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IPB080N06NG [INFINEON]

OptiMOS㈢ Power-Transistor; OptiMOS㈢功率三极管
IPB080N06NG
型号: IPB080N06NG
厂家: Infineon    Infineon
描述:

OptiMOS㈢ Power-Transistor
OptiMOS㈢功率三极管

文件: 总10页 (文件大小:446K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IPB080N06NG_10

OptiMOS™ Power-Transistor Features Low gate charge for fast switching applications

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INFINEON

IPB081N06L3G

OptiMosTM3 Power-Transistor

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INFINEON

IPB083N10N3 G

英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比,该系列在 R Ds(on)和 FOM(品质因数)方面均降低了30%。

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IPB083N10N3G

OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

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INFINEON

IPB083N15N5LF

OptiMOS™线性FET是一种全新方法,实现了增强型MOSFET饱和区域内的导通电阻(R DS(on) )和线性模式能力的出色平衡。它提供先进的沟槽栅MOSFET R DS(on)以及经典平面MOSFET的宽安全工作区。

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IPB085N06LG

OptiMOS㈢ Power-Transistor

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IPB085N06LG_10

OptiMOS™ Power-Transistor Features For fast switching converters and sync. rectification

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IPB08CN10NG

OptiMOS㈢2 Power-Transistor

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INFINEON

IPB08CN10NGATMA1

Power Field-Effect Transistor, 95A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

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INFINEON

IPB08CN10NG_10

OptiMOS™2 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

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INFINEON

IPB08CNE8NG

OptiMOS㈢2 Power-Transistor

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IPB090N06N3G

OptiMOS?3 Power-Transistor

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IPB091N06NG

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IPB096N03LG

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IPB096N03LGATMA1

Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

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IPB097N08N3G

OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.

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INFINEON

IPB09N03LA

OptiMOS 2 Power-Transistor

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IPB09N03LAG

OptiMOS㈢2 Power-Transistor

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INFINEON

IPB09N03LAGATMA1

Power Field-Effect Transistor, 50A I(D), 25V, 0.0151ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

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INFINEON