首页 |元器件品牌

IPAN65R650CE [INFINEON]

;
IPAN65R650CE
型号： IPAN65R650CE
厂家： Infineon    Infineon
描述：

文件： 总14页 (文件大小：733K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
IPAN65R650CE  
MOSFET  
PG-TOꢀ220ꢀFP  
650VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀisꢀa  
price-performanceꢀoptimizedꢀplatformꢀenablingꢀtoꢀtargetꢀcostꢀsensitive  
applicationsꢀinꢀConsumerꢀandꢀLightingꢀmarketsꢀbyꢀstillꢀmeetingꢀhighest  
efficiencyꢀstandards.ꢀTheꢀnewꢀseriesꢀprovidesꢀallꢀbenefitsꢀofꢀaꢀfast  
switchingꢀSuperjunctionꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuseꢀand  
offeringꢀtheꢀbestꢀcostꢀdownꢀperformanceꢀratioꢀavailableꢀonꢀtheꢀmarket.  
Features  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss  
•ꢀVeryꢀhighꢀcommutationꢀruggedness  
•ꢀEasyꢀtoꢀuse/drive  
Drain  
Pin 2, Tab  
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound  
•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications  
Gate  
Pin 1  
Applications  
Source  
Pin 3  
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages  
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀlighting.  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
ID.  
Value  
700  
650  
10.1  
23  
Unit  
V
mΩ  
A
Qg.typ  
nC  
A
ID,pulse  
18  
Eoss@400V  
2
µJ  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
PG-TO 220 FullPAK -  
Narrow Lead  
IPAN65R650CE  
65S650CE  
see Appendix A  
F
Final Data Sheet  
1
Rev.2.2, 2018-04-25  
650VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor  
IPAN65R650CE  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Final Data Sheet  
2
Rev.2.2, 2018-04-25  
650VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor  
IPAN65R650CE  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
10.1  
6.4  
TC=25°C  
A
Continuous drain current1)  
ID  
TC=100°C  
Pulsed drain current2)  
ID,pulse  
EAS  
-
-
-
-
-
-
-
-
18  
A
TC=25°C  
Avalanche energy, single pulse  
Avalanche energy, repetitive  
Avalanche current, repetitive  
MOSFET dv/dt ruggedness  
Gate source voltage (static)  
Gate source voltage (dynamic)  
-
142  
0.21  
1.3  
50  
mJ  
mJ  
A
ID=1.3A; VDD=50V; see table 11  
EAR  
-
ID=1.3A; VDD=50V; see table 11  
-
IAR  
-
dv/dt  
VGS  
VGS  
-
V/ns VDS=0...480V  
-20  
-30  
20  
V
V
static;  
30  
AC (f>1 Hz)  
Power dissipation (Non FullPAK)  
TO-252  
Ptot  
-
-
86  
W
TC=25°C  
Storage temperature  
Tstg  
Tj  
-40  
-40  
-
-
-
-
-
150  
150  
7.1  
18  
°C  
°C  
A
-
Operating junction temperature  
Continuous diode forward current  
Diode pulse current2)  
-
IS  
TC=25°C  
TC=25°C  
IS,pulse  
-
A
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ  
see table 9  
Reverse diode dv/dt3)  
dv/dt  
dif/dt  
Ptot  
-
-
-
-
-
-
-
-
-
-
15  
V/ns  
A/µs  
W
VDS=0...400V,ꢀISD<=IS,ꢀTj=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ  
see table 9  
Maximum diode commutation speed  
500  
28  
Power dissipation (FullPAK)  
TO-220FP  
TC=25°C  
Mounting torque (FullPAK)  
TO-220FP  
-
50  
Ncm M2.5 screws  
Vrms,ꢀTC=25°C,ꢀt=1min  
Insulation withstand voltage for  
TO-220FP  
VISO  
2500  
V
1) Limited by Tj max.TO252 equivalent, Maximum duty cycle D=0.50  
2) Pulse width tp limited by Tj,max  
3)ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG  
Final Data Sheet  
3
Rev.2.2, 2018-04-25  
650VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor  
IPAN65R650CE  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(FullPAK)ꢀTO-220FP  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
4.5  
Thermal resistance, junction - case  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
80  
°C/W leaded  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
-
-
260  
°C  
1.6mm (0.063 in.) from case for 10s  
Final Data Sheet  
4
Rev.2.2, 2018-04-25  
650VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor  
IPAN65R650CE  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
650  
2.5  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
V
V
VGS=0V,ꢀID=1mA  
3.0  
3.5  
VDS=VGS,ꢀID=0.21mA  
-
-
-
10  
1
-
VDS=650,ꢀVGS=0V,ꢀTj=25°C  
VDS=650,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IDSS  
µA  
nA  
Ω
IGSS  
-
-
100  
VGS=20V,ꢀVDS=0V  
-
-
0.54  
1.40  
0.65  
-
VGS=10V,ꢀID=2.1A,ꢀTj=25°C  
VGS=10V,ꢀID=2.1A,ꢀTj=150°C  
RDS(on)  
RG  
-
10.5  
-
Ω
f=1MHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
440  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
VGS=0V,ꢀVDS=100V,ꢀf=1MHz  
Coss  
30  
Effective output capacitance,  
energy related1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
21  
88  
10  
8
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...480V  
Effective output capacitance,  
time related2)  
ID=constant,ꢀVGS=0V,ꢀVDS=0...480V  
VDD=400V,ꢀVGS=13V,ꢀID=3.2A,  
RG=6.8Ω;ꢀseeꢀtableꢀ10  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=3.2A,  
RG=6.8Ω;ꢀseeꢀtableꢀ10  
VDD=400V,ꢀVGS=13V,ꢀID=3.2A,  
RG=6.8Ω;ꢀseeꢀtableꢀ10  
Turn-off delay time  
Fall time  
td(off)  
tf  
64  
11  
VDD=400V,ꢀVGS=13ꢀV,ꢀID=3.2A,  
RG=6.8Ω;ꢀseeꢀtableꢀ10  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
2.75  
12  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=480V,ꢀID=3.2A,ꢀVGS=0ꢀtoꢀ10V  
VDD=480V,ꢀID=3.2A,ꢀVGS=0ꢀtoꢀ10V  
VDD=480V,ꢀID=3.2A,ꢀVGS=0ꢀtoꢀ10V  
VDD=480V,ꢀID=3.2A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
Qg  
23  
Gate plateau voltage  
Vplateau  
5.5  
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ80%ꢀVo(BR)DSS  
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ80%ꢀVo(BR)DSS  
Final Data Sheet  
5
Rev.2.2, 2018-04-25  
650VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor  
IPAN65R650CE  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
