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IPAN60R210PFD7S [INFINEON]

600V CoolMOS™ PFD7 超结 MOSFET (IPAN60R210PFD7S) 补充了CoolMOS™ 7 系列产品，可用于消费类应用。采用 TO-220 FullPAK 窄引脚封装的 IPAN60R210PFD7S 具有 210mOhm 的 RDS(on) ，降低了开关损耗。该产品配备了快速体二极管，可确保器件坚固耐用，进而为客户减少物料清单（BOM）。;
IPAN60R210PFD7S
型号： IPAN60R210PFD7S
厂家： Infineon    Infineon
描述：

600V CoolMOS™ PFD7 超结 MOSFET (IPAN60R210PFD7S) 补充了CoolMOS™ 7 系列产品，可用于消费类应用。采用 TO-220 FullPAK 窄引脚封装的 IPAN60R210PFD7S 具有 210mOhm 的 RDS(on) ，降低了开关损耗。该产品配备了快速体二极管，可确保器件坚固耐用，进而为客户减少物料清单（BOM）。

开关 二极管
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中文：  中文翻译
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IPAN60R210PFD7S  
MOSFET  
PG-TOꢀ220ꢀFP  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.  
TheꢀlatestꢀCoolMOS™ꢀPFD7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtarget  
costꢀsensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,  
motorꢀdrive,ꢀlighting,ꢀetc.  
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction  
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof  
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency  
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing  
towardsꢀveryꢀslimꢀdesigns.  
Drain  
Pin 2  
Features  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss  
•ꢀLowꢀswitchingꢀlossesꢀEoss,ꢀexcellentꢀthermalꢀbehavior  
•ꢀFastꢀbodyꢀdiode  
*1  
Gate  
Pin 1  
•ꢀWideꢀrangeꢀportfolioꢀofꢀRDS(on)ꢀandꢀpackageꢀvariations  
Source  
Pin 3  
*1: Internal body diode  
Benefits  
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors  
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies  
•ꢀExcellentꢀcommutationꢀruggedness  
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀandꢀoptimizeꢀtheꢀdesign  
Potentialꢀapplications  
RecommendedꢀforꢀZVSꢀtopologiesꢀusedꢀinꢀhighꢀdensityꢀchargers,  
adapters,ꢀlightingꢀandꢀmotorꢀdrivesꢀapplications,ꢀetc.  
Productꢀvalidation  
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Value  
650  
210  
23  
Unit  
V
mΩ  
nC  
A
Qg,typ  
ID,pulse  
42  
Eoss @ 400V  
Body diode diF/dt  
ESD Class (HBM)  
2.6  
µJ  
1300  
1C  
A/µs  
-
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
PG-TO 220 FullPAK -  
Narrow Lead  
IPAN60R210PFD7S  
60S210D7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2019-11-29  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
IPAN60R210PFD7S  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2019-11-29  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
IPAN60R210PFD7S  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
16  
10  
TC=25°C  
A
Continuous drain current1)  
ID  
TC=100°C  
Pulsed drain current2)  
ID,pulse  
EAS  
EAR  
IAS  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
42  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, single pulse  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
Power dissipation  
-
49  
mJ  
mJ  
A
ID=3.2A; VDD=50V; see table 10  
-
0.24  
3.2  
120  
20  
ID=3.2A; VDD=50V; see table 10  
-
-
dv/dt  
VGS  
VGS  
Ptot  
Tstg  
Tj  
-
V/ns VDS=0...400V  
-20  
-30  
-
V
static;  
30  
V
AC (f>1 Hz)  
25  
W
°C  
°C  
TC=25°C  
Storage temperature  
-40  
-40  
-
150  
150  
50  
-
-
Operating junction temperature  
Mounting torque  
-
Ncm M2.5 screws  
Continuous diode forward current1)  
Diode pulse current2)  
IS  
-
16  
A
A
TC=25°C  
TC=25°C  
IS,pulse  
-
42  
VDS=0...400V,ꢀISD<=12A,ꢀTj=25°Cꢀꢀꢀꢀꢀ  
see table 8  
Reverse diode dv/dt3)  
dv/dt  
-
-
70  
V/ns  
VDS=0...400V,ꢀISD<=12A,ꢀTj=25°Cꢀꢀꢀꢀꢀ  
see table 8  
Maximum diode commutation speed  
Insulation withstand voltage  
diF/dt  
-
-
-
-
1300 A/µs  
2500  
VISO  
V
Vrms,ꢀTC=25°C,ꢀt=1min  
1) Limited by Tj,max. Maximum Duty Cycle D = 0.50; DPAK / IPAK equivalent  
2) Pulse width tp limited by Tj,max  
3) Identical low side and high side switch with identical RG  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2019-11-29  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
IPAN60R210PFD7S  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
5.0  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
80  
°C/W leaded  
Thermal resistance, junction - ambient  
for SMD version  
RthJA  
-
-
-
-
-
°C/W n.a.  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
260  
°C  
1.6mm (0.063 in.) from case for 10s  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2019-11-29  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
IPAN60R210PFD7S  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
600  
3.5  
Typ.  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
-
V
V
VGS=0V,ꢀID=1mA  
4
4.5  
VDS=VGS,ꢀID=0.24mA  
-
-
-
5
1
37  
VDS=600V,ꢀVGS=0V,ꢀTj=25°C  
VDS=600V,ꢀVGS=0V,ꢀTj=125°C  
Zero gate voltage drain current1)  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.171 0.210  
0.386  
VGS=10V,ꢀID=4.9A,ꢀTj=25°C  
VGS=10V,ꢀID=4.9A,ꢀTj=150°C  
RDS(on)  
RG  
-
-
11.0  
-
Ω
f=1MHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
1015  
18  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
Coss  
Effective output capacitance, energy  
related2)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
33  
330  
20  
16  
57  
7
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance, time  
