首页 |元器件品牌

IPB040N08NF2S [INFINEON]

Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 4 mOhm, addressing a broad range of applications from low- to high-switching frequency.;
IPB040N08NF2S
型号： IPB040N08NF2S
厂家： Infineon    Infineon
描述：

Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 4 mOhm, addressing a broad range of applications from low- to high-switching frequency.
文件： 总11页 (文件大小：1155K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
IPB040N08NF2S  
MOSFET  
StrongIRFETTMꢀ2ꢀPower-Transistor  
D²PAK  
Features  
tab  
•ꢀOptimizedꢀforꢀaꢀwideꢀrangeꢀofꢀapplications  
•ꢀN-Channel,ꢀnormalꢀlevel  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
2
1
3
Productꢀvalidation  
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard  
Drain  
Pin 2, Tab  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
Gate  
Pin 1  
VDS  
80  
V
RDS(on),max  
ID  
4.0  
107  
65  
mΩ  
A
Source  
Pin 3  
Qoss  
nC  
nC  
QG  
54  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPB040N08NF2S  
PG-TO263-3  
040N08NS  
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2022-09-23  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPB040N08NF2S  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2022-09-23  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPB040N08NF2S  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
-
-
107  
82  
82  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
Continuous drain current1)  
ID  
A
VGS=6ꢀV,ꢀTC=100ꢀ°C  
22  
VGS=10V,TA=25°C,RthJA=40°C/W2)  
Pulsed drain current3)  
Avalanche energy, single pulse4)  
ID,pulse  
EAS  
-
-
-
-
428  
119  
20  
A
TA=25ꢀ°C  
-
mJ  
V
ID=95ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
-
-
-
-
-
150  
3.8  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=40ꢀ°C/W2)  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
1.0  
°C/W -  
°C/W -  
Thermal resistance, junction - ambient,  
6 cm² cooling area2)  
-
-
-
-
40  
62  
Thermal resistance, junction - ambient,  
minimal footprint  
RthJA  
°C/W -  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2022-09-23  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPB040N08NF2S  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
80  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
VDS=VGS,ꢀID=85ꢀµA  
2.2  
3.0  
3.8  
-
-
0.1  
10  
1
100  
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
3.5  
4.5  
4.0  
5.6  
VGS=10ꢀV,ꢀID=80ꢀA  
VGS=6ꢀV,ꢀID=40ꢀA  
RDS(on)  
mΩ  
Gate resistance  
Transconductance1)  
RG  
gfs  
-
1.9  
-
-
-
Ω
-
62  
S
|VDS|≥2|ID|RDS(on)max,ꢀID=80ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
3800  
620  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
-
-
-
pF  
pF  
pF  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
Reverse transfer capacitance  
29  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=80ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
14  
54  
28  
13  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=80ꢀA,  
RG,ext=1.6ꢀΩ  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=80ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=80ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
19  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=40ꢀV,ꢀID=80ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=80ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=80ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=80ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=80ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=80ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV  
Qg(th)  
Qgd  
12  
-
12  
-
Qsw  
19  
-
Gate charge total1)  
Qg  
54  
81  
-
Gate plateau voltage  
Gate charge total, sync. FET  
Output charge  
Vplateau  
Qg(sync)  
Qoss  
4.9  
47  
-
nC  
nC  
65  
-
VDS=40ꢀV,ꢀVGS=0ꢀV  
1) Defined by design. Not subject to production test.  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2022-09-23  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPB040N08NF2S  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
88  
428  
1.2  
-
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.95  
33  
V
VGS=0ꢀV,ꢀIF=80ꢀA,ꢀTj=25ꢀ°C  
VR=40ꢀV,ꢀIF=80ꢀA,ꢀdiF/dt=500ꢀA/µs  
VR=40ꢀV,ꢀIF=80ꢀA,ꢀdiF/dt=500ꢀA/µs  
Reverse recovery time  
Reverse recovery charge  
ns  
nC  
Qrr  
189  
-
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2022-09-23  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPB040N08NF2S  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
160  
120  
140  
120  
100  
80  
100  
80  
60  
40  
20  
0
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75  
100  
125  
150  
175  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
101  
1 µs  
single pulse  
0.01  
0.02  
10 µs  
0.05  
0.1  
0.2  
0.5  
102  
101  
100  
100 µs  
1 ms  
10 ms  
10-1  
10-2  
10-3  
100  
10-1  
DC  
10-2  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2022-09-23  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPB040N08NF2S  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
500  
12  
8 V  
10 V  
7 V  
10  
400  
300  
200  
100  
0
4.5 V  
5 V  
8
6
4
2
0
6 V  
8 V  
6 V  
7 V  
10 V  
5 V  
4.5 V  
0
1
2
3
4
5
0
40  
80  
120  
160  
200  
240  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
500  
12  
10  
8
400  
300  
200  
100  
0
175 °C  
25 °C  
6
25 °C  
175 °C  
4
2
0
0
1
2
3
4
5
6
7
0
3
6
9
12  
15  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=80ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2022-09-23  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPB040N08NF2S  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.0  
4.0  
3.5  
3.0  
2.5  
1.6  
1.2  
0.8  
0.4  
0.0  
850 µA  
2.0  
1.5  
1.0  
0.5  
0.0  
85 µA  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=80ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀTyp.ꢀforwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
175 °C  
Ciss  
103  
102  
101  
102  
101  
100  
Coss  
Crss  
70  
0
10  
20  
30  
40  
50  
60  
80  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
1.75  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2022-09-23  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPB040N08NF2S  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
103  
10  
16 V  
40 V  
64 V  
8
6
4
2
0
102  
25 °C  
101  
100 °C  
150 °C  
100  
10-1  
10-1  
100  
101  
102  
103  
0
10  
20  
30  
40  
50  
60  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=80ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
88  
86  
84  
82  
80  
78  
76  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2022-09-23  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPB040N08NF2S  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
PACKAGE - GROUP  
NUMBER:  
PG-TO263-3-U02  
MILLIMETERS  
DIMENSIONS  
MIN.  
4.06  
0.00  
0.51  
1.07  
0.30  
1.14  
8.38  
6.60  
9.65  
6.22  
MAX.  
4.83  
0.25  
1.00  
1.78  
0.73  
1.65  
9.65  
7.50  
10.67  
8.70  
A
A1  
b
b1  
c
c1  
D
D1  
E
E1  
e
2.54  
3
N
H
14.60  
1.52  
15.88  
2.60  
1.68  
1.78  
8.00°  
L
L1  
L2  
THETA  
1.05  
1.35  
-9.00°  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-3,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2022-09-23  
StrongIRFETTMꢀ2ꢀPower-Transistor  
IPB040N08NF2S  
RevisionꢀHistory  
IPB040N08NF2S  
Revision:ꢀ2022-09-23,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2022-09-23  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2022ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2022-09-23  

相关型号：

SI9130DB

 5- and 3.3-V Step-Down Synchronous Converters

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1-E3

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135_11

 SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9136_11

 Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130CG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130LG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130_11

 Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明