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IPB117N20NFDATMA1 [INFINEON]

Power Field-Effect Transistor, 84A I(D), 200V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2;
IPB117N20NFDATMA1
型号： IPB117N20NFDATMA1
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 84A I(D), 200V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2
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中文：  中文翻译
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MOSFET  
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor  
OptiMOSTM  
OptiMOSTMFDꢀPower-Transistor,ꢀ200ꢀV  
IPB117N20NFD  
DataꢀSheet  
Rev.ꢀ2.0  
Final  
PowerꢀManagementꢀ&ꢀMultimarket  
OptiMOSTMFDꢀPower-Transistor,ꢀ200ꢀV  
IPB117N20NFD  
D²PAK  
1ꢀꢀꢀꢀꢀDescription  
Features  
•ꢀN-channel,ꢀnormalꢀlevel  
•ꢀFastꢀDiodeꢀ(FD)ꢀwithꢀreducedꢀQrr  
•ꢀOptimizedꢀforꢀhardꢀcommutationꢀruggedness  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
•ꢀ175ꢀ°Cꢀoperatingꢀtemperature  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀ1)ꢀꢀforꢀtargetꢀapplication  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
Drain  
Pin 2, tab  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
Gate  
Pin 1  
VDS  
200  
V
RDS(on),max  
ID  
11.7  
84  
mΩ  
A
Source  
Pin 3  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPB117N20NFD  
PG-TO 263-3  
117N20NF  
-
1) J-STD20 and JESD22  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2014-02-06  
OptiMOSTMFDꢀPower-Transistor,ꢀ200ꢀV  
IPB117N20NFD  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2014-02-06  
OptiMOSTMFDꢀPower-Transistor,ꢀ200ꢀV  
IPB117N20NFD  
2ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
at 25 °C  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
-
-
-
-
84  
60  
TC=25ꢀ°C  
TC=100ꢀ°C  
Continuous drain current  
ID  
A
Pulsed drain current 1)  
ID,pulse  
EAS  
-
-
-
-
336  
375  
A
TC=25ꢀ°C  
Avalanche energy, single pulse  
mJ  
ID=67ꢀA,ꢀRGS=25ꢀΩ  
ID=160ꢀA,ꢀVDS=100ꢀV,  
di/dt=1500ꢀA/µs,ꢀTj,max=175ꢀ°C  
Reverseꢀdiodeꢀpeakꢀdv/dt  
dv/dt  
-
-
60  
kV/µs  
Gate source voltage  
Power dissipation  
VGS  
Ptot  
-20  
-
-
-
20  
V
-
300  
W
TC=25ꢀ°C  
IEC climatic category;  
DIN IEC 68-1: 55/175/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
0.3  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
0.5  
K/W  
K/W  
-
-
Thermal resistance, junction - ambient,  
minimal footprint  
-
-
-
-
62  
40  
Thermal resistance, junction - ambient,  
6 cm2 cooling area 2)  
RthJA  
K/W  
-
1) See figure 3  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.  
PCB is vertical in still air.  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2014-02-06  
OptiMOSTMFDꢀPower-Transistor,ꢀ200ꢀV  
IPB117N20NFD  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
200  
2
Typ.  
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
3
4
VDS=VGS,ꢀID=270ꢀµA  
-
-
0.1  
10  
1
100  
VDS=160ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=160ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
IDSS  
µA  
nA  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IGSS  
RDS(on)  
RG  
-
1
100  
11.7  
3.6  
-
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
10.3  
2.4  
139  
mΩ VGS=10ꢀV,ꢀID=84ꢀA  
-
Ω
-
Transconductance  
gfs  
70  
S
|VDS|>2|ID|RDS(on)max,ꢀID=84ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
5000 6650 pF  
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
400  
6
532  
13  
pF  
pF  
Reverse transfer capacitance  
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=42ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
13  
10  
24  
8
-
-
-
-
ns  
ns  
ns  
ns  
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=42ꢀA,  
RG,ext=1.6ꢀΩ  
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=42ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=42ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristicsꢀ1)ꢀ  
Values  
Typ.  
