IPB50R199CP [INFINEON]
CoolMOS Power Transistor; 的CoolMOS功率晶体管型号: | IPB50R199CP |
厂家: | Infineon |
描述: | CoolMOS Power Transistor |
文件: | 总10页 (文件大小:556K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IPB50R250CP
CoolMOS Power TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB50R250CPATMA1
Power Field-Effect Transistor, 13A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB50R299CP
CoolMOSTM Power TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB50R299CPATMA1
Power Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB530N15N3G
OptiMOS3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB530N15N3GATMA1
Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB600N25N3 G
英飞凌 250V OptiMOS™ 产品采用性能先进标杆技术,完全适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB600N25N3G
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB600N25N3GATMA1
Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB600N25N3G_10
OptiMOS3 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB60R040C7
600V CoolMOS™ C7 超级结(SJ)MOSFET 系列比 CoolMOS™ CP 系列可减少大约 50% 的关断损耗(E oss),在 PFC、TTF 及其他硬开关拓扑结构中可提供卓越的性能。另外,IPL60R185C7也是高功率密度充电器的不二之选!Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB60R040CFD7
Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB60R045P7
600V CoolMOS™ P7 超结 (SJ) MOSFET 是600V CoolMOS™ P6 系列的后续产品。该产品继续在设计过程中的高效率与易用性之间保持平衡。第 7 代 CoolMOS™ 平台具有同类中较为出色的R onxA 和固有低栅极电荷 (Q G),确保高效率。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB60R060C7
600V CoolMOS™ C7 超级结(SJ)MOSFET 系列比 CoolMOS™ CP 系列可减少大约 50% 的关断损耗(E oss),在 PFC、TTF 及其他硬开关拓扑结构中可提供卓越的性能。另外,IPL60R185C7也是高功率密度充电器的不二之选!Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB60R060P7ATMA1
Power Field-Effect Transistor, 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB60R070CFD7
Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R070CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB60R080P7
600V CoolMOS™ P7 超结 (SJ) MOSFET 是 600V CoolMOS™ P6 系列的后续产品。该产品继续在设计过程中的高效率与易用性之间保持平衡。第 7 代 CoolMOS™ 平台具有同类中较为出色的R onxA 和固有低栅极电荷 (Q G),确保高效率。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB60R080P7ATMA1
Power Field-Effect Transistor, 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB60R090CFD7
Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IPB60R099C6
Metal Oxide Semiconductor Field Effect TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
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