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IPAN70R600P7S [INFINEON]

顺应当下和未来反激式拓扑产品的趋势而开发—— 700V CoolMOS™ P7 超结 MOSFET 系列产品具有比目前所使用超结技术更强的性能，适用于手机充电器或笔记本电脑适配器等低功率 SMPS 市场。客户反馈与 20 多年的超结 MOSFET 经验相结合，700V CoolMOS™ P7 在诸多方面成为目标应用的最佳选择：;
IPAN70R600P7S
型号： IPAN70R600P7S
厂家： Infineon    Infineon
描述：

顺应当下和未来反激式拓扑产品的趋势而开发—— 700V CoolMOS™ P7 超结 MOSFET 系列产品具有比目前所使用超结技术更强的性能，适用于手机充电器或笔记本电脑适配器等低功率 SMPS 市场。客户反馈与 20 多年的超结 MOSFET 经验相结合，700V CoolMOS™ P7 在诸多方面成为目标应用的最佳选择：

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IPAN70R600P7S  
MOSFET  
PG-TOꢀ220ꢀFP  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.  
TheꢀlatestꢀCoolMOS™ꢀP7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtargetꢀcost  
sensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,  
lighting,ꢀTV,ꢀetc.  
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction  
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof  
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency  
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing  
towardsꢀveryꢀslimꢀdesigns.  
Drain  
Pin 2, Tab  
Features  
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss  
•ꢀExcellentꢀthermalꢀbehavior  
•ꢀIntegratedꢀESDꢀprotectionꢀdiode  
Gate  
Pin 1  
•ꢀLowꢀswitchingꢀlossesꢀ(Eoss  
•ꢀProductꢀvalidationꢀacc.ꢀJEDECꢀStandard  
)
Source  
Pin 3  
Benefits  
•ꢀCostꢀcompetitiveꢀtechnology  
•ꢀLowerꢀtemperature  
•ꢀHighꢀESDꢀruggedness  
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies  
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors  
Potentialꢀapplications  
RecommendedꢀforꢀFlybackꢀtopologiesꢀforꢀexampleꢀusedꢀinꢀChargers,  
Adapters,ꢀLightingꢀApplications,ꢀetc.  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj=25°C  
RDS(on),max  
Value  
700  
0.6  
10.5  
20.5  
1.2  
3
Unit  
V
Ω
Qg,typ  
nC  
A
ID,pulse  
Eoss @ 400V  
V(GS)th,typ  
µJ  
V
ESD class (HBM)  
2
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
PG-TO 220 FullPAK -  
Narrow Lead  
IPAN70R600P7S  
70S600P7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2018-02-13  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPAN70R600P7S  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2018-02-13  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPAN70R600P7S  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
8.5  
5.0  
TC = 20°C  
A
Continuous drain current1)  
Pulsed drain current2)  
ID  
TC = 100°C  
ID,pulse  
IAS  
-
-
-
-
-
-
20.5  
3.2  
A
A
TC=25°C  
Application (Flyback) relevant  
avalanche current, single pulse3)  
measured with standard leakage  
inductance of transformer of 7µH  
MOSFET dv/dt ruggedness  
Gate source voltage  
dv/dt  
VGS  
100  
V/ns VDSꢀ=0...400V  
-16  
-30  
-
-
16  
30  
static;  
V
AC (f>1 Hz)  
Power dissipation  
Ptot  
-
-
-
-
-
-
-
-
24.9  
150  
4.5  
W
°C  
A
TC=25°C  
-
Operating and storage temperature  
Continuous diode forward current  
Diode pulse current2)  
Reverse diode dv/dt4)  
Maximum diode commutation speed4) dif/dt  
Tj,ꢀTstg  
IS  
-40  
-
-
-
-
-
TC=25°C  
TC = 25°C  
IS,pulse  
20.5  
1
A
dv/dt  
V/ns VDSꢀ=0...400V,ꢀISD<=IS,ꢀTj=25°C  
A/µs VDSꢀ=0...400V,ꢀISD<=IS,ꢀTj=25°C  
50  
Insulation withstand voltage VISO  
2500  
V
Vrms, TC=25°C, t=1min  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
5.0  
Thermal resistance, junction  
RthJC  
-
-
-
-
°C/W -  
Thermal resistance, junction - ambient RthJA  
80  
°C/W leaded  
Thermal resistance, junction - ambient  
for SMD version  
RthJA  
-
-
-
-
-
°C/W n.a.  
