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IPA60R190P6 [INFINEON]

Metal Oxide Semiconductor Field Effect Transistor;
IPA60R190P6
型号： IPA60R190P6
厂家： Infineon    Infineon
描述：

Metal Oxide Semiconductor Field Effect Transistor
文件： 总19页 (文件大小：3097K)
中文：  中文翻译
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MOSFET  
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor  
CoolMOS™ꢀP6  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPx60R190P6  
DataꢀSheet  
Rev.ꢀ2.2  
Final  
PowerꢀManagementꢀ&ꢀMultimarket  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
TO-247  
D²PAK  
TO-220  
1ꢀꢀꢀꢀꢀDescription  
tab  
tab  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀP6ꢀseriesꢀcombinesꢀthe  
experienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.  
TheꢀofferedꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFET  
whileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlowꢀswitchingꢀandꢀconduction  
lossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompact,  
lighterꢀandꢀcooler.  
2
1
3
TO-220ꢀFP  
Features  
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss  
•ꢀVeryꢀhighꢀcommutationꢀruggedness  
Drain  
Pin 2, Tab  
•ꢀEasyꢀtoꢀuse/drive  
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound  
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20  
andꢀJESD22)  
Gate  
Pin 1  
Source  
Pin 3  
Applications  
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages  
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,ꢀTelecom  
andꢀUPS.  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Qg.typ  
Value  
650  
190  
37  
Unit  
V
mΩ  
nC  
A
ID,pulse  
57  
Eoss@400V  
Body diode di/dt  
4.9  
µJ  
500  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
IPW60R190P6  
IPB60R190P6  
Package  
Marking  
RelatedꢀLinks  
PG-TO 247  
PG-TO 263  
PG-TO 220  
6R190P6  
see Appendix A  
IPP60R190P6  
IPA60R190P6  
PG-TO 220 FullPAK  
Final Data Sheet  
2
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Final Data Sheet  
3
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
2ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
-
-
-
-
20.2  
12.7  
TC=25°C  
TC=100°C  
Continuous drain current1)  
ID  
A
Pulsed drain current2)  
ID,pulse  
EAS  
-
-
-
-
-
-
-
-
57  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, repetitive  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
-
419  
0.63  
3.5  
100  
20  
mJ  
mJ  
A
ID=3.5A; VDD=50V; see table 12  
EAR  
-
ID=3.5A; VDD=50V; see table 12  
-
IAR  
-
dv/dt  
VGS  
VGS  
-
V/ns VDS=0...400V  
-20  
-30  
V
V
static;  
30  
AC (f>1 Hz)  
Power dissipation (Non FullPAK)  
TO-220, TO-263, TO-247  
Ptot  
Ptot  
-
-
-
-
151  
34  
W
W
TC=25°C  
TC=25°C  
Power dissipation (FullPAK)  
TO-220FP  
Storage temperature  
Tstg  
Tj  
-55  
-55  
-
-
150  
150  
°C  
°C  
-
-
Operating junction temperature  
Mounting torque (Non FullPAK)  
TO-220, TO-247  
-
-
-
-
-
-
60  
50  
Ncm M3 and M3.5 screws  
Ncm M2.5 screws  
Mounting torque (FullPAK)  
TO-220FP  
Continuous diode forward current  
Diode pulse current2)  
IS  
-
-
-
-
17.5  
57  
A
A
TC=25°C  
IS,pulse  
TC=25°C  
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ  
see table 10  
Reverse diode dv/dt3)  
dv/dt  
dif/dt  
VISO  
-
-
-
-
-
-
15  
V/ns  
A/µs  
V
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ  
see table 10  
Maximum diode commutation speed  
500  
2500  
Insulation withstand voltage for  
TO-220FP  
Vrms,ꢀTC=25°C,ꢀt=1min  
1) Limited by Tj max. Maximum duty cycle D=0.75  
2) Pulse width tp limited by Tj,max  
3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG  
Final Data Sheet  
4
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(NonꢀFullPAK)ꢀTO-220,ꢀTO-247  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
0.83  
62  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W leaded  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
-
-
260  
°C  
1.6mm (0.063 in.) from case for 10s  
Tableꢀ4ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(FullPAK)ꢀTO-220FP  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
3.7  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
80  
°C/W leaded  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
-
-
260  
°C  
1.6mm (0.063 in.) from case for 10s  
Tableꢀ5ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀTO-263  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
0.83  
62  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
°C/W device on PCB, minimal footprint  
Device on 40mm*40mm*1.5mm  
epoxy PCB FR4 with 6cm² (one  
Thermal resistance, junction - ambient  
for SMD version  
layer, 70µm thickness) copper area  
for drain connection and cooling.  
