IPB110N20N3LF [INFINEON]
OptiMOS™线性FET是一种全新方法，实现了增强型MOSFET饱和区域内的导通电阻（R DS（on） ）和线性模式能力的出色平衡。它提供先进的沟槽栅MOSFET R DS（on）以及经典平面MOSFET的宽安全工作区。;
| 型号： | IPB110N20N3LF |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™线性FET是一种全新方法，实现了增强型MOSFET饱和区域内的导通电阻（R DS（on） ）和线性模式能力的出色平衡。它提供先进的沟槽栅MOSFET R DS（on）以及经典平面MOSFET的宽安全工作区。 栅 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：991K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB110N20N3LF
MOSFET
OptiMOSTMꢀ3ꢀLinearꢀFET,ꢀ200ꢀV
D²PAK
Features
•ꢀIdealꢀforꢀhot-swapꢀandꢀe-fuseꢀapplications
•ꢀVeryꢀlowꢀon-resistanceꢀꢀRDS(on)
•ꢀWideꢀsafeꢀoperatingꢀareaꢀSOA
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀ100%ꢀavalancheꢀtested
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Drain
Pin 2, Tab
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
200
11
Unit
VDS
V
Gate
Pin 1
RDS(on),max
ID
mΩ
A
Source
Pin 3
88
Ipulseꢀ(VDS=56ꢀV,ꢀtp=10
ms)
8.7
A
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPB110N20N3LF
PG-TO 263-3
110N20LF
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2017-02-16
OptiMOSTMꢀ3ꢀLinearꢀFET,ꢀ200ꢀV
IPB110N20N3LF
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2017-02-16
OptiMOSTMꢀ3ꢀLinearꢀFET,ꢀ200ꢀV
IPB110N20N3LF
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
88
61
11
VGS=10ꢀV,ꢀTC=25ꢀ°C
Continuous drain current
ID
A
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTC=25ꢀ°C,ꢀRthJAꢀ=40ꢀK/W1)
Pulsed drain current2)
Avalanche energy, single pulse3)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
352
560
20
A
TC=25ꢀ°C
-
mJ
V
ID=80ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
-
Power dissipation
250
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
0.3
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.5
K/W
K/W
-
-
Device on PCB,
minimal footprint
-
-
-
-
62
40
Device on PCB,
RthJA
K/W
-
6 cm² cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2017-02-16
OptiMOSTMꢀ3ꢀLinearꢀFET,ꢀ200ꢀV
IPB110N20N3LF
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
200
2.2
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3.2
4.2
VDS=VGS,ꢀID=260ꢀµA
-
-
1
10
2
100
VDS=160ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=160ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
IDSS
IGSS
µA
µA
-
-
2
-2
5
-5
VGS=20ꢀV,ꢀVDS=0ꢀV
VGS=-10ꢀV,ꢀVDS=0ꢀV
Drain-source on-state resistance
Gate resistance1)
RDS(on)
RG
-
9.8
60
31
11
90
-
mΩ VGS=10ꢀV,ꢀID=88ꢀA
-
Ω
-
Transconductance
gfs
16
S
|VDS|>2|ID|RDS(on)max,ꢀID=44ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics1)ꢀ
Values
Typ.
500
390
5
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
650
510
-
Input capacitance
Ciss
Coss
Crss
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz
Output capacitance
Reverse transfer capacitance
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=44ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
6
-
-
-
-
ns
ns
ns
ns
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=44ꢀA,
RG,ext=1.6ꢀΩ
70
79
26
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=44ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=44ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
4
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge1)
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
V
VDD=100ꢀV,ꢀID=22ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=22ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=22ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=22ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀVGS=0ꢀV
Qgd
51
Qg
76
Vplateau
Qoss
6.8
154
nC
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2017-02-16
OptiMOSTMꢀ3ꢀLinearꢀFET,ꢀ200ꢀV
IPB110N20N3LF
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
88
352
1.2
-
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.95
145
770
V
VGS=0ꢀV,ꢀIF=88ꢀA,ꢀTj=25ꢀ°C
VR=100ꢀV,ꢀIF=44ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=100ꢀV,ꢀIF=44ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
Qrr
-
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2017-02-16
OptiMOSTMꢀ3ꢀLinearꢀFET,ꢀ200ꢀV
IPB110N20N3LF
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
300
100
250
200
150
100
50
80
60
40
20
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
1 µs
0.5
10 µs
100 µs
102
101
100
10-1
0.2
0.1
0.05
0.02
1 ms
10 ms
DC
10-2
0.01
single pulse
10-3
100
101
102
103
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2017-02-16
OptiMOSTMꢀ3ꢀLinearꢀFET,ꢀ200ꢀV
IPB110N20N3LF
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
60
16
14
12
50
40
6.5 V
8 V
10
10 V
6 V
10 V
30
8
6
4
2
0
5.5 V
20
10
0
5 V
4.5 V
0
1
2
3
4
5
0
10
20
30
40
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C,ꢀtp=30ꢀµs;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
60
50
50
40
30
20
40
30
20
10
0
150 °C
10
25 °C
0
0
1
2
3
4
5
6
7
0
20
40
60
80
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀVDS=10ꢀV;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2017-02-16
OptiMOSTMꢀ3ꢀLinearꢀFET,ꢀ200ꢀV
IPB110N20N3LF
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.5
4
2600 µA
2.0
1.5
1.0
0.5
0.0
3
260 µA
2
1
0
-80
-40
0
40
80
120
160
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=88ꢀA,ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
150 °C
150 °C, max
Coss
103
102
101
100
Ciss
102
101
Crss
100
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
2.5
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2017-02-16
OptiMOSTMꢀ3ꢀLinearꢀFET,ꢀ200ꢀV
IPB110N20N3LF
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
12
25 °C
10
100 °C
8
160 V
100 V
101
6
125 °C
40 V
4
2
0
100
100
101
102
103
0
20
40
60
80
100
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=22ꢀAꢀpulsed,ꢀresistiveꢀload;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
230
220
210
200
190
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2017-02-16
OptiMOSTMꢀ3ꢀLinearꢀFET,ꢀ200ꢀV
IPB110N20N3LF
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ263-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2017-02-16
OptiMOSTMꢀ3ꢀLinearꢀFET,ꢀ200ꢀV
IPB110N20N3LF
RevisionꢀHistory
IPB110N20N3LF
Revision:ꢀ2017-02-16,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
2016-12-15
2017-02-16
Update technology heading
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2017-02-16
相关型号：
IPB117N20NFD
Power Field-Effect Transistor, 84A I(D), 200V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2
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IPB117N20NFDATMA1
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