IPB017N08N5 [INFINEON]

Power Field-Effect Transistor, 120A I(D), 80V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2;
IPB017N08N5
元器件型号: IPB017N08N5
生产厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用:

Power Field-Effect Transistor, 120A I(D), 80V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

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PDF文件: 总12页 (文件大小:1187K)
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型号参数:IPB017N08N5参数

IPB017N08N5ATMA1

Power Field-Effect Transistor, 120A I(D), 80V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

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0 INFINEON

IPB017N10N5

Power Field-Effect Transistor, 180A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6

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3 INFINEON

IPB017N10N5ATMA1

Power Field-Effect Transistor, 180A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, D2PAK-7/6

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2 INFINEON

IPB017N10N5LFATMA1

Power Field-Effect Transistor, 31A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6

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8 INFINEON

IPB019N06L3G

OptiMOS?3 Power-Transistor

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39 INFINEON

IPB019N08N3G

OptiMOS3 Power-transistor

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121 INFINEON

IPB019N08N3GXT

Power Field-Effect Transistor, 180A I(D), 80V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN

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0 INFINEON

IPB020N04NG

OptiMOS3 Power-Transistor

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77 INFINEON

IPB020N08N5

Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

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1 INFINEON

IPB020N10N5

Power Field-Effect Transistor, 120A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

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3 INFINEON

IPB020N10N5ATMA1

Power Field-Effect Transistor, 120A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2

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0 INFINEON

IPB020N10N5LFATMA1

Power Field-Effect Transistor, 29A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

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1 INFINEON

IPB020NE7N3G

OptiMOSTM3 Power-Transistor

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69 INFINEON

IPB020NE7N3GATMA1

Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

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0 INFINEON

IPB021N04N

Power Field-Effect Transistor, 160A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN

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1 INFINEON