PCB is vertical without air stream  
cooling.  
RthJA  
-
-
35  
-
45  
°C/W  
Soldering temperature, wave & reflow  
soldering allowed  
Tsold  
260  
°C  
reflow MSL1  
Final Data Sheet  
5
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ6ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
600  
3.5  
Typ.  
-
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
V
V
VGS=0V,ꢀID=1mA  
4.0  
4.5  
VDS=VGS,ꢀID=0.63mA  
-
-
-
10  
1
-
VDS=600,ꢀVGS=0V,ꢀTj=25°C  
VDS=600,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.171 0.190  
0.445  
VGS=10V,ꢀID=7.6A,ꢀTj=25°C  
VGS=10V,ꢀID=7.6A,ꢀTj=150°C  
RDS(on)  
RG  
-
-
3.4  
-
Ω
f=1MHz,ꢀopenꢀdrain  
Tableꢀ7ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
1750  
76  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
Coss  
Effective output capacitance,  
energy related1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
61  
264  
15  
8
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance,  
time related2)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=9.5A,  
RG=3.4Ω;ꢀseeꢀtableꢀ11  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=9.5A,  
RG=3.4Ω;ꢀseeꢀtableꢀ11  
VDD=400V,ꢀVGS=13V,ꢀID=9.5A,  
RG=3.4Ω;ꢀseeꢀtableꢀ11  
Turn-off delay time  
Fall time  
td(off)  
tf  
45  
7
VDD=400V,ꢀVGS=13ꢀV,ꢀID=9.5A,  
RG=3.4Ω;ꢀseeꢀtableꢀ11  
Tableꢀ8ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
11  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=9.5A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=9.5A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=9.5A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=9.5A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
13  
Qg  
37  
Gate plateau voltage  
Vplateau  
6.1  
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
6
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
Tableꢀ9ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
0.9  
-
V
VGS=0V,ꢀIF=9.5A,ꢀTj=25°C  
VR=400V,ꢀIF=9.5A,ꢀdiF/dt=100A/µs;  
see table 10  
-
-
-
310  
4
-
-
-
ns  
VR=400V,ꢀIF=9.5A,ꢀdiF/dt=100A/µs;  
see table 10  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400V,ꢀIF=9.5A,ꢀdiF/dt=100A/µs;  
see table 10  
Peak reverse recovery current  
25  
Final Data Sheet  
7
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipationꢀ(NonꢀFullPAK)  
Diagramꢀ2:ꢀPowerꢀdissipationꢀ(FullPAK)  
160  
35  
140  
120  
100  
80  
30  
25  
20  
15  
10  
5
60  
40  
20  
0
0
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
Ptot=f(TC)  
Diagramꢀ3:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(NonꢀFullPAK) Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(FullPAK)  
101  
101  
0.5  
0.2  
100  
100  
0.5  
0.2  
0.1  
0.05  
0.1  
0.02  
10-1  
10-1  
0.05  
0.02  
0.01  
0.01  
single pulse  
single pulse  
10-2  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tpꢀ[s]  
tpꢀ[s]  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
8
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
Diagramꢀ5:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)  
Diagramꢀ6:ꢀSafeꢀoperatingꢀareaꢀ(FullPAK)  
102  
102  
1 µs  
1 µs  
10 µs  
10 µs  
100 µs  
101  
100 µs  
101  
1 ms  
1 ms  
10 ms  
100  
10 ms  
100  
10-1  
10-2  
10-3  
DC  
10-1  
DC  
10-2  
10-3  
10-4  
100  
101  
102  
103  
100  
101  
102  
103  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ7:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)  
Diagramꢀ8:ꢀSafeꢀoperatingꢀareaꢀ(FullPAK)  
102  
102  
1 µs  
1 µs  
10 µs  
100 µs  
10 µs  
101  
100 µs  
1 ms  
10 ms  
101  
100  
1 ms  
10 ms  
100  
10-1  
10-2  
10-3  
10-4  
DC  
DC  
10-1  
10-2  
10-3  
100  
101  
102  
103  
100  
101  
102  
103  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Final Data Sheet  
9
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
Diagramꢀ9:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀoutputꢀcharacteristics  
60  
40  
20 V  
10 V  
8 V  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
20 V  
10 V  
35  
8 V  
30  
7 V  
25  
20  
15  
10  
5
7 V  
6 V  
5.5 V  
6 V  
5 V  
5.5 V  
5 V  
4.5 V  
4.5 V  
0
0
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ11:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ12:ꢀDrain-sourceꢀon-stateꢀresistance  
1.50  
1.40  
1.30  
1.20  
1.10  
1.00  
0.90  
0.50  
0.45  
0.40  
0.35  
