IPB120N06S4H1ATMA1 [INFINEON]
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN;
| 型号： | IPB120N06S4H1ATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB120N06S4-H1
IPI120N06S4-H1, IPP120N06S4-H1
OptiMOS®-T2 Power-Transistor
Product Summary
VDS
60
2.1
120
V
R
DS(on),max (SMD version)
mΩ
A
I D
Features
• N-channel - Enhancement mode
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPB120N06S4-H1
IPI120N06S4-H1
IPP120N06S4-H1
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
4N06H1
4N06H1
4N06H1
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25°C, VGS=10V
120
120
A
T C=100°C, VGS=10V2)
Pulsed drain current2)
I D,pulse
EAS
T C=25°C
480
1060
120
±20
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=60A
mJ
A
I AS
-
VGS
-
V
Ptot
T C=25°C
Power dissipation
250
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
°C
Rev. 1.0
page 1
2009-03-23
IPB120N06S4-H1
IPI120N06S4-H1, IPP120N06S4-H1
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
-
-
0.60 K/W
62
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS
VGS(th)
V
V
GS=0V, I D= 1mA
Drain-source breakdown voltage
Gate threshold voltage
60
-
-
V
DS=VGS, I D=200µA
2.0
3.0
4.0
V
DS=60V, VGS=0V,
I DSS
Zero gate voltage drain current
-
-
0.03
10
1
µA
T j=25°C
V
DS=60V, VGS=0V,
200
T j=125°C2)
I GSS
V
V
GS=20V, VDS=0V
GS=10V, I D=100A
Gate-source leakage current
-
-
-
100 nA
R DS(on)
Drain-source on-state resistance
2.1
2.4
mΩ
V
GS=10V, I D=100A,
-
1.8
2.1
SMD version
Rev. 1.0
page 2
2009-03-23
IPB120N06S4-H1
IPI120N06S4-H1, IPP120N06S4-H1
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
16840 21900 pF
V
GS=0V, VDS=25V,
4120
160
30
5360
f =1MHz
320
-
-
-
-
ns
5
V
DD=30V, VGS=10V,
I D=120A, R G=3.5Ω
t d(off)
t f
Turn-off delay time
Fall time
60
15
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
84
22.5
208
5.0
110 nC
45
Q gd
V
V
DD=48V, I D=120A,
GS=0 to 10V
Q g
270
Vplateau
Gate plateau voltage
-
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
120
480
T C=25°C
I S,pulse
V
GS=0V, I F=100A,
VSD
Diode forward voltage
Reverse recovery time2)
Reverse recovery charge2)
0.6
0.95
60
1.3
V
T j=25°C
VR=30V, I F=120A,
diF/dt =100A/µs
t rr
-
-
-
-
ns
nC
Q rr
90
1) Current is limited by bondwire; with an R thJC = 0.6K/W the chip is able to carry 261A at 25°C.
2) Specified by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2009-03-23
IPB120N06S4-H1
IPI120N06S4-H1, IPP120N06S4-H1
1 Power dissipation
2 Drain current
P
tot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 6 V; SMD
300
250
200
150
100
50
140
120
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0; SMD
parameter: t p
Z
parameter: D =t p/T
101
1000
100
10
1 µs
10 µs
100
0.5
100 µs
1 ms
10-1
0.1
0.05
10-2
0.01
single pulse
10-3
1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t p [s]
V
DS [V]
Rev. 1.0
page 4
2009-03-23
IPB120N06S4-H1
IPI120N06S4-H1, IPP120N06S4-H1
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C; SMD
parameter: VGS
6 Typ. drain-source on-state resistance
DS(on) = f(I D); T j = 25 °C; SMD
R
parameter: VGS
480
10
10 V
8 V
5 V
6 V
9
8
7
6
5
4
3
2
1
420
7 V
6 V
360
300
240
180
120
60
5 V
7 V
8 V
10 V
0
0
1
2
3
4
5
6
0
60 120 180 240 300 360 420 480
D [A]
V
DS [V]
I
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R
DS(on) = f(T j); I D = 100 A; VGS = 10 V; SMD
480
420
360
300
240
180
120
60
3.5
25 °C
175 °C
-55 °C
3
2.5
2
1.5
1
0
3
4
5
6
7
-60
-20
20
60
T j [°C]
100
140
180
V
GS [V]
Rev. 1.0
page 5
2009-03-23
IPB120N06S4-H1
IPI120N06S4-H1, IPP120N06S4-H1
9 Typ. gate threshold voltage
GS(th) = f(T j); VGS = VDS
10 Typ. capacitances
V
C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: I D
105
4
3.5
3
Ciss
104
103
102
101
2000 µA
Coss
200 µA
2.5
2
Crss
1.5
1
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
V
DS [V]
11 Typical forward diode characteristicis
12 Avalanche characteristics
A S= f(t AV
IF = f(VSD)
I
)
parameter: T j
parameter: Tj(start)
103
1000
102
100
10
25 °C
100 °C
150 °C
25 °C
175 °C
101
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
1
10
100
1000
V
SD [V]
t
AV [µs]
Rev. 1.0
page 6
2009-03-23
IPB120N06S4-H1
IPI120N06S4-H1, IPP120N06S4-H1
13 Avalanche energy
14 Drain-source breakdown voltage
BR(DSS) = f(T j); I D = 1 mA
E
AS = f(T j); I D = 60 A
V
66
64
62
60
58
56
1200
1000
800
600
400
200
0
-55
-15
25
65
105
145
25
75
125
175
T j [°C]
T j [°C]
15 Typ. gate charge
GS = f(Q gate); I D = 120 A pulsed
16 Gate charge waveforms
V
parameter: VDD
10
9
8
7
6
5
4
3
2
1
0
V GS
12 V
Q g
48 V
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
40
80
120
160
200
240
Q
gate [nC]
Rev. 1.0
page 7
2009-03-23
IPB120N06S4-H1
IPI120N06S4-H1, IPP120N06S4-H1
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2009
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2009-03-23
IPB120N06S4-H1
IPI120N06S4-H1, IPP120N06S4-H1
Revision History
Version
Date
Changes
Revision 1.0
23.03.2009 Final data sheet
Rev. 1.0
page 9
2009-03-23
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