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IPA60R199CP [INFINEON]

CoolMOS Power Transistor; 的CoolMOS功率晶体管
IPA60R199CP
型号： IPA60R199CP
厂家： Infineon    Infineon
描述：

CoolMOS Power Transistor
的CoolMOS功率晶体管

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件： 总10页 (文件大小：264K)
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IPA60R199CP  
CoolMOSTM Power Transistor  
Features  
Product Summary  
DS @ Tj,max  
R DS(on),max  
Q g,typ  
V
650  
0.199  
33  
V
• Lowest figure-of-merit RONxQg  
• Ultra low gate charge  
Ω
nC  
• Extreme dv/dt rated  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
PG-TO220-3-31  
• Pb-free lead plating; RoHS compliant  
CoolMOS CP is specially designed for:  
• Hard switching SMPS topologies  
Type  
Package  
Ordering Code  
Marking  
6R199P  
IPA60R199CP  
PG-TO220-3-31 SP000094146  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
Continuous drain current2)  
I D  
T C=25 °C  
16  
10  
A
T C=100 °C  
Pulsed drain current3)  
51  
I D,pulse  
E AS  
T C=25 °C  
I D=6.6 A, V DD=50 V  
Avalanche energy, single pulse  
436  
mJ  
A
3),4)  
3),4)  
E AR  
I AR  
I D=6.6 A, V DD=50 V  
0.66  
6.6  
Avalanche energy, repetitive t AR  
Avalanche current, repetitive t AR  
V
DS=0...480 V  
50  
±20  
MOSFET dv /dt ruggedness  
dv /dt  
V/ns  
V
V GS  
Gate source voltage  
static  
±30  
AC (f >1 Hz)  
T C=25 °C  
P tot  
34  
Power dissipation  
W
T j, T stg  
-55 ... 150  
50  
Operating and storage temperature  
Mounting torque  
°C  
M2.5 screws  
page 1  
Ncm  
Rev. 1.3  
2005-12-22  
IPA60R199CP  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
16  
Parameter  
Symbol Conditions  
Unit  
Continuous diode forward current2)  
Diode pulse current3)  
Reverse diode dv /dt 5)  
I S  
A
T C=25 °C  
I S,pulse  
51  
dv /dt  
15  
V/ns  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Thermal characteristics  
R thJC  
Thermal resistance, junction - case  
-
-
-
-
3.7  
80  
K/W  
Thermal resistance, junction -  
ambient  
R thJA  
leaded  
Soldering temperature,  
wavesoldering only allowed at leads  
1.6 mm (0.063 in.)  
from case for 10 s  
T sold  
-
-
260 °C  
Electrical characteristics, at T j=25 °C, unless otherwise specified  
Static characteristics  
V (BR)DSS  
V GS(th)  
V
V
GS=0 V, I D=250 µA  
DS=V GS, I D=1.1 mA  
Drain-source breakdown voltage  
Gate threshold voltage  
600  
2.5  
-
-
V
3
3.5  
V
DS=600 V, V GS=0 V,  
I DSS  
Zero gate voltage drain current  
-
-
-
1
-
µA  
T j=25 °C  
V
DS=600 V, V GS=0 V,  
10  
T j=150 °C  
I GSS  
V
V
GS=20 V, V DS=0 V  
GS=10 V, I D=9.9 A,  
Gate-source leakage current  
-
-
-
100 nA  
R DS(on)  
Drain-source on-state resistance  
0.18  
0.199  
Ω
T j=25 °C  
V
GS=10 V, I D=9.9 A,  
-
-
0.49  
2
-
T j=150 °C  
R G  
Gate resistance  
f =1 MHz, open drain  
-
Ω
Rev. 1.3  
page 2  
2005-12-22  
IPA60R199CP  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Dynamic characteristics  
C iss  
Input capacitance  
Output capacitance  
-
-
1520  
72  
-
-
pF  
ns  
V
GS=0 V, V DS=100 V,  
f =1 MHz  
C oss  
Effective output capacitance, energy  
related6)  
C o(er)  
-
-
69  
-
-
V
GS=0 V, V DS=0 V  
to 480 V  
Effective output capacitance, time  
related7)  
C o(tr)  
180  
t d(on)  
t r  
t d(off)  
t f  
Turn-on delay time  
Rise time  
-
-
-
-
10  
5
-
-
-
-
V
V
DD=400 V,  
GS=10 V, I D=9.9 A,  
Turn-off delay time  
Fall time  
50  
5
R G=3.3 Ω  
Gate Charge Characteristics  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Q gs  
-
-
-
-
8
-
-
nC  
Q gd  
11  
32  
5.0  
V
V
DD=400 V, I D=9.9 A,  
GS=0 to 10 V  
Q g  
43  
-
V plateau  
Gate plateau voltage  
V
V
Reverse Diode  
V
GS=0 V, I F=9.9 A,  
V SD  
Diode forward voltage  
-
0.9  
1.2  
T j=25 °C  
t rr  
Reverse recovery time  
-
-
-
340  
5.5  
33  
-
-
-
ns  
µC  
A
V R=400 V, I F=I S,  
di F/dt =100 A/µs  
Q rr  
I rrm  
Reverse recovery charge  
Peak reverse recovery current  
1) J-STD20 and JESD22  
2) Limited only by maximum temperature  
3) Pulse width t p limited by T j,max  
4) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.  
5)  
I
SD  
<=ID, di/dt<=200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.  
6) C o(er) is a fixed capacitance that gives the same stored energy asC oss while V DS is rising from 0 to 80% V DSS.  