0.9  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
Reverse recovery time  
VSD  
trr  
-
-
V
VGS=0V,ꢀIF=3.2A,ꢀTj=25°C  
VR=400V,ꢀIF=3.2A,ꢀdiF/dt=100A/µs;  
see table 9  
-
-
-
270  
2
-
-
-
ns  
VR=400V,ꢀIF=3.2A,ꢀdiF/dt=100A/µs;  
see table 9  
Reverse recovery charge  
Qrr  
Irrm  
µC  
A
VR=400V,ꢀIF=3.2A,ꢀdiF/dt=100A/µs;  
see table 9  
Peak reverse recovery current  
13  
Final Data Sheet  
6
Rev.2.2, 2018-04-25  
650VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor  
IPAN65R650CE  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ2:ꢀPowerꢀdissipationꢀ(FullPAK)  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(FullPAK)  
30  
101  
25  
20  
15  
10  
5
0.5  
0.2  
100  
0.1  
0.05  
0.02  
10-1  
0.01  
single pulse  
0
10-2  
0
25  
50  
75  
100  
125  
150  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
TCꢀ[°C]  
tpꢀ[s]  
Ptot=f(TC)  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Diagramꢀ6:ꢀSafeꢀoperatingꢀareaꢀ(FullPAK)  
Diagramꢀ8:ꢀSafeꢀoperatingꢀareaꢀ(FullPAK)  
102  
102  
1 µs  
1 µs  
101  
100  
10 µs  
101  
10 µs  
100 µs  
1 ms  
100 µs  
1 ms  
10 ms  
100  
10-1  
10-2  
10-3  
10-4  
10 ms  
DC  
DC  
10-1  
10-2  
10-3  
10-4  
100  
101  
102  
103  
100  
101  
102  
103  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
F
Final Data Sheet  
7
Rev.2.2, 2018-04-25  
650VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor  
IPAN65R650CE  
Diagramꢀ9:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀoutputꢀcharacteristics  
20  
12  
20 V  
20 V  
10 V  
10 V  
7 V  
8 V  
16  
9
6
3
0
8 V  
12  
6 V  
7 V  
8
5.5 V  
6 V  
5 V  
5.5 V  
4
4.5 V  
5 V  
4.5 V  
0
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ11:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ12:ꢀDrain-sourceꢀon-stateꢀresistance  
2.0  
1.60  
1.50  
1.40  
1.30  
1.20  
1.10  
1.00  
1.9  
1.8  
1.7  
1.6  
7 V  
5 V  
5.5 V  
6 V  
6.5 V  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.90  
0.80  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
98%  
10 V  
typ  
0
2
4
6
8
10  
12  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=2.1ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
8
Rev.2.2, 2018-04-25  
650VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor  
IPAN65R650CE  
Diagramꢀ13:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
20  
10  
25 °C  
18  
9
8
7
6
5
4
3
2
1
0
16  
14  
12  
120 V  
480 V  
10  
150 °C  
8
6
4
2
0
0
2
4
6
8
10  
12  
0
5
10  
15  
20  
25  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=3.2ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ16:ꢀAvalancheꢀenergy  
102  
150  
25 °C  
125 °C  
125  
100  
75  
50  
25  
0
101  
100  
10-1  
0.0  
0.5  
1.0  
1.5  
2.0  
25  
50  
75  
100  
125  
150  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
EAS=f(Tj);ꢀID=1.3ꢀA;ꢀVDD=50ꢀV  
F
Final Data Sheet  
9
Rev.2.2, 2018-04-25  
650VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor  
IPAN65R650CE  
Diagramꢀ17:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagramꢀ18:ꢀTyp.ꢀcapacitances  
740  
104  
720  
700  
680  
660  
640  
620  
600  
580  
103  
Ciss  
102  
Coss  
101  
Crss  
100  
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
0
100  
200  
300  
400  
500  
Tjꢀ[°C]  
VDSꢀ[V]  
VBR(DSS)=f(Tj);ꢀID=1.0ꢀmA  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
Diagramꢀ19:ꢀTyp.ꢀCossꢀstoredꢀenergy  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
Eoss=f(VDS  
)
Final Data Sheet  
10  
Rev.2.2, 2018-04-25  
650VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor  
IPAN65R650CE  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
V,I  
VDS  
Rg1  
VDS(peak)  
VDS  
trr  
VDS  
IF  
tF  
tS  
dIF / dt  
Rg 2  
IF  
t
10%Irrm  
Q
F
Q
S
IF  
dI / dt  
rr  
trr =tF +tS  
rr  
Irrm  
Q =QF +Q  
S
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
11  
Rev.2.2, 2018-04-25  
650VꢀCoolMOS™ꢀCEꢀPowerꢀTransistor  
IPAN65R650CE  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
DOCUMENT NO.  
Z8B00188573  
REVISION  
01  
SCALE 5:1  
5mm  
0
1
2
3
4
EUROPEAN PROJECTION  
ISSUE DATE  
22.03.2018  
MILLIMETERS  
MAX.  
4.80  
DIMENSIONS  
MIN.  
4.60  
2.60  
2.47  
0.56  
1.01  
0.46  
15.90  
9.58  
10.40  
A
A1  
A2  
b
2.80  
2.67  
0.69  
b1  
c
1.15  
0.59  
D
16.10  
9.78  
D1  
E
10.60  
2.54  
e
N
3
L
13.45  
1.70  
3.00  
3.25  
13.75  
1.91  
L1  
øP  
Q
3.20  
3.45  
Figure 1 Outline PG-TO 220 FullPAK - Narrow Lead, dimensions in mm  
Final Data Sheet  
12  
Rev.2.2, 2018-04-25  
650V CoolMOS™ CE Power Transistor  
IPAN65R650CE  
7
Appendix A  
Table 11 Related Links  
• IFX CoolMOSTM CE Webpage: www.infineon.com  
• IFX CoolMOSTM CE application note: www.infineon.com  
• IFX CoolMOSTM CE simulation model: www.infineon.com  
• IFX Design tools: www.infineon.com  
F
Final Data Sheet  
13  
Rev.2.2, 2018-04-25  
650VꢀCoolMOSªꢀCEꢀPowerꢀTransistor  
IPAN65R650CE  
RevisionꢀHistory  
IPAN65R650CE  
Revision:ꢀ2018-04-30,ꢀRev.ꢀ2.2  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
2.2  
Release of final version  
2016-04-27  
2016-11-28  
2018-04-30  
Revised package drawing on page 11  
Revised package drawing  
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,  
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,  
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,  
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,  
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.  
TrademarksꢀupdatedꢀAugustꢀ2015  
OtherꢀTrademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2018ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
14  
Rev.ꢀ2.2,ꢀꢀ2018-04-30  

