IPB034N06N3G [INFINEON]
OptiMOS3 Power-Transistor; OptiMOS3功率三极管
| 型号： | IPB034N06N3G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS3 Power-Transistor |
| 文件： | 总9页 (文件大小：677K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB034N06N3 G
"%&$!"#™3 Power-Transistor
Product Summary
Features
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Type
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Package
Marking
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Maximum ratings, 1C T Vꢑ ꢎ ꢒ Sꢋ ꢁ D><5BB ? C85AF9B5 B@53 96954
Value
Parameter
Symbol Conditions
Unit
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I 9
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6
T 8ꢑ ꢇ ꢈ ꢈ Sꢋ
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ꢂꢒ ꢒ ꢀꢀꢀ ꢇ ꢔ ꢒ
ꢒ ꢒ ꢃꢇ ꢔ ꢒ ꢃꢒ ꢍ
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IPB034N06N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R _T@8
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-85A=1< A5B9BC1>3 5ꢁ
%
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%
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%
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A'K
R _T@6
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:D>3 C9? > ꢂ 1=2 95>C
Electrical characteristics, 1C T Vꢑ ꢎ ꢒ Sꢋ ꢁ D><5BB ? C85AF9B5 B@53 96954
Static characteristics
V "7G#9HH
V
V
=Hꢑ ꢈ .ꢁ I 9ꢑ ꢇ =ꢓ
9H4V =Hꢁ I 9ꢑ ꢐ ꢖ V ꢓ
ꢊ A19>ꢂB? DA3 5 2 A51;4? F> E? <C175
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.(
*
%
%
J
V =H"_T#
+
,
V
9Hꢑ ꢍ ꢈ .ꢁ V =Hꢑ ꢈ .ꢁ
I 9HH
05A? 71C5 E? <C175 4A19> 3 DAA5>C
%
%
(&)
)(
)
r6
T Vꢑ ꢎ ꢒ Sꢋ
V
9Hꢑ ꢍ ꢈ .ꢁ V =Hꢑ ꢈ .ꢁ
)((
T Vꢑ ꢇ ꢎ ꢒ Sꢋ
I =HH
V
V
=Hꢑ ꢎ ꢈ .ꢁ V 9Hꢑ ꢈ .
=Hꢑ ꢇ ꢈ .ꢁ I 9ꢑ ꢇ ꢈ ꢈ ꢓ
!1C5ꢂB? DA3 5 <51;175 3 DAA5>C
ꢊ A19>ꢂB? DA3 5 ? >ꢂBC1C5 A5B9BC1>3 5
!1C5 A5B9BC1>3 5
%
%
%
)
)(( Z6
R 9H"[Z#
R =
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IPB034N06N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
#>@DC 3 1@13 9C1>3 5
( DC@DC 3 1@13 9C1>3 5
+ 5E5AB5 CA1>B65A 3 1@13 9C1>3 5
-DA>ꢂ? > 45<1H C9=5
+ 9B5 C9=5
C U^^
%
%
%
%
%
%
%
0(((
)/((
-0
))((( \<
V
=Hꢑ ꢈ .ꢁ V 9Hꢑ ꢖ ꢈ .ꢁ
C [^^
C ]^^
t P"[Z#
t ]
*+((
%
f ꢑ ꢇ & " I
+0
%
%
%
%
Z^
).)
.+
V
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I 9ꢑ ꢐ ꢈ ꢓ ꢁ R =ꢑ ꢖ ꢀꢎ "
t P"[RR#
t R
-DA>ꢂ? 66 45<1H C9=5
1<< C9=5
).
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!1C5 C? 4A19> 3 81A75
,F9C3 89>7 3 81A75
Q S^
%
%
%
%
%
%
,+
1
%
Z8
Q SP
%
V
V
99ꢑ ꢖ ꢈ .ꢁ I 9ꢑ ꢇ ꢈ ꢈ ꢓ ꢁ
=Hꢑ ꢈ C? ꢇ ꢈ .
Q ^b
Q S
*0
10
-&,
/1
%
)+(
%
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V \XM_QM`
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J
V
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)(- Z8
Reverse Diode
I H
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ꢊ 9? 45 @D<B5 3 DAA5>C
%
%
%
%
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6
J
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V
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V H9
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%
(&1
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T Vꢑ ꢎ ꢒ Sꢋ
t ]]
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%
%
,0
/+
%
%
Z^
V Gꢑ ꢖ ꢈ .ꢁ #<ꢑ ꢕ ꢈ ꢓ ꢁ
Pi <'Pt ꢑ ꢇ ꢈ ꢈ ꢓ ꢃV B
Q ]]
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Z8
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ꢎ ꢈ ꢈ ꢐ ꢂꢇ ꢎ ꢂꢇ ꢍ
IPB034N06N3 G
1 Power dissipation
2 Drain current
P
_[_4R"T 8#
I 94R"T 8ꢆꢌ V =H"ꢇ ꢈ .
