IPB039N10N3 G [INFINEON]
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。;
| 型号： | IPB039N10N3 G |
| 厂家： | 
Infineon |
| 描述： | 英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。 |
| 文件： | 总9页 (文件大小：666K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB039N10N3 G
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Product Summary
Features
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Package
Marking
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Value
Parameter
Symbol Conditions
Unit
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IPB039N10N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
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Static characteristics
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%
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IPB039N10N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
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( DC@DC 3 1@13 9C1>3 5
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%
%
%
%
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%
%
%
%
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t P"[RR#
t R
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Reverse Diode
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IPB039N10N3 G
1 Power dissipation
2 Drain current
P
_[_4R"T 8#
I 94R"T 8ꢄꢉ V =H"ꢅ ꢐ .
250
180
160
140
120
100
80
200
150
100
50
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I 94R"V 9Hꢄꢉ T 8ꢏ ꢌ ꢇ Sꢈ ꢉ D 4(
@1A1=5C5Aꢗ t \
4 Max. transient thermal impedance
_T@84R"t \#
Z
@1A1=5C5Aꢗ D 4t \'T
103
100
<9=9C54 2 H ? >ꢀBC1C5
]Q^U^_MZOQ
ꢅ U B
ꢅ ꢐ U B
ꢅ ꢐ ꢐ U B
(&-
102
101
100
10-1
ꢅ =B
(&*
10-1
(&)
ꢅ ꢐ =B
(&(-
(&(*
98
(&()
B9>7<5 @D<B5
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
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IPB039N10N3 G
5 Typ. output characteristics
I 94R"V 9Hꢄꢉ T Vꢏ ꢌ ꢇ Sꢈ
6 Typ. drain-source on resistance
9H"[Z#4R"I 9ꢄꢉ T Vꢏ ꢌ ꢇ Sꢈ
R
@1A1=5C5Aꢗ V =H
@1A1=5C5Aꢗ V =H
250
8
ꢍ ꢒꢇ .
7
6
5
4
3
2
1
0
ꢅ ꢐ .
ꢋ .
ꢇ .
200
ꢆ ꢒꢇ .
ꢇ ꢒꢇ .
150
100
50
ꢇ .
ꢋ .
ꢆ ꢒꢇ .
ꢅ ꢐ .
ꢍ ꢒꢇ .
0
0
1
2
0
40
80
120
160
200
240
V DS [V]
I D [A]
7 Typ. transfer characteristics
I 94R"V =Hꢄꢉ JV 9Hf5*fI 9fR 9H"[Z#YMc
@1A1=5C5Aꢗ T V
8 Typ. forward transconductance
g R^4R"I 9ꢄꢉ T Vꢏ ꢌ ꢇ Sꢈ
250
200
150
100
50
240
200
160
120
80
40
ꢌ ꢇ Sꢈ
ꢅ ꢆ ꢇ Sꢈ
0
0
0
2
4
6
0
40
80
120
160
200
V GS [V]
I D [A]
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IPB039N10N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
=H"_T#4R"T Vꢄꢉ V =H4V 9H
R
9H"[Z#4R"T Vꢄꢉ I 9ꢏ ꢅ ꢐ ꢐ ꢑ ꢉ V =Hꢏ ꢅ ꢐ .
V
@1A1=5C5Aꢗ I 9
9
8
7
6
4
3.5
3
ꢅ ꢋ ꢐ ꢐ U ꢑ
2.5
2
ꢅ ꢋ ꢐ U ꢑ
5
ꢎ ꢓ ꢘ
_d\
4
3
2
1
0
1.5
1
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I <4R"V H9
C 4R"V 9Hꢄꢉ V =Hꢏ ꢐ .ꢉ f ꢏ ꢅ & " I
#
@1A1=5C5Aꢗ T V
104
103
8U^^
ꢅ ꢆ ꢇ Sꢈ ꢁ ꢎ ꢓ ꢘ
8[^^
ꢌ ꢇ Sꢈ
103
102
101
102
ꢅ ꢆ ꢇ Sꢈ
101
8]^^
ꢌ ꢇ Sꢈ ꢁ ꢎ ꢓ ꢘ
100
0
0
20
40
V DS [V]
60
80
0.5
1
1.5
2
V SD [V]
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IPB039N10N3 G
13 Avalanche characteristics
6H4R"t 6Jꢄꢉ R =Hꢏ ꢌ ꢇ "
14 Typ. gate charge
=H4R"Q SM_Qꢄꢉ I 9ꢏ ꢅ ꢐ ꢐ ꢑ @D<B54
V
I
@1A1=5C5Aꢗ T V"^_M]_#
@1A1=5C5Aꢗ V 99
1000
10
ꢓ ꢐ .
8
6
4
2
100
ꢇ ꢐ .
ꢌ ꢇ Sꢈ
ꢌ ꢐ .
ꢅ ꢐ ꢐ Sꢈ
ꢅ ꢇ ꢐ Sꢈ
10
1
1
0
0
10
100
1000
20
40
60
80
100
t AV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
7G"9HH#4R"T Vꢄꢉ I 9ꢏ ꢅ =ꢑ
110
V =H
Q g
105
100
95
V S ^"_T#
Q S"_T#
Q ^b
Q SP
Q gate
Q S^
90
-60
-20
20
60
100
140
180
T j [°C]
+ 5Eꢒꢌ ꢒꢐ ꢕ
@175 ꢆ
ꢌ ꢐ ꢐ ꢎ ꢀꢅ ꢌ ꢀꢅ ꢆ
IPB039N10N3 G
PG-TO263-3: Outline
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IPB039N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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