Soldering temperature, wavesoldering  
only allowed at leads  
Tsold  
260  
°C  
1.6 mm (0.063 in.) from case for 10s  
1) DPAK / IPAK equivalent. Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5  
2) Pulse width tp limited by Tj,max  
3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7.  
4)ꢀVDClink=400V;ꢀVDS,peak<V(BR)DSS;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀRG  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2018-02-13  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPAN70R600P7S  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
700  
Typ.  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
V(GS)th  
-
V
V
VGS=0V,ꢀID=1mA  
2.50  
3
3.50  
VDS=VGS,ꢀID=0.09mA  
-
-
-
10  
1
-
VDS=700V,ꢀVGS=0V,ꢀTj=25°C  
VDS=700V,ꢀVGS=0V,ꢀTj=150°C  
Zero gate voltage drain current  
IDSS  
µA  
µA  
Gate-source leakage current incl. Zener  
diode  
IGSS  
RDS(on)  
RG  
-
-
1
VGS=20V,ꢀVDS=0V  
-
-
0.49  
1.03  
0.60  
-
VGS=10V,ꢀID=1.8A,ꢀTj=25°C  
VGS=10V,ꢀID=1.8A,ꢀTj=150°C  
Drain-source on-state resistance  
Gate resistance  
Ω
Ω
-
10  
-
f=1ꢀMHz,ꢀopenꢀdrain  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
364  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance  
Ciss  
-
-
-
-
pF  
pF  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
VGS=0V,ꢀVDS=400V,ꢀf=250kHz  
Coss  
7
Effective output capacitance, energy  
related1)  
Co(er)  
Co(tr)  
td(on)  
tr  
-
-
-
-
-
-
17  
-
-
-
-
-
-
pF  
pF  
ns  
ns  
ns  
ns  
VGS=0V,ꢀVDS=0...400V  
Effective output capacitance, time  
related2)  
200  
14  
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V  
VDD=400V,ꢀVGS=13V,ꢀID=1.4A,  
RG=5.3Ω  
Turn-on delay time  
Rise time  
VDD=400V,ꢀVGS=13V,ꢀID=1.4A,  
RG=5.3Ω  
5.5  
63  
VDD=400V,ꢀVGS=13V,ꢀID=1.4A,  
RG=5.3Ω  
Turn-off delay time  
Fall time  
td(off)  
tf  
VDD=400V,ꢀVGS=13V,ꢀID=1.4A,  
RG=5.3Ω  
23  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  
Values  
Typ.  
1.6  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Gate charge total  
Qgs  
-
-
-
-
-
-
-
-
nC  
nC  
nC  
V
VDD=400V,ꢀID=1.4A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=1.4A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=1.4A,ꢀVGS=0ꢀtoꢀ10V  
VDD=400V,ꢀID=1.4A,ꢀVGS=0ꢀtoꢀ10V  
Qgd  
3.7  
Qg  
10.5  
4.4  
Gate plateau voltage  
Vplateau  
1)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
2)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2018-02-13  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPAN70R600P7S  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  
Values  
Typ.  
0.9  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Diode forward voltage  
VSD  
trr  
-
-
-
-
-
-
-
-
V
VGS=0V,ꢀIF=2.5A,ꢀTj=25°C  
Reverse recovery time  
190  
0.8  
ns  
µC  
A
VR=400V,ꢀIF=1.4A,ꢀdiF/dt=50A/µs  
VR=400V,ꢀIF=1.4A,ꢀdiF/dt=50A/µs  
VR=400V,ꢀIF=1.4A,ꢀdiF/dt=50A/µs  
Reverse recovery charge  
Peak reverse recovery current  
Qrr  
Irrm  
9
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2018-02-13  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPAN70R600P7S  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  
30  
102  
1 µs  
25  
20  
15  
10  
5
10 µs  
101  
100  
100 µs  
1 ms  
10 ms  
10-1  
10-2  
10-3  
DC  
0
0
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TCꢀ[°C]  
VDSꢀ[V]  
Ptot=f(TC)  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
101  
101  
100  
1 µs  
10 µs  
100 µs  
0.5  
0.2  
1 ms  
100  
10 ms  
0.1  
10-1  
10-2  
10-3  
0.05  
0.02  
DC  
0.01  
single pulse  
10-1  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJCꢀ=f(tP);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2018-02-13  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPAN70R600P7S  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  
25  
18  
20 V  
10 V  
8 V  
20 V  
10 V  
16  
14  
12  
10  
8
8 V  
7 V  
20  
7 V  
6 V  
15  
10  
5
6 V  
5.5 V  
5.5 V  
5 V  
6
5 V  
4
4.5 V  
4.5 V  
2
0
0
0
5
10  
15  
20  
0
5
10  
15  
20  
VDSꢀ[V]  
VDSꢀ[V]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
