IPB120N10S4-05 [INFINEON]
车规级MOSFET;
| 型号： | IPB120N10S4-05 |
| 厂家： | 
Infineon |
| 描述： | 车规级MOSFET |
| 文件： | 总9页 (文件大小：386K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB120N10S4-05
IPI120N10S4-05, IPP120N10S4-05
OptiMOS®-T2 Power-Transistor
Product Summary
VDS
100
5.0
V
RDS(on),max (SMD version)
mW
A
ID
120
Features
• N-channel - Normal Level - Enhancement mode
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
4N1005
4N1005
4N1005
IPB120N10S4-05
IPI120N10S4-05
IPP120N10S4-05
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C, V GS=10V1)
I D
Continuous drain current
120
95
A
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse
E AS
T C=25°C
480
330
120
±20
190
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=60A
mJ
A
I AS
-
V GS
-
V
P tot
T C=25°C
Power dissipation
W
T j, T stg
Operating and storage temperature
-
-55 ... +175
°C
Rev.1.0
page 1
2014-07-01
IPB120N10S4-05
IPI120N10S4-05, IPP120N10S4-05
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
-
-
0.8
62
K/W
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=120µA
Drain-source breakdown voltage
Gate threshold voltage
100
2.0
-
-
-
3.5
1
V
2.7
0.1
I DSS
V DS=100V, V GS=0V
Zero gate voltage drain current
µA
V DS=100V, V GS=0V,
T j=125°C2)
-
10
100
I GSS
V GS=20V, V DS=0V
Gate-source leakage current
-
-
-
100 nA
R DS(on) V GS=10V, I D=100A
Drain-source on-state resistance
4.5
5.3
5.0
mW
V GS=10V, I D=100A,
SMD version
-
4.2
Rev.1.0
page 2
2014-07-01
IPB120N10S4-05
IPI120N10S4-05, IPP120N10S4-05
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
5030
1600
100
15
6540 pF
2080
V GS=0V, V DS=25V,
f =1MHz
200
-
-
-
-
ns
10
V DD=50V, V GS=10V,
I D=120A, R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
30
35
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
24
14
70
4.9
31
28
91
-
nC
Q gd
V DD=80V, I D=120A,
V GS=0 to 10V
Q g
V plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
120
480
T C=25°C
I S,pulse
V GS=0V, I F=100A,
T j=25°C
V SD
Diode forward voltage
Reverse recovery time2)
Reverse recovery charge2)
-
-
-
1.0
65
1.3
V
V R=50V, I F=50A,
di F/dt =100A/µs
t rr
-
-
ns
nC
Q rr
130
1) Current is limited by bondwire; with an R thJC = 0.8K/W the chip is able to carry 134A at 25°C.
2) Specified by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.1.0
page 3
2014-07-01
IPB120N10S4-05
IPI120N10S4-05, IPP120N10S4-05
1 Power dissipation
2 Drain current
P tot = f(T C); V GS = 10 V
I D = f(T C); V GS = 10 V; SMD
300
250
200
150
100
50
140
120
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0; SMD
parameter: t p
parameter: D =t p/T
101
1000
1 µs
10 µs
100
100 µs
1 ms
100
0.5
10-1
0.1
0.05
10
0.01
10-2
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev.1.0
page 4
2014-07-01
IPB120N10S4-05
IPI120N10S4-05, IPP120N10S4-05
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
480
14
5 V
6 V
5.5 V
10 V
7 V
12
10
8
360
240
120
0
6 V
5.5 V
6
7 V
5 V
10 V
4
2
0
1
2
3
4
5
0
120
240
360
480
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD
480
360
240
120
0
10
9
-55 °C
25 °C
8
175 °C
7
6
5
4
3
2
3
4
5
6
7
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev.1.0
page 5
2014-07-01
IPB120N10S4-05
IPI120N10S4-05, IPP120N10S4-05
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
4
3.5
3
Ciss
Coss
103
102
101
1200 µA
2.5
120 µA
2
1.5
1
Crss
0
5
10
15
20
25
30
-60
-20
20
60
100
140
180
VDS [V]
Tj [°C]
11 Typical forward diode characteristicis
12 Avalanche characteristics
I A S= f(t AV
I F = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
1000
102
100
25 °C
100 °C
150 °C
175 °C
25 °C
101
10
100
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev.1.0
page 6
2014-07-01
IPB120N10S4-05
IPI120N10S4-05, IPP120N10S4-05
13 Avalanche energy
E AS = f(T j)
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
110
108
106
104
102
100
98
800
600
30 A
400
60 A
200
120 A
96
94
0
-55
-15
25
65
105
145
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 120 A pulsed
parameter: V DD
10
9
8
7
6
5
4
3
2
1
0
V GS
20 V
Q g
80 V
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
20
40
60
80
Qgate [nC]
Rev.1.0
page 7
2014-07-01
IPB120N10S4-05
IPI120N10S4-05, IPP120N10S4-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2014
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev.1.0
page 8
2014-07-01
IPB120N10S4-05
IPI120N10S4-05, IPP120N10S4-05
Revision History
Version
Date
Changes
Revision 1.0
01.07.2014 Data Sheet Revision 1.0
Rev.1.0
page 9
2014-07-01
相关型号：
IPB120N10S405ATMA1
Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3-2, 3/2 PIN
INFINEON
IPB120P04P404ATMA1
Power Field-Effect Transistor, 120A I(D), 40V, 0.0035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IPB120P04P4L03ATMA1
Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
IPB123N10N3 G
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。
INFINEON
IPB123N10N3GATMA1
Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON
IPB12CN10NGATMA1
Power Field-Effect Transistor, 67A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明