IPB036N12N3 G [INFINEON]

120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能，适用于各种应用，支持实现卓越性能。120V OptiMOS™ 技术带来全新可能性，帮助实现优化解决方案。;


型号：	IPB036N12N3 G
厂家：	Infineon
描述：	120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能，适用于各种应用，支持实现卓越性能。120V OptiMOS™ 技术带来全新可能性，帮助实现优化解决方案。开关
文件：	总9页 (文件大小：633K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IPB036N12N3 G

"%&$!"#^™3 Power-Transistor

Product Summary

Features

V _9H

)*(

+&.

Q #451< 6? B 8978 6B5AE5>3 I CG9D3 89>7 1>4 ꢀ ꢁ ꢂꢀ ꢁ 3 ? >F5BD5BC

Q ꢃ H3 5<<5>D 71D5 3 81B75 H R _9H"[Z#@B? 4E3 D ꢄ ( & ꢅ

Q .5BI <? G ? >ꢆB5C9CD1>3 5 + _9H"[Z#

R _9H"[Z#$YMd

I ₉

)0(

Q ' ꢆ3 81>>5<ꢇ >? B=1< <5F5<

Q ꢈ ꢉ ꢉ ꢊ 1F1<1>3 85 D5CD54

Q )2 ꢆ6B55 @<1D9>7ꢋ + ? " , 3 ? =@<91>D

Q * E1<96954 13 3 ? B49>7 D? $ ꢃ ꢀ ꢃ ꢁ ^)#6? B D1B75D 1@@<93 1D9? >C

Q " 1<? 75>ꢆ6B55 13 3 ? B49>7 D? #ꢃ ꢁ ꢌ ꢈ ꢍ ꢎ ꢏ ꢆꢍ ꢆꢍ ꢈ

Type

#)ꢗ ꢉ ꢖ ꢌ ' ꢈ ꢍ ' ꢖ !

Package

Marking

E=%ID*.+%/

(+.C)*C

Maximum ratings, 1D T _Vꢐ ꢍ ꢑ Tꢁ ꢇ E><5CC ? D85BG9C5 C@53 96954

Value

Parameter

Symbol Conditions

Unit

T ₈ꢐ ꢍ ꢑ Tꢁ ^*#

I ₉

ꢁ ? >D9>E? EC 4B19> 3 EBB5>D

)0(

)+1

T ₈ꢐ ꢈ ꢉ ꢉ Tꢁ

)E<C54 4B19> 3 EBB5>D^*#

I _{9$\aX_Q}

E _6H

T ₈ꢐ ꢍ ꢑ Tꢁ

I ₉ꢐ ꢈ ꢉ ꢉ ꢒ ꢇ R _=Hꢐ ꢍ ꢑ "