ID=f(VDS);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  
3.0  
2.00  
6.5 V  
7 V  
1.80  
1.60  
1.40  
1.20  
2.5  
6 V  
5.5 V  
2.0  
5 V  
10 V  
1.5  
1.00  
98%  
0.80  
1.0  
0.5  
0.0  
0.60  
0.40  
0.20  
0.00  
typ  
0
5
10  
15  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IDꢀ[A]  
Tjꢀ[°C]  
RDS(on)=f(ID);ꢀTj=125ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(Tj);ꢀID=1.8ꢀA;ꢀVGS=10ꢀV  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2018-02-13  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPAN70R600P7S  
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  
25  
10  
9
8
20  
15  
10  
5
25 °C  
120 V  
7
400 V  
6
5
4
3
2
1
0
150 °C  
0
0
2
4
6
8
10  
12  
0
5
10  
15  
VGSꢀ[V]  
Qgateꢀ[nC]  
ID=f(VGS);ꢀVDS=20V;ꢀparameter:ꢀTj  
VGS=f(Qgate);ꢀID=1.4ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  
102  
840  
25 °C  
125 °C  
820  
800  
780  
760  
740  
720  
700  
680  
660  
640  
620  
600  
101  
100  
10-1  
0
1
2
3
-75 -50 -25  
0
25  
50  
75 100 125 150 175  
VSDꢀ[V]  
Tjꢀ[°C]  
IF=f(VSD);ꢀparameter:ꢀTj  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2018-02-13  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPAN70R600P7S  
Diagramꢀ14:ꢀTyp.ꢀcapacitances  
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  
104  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
103  
Ciss  
102  
101  
Coss  
Crss  
100  
10-1  
0
100  
200  
300  
400  
500  
0
100  
200  
300  
400  
500  
600  
700  
VDSꢀ[V]  
VDSꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=250ꢀkHz  
Eoss=f(VDS)  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2018-02-13  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPAN70R600P7S  
5ꢀꢀꢀꢀꢀTestꢀCircuits  
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  
Test circuit for diode characteristics  
Diode recovery waveform  
Rg1  
VDS  
Rg 2  
IF  
Rg1 = Rg 2  
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes  
Switching times test circuit for inductive load  
Switching times waveform  
VDS  
90%  
10%  
VDS  
VGS  
VGS  
td(off)  
tf  
td(on)  
ton  
tr  
toff  
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  
Unclamped inductive load test circuit  
Unclamped inductive waveform  
V(BR)DS  
ID  
VDS  
VDS  
VDS  
ID  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2018-02-13  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPAN70R600P7S  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
MILLIMETERS  
DIMENSIONS  
DOCUMENT NO.  
Z8B00180155  
MIN.  
4.60  
2.60  
2.47  
0.56  
1.01  
0.46  
15.90  
9.58  
10.40  
MAX.  
4.80  
2.80  
2.67  
0.69  
1.15  
0.59  
16.10  
9.78  
10.60  
A
A1  
A2  
b
REVISION  
04  
SCALE 5:1  
b1  
c
5mm  
0
1
2
3
4
D
D1  
E
EUROPEAN PROJECTION  
e
2.54  
3
N
L
13.45  
1.70  
3.00  
3.25  
13.75  
1.90  
3.20  
3.45  
L1  
¡3  
Q
ISSUE DATE  
07.11.2016  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAKꢀ-ꢀNarrowꢀLead,ꢀdimensionsꢀinꢀmmꢀ-ꢀIndustrialꢀGrade  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2018-02-13  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPAN70R600P7S  
7ꢀꢀꢀꢀꢀAppendixꢀA  
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  
• IFXꢀCoolMOSªꢀP7ꢀWebpage:ꢀwww.infineon.com  
• IFXꢀDesignꢀtools:ꢀwww.infineon.com  
Final Data Sheet  
12  
Rev.ꢀ2.1,ꢀꢀ2018-02-13  
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor  
IPAN70R600P7S  
RevisionꢀHistory  
IPAN70R600P7S  
Revision:ꢀ2018-02-13,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
Release of final version  
Corrected front page text  
2017-02-16  
2018-02-13  
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,  
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,  
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,  
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,  
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.  
TrademarksꢀupdatedꢀAugustꢀ2015  
OtherꢀTrademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2018ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
13  
Rev.ꢀ2.1,ꢀꢀ2018-02-13  

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