related3)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=10V,ꢀID=4.9A,  
RG=10.2Ω;ꢀseeꢀtableꢀ9  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=10V,ꢀID=4.9A,  
RG=10.2Ω;ꢀseeꢀtableꢀ9  
VDD=400V,ꢀVGS=10V,ꢀID=4.9A,  
RG=10.2Ω;ꢀseeꢀtableꢀ9  
Turn-off delay time  
Fall time  
td(off)  
tf  
VDD=400V,ꢀVGS=10V,ꢀID=4.9A,  
RG=10.2Ω;ꢀseeꢀtableꢀ9  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
6
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=4.9A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=4.9A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=4.9A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=4.9A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
7
Qg  
23  
Gate plateau voltage  
Vplateau  
5.7  
1) Maximum specification is defined by calculated six sigma upper confidence bound  
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2019-11-29  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
IPAN60R210PFD7S  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
1.0  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
-
V
VGS=0V,ꢀIF=4.9A,ꢀTj=25°C  
VR=400V,ꢀIF=4.9A,ꢀdiF/dt=100A/µs;  
see table 8  
-
-
-
87  
174  
0.68  
-
ns  
VR=400V,ꢀIF=4.9A,ꢀdiF/dt=100A/µs;  
see table 8  
Reverse recovery charge  
Qrr  
Irrm  
0.34  
6.8  
µC  
A
VR=400V,ꢀIF=4.9A,ꢀdiF/dt=100A/µs;  
see table 8  
Peak reverse recovery current  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2019-11-29  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
IPAN60R210PFD7S  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
30  
102  
1 µs  
101  
100  
25  
20  
15  
10  
5
10 µs  
100 µs  
10-1  
10-2  
10-3  
10-4  
10-5  
1 ms  
10 ms  
DC  
0
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
101  
1 µs  
101  
100  
10 µs  
0.5  
100  
0.2  
100 µs  
10-1  
10-2  
10-3  
10-4  
10-5  
0.1  
1 ms  
0.05  
0.02  
10 ms  
0.01  
10-1  
single pulse  
DC  
10-2  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2019-11-29  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
IPAN60R210PFD7S  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
60  
40  
20 V  
20 V  
10 V  
8 V  
50  
40  
30  
20  
10  
0
10 V  
8 V  
7 V  
30  
20  
10  
0
7 V  
6 V  
5.5 V  
5 V  
6 V  
5.5 V  
5 V  
4.5 V  
15  
4.5 V  
0
5
10  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
0.700  
2.5  
5.5 V  
6 V  
6.5 V  
7 V  
0.600  
0.500  
0.400  
0.300  
2.0  
1.5  
1.0  
0.5  
10 V  
20 V  
0
10  
20  
30  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=4.9ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2019-11-29  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
IPAN60R210PFD7S  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
60  
10  
25 °C  
9
8
7
6
5
4
3
2
1
0
50  
400 V  
120 V  
40  
150 °C  
30  
20  
10  
0
0
2
4
6
8
10  
12  
0
5
10  
15  
20  
25  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=4.9ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ12:ꢀAvalancheꢀenergy  
102  
50  
40  
30  
20  
10  
0
101  
125 °C  
25 °C  
100  
10-1  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=3.2ꢀA;ꢀVDD=50ꢀV  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2019-11-29  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
IPAN60R210PFD7S  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
690  
105  
104  
660  
630  
600  
570  
540  
103  
Ciss  
102  
Coss  
101  
Crss  
100  
10-1  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
4
3
2
1
0
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2019-11-29  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
IPAN60R210PFD7S  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
Rg1  
VDS  
Rg 2  
IF  
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2019-11-29  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
IPAN60R210PFD7S  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
MILLIMETERS  
DIMENSIONS  
DOCUMENT NO.  
Z8B00188573  
MIN.  
4.60  
2.60  
2.47  
0.56  
1.01  
0.46  
15.90  
9.58  
10.40  
MAX.  
4.80  
2.80  
2.67  
0.69  
1.15  
0.59  
16.10  
9.78  
10.60  
A
A1  
A2  
b
REVISION  
02  
SCALE 5:1  
b1  
c
5mm  
0
1
2
3
4
D
D1  
E
EUROPEAN PROJECTION  
e
2.54  
3
N
L
13.45  
1.70  
3.00  
3.25  
13.75  
1.91  
3.20  
3.45  
L1  
øP  
Q
ISSUE DATE  
21.03.2019  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAKꢀ-ꢀNarrowꢀLead,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
12  
Rev.ꢀ2.1,ꢀꢀ2019-11-29  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
IPAN60R210PFD7S  
7ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSꢀPFD7ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀCoolMOSꢀPFD7ꢀapplicationꢀnote:ꢀwww.infineon.com  
• IFXꢀCoolMOSꢀPFD7ꢀsimulationꢀmodel:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
13  
Rev.ꢀ2.1,ꢀꢀ2019-11-29  
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
IPAN60R210PFD7S  
RevisionꢀHistory  
IPAN60R210PFD7S  
Revision:ꢀ2019-11-29,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2.1  
2019-04-09  
2019-11-29  
Modified current Id and Is ratings  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2019ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
14  
Rev.ꢀ2.1,ꢀꢀ2019-11-29  

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