ₌ꢇ ꢁ ꢋꢀ ꢈ C ꢅ

580

560

540

520

500

480

460

440

700

600

500

400

300

200

100

-60

-20

100

140

180

125

175

T _j[°C]

/ ;Lꢋ ꢀ ꢋꢉ

F7=; ꢑ

ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ

IPA50R140CP

13 Typ. capacitances

14 Typ. Coss stored energy

C 6X"V _=Lꢐꢄ V _@Lꢇ ꢁ 3 ꢄ f ꢇ ꢉ * % P

E _aee= X(V _=L)

10⁵

10⁴

<[ee

10³

<aee

10²

10¹

<dee

10⁰

100

200

300

400

500

100

200

300

400

500

V _DS[V]

/ ;Lꢋ ꢀ ꢋꢉ

F7=; ꢕ

ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ

IPA50R140CP

Definition of diode switching characteristics

/ ;Lꢋ ꢀ ꢋꢉ

F7=; ꢒ

ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ

IPA50R140CP

PG-TO220-3-31: Outline / Fully isolated package (2500VAC; 1minute)

/ ;Lꢋ ꢀ ꢋꢉ

F7=; ꢊ

ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ

IPA50R140CP

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office

"iii'[`X[`Wa`'Ua_#'

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

/ ;Lꢋ ꢀ ꢋꢉ

F7=; ꢉ ꢁ

ꢀ ꢁ ꢉ ꢁ ꢃꢉ ꢀ ꢃꢀ ꢉ

IPA50R140CP [INFINEON]

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