/*(

ꢒ F1<1>3 85 5>5B7Iꢇ C9>7<5 @E<C5^+#

!1D5 C? EB3 5 F? <D175

1((

V _=H

q*(

P _`[`

T ₈ꢐ ꢍ ꢑ Tꢁ

)? G5B 49CC9@1D9? >

+((

Tꢁ

T _Vꢇ T _{_`S}

( @5B1D9>7 1>4 CD? B175 D5=@5B1DEB5

#ꢃ ꢁ 3 <9=1D93 3 1D57? BIꢋ ꢀ #' #ꢃ ꢁ ꢌ ꢕ ꢆꢈ

ꢆꢑ ꢑ ꢓꢓꢓ ꢈ ꢔ ꢑ

ꢑ ꢑ ꢂꢈ ꢔ ꢑ ꢂꢑ ꢌ

^)#$ ꢆ,-ꢀ ꢍ ꢉ 1>4 $ ꢃ ,ꢀ ꢍ ꢍ

^*#,55 697EB5 ꢖ 6? B =? B5 45D19<54 9>6? B=1D9? >

^+#,55 697EB5 ꢈ ꢖ 6? B =? B5 45D19<54 9>6? B=1D9? Z

+ 5Fꢓ ꢍ ꢓꢍ

@175 ꢈ

ꢍ ꢉ ꢉ ꢏ ꢆꢈ ꢍ ꢆꢈ ꢔ

IPB036N12N3 G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

R _`T@8

-85B=1< B5C9CD1>3 5ꢇ :E>3 D9? > ꢆ 3 1C5

-85B=1< B5C9CD1>3 5ꢇ

ꢆ

(&-

ꢌ ꢍ

A'K

R _`T@6

=9>9=1< 6? ? D@B9>D

ꢌ 3 =^*3 ? ? <9>7 1B51^,#

:E>3 D9? > ꢆ 1=2 95>D

Electrical characteristics, 1D T _Vꢐ ꢍ ꢑ Tꢁ ꢇ E><5CC ? D85BG9C5 C@53 96954

Static characteristics

V _"7G#9HH

V _=H"`T#

_=Hꢐ ꢉ .ꢇ I ₉ꢐ ꢈ =ꢒ

ꢀ B19>ꢆC? EB3 5 2 B51;4? G> F? <D175

!1D5 D8B5C8? <4 F? <D175

)*(

_9H4V _=Hꢇ I ₉ꢐ ꢍ ꢔ ꢉ V ꢒ

_9Hꢐ ꢈ ꢉ ꢉ .ꢇ V _=Hꢐ ꢉ .ꢇ

I _9HH

05B? 71D5 F? <D175 4B19> 3 EBB5>D

(&)

)(

)

T _Vꢐ ꢍ ꢑ Tꢁ

_9Hꢐ ꢈ ꢉ ꢉ .ꢇ V _=Hꢐ ꢉ .ꢇ

)((

T _Vꢐ ꢈ ꢍ ꢑ Tꢁ

I _=HH

_=Hꢐ ꢍ ꢉ .ꢇ V _9Hꢐ ꢉ .

_=Hꢐ ꢈ ꢉ .ꢇ I ₉ꢐ ꢈ ꢉ ꢉ ꢒ

!1D5ꢆC? EB3 5 <51;175 3 EBB5>D

ꢀ B19>ꢆC? EB3 5 ? >ꢆCD1D5 B5C9CD1>3 5

!1D5 B5C9CD1>3 5

)

)(( Z6

R _9H"[Z#

R ₌

*&1

)&,

+&.

gV _9Hg5*gI ₉gR _9H"[Z#YMdꢇ

I ₉ꢐ ꢈ ꢉ ꢉ ꢒ

g _{R_}

I^MZ_O[ZPaO`MZOQ

)1-

^,#ꢀ 5F93 5 ? > ꢎ ꢉ == H ꢎ ꢉ == H ꢈ ꢓꢑ == 5@? HI )ꢁ ꢗ + ꢎ G9D8 ꢌ 3 = ꢄ? >5 <1I5Bꢇ ꢔ ꢉ V = D893 ;ꢅ 3 ? @@5B 1B51 6? B 4B19>

3 ? >>53 D9? >ꢓ )ꢁ ꢗ 9C F5BD93 1< 9> CD9<< 19Bꢓ

+ 5Fꢓ ꢍ ꢓꢍ

@175 ꢍ

ꢍ ꢉ ꢉ ꢏ ꢆꢈ ꢍ ꢆꢈ ꢔ

IPB036N12N3 G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

#>@ED 3 1@13 9D1>3 5

( ED@ED 3 1@13 9D1>3 5

+ 5F5BC5 DB1>C65B 3 1@13 9D1>3 5

-EB>ꢆ? > 45<1I D9=5

+ 9C5 D9=5

C _{U__}

)(,((

)+*(

)+0(( \<

_=Hꢐ ꢉ .ꢇ V _9Hꢐ ꢌ ꢉ .ꢇ

C _{[__}

C _{^__}

t _P"[Z#

t _^

)/.(

f ꢐ ꢈ & " J

₉₉ꢐ ꢌ ꢉ .ꢇ V _=Hꢐ ꢈ ꢉ .ꢇ

I ₉ꢐ ꢈ ꢉ ꢉ ꢒ ꢇ R ₌ꢐ ꢈ ꢓꢌ "

t _P"[RR#

t _R

-EB>ꢆ? 66 45<1I D9=5

1<< D9=5

!1D5 ꢁ 81BS5 ꢁ 81B13 D5B9CD93 C^-#

!1D5 D? C? EB3 5 3 81B75

!1D5 D? 4B19> 3 81B75

,G9D3 89>7 3 81B75

Q _{S_}

Q _SP

₉₉ꢐ ꢌ ꢉ .ꢇ I ₉ꢐ ꢈ ꢉ ꢉ ꢒ ꢇ

_=Hꢐ ꢉ D? ꢈ ꢉ .