0.30  
6 V  
6.5 V  
5.5 V  
7 V  
98%  
typ  
0.80  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.25  
10 V  
20 V  
0.20  
0.15  
0.10  
0.05  
0
10  
20  
30  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=7.6ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
10  
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
Diagramꢀ13:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
60  
10  
25 °C  
9
8
50  
40  
30  
20  
10  
0
120 V  
480 V  
7
6
5
4
3
2
1
0
150 °C  
0
2
4
6
8
10  
12  
0
10  
20  
30  
40  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=9.5ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ16:ꢀAvalancheꢀenergy  
102  
450  
400  
350  
300  
250  
200  
150  
100  
50  
101  
125 °C  
25 °C  
100  
10-1  
0
0.0  
0.5  
1.0  
1.5  
2.0  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=3.5ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
11  
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
Diagramꢀ17:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ18:ꢀTyp.ꢀcapacitances  
700  
104  
680  
660  
640  
620  
600  
580  
560  
540  
520  
Ciss  
103  
102  
Coss  
101  
Crss  
100  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
Diagramꢀ19:ꢀTyp.ꢀCossꢀstoredꢀenergy  
7
6
5
4
3
2
1
0
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
12  
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
6ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ10ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
V,I  
Rg1  
VDS(peak)  
VDS  
VDS  
trr  
VDS  
IF  
tF  
tS  
dIF / dt  
Rg 2  
IF  
t
10%Irrm  
Q
F
Q
S
IF  
dI / dt  
rr  
trr =tF +tS  
rr  
Irrm  
Q =QF +Q  
S
Rg1 = Rg 2  
Tableꢀ11ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ12ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
13  
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
7ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
14  
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ263,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
15  
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
16  
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
MILLIMETERS  
INCHES  
DIM  
MIN  
4.50  
2.34  
2.42  
0.65  
0.95  
0.95  
0.65  
0.65  
0.40  
MAX  
4.90  
2.85  
2.86  
0.90  
1.38  
1.51  
1.38  
1.51  
0.63  
16.15  
9.83  
10.65  
MIN  
MAX  
0.193  
0.112  
0.113  
0.035  
0.054  
0.059  
0.054  
0.059  
0.025  
0.636  
0.387  
0.419  
DOCUMENT NO.  
Z8B00003319  
A
A1  
A2  
b
0.177  
0.092  
0.095  
0.026  
0.037  
0.037  
0.026  
0.026  
0.016  
0.617  
0.353  
0.394  
0
SCALE  
b1  
b2  
b3  
b4  
c
2.5  
0
2.5  
5mm  
D
15.67  
8.97  
EUROPEAN PROJECTION  
D1  
E
10.00  
2.54 (BSC)  
0.100 (BSC)  
e
e1  
N
5.08  
3
0.200  
3
H
28.70  
12.78  
2.83  
29.75  
13.75  
3.45  
1.130  
0.503  
0.111  
0.116  
0.124  
1.171  
0.541  
0.136  
0.133  
0.138  
ISSUE DATE  
05-05-2014  
L
L1  
¡3  
Q
REVISION  
2.95  
3.38  
04  
3.15  
3.50  
Figureꢀ4ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAK,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
17  
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
8ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ13ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSTMꢀP6ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀP6ꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolMOSTMꢀP6ꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
18  
Rev.ꢀ2.2,ꢀꢀ2015-07-10  
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor  
IPW60R190P6,ꢀIPB60R190P6,ꢀIPP60R190P6,  
IPA60R190P6  
RevisionꢀHistory  
IPW60R190P6, IPB60R190P6, IPP60R190P6, IPA60R190P6  
Revision:ꢀ2015-07-10,ꢀRev.ꢀ2.2  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2.1  
2.2  
2013-12-04  
2013-12-05  
2015-07-10  
Release of multi-package datasheet  
PG-TO 263 package added  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2015ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith  
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication  
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout  
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
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Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
19  
Rev.ꢀ2.2,ꢀꢀ2015-07-10  

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