IPB044N15N5 [INFINEON]
英飞凌推出的 OptiMOS™5 150 V 功率 MOSFET 特别适合叉车和电动脚踏车等低压驱动器以及通信和太阳能应用。新产品突破性地降低了 R DS(on)(与 SuperSO8 中的下一个理想替代品相比高达 25%)和 Q rr,而不影响 FOM gd 和 FOM OSS,从而在优化系统效率的同时有效减少设计工作量。此外,超低反向恢复电荷(在 SuperSO8 中,Q rr = 26 nC)提高了换流坚固性。;型号: | IPB044N15N5 |
厂家: | Infineon |
描述: | 英飞凌推出的 OptiMOS™5 150 V 功率 MOSFET 特别适合叉车和电动脚踏车等低压驱动器以及通信和太阳能应用。新产品突破性地降低了 R DS(on)(与 SuperSO8 中的下一个理想替代品相比高达 25%)和 Q rr,而不影响 FOM gd 和 FOM OSS,从而在优化系统效率的同时有效减少设计工作量。此外,超低反向恢复电荷(在 SuperSO8 中,Q rr = 26 nC)提高了换流坚固性。 通信 驱动 驱动器 |
文件: | 总10页 (文件大小:1100K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IPB044N15N5
MOSFET
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
D²-PAKꢀ7pin
Features
ꢀFeatures
tab
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀ175ꢀ°Cꢀoperatingꢀtemperature
1
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplication
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
7
Drain
Pin 4, tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
150
4.4
Unit
Gate
Pin 1
VDS
V
Source
Pin 2,3,5,6,7
RDS(on),maxꢀ(TO263)
mΩ
A
ID
174
42
Qrr
nC
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPB044N15N5
PG-TO263-7
044N15N5
-
1) J-STD20 and JESD22
Final Data Sheet
1
2016-04-06
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPB044N15N5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
2016-04-06
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPB044N15N5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
174
123
TC=25ꢀ°C
A
Continuous drain current
ID
TC=100ꢀ°C
Pulsed drain current1)
Avalanche energy, single pulse2)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
696
470
20
A
TC=25ꢀ°C
-
mJ
V
ID=100ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
-
Power dissipation
300
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
0.3
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.5
K/W
K/W
-
-
Thermal resistance, junction - ambient,
minimal footprint
-
-
-
-
62
40
Thermal resistance, junction - ambient,
6 cm2 cooling area3)
RthJA
K/W
-
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
150
3.0
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3.8
4.6
VDS=VGS,ꢀID=264ꢀµA
-
-
0.1
10
1
100
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
1
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
3.4
3.7
4.4
4.8
VGS=10ꢀV,ꢀID=87ꢀA
VGS=8ꢀV,ꢀID=44ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
0.8
1.2
-
Ω
-
Transconductance
72
144
S
|VDS|>2|ID|RDS(on)max,ꢀID=87ꢀA
1) See Diagram 3
2) See Diagram 13
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
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OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPB044N15N5
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
6000 8000 pF
1500 2000 pF
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
34
19
60
-
pF
ns
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=87ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=87ꢀA,
RG,ext=1.6ꢀΩ
6
-
-
-
ns
ns
ns
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=87ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
24
5.0
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=87ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
34
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
-
-
-
-
-
-
-
nC
nC
nC
nC
V
VDD=75ꢀV,ꢀID=87ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=87ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=87ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=87ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=87ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀVGS=0ꢀV
Qgd
16
24
-
Qsw
Qg
27
80
100
-
Vplateau
Qoss
5.6
225
299
nC
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
174
696
1.1
86
Diode continous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.86
43
42
V
VGS=0ꢀV,ꢀIF=87ꢀA,ꢀTj=25ꢀ°C
VR=75ꢀV,ꢀIF=87,ꢀdiF/dt=100ꢀA/µs
VR=75ꢀV,ꢀIF=87,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
Qrr
84
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
2016-04-06
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPB044N15N5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
320
180
160
140
120
100
80
280
240
200
160
120
80
60
40
40
20
0
0
0
50
100
150
200
0
50
100
150
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
1 µs
10 µs
100 µs
102
101
100
10-1
0.5
1 ms
10 ms
DC
0.2
10-1
0.1
0.05
0.02
0.01
single pulse
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
5
2016-04-06
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPB044N15N5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
700
8
10 V
5.5 V
7
600
8 V
6 V
6
500
7 V
5
400
7 V
8 V
4
3
2
1
0
300
10 V
200
6 V
100
5.5 V
5 V
0
0
1
2
3
4
5
0
100
200
300
400
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
400
220
200
180
160
140
120
100
80
350
300
250
200
150
100
60
40
175 °C
50
0
20
25 °C
0
0
2
4
6
8
0
40
80
120
160
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
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OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPB044N15N5
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
10
5.0
9
8
7
6
4.5
2640 µA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
264 µA
max
5
4
typ
3
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=87ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
Ciss
25 °C
175 °C
25°C max
175°C max
Coss
103
102
101
100
102
101
100
Crss
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
7
2016-04-06
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPB044N15N5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
103
10
75 V
8
6
4
2
0
30 V
120 V
102
25 °C
100 °C
125 °C
101
100
100
101
102
103
0
20
40
60
80
100
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=87ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
170
165
160
155
150
145
140
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
8
2016-04-06
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPB044N15N5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO263-7,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
9
2016-04-06
OptiMOSª5ꢀPower-Transistor,ꢀ150ꢀV
IPB044N15N5
RevisionꢀHistory
IPB044N15N5
Revision:ꢀ2016-04-06
Previous Revision
Date
Subjects (major changes since last revision)
Release of final version
2016-04-06
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
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TrademarksꢀupdatedꢀAugustꢀ2015
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
10
2016-04-06
相关型号:
IPB048N06LGATMA1
Power Field-Effect Transistor, 100A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON
IPB048N15N5
英飞凌推出的 OptiMOS™5 150V 功率 MOSFET 特别适合叉车和电动脚踏车等低压驱动器以及通信和太阳能应用。产品突破性地降低了 R DS(on)(与 SuperSO8 中的下一个理想替代品相比高达 25%)和 Q rr,而不影响 FOM gd 和 FOM OSS,从而在优化系统效率的同时有效减少设计工作量。此外,超低反向恢复电荷(在 SuperSO8 中,Q rr = 26 nC)提高了换流坚固性。
INFINEON
IPB048N15N5ATMA1
Power Field-Effect Transistor, 120A I(D), 150V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
INFINEON
IPB048N15N5LFATMA1
Power Field-Effect Transistor, 18A I(D), 150V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
INFINEON
IPB049N06L3GATMA1
Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON
IPB049N08N5
Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB049N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
INFINEON
IPB049NE7N3GATMA1
Power Field-Effect Transistor, 80A I(D), 75V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON
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