Q _{_c}

Q _S

*))

!1D5 3 81B75 D? D1<

)-0

-&(

)0*

V _\XM`QMa

Q _{[__}

!1D5 @<1D51E F? <D175

( ED@ED 3 81B75

₉₉ꢐ ꢌ ꢉ .ꢇ V _=Hꢐ ꢉ .

*,* Z8

Reverse Diode

I _H

ꢀ 9? 45 3 ? >D9>? EC 6? BG1B4 3 EBB5>D

ꢀ 9? 45 @E<C5 3 EBB5>D

)0(

/*(

T ₈ꢐ ꢍ ꢑ Tꢁ

I _{H$\aX_Q}

_=Hꢐ ꢉ .ꢇ I _<ꢐ ꢈ ꢉ ꢉ ꢒ ꢇ

V _H9

ꢀ 9? 45 6? BG1B4 F? <D175

(&1

)&*

T _Vꢐ ꢍ ꢑ Tꢁ

t _^^

+ 5F5BC5 B53 ? F5BI D9=5

)*+

+-.

V _Gꢐ ꢖ ꢔ ꢓꢑ .ꢇ I _<4I _Hꢇ

Pi _<'Pt ꢐ ꢈ ꢉ ꢉ ꢒ ꢂV C

Q _^^

+ 5F5BC5 B53 ? F5BI 3 81B75

^-#,55 697EB5 ꢈ ꢌ 6? B 71D5 3 81B75 @1B1=5D5B 4569>9D9? >

+ 5Fꢓ ꢍ ꢓꢍ

@175 ꢖ

ꢍ ꢉ ꢉ ꢏ ꢆꢈ ꢍ ꢆꢈ ꢔ

IPB036N12N3 G

1 Power dissipation

2 Drain current

_`[`4R"T ₈#

I ₉4R"T ₈ꢅꢋ V _=H"ꢈ ꢉ .

350

300

250

200

150

100

200

180

160

140

120

100

150

200

100

150

200

T _C[°C]

3 Safe operating area

I ₉4R"V _9Hꢅꢋ T ₈ꢐ ꢍ ꢑ Tꢁ ꢋ D 4(

@1B1=5D5Bꢘ t _\

4 Max. transient thermal impedance

_`T@84R"t _\#

@1B1=5D5Bꢘ D 4t _\'T

10³

10⁰

<9=9D54 2 I ? >ꢆCD1D5

^Q_U_`MZOQ

ꢈ V C

ꢈ ꢉ V C

ꢈ ꢉ ꢉ V C

(&-

10²

10¹

10⁰

ꢈ =C

(&*

10^-1

(&)

ꢈ ꢉ =C

(&(-

(&(*

(&()

C9>7<5 @E<C5

10^-2

10^-1

10⁰

10¹

V _DS[V]

10²

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

t _p[s]

+ 5Fꢓ ꢍ ꢓꢍ

@175 ꢎ

ꢍ ꢉ ꢉ ꢏ ꢆꢈ ꢍ ꢆꢈ ꢔ

IPB036N12N3 G

5 Typ. output characteristics

I ₉4R"V _9Hꢅꢋ T _Vꢐ ꢍ ꢑ Tꢁ

6 Typ. drain-source on resistance

_9H"[Z#4R"I ₉ꢅꢋ T _Vꢐ ꢍ ꢑ Tꢁ

@1B1=5D5Bꢘ V _=H

400

ꢈ ꢉ .

ꢑ .

350

ꢔ .

ꢌ .

ꢑ ꢓꢑ .

ꢌ .

300

250

200

150

100

ꢔ .

ꢈ ꢉ .

ꢑ ꢓꢑ .

ꢑ .

ꢎ ꢓꢑ .

