IPB027N10N3GXT [INFINEON]
Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN;型号: | IPB027N10N3GXT |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN |
文件: | 总9页 (文件大小:215K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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