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IPB26CN10N [INFINEON]

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated; 的OptiMOS功率三极管特性增强模式的逻辑电平额定雪崩

IPB26CN10N


元器件型号：	IPB26CN10N
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated 的OptiMOS功率三极管特性增强模式的逻辑电平额定雪崩
PDF文件：	总12页 (文件大小：542K)
下载文档：	下载PDF数据表文档文件
型号参数：IPB26CN10N参数

IPB26CN10N_10

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

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11 INFINEON

IPB26CN10NG

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

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55 INFINEON

IPB26CN10NG

OptiMOS㈢2 Power-Transistor

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19 INFINEON

IPB26CN10NGATMA1

Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

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2 INFINEON

IPB26CNE8NG

OptiMOS㈢2 Power-Transistor

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24 INFINEON

IPB320N20N3G

OptiMOSTM3 Power-Transistor Features N-channel, normal level

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58 INFINEON

IPB320N20N3G

OptiMOS3 Power Transistor

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44 INFINEON

IPB320N20N3G_10

OptiMOS3 Power Transistor

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9 INFINEON

IPB34CN10NG

Power Field-Effect Transistor, 27A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

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0 INFINEON

IPB34CN10NGATMA1

Power Field-Effect Transistor, 27A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

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0 INFINEON

IPB35CN10NG

OptiMOS2 Power-Transistor

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27 INFINEON

IPB35CN10NG

OptiMOS㈢2 Power-Transistor

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43 INFINEON

IPB35N10S3L-26

OptiMOSâ¢-T Power-Transistor

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0 INFINEON

IPB35N10S3L-26

Material Content Data Sheet

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1 INFINEON

IPB35N10S3L-26_12

OptiMOSâ¢-T Power-Transistor

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0 INFINEON

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