100

200

300

400

V _DS[V]

I _D[A]

7 Typ. transfer characteristics

I ₉4R"V _=Hꢅꢋ KV _9Hg5*gI ₉gR _9H"[Z#YMd

@1B1=5D5Bꢘ T _V

8 Typ. forward transconductance

g _{R_}4R"I ₉ꢅꢋ T _Vꢐ ꢍ ꢑ Tꢁ

400

350

300

250

200

150

100

250

200

150

100

ꢈ ꢔ ꢑ Tꢁ

ꢍ ꢑ Tꢁ

120

160

200

V _GS[V]

I _D[A]

+ 5Fꢓ ꢍ ꢓꢍ

@175 ꢑ

ꢍ ꢉ ꢉ ꢏ ꢆꢈ ꢍ ꢆꢈ ꢔ

IPB036N12N3 G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

_=H"`T#4R"T _Vꢅꢋ V _=H4V _9H

_9H"[Z#4R"T _Vꢅꢋ I ₉ꢐ ꢈ ꢉ ꢉ ꢒ ꢋ V _=Hꢐ ꢈ ꢉ .

@1B1=5D5Bꢘ I ₉

3.5

ꢍ ꢔ ꢉ ꢉ V ꢒ

ꢍ ꢔ ꢉ V ꢒ

2.5

YMd

`e\

1.5

0.5

-60

-20

100

140

180

-60

-20

T _j[°C]

100

140

180

T _j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _<4R"V _H9

C 4R"V _9Hꢅꢋ V _=Hꢐ ꢉ .ꢋ f ꢐ ꢈ & " J

@1B1=5D5Bꢘ T _V

10⁵

10³

8U__

ꢈ ꢔ ꢑ Tꢁ ꢇ =1H

10⁴

10³

10²

10¹

ꢍ ꢑ Tꢁ

10²

ꢈ ꢔ ꢑ Tꢁ

8[__

ꢍ ꢑ Tꢁ ꢇ =1H

10¹

8^__

10⁰

0.5

1.5

V _DS[V]

V _SD[V]

+ 5Fꢓ ꢍ ꢓꢍ

@175 ꢌ

ꢍ ꢉ ꢉ ꢏ ꢆꢈ ꢍ ꢆꢈ ꢔ

IPB036N12N3 G

13 Avalanche characteristics

_6H4R"t _6Jꢅꢋ R _=Hꢐ ꢍ ꢑ "

14 Typ. gate charge

_=H4R"Q _SM`Qꢅꢋ I ₉ꢐ ꢈ ꢉ ꢉ ꢒ @E<C54

@1B1=5D5Bꢘ T _{V"_`M^`#}

@1B1=5D5Bꢘ V ₉₉

10³

ꢌ ꢉ .

ꢎ ꢉ .

10²

ꢍ ꢉ .

ꢍ ꢑ Tꢁ

ꢈ ꢉ ꢉ Tꢁ

ꢈ ꢑ ꢉ Tꢁ

10¹

10⁰

10¹

10²

t _AV[µs]

10³

10⁴

Q _gate[nC]

120

160

15 Drain-source breakdown voltage

16 Gate charge waveforms

_7G"9HH#4R"T _Vꢅꢋ I ₉ꢐ ꢈ =ꢒ

135

V _=H

Q _g

130

125

120

115

110

V _{S _"`T#}

Q _S"`T#

Q _{_c}

Q _SP

Q _gate

Q _{S_}

-60

-20

100

140

180

T _j[°C]

+ 5Fꢓ ꢍ ꢓꢍ

@175 ꢔ

ꢍ ꢉ ꢉ ꢏ ꢆꢈ ꢍ ꢆꢈ ꢔ

IPB036N12N3 G

PG-TO263-7

+ 5Fꢓ ꢍ ꢓꢍ

@175 ꢕ

ꢍ ꢉ ꢉ ꢏ ꢆꢈ ꢍ ꢆꢈ ꢔ

IPB036N12N3 G

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

+ 5Fꢓ ꢍ ꢓꢍ

@175 ꢏ

ꢍ ꢉ ꢉ ꢏ ꢆꢈ ꢍ ꢆꢈ ꢔ

IPB036N12N3 G [INFINEON]

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