200
120
100
80
60
40
20
0
160
120
80
40
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I 94R"V 9Hꢆꢌ T 8ꢑ ꢎ ꢒ Sꢋ ꢌ D 4(
@1A1=5C5Aꢘ t \
4 Max. transient thermal impedance
_T@84R"t \#
Z
@1A1=5C5Aꢘ D 4t \'T
103
1
<9=9C54 2 H ? >ꢂBC1C5
ꢇ V B
]Q^U^_MZOQ
(&-
(&*
ꢇ ꢈ V B
102
101
100
10-1
ꢇ ꢈ ꢈ V B
ꢇ =B
ꢇ ꢈ =B
98
(&)
0.1
(&(-
(&(*
(&()
B9>7<5 @D<B5
0.01
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
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@175 ꢏ
ꢎ ꢈ ꢈ ꢐ ꢂꢇ ꢎ ꢂꢇ ꢍ
IPB034N06N3 G
5 Typ. output characteristics
I 94R"V 9Hꢆꢌ T Vꢑ ꢎ ꢒ Sꢋ
6 Typ. drain-source on resistance
9H"[Z#4R"I 9ꢆꢌ T Vꢑ ꢎ ꢒ Sꢋ
R
@1A1=5C5Aꢘ V =H
@1A1=5C5Aꢘ V =H
320
ꢕ .
ꢇ ꢈ .
15
ꢒ .
ꢏ ꢀꢒ .
ꢍ ꢀꢒ .
ꢒ ꢀꢒ .
ꢔ .
12
9
240
160
80
ꢍ .
6
ꢒ ꢀꢒ .
ꢍ .
ꢍ ꢀꢒ .
ꢔ .
ꢕ .
3
ꢒ .
ꢇ ꢈ .
ꢏ ꢀꢒ .
0
0
0
0
1
2
3
4
5
50
100
150
V DS [V]
I D [A]
7 Typ. transfer characteristics
I 94R"V =Hꢆꢌ JV 9Hf5*fI 9fR 9H"[Z#YMc
@1A1=5C5Aꢘ T V
8 Typ. forward transconductance
g R^4R"I 9ꢆꢌ T Vꢑ ꢎ ꢒ Sꢋ
320
240
160
200
160
120
80
80
40
ꢇ ꢔ ꢒ Sꢋ
ꢎ ꢒ Sꢋ
0
0
0
2
4
6
8
0
50
100
150
V GS [V]
I D [A]
+ 5Eꢀ ꢎ ꢀꢒ
@175 ꢒ
ꢎ ꢈ ꢈ ꢐ ꢂꢇ ꢎ ꢂꢇ ꢍ
IPB034N06N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
=H"_T#4R"T Vꢆꢌ V =H4V 9H
R
9H"[Z#4R"T Vꢆꢌ I 9ꢑ ꢇ ꢈ ꢈ ꢓ ꢌ V =Hꢑ ꢇ ꢈ .
V
@1A1=5C5Aꢘ I 9
7
6
5
4
3.5
3
ꢐ ꢖ ꢈ V ꢓ
ꢐ ꢖ V ꢓ
2.5
2
YMc
4
_d\
3
1.5
1
2
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I <4R"V H9
C 4R"V 9Hꢆꢌ V =Hꢑ ꢈ .ꢌ f ꢑ ꢇ & " I
#
@1A1=5C5Aꢘ T V
104
103
8U^^
ꢇ ꢔ ꢒ Sꢋ ꢁ ꢐ ꢕ ꢉ
ꢎ ꢒ Sꢋ
8[^^
ꢇ ꢔ ꢒ Sꢋ
103
102
101
102
ꢎ ꢒ Sꢋ ꢁ ꢐ ꢕ ꢉ
101
8]^^
100
0
0
20
40
60
0.5
1
1.5
2
V DS [V]
V SD [V]
+ 5Eꢀ ꢎ ꢀꢒ
@175 ꢍ
ꢎ ꢈ ꢈ ꢐ ꢂꢇ ꢎ ꢂꢇ ꢍ
IPB034N06N3 G
13 Avalanche characteristics
6H4R"t 6Jꢆꢌ R =Hꢑ ꢎ ꢒ "
14 Typ. gate charge
=H4R"Q SM_Qꢆꢌ I 9ꢑ ꢇ ꢈ ꢈ ꢓ @D<B54
V
I
@1A1=5C5Aꢘ T V"^_M]_#
@1A1=5C5Aꢘ V 99
1000
12
ꢖ ꢈ .
10
8
ꢇ ꢎ .
ꢏ ꢕ .
100
ꢎ ꢒ Sꢋ
6
ꢇ ꢈ ꢈ Sꢋ
ꢇ ꢒ ꢈ Sꢋ
10
4
2
1
1
0
0
10
100
1000
20
40
60
80
100
t AV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
7G"9HH#4R"T Vꢆꢌ I 9ꢑ ꢇ =ꢓ
70
V =H
Q g
65
60
55
50
V S ^"_T#
Q S"_T#
Q ^b
Q SP
Q gate
Q S^
-60
-20
20
60
100
140
180
T j [°C]
+ 5Eꢀ ꢎ ꢀꢒ
@175 ꢔ
ꢎ ꢈ ꢈ ꢐ ꢂꢇ ꢎ ꢂꢇ ꢍ
IPB034N06N3 G
PG-TO263-7 (D²-Pak 7pin)
+ 5Eꢀ ꢎ ꢀꢒ
@175 ꢕ
ꢎ ꢈ ꢈ ꢐ ꢂꢇ ꢎ ꢂꢇ ꢍ
IPB034N06N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
+ 5Eꢀ ꢎ ꢀꢒ
@175 ꢐ
ꢎ ꢈ ꢈ ꢐ ꢂꢇ ꢎ ꢂꢇ ꢍ
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