相关型号：

IPAN70R600P7S

 顺应当下和未来反激式拓扑产品的趋势而开发—— 700V CoolMOS™ P7 超结 MOSFET 系列产品具有比目前所使用超结技术更强的性能，适用于手机充电器或笔记本电脑适配器等低功率 SMPS 市场。客户反馈与 20 多年的超结 MOSFET 经验相结合，700V CoolMOS™ P7 在诸多方面成为目标应用的最佳选择：
INFINEON

IPAN70R750P7S

 顺应当下和未来反激式拓扑产品的趋势而开发—— 700V CoolMOS™ P7 超结 MOSFET 系列产品具有比目前所使用超结技术更强的性能，适用于手机充电器或笔记本电脑适配器等低功率 SMPS 市场。客户反馈与 20 多年的超结 MOSFET 经验相结合，700V CoolMOS™ P7 在诸多方面成为目标应用的最佳选择：
INFINEON

IPAW60R190CEXKSA1

 Power Field-Effect Transistor,
INFINEON

IPAW60R280P7SXKSA1

 Power Field-Effect Transistor, 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
INFINEON

IPAW60R360P7SXKSA1

 Power Field-Effect Transistor, 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
INFINEON

IPAW60R600P7SXKSA1

 Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
INFINEON

IPB009N03LG

 OptiMOS3 Power Transistor
INFINEON

IPB009N03LGATMA1

 Power Field-Effect Transistor, 180A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 7 PIN
INFINEON

IPB010N06N

 New OptiMOS™ 40V and 60V
INFINEON

IPB011N04L G

 OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON

IPB011N04LG

 OptiMOS3 Power Transistor
INFINEON

IPB011N04LGATMA1

 Power Field-Effect Transistor, 180A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明