IPB160N04S4H1ATMA1 [INFINEON]
Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6;
| 型号： | IPB160N04S4H1ATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB160N04S4-H1
OptiMOS®-T2 Power-Transistor
Product Summary
V DS
R DS(on)
I D
40
1.6
160
V
mW
A
Features
• N-channel - Enhancement mode
PG-TO263-7-3
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Marking
IPB160N04S4-H1
PG-TO263-7-3
4N04H1
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C, V GS=10V1)
I D
Continuous drain current
160
160
A
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse
E AS
I AS
T C=25 °C
640
400
I D=80 A
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
mJ
A
-
160
V GS
P tot
-
±20
V
T C=25 °C
Power dissipation
167
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.0
page 1
2012-02-14
IPB160N04S4-H1
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
-
0.9
62
40
K/W
minimal footprint
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D= 1 mA
V GS(th) V DS=V GS, I D=110 µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
V
2.0
3.0
4.0
V DS=40 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.05
1
1
µA
V DS=18 V, V GS=0 V,
T j=85 °C2)
20
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
100 nA
RDS(on) V GS=10 V, I D=100 A
Drain-source on-state resistance
-
1.4
1.6
mΩ
Rev. 1.0
page 2
2012-02-14
IPB160N04S4-H1
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
8400
1800
60
10920 pF
2700
V GS=0 V, V DS=25 V,
f =1 MHz
138
28
-
-
-
-
ns
22
V DD=20 V, V GS=10 V,
I D=160 A, R G=3.5 W
t d(off)
t f
Turn-off delay time
Fall time
29
33
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
44
14
57
32
137
-
nC
Q gd
V DD=32 V, I D=160 A,
V GS=0 to 10 V
Q g
105
5.2
V plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
160
640
T C=25 °C
I S,pulse
V GS=0 V, I F=100 A,
T j=25 °C
V SD
Diode forward voltage
-
0.9
1.3
V
Reverse recovery time2)
t rr
-
-
56
73
-
-
ns
V R=20 V, I F=50A,
di F/dt =100 A/µs
Reverse recovery charge2)
Q rr
nC
1) Current is limited by bondwire; with an R thJC = 0.9 K/W the chip is able to carry 248A at 25°C.
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2012-02-14
IPB160N04S4-H1
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
175
150
125
100
75
180
160
140
120
100
80
60
50
40
25
20
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
100
1000
100
10
1 µs
0.5
10 µs
100 µs
0.1
10-1
0.05
0.01
1 ms
10-2
single pulse
10-3
1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t p [s]
V DS [V]
Rev. 1.0
page 4
2012-02-14
IPB160N04S4-H1
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
12
7 V
10 V
600
6 V
10
8
6.5 V
5.5 V
6
500
400
300
200
100
0
6.5 V
6
6 V
7 V
4
5.5 V
2
10 V
0
0
100
200
300
400
500
600
0
2
4
6
V DS [V]
I D [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
2.5
600
500
400
300
2
1.5
200
1
175 °C
100
25 °C
-55 °C
0.5
0
-60
-20
20
60
100
140
180
2
3
4
5
6
7
8
T j [°C]
V GS [V]
Rev. 1.0
page 5
2012-02-14
IPB160N04S4-H1
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
4
3.5
3
Ciss
Coss
103
550 µA
110 µA
2.5
2
1.5
1
Crss
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD
12 Typ. avalanche characteristics
I AS = f(t AV
)
)
parameter: T j
parameter: Tj(start)
103
1000
102
100
25 °C
100 °C
150 °C
25 °C
175 °C
101
10
100
0
1
1
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
V SD [V]
t AV [µs]
Rev. 1.0
page 6
2012-02-14
IPB160N04S4-H1
13 Typical avalanche energy
E AS = f(T j)
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
46
875
40 A
750
625
500
44
42
40
38
36
80 A
375
250
160 A
125
0
-60
-20
20
60
100
140
180
25
75
125
175
T j [°C]
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 160 A pulsed
parameter: V DD
12
10
8
VGS
Q g
8 V
32 V
6
4
Qgate
2
Qgd
Q gs
0
0
20
40
60
80
100
120
Q gate [nC]
Rev. 1.0
page 7
2012-02-14
IPB160N04S4-H1
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2010
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2012-02-14
IPB160N04S4-H1
Revision History
Version
Date
Changes
4/13/2010 Final Data Sheet
Revision 1.0
Rev. 1.0
page 9
2012-02-14
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