IPB027N10N3 [INFINEON]

3 Power-Transistor;
IPB027N10N3
型号: IPB027N10N3
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

3 Power-Transistor

文件: 总9页 (文件大小:536K)
下载:  下载PDF数据表文档文件

IPB027N10N3G

OptiMOS?3 Power-Transistor

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139 INFINEON

IPB027N10N3GATMA1

3 Power-Transistor

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2 INFINEON

IPB027N10N3GXT

Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

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2 INFINEON

IPB027N10N5

OptiMOSª 5 Power-Transistor, 100 V

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0 INFINEON

IPB027N10N5_16

OptiMOSª 5 Power-Transistor, 100 V

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0 INFINEON

IPB027N10N5ATMA1

Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

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0 INFINEON

IPB029N06N3G

OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.

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68 INFINEON

IPB029N06N3GATMA1

Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

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0 INFINEON

IPB029N06N3GE8187ATMA1

Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

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0 INFINEON

IPB030N08N3G

OptiMOS3 Power-Transistor

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55 INFINEON

IPB030N08N3GATMA1

Power Field-Effect Transistor, 160A I(D), 80V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, D2PAK-7

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0 INFINEON

IPB031NE7N3G

OptiMOSTM3 Power-Transistor

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35 INFINEON

IPB031NE7N3GATMA1

Power Field-Effect Transistor, 100A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

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0 INFINEON

IPB034N03LG

OptiMOS™3 Power-Transistor

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25 INFINEON

IPB034N06L3G

OptiMOS3 Power-Transistor

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75 INFINEON