IPB015N06NF2S [INFINEON]
Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.5 mOhm, addressing a broad range of applications from low- to high-switching frequency.;
| 型号： | IPB015N06NF2S |
| 厂家： | 
Infineon |
| 描述： | Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.5 mOhm, addressing a broad range of applications from low- to high-switching frequency. |
| 文件： | 总11页 (文件大小：1051K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB015N06NF2S
MOSFET
StrongIRFETTM2ꢀPower-Transistor
D²PAK
Features
tab
•ꢀOptimizedꢀforꢀwideꢀrangeꢀofꢀapplications
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀ100%ꢀavalancheꢀtested
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
2
1
3
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
Drain
Pin 2, Tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
Gate
Pin 1
VDS
60
V
RDS(on),max
ID
1.5
mΩ
A
Source
Pin 3
195
153
155
Qoss
nC
nC
QG (0V..10V)
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPB015N06NF2S
PG-TO263-3
015N06NS
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2022-10-17
StrongIRFETTM2ꢀPower-Transistor
IPB015N06NF2S
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2022-10-17
StrongIRFETTM2ꢀPower-Transistor
IPB015N06NF2S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
VGS=10V,ꢀTC=25°C
VGS=10V,ꢀTC=100°C
-
-
-
-
-
-
195
150
37
Continuous drain current1)
ID
A
VGS=10ꢀV,ꢀTA=25ꢀ°C,
RTHJA=40ꢀ°C/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
780
727
20
A
TA=25°C
-
mJ
V
ID=100A,ꢀRGS=25Ω
Gate source voltage
VGS
-20
-
-
-
-
-
250
3.8
TC=25°C
Power dissipation
Ptot
W
TA=25°C,ꢀRTHJA=40°C/W2)
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.6
°C/W -
°C/W -
Thermal resistance, junction - ambient,
6 cm² cooling area2)
-
-
-
-
40
62
Thermal resistance, junction - ambient,
minimal footprint
RthJA
°C/W -
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2022-10-17
StrongIRFETTM2ꢀPower-Transistor
IPB015N06NF2S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
60
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
2.1
2.8
3.3
VDS=VGS,ꢀID=186ꢀµA
-
-
0.5
10
1
100
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
1.2
1.5
1.5
2.1
VGS=10ꢀV,ꢀID=100ꢀA
VGS=6ꢀV,ꢀID=50ꢀA
RDS(on)
mΩ
Gate resistance
Transconductance1)
RG
gfs
-
2.7
-
-
-
Ω
-
125
S
|VDS|≥2|ID|RDS(on)max,ꢀID=100ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
10500 -
pF
pF
pF
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
Output capacitance
2190
75
-
-
Reverse transfer capacitance
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
27
34
65
27
-
-
-
-
ns
ns
ns
ns
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=100ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
46
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=100ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
29
-
28
-
Qsw
45
-
Gate charge total1)
Qg
155
4.4
233
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Vplateau
Qg(sync)
Qoss
-
-
-
144
153
nC
nC
VDS=30ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2022-10-17
StrongIRFETTM2ꢀPower-Transistor
IPB015N06NF2S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
155
780
1.0
-
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.88
38
V
VGS=0ꢀV,ꢀIF=100ꢀA,ꢀTj=25ꢀ°C
VR=30ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=500ꢀA/µs
VR=30ꢀV,ꢀIF=100ꢀA,ꢀdiF/dt=500ꢀA/µs
Reverse recovery time
Reverse recovery charge
ns
nC
Qrr
201
-
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2022-10-17
StrongIRFETTM2ꢀPower-Transistor
IPB015N06NF2S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
280
200
180
160
140
120
100
80
240
200
160
120
80
60
40
40
20
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
single pulse
0.01
0.02
10 µs
0.05
0.1
0.2
0.5
102
101
100
100 µs
1 ms
10 ms
10-1
10-2
10-3
100
DC
10-1
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2022-10-17
StrongIRFETTM2ꢀPower-Transistor
IPB015N06NF2S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
800
3.0
8 V
6 V
2.8
5 V
7 V
700
600
500
400
300
200
100
0
2.6
2.4
2.2
2.0
10 V
5.5 V
5.5 V
6 V
1.8
1.6
1.4
1.2
1.0
5 V
7 V
8 V
10 V
0
1
2
3
4
5
0
50
100
150
200
250
300
350
400
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
800
4.0
700
600
500
400
300
200
100
0
3.6
3.2
2.8
2.4
25 °C
175 °C
175 °C
2.0
1.6
1.2
0.8
25 °C
0
1
2
3
4
5
6
7
3
6
9
12
15
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=100ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2022-10-17
StrongIRFETTM2ꢀPower-Transistor
IPB015N06NF2S
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
3.5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
3.0
2.5
1860 µA
2.0
1.5
1.0
186 µA
-75 -50 -25
0
25 50 75 100 125 150 175 200
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=100ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀTyp.ꢀforwardꢀcharacteristicsꢀofꢀreverseꢀdiode
105
103
25 °C
175 °C
104
103
102
101
Ciss
102
101
100
Coss
Crss
0
10
20
30
40
50
60
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2022-10-17
StrongIRFETTM2ꢀPower-Transistor
IPB015N06NF2S
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
103
10
12 V
30 V
48 V
9
8
7
6
5
4
3
2
1
0
102
25 °C
100 °C
101
150 °C
100
100
101
102
103
0
20
40
60
80
100
120
140
160
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=100ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
65
64
63
62
61
60
59
58
57
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2022-10-17
StrongIRFETTM2ꢀPower-Transistor
IPB015N06NF2S
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TO263-3-U02
MILLIMETERS
DIMENSIONS
MIN.
4.06
0.00
0.51
1.07
0.30
1.14
8.38
6.60
9.65
6.22
MAX.
4.83
0.25
1.00
1.78
0.73
1.65
9.65
7.50
10.67
8.70
A
A1
b
b1
c
c1
D
D1
E
E1
e
2.54
3
N
H
14.60
1.52
15.88
2.60
1.68
1.78
8.00°
L
L1
L2
THETA
1.05
1.35
-9.00°
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-3,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2022-10-17
StrongIRFETTM2ꢀPower-Transistor
IPB015N06NF2S
RevisionꢀHistory
IPB015N06NF2S
Revision:ꢀ2022-10-17,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2022-10-17
Trademarks
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2022-10-17
相关型号：
IPB015N08N5
Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB015N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
INFINEON
IPB016N06L3 G
OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机以及平板电脑充电器中的电源。此外，这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON
IPB016N08NF2S
Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.
INFINEON
IPB017N06N3GATMA1
Power Field-Effect Transistor, 180A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, D2PAK-7
INFINEON
IPB017N08N5
Power Field-Effect Transistor, 120A I(D), 80V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
INFINEON
IPB017N08N5ATMA1
Power Field-Effect Transistor, 120A I(D), 80V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
INFINEON
IPB017N10N5
Power Field-Effect Transistor, 180A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6
INFINEON
IPB017N10N5ATMA1
Power Field-Effect Transistor, 180A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, D2PAK-7/6
INFINEON
IPB017N10N5LF
OptiMOS™线性FET是一种全新方法，实现了增强型MOSFET饱和区域内的导通电阻（R DS（on） ）和线性模式能力的出色平衡。它提供先进的沟槽栅MOSFET R DS（on）以及经典平面MOSFET的宽安全工作区。
INFINEON
IPB017N10N5LFATMA1
Power Field-Effect Transistor, 31A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6
INFINEON
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