25  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Switching charge  
Gate charge total  
Gate plateau voltage  
Output charge  
Qgs  
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
V
VDD=100ꢀV,ꢀID=84ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=100ꢀV,ꢀID=84ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=100ꢀV,ꢀID=84ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=100ꢀV,ꢀID=84ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=100ꢀV,ꢀID=84ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=100ꢀV,ꢀVGS=0ꢀV  
Qgd  
8
-
Qsw  
Qg  
17  
-
65  
87  
-
Vplateau  
Qoss  
4.7  
162  
-
nC  
1) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2014-02-06  
OptiMOSTMFDꢀPower-Transistor,ꢀ200ꢀV  
IPB117N20NFD  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
84  
Diode continous forward current  
Diode pulse current 1)  
Diode hard commutation current 2)  
IS  
-
-
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
IS,hard  
VSD  
trr  
-
336  
160  
1.2  
288  
-
A
TC=25ꢀ°C  
-
A
TC=25ꢀ°C,ꢀdiF/dt=1500ꢀA/µs  
VGS=0ꢀV,ꢀIF=84ꢀA,ꢀTj=25ꢀ°C  
VR=100ꢀV,ꢀIF=ꢀ56ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=100ꢀV,ꢀIF=ꢀ56ꢀA,ꢀdiF/dt=100ꢀA/µs  
Diode forward voltage  
1
V
Reverse recovery time  
144  
629  
ns  
nC  
Reverse recovery charge  
Qrr  
1) Diode pulse current is defined by thermal and/or package limits  
2) Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2014-02-06  
OptiMOSTMFDꢀPower-Transistor,ꢀ200ꢀV  
IPB117N20NFD  
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
320  
100  
280  
240  
200  
160  
120  
80  
80  
60  
40  
20  
0
40  
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
100  
1 µs  
10 µs  
100 µs  
102  
101  
100  
10-1  
0.5  
1 ms  
0.2  
10-1  
10 ms  
0.1  
DC  
0.05  
0.02  
0.01  
single pulse  
10-2  
10-1  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2014-02-06  
OptiMOSTMFDꢀPower-Transistor,ꢀ200ꢀV  
IPB117N20NFD  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
200  
20  
10 V  
175  
4.5 V  
150  
125  
100  
75  
7 V  
15  
5 V  
5 V  
7 V  
10 V  
10  
4.5 V  
50  
5
25  
0
0
0
1
2
3
4
5
0
20  
40  
60  
80  
100  
120  
140  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
200  
180  
180  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
60  
60  
40  
40  
175 °C  
20  
20  
0
25 °C  
0
0
2
4
6
8
0
25  
50  
75  
100  
125  
150  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID);ꢀTj=25ꢀ°C  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2014-02-06  
OptiMOSTMFDꢀPower-Transistor,ꢀ200ꢀV  
IPB117N20NFD  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
35  
4.0  
3.5  
30  
25  
20  
2700 µA  
3.0  
270 µA  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
98%  
15  
typ  
10  
5
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj);ꢀID=84ꢀA;ꢀVGS=10ꢀV  
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
Ciss  
25 °C  
175 °C  
25°C, 98%  
175°C, 98%  
Coss  
103  
102  
101  
100  
102  
Crss  
101  
100  
0
40  
80  
120  
160  
0.0  
0.5  
1.0  
1.5  
2.0  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2014-02-06  
OptiMOSTMFDꢀPower-Transistor,ꢀ200ꢀV  
IPB117N20NFD  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
25 °C  
8
160 V  
100 °C  
100 V  
6
125 °C  
40 V  
101  
4
2
0
100  
100  
101  
102  
103  
0
20  
40  
60  
80  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)  
VGS=f(Qgate);ꢀID=84ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Gate charge waveforms  
230  
220  
210  
200  
190  
180  
170  
160  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2014-02-06  
OptiMOSTMFDꢀPower-Transistor,ꢀ200ꢀV  
IPB117N20NFD  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ263-3,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2014-02-06  
OptiMOSTMFDꢀPower-Transistor,ꢀ200ꢀV  
IPB117N20NFD  
RevisionꢀHistory  
IPB117N20NFD  
Revision:ꢀ2014-02-06,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
2.0  
Subjects (major changes since last revision)  
Release of final version  
2014-02-06  
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TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2014-02-06  

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