7) C o(tr) is a fixed capacitance that gives the same charging time asC oss while V DS is rising from 0 to 80% V DSS.  
Rev. 1.3  
page 3  
2005-12-22  
IPA60R199CP  
1 Power dissipation  
2 Safe operating area  
I D=f(V DS); T C=25 °C; D =0  
parameter: t p  
P
tot=f(T C)  
102  
40  
limited by on-state  
resistance  
1 µs  
10 µs  
30  
20  
10  
100 µs  
101  
1 ms  
10 ms  
100  
DC  
10-1  
0
0
100  
101  
102  
103  
40  
80  
120  
160  
T
C [°C]  
V
DS [V]  
3 Max. transient thermal impedance  
thJC =f(t P)  
4 Typ. output characteristics  
I D=f(V DS); T j=25 °C  
Z
parameter: D=t p/T  
parameter: V GS  
101  
75  
60  
45  
30  
15  
0
20 V  
8 V  
10 V  
0.5  
100  
0.2  
7 V  
6 V  
0.1  
0.05  
0.02  
10-1  
5.5 V  
0.01  
5 V  
single pulse  
4.5 V  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
0
5
10  
15  
20  
V
DS [V]  
t
p [s]  
Rev. 1.3  
page 4  
2005-12-22  
IPA60R199CP  
5 Typ. output characteristics  
I D=f(V DS); T j=150 °C  
parameter: V GS  
6 Typ. drain-source on-state resistance  
DS(on)=f(I D); T j=150 °C  
R
parameter: V GS  
35  
30  
25  
20  
15  
10  
5
1.2  
6.5 V  
6 V  
20 V  
10 V  
5.5 V  
5 V  
1
0.8  
0.6  
0.4  
0.2  
7 V  
6 V  
8 V  
10 V  
5.5 V  
7 V  
5 V  
4.5 V  
0
0
0
0
5
10  
15  
20  
10  
20  
30  
40  
I
D [A]  
V
DS [V]  
7 Drain-source on-state resistance  
8 Typ. transfer characteristics  
I D=f(V GS); |V DS|>2|I D|R DS(on)max  
parameter: T j  
R
DS(on)=f(T j); I D=9.9 A; V GS=10 V  
0.6  
0.5  
0.4  
80  
60  
40  
20  
0
C °25  
0.3  
98 %  
C °150  
typ  
0.2  
0.1  
0
-60  
-20  
20  
60  
100  
140  
180  
0
2
4
6
8
10  
T j [°C]  
V GS [V]  
Rev. 1.3  
page 5  
2005-12-22  
IPA60R199CP  
9 Typ. gate charge  
GS=f(Q gate); I D=9.9 A pulsed  
10 Forward characteristics of reverse diode  
I F=f(V SD  
V
)
parameter: V DD  
parameter: T j  
102  
10  
9
8
7
6
5
4
3
2
1
25 °C, 98%  
150 °C, 98%  
120 V  
400 V  
25 °C  
101  
150 °C  
100  
10-1  
0
0
0
0.5  
1
1.5  
2
10  
20  
30  
40  
Q
gate [nC]  
V
SD [V]  
11 Avalanche energy  
12 Drain-source breakdown voltage  
E
AS=f(T j); I D=6.6 A; V DD=50 V  
V
BR(DSS)=f(T j); I D=0.25 mA  
500  
700  
400  
300  
200  
100  
0
660  
620  
580  
540  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
T j [°C]  
T j [°C]  
Rev. 1.3  
page 6  
2005-12-22  
IPA60R199CP  
13 Typ. capacitances  
14 Typ. Coss stored energy  
C =f(V DS); V GS=0 V; f =1 MHz  
E oss= f(V DS)  
105  
104  
12  
Ciss  
8
4
103  
102  
Coss  
101  
Crss  
100  
0
0
0
100  
200  
300  
DS [V]  
400  
500  
100  
200  
300  
400  
500  
600  
V
V
DS [V]  
Rev. 1.3  
page 7  
2005-12-22  
IPA60R199CP  
Definition of diode switching characteristics  
Rev. 1.3  
page 8  
2005-12-22  
IPA60R199CP  
PG-TO220-3-31: Outline/Fully isolated package (2500VAC; 1 minute)  
Dimensions in mm/inches  
Rev. 1.3  
page 9  
2005-12-22  
IPA60R199CP  
Published by  
Infineon Technologies AG  
Bereich Kommunikation  
St.-Martin-Straße 53  
D-81541 München  
© Infineon Technologies AG 1999  
All Rights Reserved.  
Attention please!  
The information herein is given to describe certain components and shall not be considered as  
warranted characteristics.  
Terms of delivery and rights to technical change reserved.  
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,  
regarding circuits, descriptions and charts stated herein.  
Infineon Technologies is an approved CECC manufacturer.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact your  
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide  
(see address list).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact your nearest Infineon Technologies office.  
Infineon Technologies' components may only be used in life-support devices or systems with the  
expressed written approval of Infineon Technologies if a failure of such components can reasonably  
be expected to cause the failure of that life-support device or system, or to affect the safety or  
effectiveness of that device or system. Life support devices or systems are intended to be implanted  
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons may be endangered.  
Rev. 1.3  
page 10  
2005-12-22  

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